JPWO2015093170A1 - 発光装置用基板、発光装置、及び、発光装置用基板の製造方法 - Google Patents
発光装置用基板、発光装置、及び、発光装置用基板の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
Description
例えば、セラミックス基板は、板状のセラミックス基体に電極パターンを形成して作製される。発光装置の高出力化傾向に伴って、発光素子を基板上に多数並べて、明るさを向上させることが追及された結果、年々、セラミックス基板は大型化の一途をたどってきた。
また例えば、セラミックス基板での上記課題を克服する目的で、高出力発光装置に使用する基板として、熱伝導性の高い金属基体を使用する場合がある。ここで、金属基体上に発光素子を搭載するためには、発光素子と接続する電極パターンを形成するためにも金属基体上に絶縁層を設けなくてはならない。
実施形態1について、図1及び図2に基づいて説明すれば、以下のとおりである。
図1の(a)は、本発明の実施形態1の基板(発光装置用基板)5の平面図、(b)は、その断面図、(c)は、その断面の拡大図である。基板5は、その上に発光素子6(図5)を配置させた発光装置4(図5)に用いられるものである。発光装置4の一例を図5に示す。どの図面もそうであるが、寸法、形状、個数等は、必ずしも、実際の基板、発光素子、発光装置とは同一ではない。基板5を用いた発光装置4については実施の形態3にて説明する。
図2(a)〜(d)は、本発明の実施形態1の基板5の製造工程を説明する模式図である。次に、実施形態1に係る基板5の製造方法を、図2を参照して説明する。
本発明の他の実施形態について、図3〜図4に基づいて説明すれば、以下のとおりである。なお、説明の便宜上、前記実施形態にて説明した部材と同じ機能を有する部材については、同じ符号を付記し、その説明を省略する。
基板(発光装置用基板)5は、アルミニウム基体(基体)10を備えている。アルミニウム基体10の表面及び端面を覆うように反射層(第1絶縁層)17が形成されている。そして、アルミニウム基体10の裏面及びアルミニウム基体10の端面に形成された反射層17を覆うように保護層39が形成されている。反射層17には電極パターン20が形成されている。
図4(a)〜(d)は、本発明の実施形態2の基板の製造工程を説明する模式図である。実施形態2に係る基板5の製造方法を、図4を参照して説明する。
本実施形態では、実施形態1および実施形態2のいずれかにて説明した基板5を用いて作成した発光装置4を説明する。図5の(a)および(b)は、本実施の形態の発光装置4の平面図および正面断面図を示している。なお、図面では、簡略化のために便宜上発光素子6の数を大幅に省略して描いている。
本発明の態様1に係る発光装置用基板は、金属材料からなる基体(アルミニウム基体10)と、発光素子6との電気的接続をとるための電極パターン20と前記基体(アルミニウム基体10)との間にセラミックスを含有して形成されて前記発光素子6からの光を反射する第1絶縁層(反射層17)と、前記第1絶縁層(反射層17)の絶縁耐圧性能を補強するために形成された樹脂を含有して、且つ、熱伝導性の高い第2絶縁層(中間層16、保護層39)とを備えている。
2 ヒートシンク
4 発光装置
5 基板(発光装置用基板)
6 発光素子
7 封止樹脂
8 枠体
10 アルミニウム基体(基体)
16 中間層(第2絶縁層)
17 反射層(第1絶縁層)
19 保護層(アルマイト層)
20 電極パターン
21a 正極コネクタ(コネクタ)
21b 負極コネクタ(コネクタ)
39 保護層(第2絶縁層)
Claims (5)
- 金属材料からなる基体と、
発光素子との電気的接続をとるための電極パターンと前記基体との間にセラミックスを含有して形成されて前記発光素子からの光を反射する第1絶縁層と、
前記第1絶縁層の絶縁耐圧性能を補強するために形成された樹脂を含有して、且つ、熱伝導性の高い第2絶縁層とを備えたことを特徴とする発光装置用基板。 - 前記第2絶縁層は、前記第1絶縁層と前記基体との間に形成されている請求項1に記載の発光装置用基板。
- 前記第2絶縁層は、前記基体の前記第1絶縁層側の面と反対側の面に形成されている請求項1に記載の発光装置用基板。
- 請求項1に記載の発光装置用基板と、
前記発光素子と、
前記発光素子を、前記電極パターンを介して外部配線又は外部装置に接続するためのランド又はコネクタと、
前記発光素子を囲むように形成された枠体と、
前記枠体により囲まれた発光素子を封止する封止樹脂とを備えたことを特徴とする発光装置。 - 請求項2に記載の発光装置用基板の製造方法であって、
前記基体の上に前記第2絶縁層を形成し、
前記第2絶縁層の上に前記第1絶縁層を形成し、
前記第1絶縁層の上に前記電極パターンを形成することを特徴とする発光装置用基板の製造方法。
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JP2013261698 | 2013-12-18 | ||
JP2013261698 | 2013-12-18 | ||
PCT/JP2014/079353 WO2015093170A1 (ja) | 2013-12-18 | 2014-11-05 | 発光装置用基板、発光装置、及び、発光装置用基板の製造方法 |
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JPWO2015093170A1 true JPWO2015093170A1 (ja) | 2017-03-16 |
JP6235045B2 JP6235045B2 (ja) | 2017-11-22 |
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US (1) | US20170033266A1 (ja) |
JP (1) | JP6235045B2 (ja) |
CN (1) | CN105814703B (ja) |
WO (1) | WO2015093170A1 (ja) |
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JP2012243846A (ja) * | 2011-05-17 | 2012-12-10 | Sumitomo Chemical Co Ltd | 金属ベース回路基板および発光素子 |
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CN105830241B (zh) * | 2013-12-27 | 2019-10-18 | 夏普株式会社 | 发光装置用基板、发光装置及发光装置用基板的制造方法 |
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2014
- 2014-11-05 JP JP2015553420A patent/JP6235045B2/ja not_active Expired - Fee Related
- 2014-11-05 CN CN201480067588.0A patent/CN105814703B/zh not_active Expired - Fee Related
- 2014-11-05 US US15/102,300 patent/US20170033266A1/en not_active Abandoned
- 2014-11-05 WO PCT/JP2014/079353 patent/WO2015093170A1/ja active Application Filing
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JP2012191047A (ja) * | 2011-03-11 | 2012-10-04 | Panasonic Corp | 照明器具用の熱伝導基材及びその製造方法 |
JP2012243846A (ja) * | 2011-05-17 | 2012-12-10 | Sumitomo Chemical Co Ltd | 金属ベース回路基板および発光素子 |
JP2013153068A (ja) * | 2012-01-25 | 2013-08-08 | Shinko Electric Ind Co Ltd | 配線基板、発光装置及び配線基板の製造方法 |
WO2013183693A1 (ja) * | 2012-06-07 | 2013-12-12 | 株式会社Steq | Led照明モジュールおよびled照明装置 |
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WO2015093170A1 (ja) | 2015-06-25 |
US20170033266A1 (en) | 2017-02-02 |
CN105814703A (zh) | 2016-07-27 |
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