JPWO2016010095A1 - ｎ型拡散層を有する半導体基板の製造方法及び太陽電池素子の製造方法 - Google Patents

ｎ型拡散層を有する半導体基板の製造方法及び太陽電池素子の製造方法 Download PDF

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Publication number
JPWO2016010095A1
JPWO2016010095A1 JP2016534479A JP2016534479A JPWO2016010095A1 JP WO2016010095 A1 JPWO2016010095 A1 JP WO2016010095A1 JP 2016534479 A JP2016534479 A JP 2016534479A JP 2016534479 A JP2016534479 A JP 2016534479A JP WO2016010095 A1 JPWO2016010095 A1 JP WO2016010095A1
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Japan
Prior art keywords
semiconductor substrate
diffusion layer
type diffusion
manufacturing
type
Prior art date
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Pending
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JP2016534479A
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English (en)
Japanese (ja)
Inventor
岩室　光則
光則 岩室
野尻　剛
剛 野尻
倉田　靖
靖 倉田
芦沢　寅之助
寅之助 芦沢
明博 織田
明博 織田
麻理 清水
麻理 清水
鉄也 佐藤
鉄也 佐藤
佐藤　英一
英一 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
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Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of JPWO2016010095A1 publication Critical patent/JPWO2016010095A1/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
JP2016534479A 2014-07-15 2015-07-15 ｎ型拡散層を有する半導体基板の製造方法及び太陽電池素子の製造方法 Pending JPWO2016010095A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014145375 2014-07-15
JP2014145375 2014-07-15
PCT/JP2015/070322 WO2016010095A1 (ja) 2014-07-15 2015-07-15 ｎ型拡散層を有する半導体基板の製造方法及び太陽電池素子の製造方法

Publications (1)

Publication Number Publication Date
JPWO2016010095A1 true JPWO2016010095A1 (ja) 2017-04-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016534479A Pending JPWO2016010095A1 (ja) 2014-07-15 2015-07-15 ｎ型拡散層を有する半導体基板の製造方法及び太陽電池素子の製造方法

Country Status (4)

Country Link
JP (1) JPWO2016010095A1 (zh)
CN (1) CN106537559A (zh)
TW (1) TW201603121A (zh)
WO (1) WO2016010095A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013005738A1 (ja) * 2011-07-05 2013-01-10 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法
JP2013026344A (ja) * 2011-07-19 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層の製造方法、太陽電池素子の製造方法、および太陽電池素子
JP2013026467A (ja) * 2011-07-21 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2013026579A (ja) * 2011-07-25 2013-02-04 Hitachi Chem Co Ltd ｐ型拡散層の製造方法及び太陽電池素子の製造方法
JP2014086587A (ja) * 2012-10-24 2014-05-12 Sharp Corp 太陽電池セルの製造方法および太陽電池セル

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013005738A1 (ja) * 2011-07-05 2013-01-10 日立化成工業株式会社 ｎ型拡散層形成組成物、ｎ型拡散層の製造方法及び太陽電池素子の製造方法
JP2013026344A (ja) * 2011-07-19 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層の製造方法、太陽電池素子の製造方法、および太陽電池素子
JP2013026467A (ja) * 2011-07-21 2013-02-04 Hitachi Chem Co Ltd ｎ型拡散層の製造方法、及び太陽電池素子の製造方法
JP2013026579A (ja) * 2011-07-25 2013-02-04 Hitachi Chem Co Ltd ｐ型拡散層の製造方法及び太陽電池素子の製造方法
JP2014086587A (ja) * 2012-10-24 2014-05-12 Sharp Corp 太陽電池セルの製造方法および太陽電池セル

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Publication number Publication date
CN106537559A (zh) 2017-03-22
WO2016010095A1 (ja) 2016-01-21
TW201603121A (zh) 2016-01-16

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