JPWO2014046171A1 - テラヘルツ波検出素子とその作製方法、接合体、および観察装置 - Google Patents
テラヘルツ波検出素子とその作製方法、接合体、および観察装置 Download PDFInfo
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- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
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- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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Abstract
Description
図1は、本実施の形態に係るテラヘルツ波検出素子10の構成を示す模式断面図である。図2は、テラヘルツ波検出素子10が組み込まれた観察装置1000の構成を模式的に示す図である。なお、図1における各層の厚みの大小関係は、実際のものを反映したものではない。
次に、観察装置1000の構成と、該観察装置1000を用いた被検試料Sの観察態様について説明する。図2に示すように、被検試料Sを載置するステージとしてのテラヘルツ波検出素子10に加えて、観察装置1000は、テラヘルツ波検出素子10をテラヘルツ波照射光学系OS1と、プローブ光照射光学系OS2とを備える。
次に、上述のような構成を有する、本実施の形態に係るテラヘルツ波検出素子10の作製方法について詳述する。図3は、本実施の形態に係るテラヘルツ波検出素子10の作成の流れを概略的かつ模式的に示す図である。
上述の実施の形態においては、第1母基板1Mに酸化物層OL1を形成することで、電気光学結晶層と支持基板との間に気泡の存在しないテラヘルツ波検出素子を実現するようになっているが、酸化物層の形成により気泡を除外する態様はこれに限られるものではない。例えば、第1母基板1Mに代えて、第2母基板2Mの主面に酸化物層を形成することによって第2母基板2Mにわずかな反りを与えたうえで、第1母基板1Mと第2母基板2Mとを貼り合わせるようにしてもよい。あるいは、第1母基板1Mと第2母基板2Mの双方に酸化物層を形成するようにしてもよい。
次に、観察装置1000の構成と、該観察装置1000を用いた被検試料Sの観察態様について説明する。図2に示すように、被検試料Sを載置するステージとしてのテラヘルツ波検出素子10に加えて、観察装置1000は、テラヘルツ波照射光学系OS1と、プローブ光照射光学系OS2と、観察光学系OS3とを備える。
次に、上述のような構成を有する、本実施の形態に係るテラヘルツ波検出素子10の作製方法について詳述する。図3は、本実施の形態に係るテラヘルツ波検出素子10の作製の流れを概略的かつ模式的に示す図である。
Claims (7)
- 入射したテラヘルツ波が有する空間的強度分布を検出可能なテラヘルツ波検出素子を作製する方法であって、
テラヘルツ波の入射位置における屈折率が前記入射位置における前記テラヘルツ波の入射強度に応じて変化する電気光学結晶からなる第1の基板の一の主面に、酸化物層を形成する酸化物層形成工程と、
前記第1の基板の前記一の主面と、前記電気光学結晶を支持する第2の基板とを、熱硬化性樹脂からなる接着剤によって接合する接合工程と、
前記接合工程によって得られた接合体の前記第1の基板を研磨して1μm以上30μm以下の厚みに薄層化する研磨工程と、
前記接合体を所定の素子サイズの個片にカットすることで多数個のテラヘルツ波検出素子を得る個片化工程と、
を備え、
前記酸化物層形成工程においては、前記第1の基板に引張応力を作用させることによって前記第1の基板が前記一の主面の側に凸になるように前記酸化物層を形成する、
ことを特徴とするテラヘルツ波検出素子の作製方法。 - 請求項1に記載のテラヘルツ波検出素子の作製方法であって、
前記酸化物層形成工程においては、前記酸化物層を10nm以上1μm以下の厚みに形成する、
ことを特徴とするテラヘルツ波検出素子の作製方法。 - 請求項1または請求項2に記載のテラヘルツ波検出素子の作製方法であって、
前記研磨工程を経た前記接合体の前記電気光学結晶の表面に第1の誘電体多層膜からなる全反射層を形成する全反射層形成工程と、
前記研磨工程を経た前記接合体の前記第2の基板の表面に第2の誘電体多層膜からなる反射防止層を形成する反射防止層形成工程と、
をさらに備えることを特徴とするテラヘルツ波検出素子の作製方法。 - 入射したテラヘルツ波が有する空間的強度分布を検出可能なテラヘルツ波検出素子であって、
前記テラヘルツ波の入射位置における屈折率が前記入射位置における前記テラヘルツ波の入射強度に応じて変化する電気光学結晶からなる電気光学結晶層と、
前記電気光学結晶層を支持する支持基板と、
前記電気光学結晶層と前記支持基板とを接合する樹脂層と、
を備え、
前記電気光学結晶層に前記テラヘルツ波と重畳的に照射されたプローブ光に生じる、前記テラヘルツ波の入射によって前記電気光学結晶層に生じている屈折率の空間的分布に応じた空間的特性分布を検出することで、前記入射したテラヘルツ波の前記空間的強度分布を検出するようになっており、
前記樹脂層と前記電気光学結晶層との間に、酸化物からなり、前記電気光学結晶層に引張応力を作用させる介在層が設けられてなる、
ことを特徴とするテラヘルツ波検出素子。 - 請求項4に記載のテラヘルツ波検出素子であって、
前記電気光学結晶の表面に設けられた、第1の誘電体多層膜からなる全反射層と、
前記支持基板の表面に設けられた、第2の誘電体多層膜からなる反射防止層と、
をさらに備えることを特徴とするテラヘルツ波検出素子。 - 電気光学結晶からなる第1の基板と前記電気光学結晶を支持する第2の基板とを熱硬化性樹脂からなる樹脂層にて接合してなる接合体であって、
前記樹脂層と接する側の前記第1の基板の主面に、前記第1の基板に引張応力を作用させる酸化物層が設けられてなる、
ことを特徴とする接合体。 - 請求項4または請求項5に記載のテラヘルツ波検出素子を、前記電気光学結晶層側の表面が被検試料の被載置面となるように備えるとともに、
前記被検試料が載置された前記被載置面に向けて前記テラヘルツ波を照射するテラヘルツ波照射光学系と、
前記支持基板の側から前記電気光学結晶層に対し前記プローブ光を照射するプローブ光照射光学系と、
前記テラヘルツ波の入射によって前記屈折率の空間的分布が生じている前記電気光学結晶層から出射された、前記空間的特性分布を有する前記プローブ光の像を観察する観察光学系と、
を備えることを特徴とする観察装置。
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JP2002337274A (ja) * | 2001-03-16 | 2002-11-27 | Ngk Insulators Ltd | 接着体及びその製造方法 |
JP2003185696A (ja) * | 2001-10-11 | 2003-07-03 | Toppan Printing Co Ltd | 回路パターン検出装置、回路パターン検出方法および回路パターン検査方法 |
JP2003344457A (ja) * | 2002-05-29 | 2003-12-03 | Ando Electric Co Ltd | 電気光学プロ―ブ |
WO2005045908A1 (ja) * | 2003-11-06 | 2005-05-19 | Matsushita Electric Industrial Co., Ltd. | 基板貼り合わせ方法、その貼り合わせ基板及び直接接合基板 |
JP2007256324A (ja) * | 2006-03-20 | 2007-10-04 | Ngk Insulators Ltd | 波長変換素子 |
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US6476596B1 (en) * | 1999-12-06 | 2002-11-05 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for detection of terahertz electric fields using polarization-sensitive excitonic electroabsorption |
JP2002337274A (ja) * | 2001-03-16 | 2002-11-27 | Ngk Insulators Ltd | 接着体及びその製造方法 |
JP2003185696A (ja) * | 2001-10-11 | 2003-07-03 | Toppan Printing Co Ltd | 回路パターン検出装置、回路パターン検出方法および回路パターン検査方法 |
JP2003344457A (ja) * | 2002-05-29 | 2003-12-03 | Ando Electric Co Ltd | 電気光学プロ―ブ |
WO2005045908A1 (ja) * | 2003-11-06 | 2005-05-19 | Matsushita Electric Industrial Co., Ltd. | 基板貼り合わせ方法、その貼り合わせ基板及び直接接合基板 |
JP2007256324A (ja) * | 2006-03-20 | 2007-10-04 | Ngk Insulators Ltd | 波長変換素子 |
JP2010156674A (ja) * | 2008-12-02 | 2010-07-15 | Olympus Corp | 観察装置 |
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