JPWO2013132794A1 - Vapor deposition equipment - Google Patents

Abstract

The vapor deposition apparatus according to the present invention is used to form a thin film by vapor deposition on a transported deposition target. This vapor deposition apparatus includes a separation plate disposed inside a cylindrical body constituting a hot wall. By this separation plate, the inside of the cylindrical body is separated into a first separation space and a second separation space arranged in a direction perpendicular to the transport direction of the deposition target. The first separation space is configured to detect a vapor deposition source configured to hold the vapor deposition material radiated to the first separation space and radiation of the vapor deposition material from the vapor deposition source. Sensor. The same applies to the second separation space.

Description

  The present invention relates to a vapor deposition apparatus that forms a thin film by vapor deposition of a vapor deposition material.

  2. Description of the Related Art Conventionally, an in-line type vapor deposition apparatus used for transporting a substrate by a line and using the substrate as a deposition target to deposit and stack a thin film on the surface thereof is known. An in-line type vapor deposition apparatus can efficiently manufacture an electrical device such as an organic electroluminescence element (hereinafter also referred to as “organic EL element”) by sequentially laminating thin films by vapor deposition.

  In an in-line type vapor deposition apparatus, a vapor deposition source for holding a vapor deposition material is disposed in a chamber chamber, and a deposition target such as a substrate is transported at a constant speed. A thin film is formed on the surface of the deposition target by heating the deposition source in a reduced pressure state to vaporize the deposition material and depositing the deposition material on the surface of the deposition target. However, part of the vapor deposition material vaporized from the vapor deposition source does not travel toward the vapor deposition target and may not adhere to the surface of the vapor deposition target. When the amount of the vapor deposition material that does not adhere to the deposition target increases, the use efficiency of the material decreases and the vapor deposition rate decreases. Therefore, a space between the opposing vapor deposition source and the deposition target is surrounded by a cylindrical body, the cylindrical body is heated at a temperature at which the vapor deposition material is re-vaporized, and the vaporized deposition material is covered through the cylindrical body. 2. Description of the Related Art A vapor deposition apparatus is known in which vapor deposition is performed on the surface of a vapor deposition body. For example, Patent Document 1 discloses a vapor deposition apparatus using a cylindrical body.

  10A and 10B show conventional vapor deposition apparatuses 16 and 17, and FIG. 11 shows a vapor deposition system that sequentially deposits thin films using a plurality of vapor deposition apparatuses 16 and 17. The vapor deposition apparatuses 16 and 17 are vapor deposition sources 26 and 27 that radiate a vapor deposition material for forming a thin film, and a cylindrical body 36 that emits the vapor deposition material radiated from the vapor deposition sources 26 and 27 toward the vapor deposition target 101. , 37.

  FIG. 10A shows an apparatus with one deposition source 26, and FIG. 10B shows an apparatus with two deposition sources 27 (eg, host and dopant). In the vapor deposition system of FIG. 11, vapor deposition apparatuses 16 and 17 as shown in FIGS. 10A and 10B are appropriately combined, and a plurality of vapor deposition apparatuses 16 and 17 are arranged in the transport direction. The cylindrical bodies 36 and 37 of the vapor deposition apparatuses 16 and 17 are heated to a temperature at which the vapor deposition material is vaporized. A thin film is formed on the transported deposition target 101 by the deposition material that is vaporized by the deposition sources 26 and 27 and discharged from the openings 46 and 47 of the cylindrical bodies 36 and 37. Thereby, the vapor deposition material emitted from the cylindrical bodies 36 and 37 can adhere to the surface of the vapor-deposited body 101 without scattering and form a thin film efficiently.

  Sensors 86 and 87 are provided on the cylindrical bodies 36 and 37. The sensors 86 and 87 are used to monitor the radiation of the vapor deposition material from the individual vapor deposition sources 26 and 27, that is, the vapor deposition rate and the film thickness. In vapor deposition, the vapor deposition rates from the vapor deposition sources 26 and 27 are controlled based on monitoring using the sensors 86 and 87. Thereby, a thin film can be formed with high accuracy.

  When such a vapor deposition system is used, a laminated body constituting an organic EL element or the like can be efficiently produced. This vapor deposition system can be used as an apparatus for manufacturing an organic EL element.

  In the production of organic EL elements, when a thin film constituting an organic layer is formed by a vapor deposition apparatus to produce a laminate, the vapor deposition material radiated from the vapor deposition source when the size of the substrate, which is the vapor deposition target, increases. Is difficult to reach the edge of the substrate. If the vapor deposition material is not laminated on the edge of the substrate, a thin film with a constant thickness cannot be obtained. When co-evaporation is performed using a plurality of vapor deposition materials, the mixing ratio may not be stable. In order to solve this problem, for example, it is conceivable to increase the number of vapor deposition sources attached to the cylindrical body. However, when the number of vapor deposition sources increases, when the radiation of the vapor deposition material from each vapor deposition source is monitored, it becomes difficult to monitor the radiation at each vapor deposition source.

  For example, in order to form a light emitting layer or the like, there are cases where two kinds of vapor deposition sources of a host and a dopant are necessary. A vapor deposition apparatus having two types of vapor deposition sources 2 is, for example, an apparatus as shown in FIG. 10A. When the number of vapor deposition sources is increased to, for example, two per one type of vapor deposition material, there are two host vapor deposition sources and two dopant vapor deposition sources, and a total of four vapor deposition sources are provided on the cylindrical body. In that case, the vapor deposition materials evaporated from the four vapor deposition sources are uniformly mixed in the cylindrical body. In order to form a thin film with high accuracy, it is required that the vapor deposition material emitted from each vapor deposition source is monitored. For this purpose, the same number of sensors as the vapor deposition source (for example, a film thickness meter) are provided. Connected to the body. If four deposition sources are provided, four sensors are provided. However, since the uniformly mixed material reaches each sensor, the vapor deposition material from each vapor deposition source cannot be monitored accurately.

  Even in the case where the number of deposition sources is one, as the number of deposition sources increases, in order to form a thin film with a uniform thickness with high accuracy, it is necessary to provide sensors corresponding to the number. However, when a plurality of sensors (for example, a film thickness meter) having the same number as the vapor deposition source are connected to the cylindrical body, the vapor deposition materials from the vapor deposition sources reach each sensor in a uniform manner. The deposited material from the source will not be monitored accurately.

  If the radiation of the vapor deposition material from each vapor deposition source is not individually monitored, appropriate vapor deposition control is not performed, and the accuracy of the film thickness and the mixture concentration ratio of the thin film deposited on the deposition target is adversely affected. The quality of the product may be degraded. In particular, in an organic EL element, a light emitting characteristic is deteriorated by a film having a non-uniform thickness or mixed concentration, which may cause a quality defect.

  Patent Document 2 discloses a vapor deposition apparatus that forms a thin film with a plurality of vapor deposition sources. However, in order to form an organic layer having a gradient in material concentration by arranging the vapor deposition sources in the transport direction, it is described in Patent Document 2. The technology cannot handle large substrate sizes.

JP 2003-129224 A Japanese Patent Laid-Open No. 2003-77662

  This invention is made | formed in view of said situation, and it aims at providing the vapor deposition apparatus which can form a thin film uniformly and stably also with respect to a large sized to-be-deposited body.

The vapor deposition apparatus according to the first aspect of the present invention is used to form a thin film by vapor deposition on a transported deposition target,
A vapor deposition apparatus comprising a cylindrical body constituting a hot wall, the cylindrical body having an opening facing one surface of the vapor-deposited body along the transport direction of the vapor-deposited body,
A separation plate disposed inside the cylindrical body and constituting the hot wall is provided, and the separation plate allows the inside of the cylindrical body to be transported along the surface of the opening. Are separated into a first separation space and a second separation space,
In the first separation space, a first vapor deposition source configured to hold the vapor deposition material radiated to the first separation space, and radiation of the vapor deposition material from the first vapor deposition source. A first sensor configured to detect is provided,
The second separation space has a second vapor deposition source configured to hold the vapor deposition material radiated to the second separation space, and radiation of the vapor deposition material from the second vapor deposition source. And a second sensor configured to detect.

That is, in the vapor deposition apparatus according to the second aspect of the present invention, in the first aspect, the separation plate is configured not to separate the inside of the cylindrical body in the vicinity of the opening,
The separation plate is configured to block virtual straight lines connecting the radiation portions of the first and second vapor deposition sources and the sensor portions of the second and first sensors, respectively.

  That is, in the vapor deposition apparatus according to the third aspect of the present invention, in each of the first and second aspects, each of the first and second vapor deposition sources includes a plurality of vapor deposition sources, and the first and second Each of the sensors comprises a plurality of sensors.

That is, the vapor deposition apparatus according to the fourth aspect of the present invention is the second separation that is arranged inside the cylindrical body and constitutes the hot wall in any one of the first to third aspects. A second separation space and a third separation space, wherein the inside of the cylindrical body is arranged in a direction perpendicular to the transport direction of the deposition target body along the surface of the opening. Separated into a separation space,
In the third separation space, a third deposition source configured to hold the deposition material radiated to the third separation space, and radiation of the deposition material from the third deposition source. A third sensor configured to detect is provided,
The vapor deposition material held in the first vapor deposition source, the vapor deposition material held in the second vapor deposition source, and the vapor deposition material held in the third vapor deposition source are the same type.

  A vapor deposition apparatus according to a fifth aspect of the present invention is configured to partially shield the inside of the cylindrical body along the surface of the opening in any one of the first to fourth aspects. The shield is provided at a position closer to the opening than the first sensor and the second sensor.

  In the vapor deposition apparatus which concerns on the 6th aspect of this invention, in the 5th aspect, the said shielding body is provided with two or more along with the axial direction of the said cylindrical body.

  In the vapor deposition apparatus according to a seventh aspect of the present invention, in the sixth aspect, each of the plurality of shielding bodies includes an opening, and the opening of the shielding body adjacent in the axial direction of the cylindrical body includes the opening Does not overlap in the axial direction.

  When the vapor deposition apparatus according to the present invention is used, a thin film can be uniformly and stably formed even on a large-sized vapor deposition target.

1 is a schematic cross-sectional view showing a vapor deposition apparatus according to a first embodiment. It is a schematic plan view which shows the vapor deposition apparatus which concerns on 1st embodiment. It is general | schematic sectional drawing which shows the 1st modification of the vapor deposition apparatus which concerns on 1st embodiment. 1 is a schematic cross-sectional view showing a vapor deposition apparatus according to a first embodiment. It is general | schematic sectional drawing which shows the 2nd modification of the vapor deposition apparatus which concerns on 1st embodiment. It is a schematic sectional drawing which shows the vapor deposition apparatus which concerns on 2nd embodiment. It is a schematic plan view which shows the vapor deposition apparatus which concerns on 2nd embodiment. It is a schematic sectional drawing which shows the vapor deposition apparatus which concerns on 3rd embodiment. It is a schematic sectional drawing which shows the vapor deposition apparatus which concerns on 4th embodiment. It is a schematic sectional drawing which shows the vapor deposition apparatus which concerns on 5th embodiment. It is a general | schematic plane sectional view which shows the 1st modification of the said 5th embodiment. It is general | schematic sectional drawing which shows the 2nd modification of the said 5th embodiment. It is a perspective view which shows an example of a vapor deposition system (organic electroluminescent element manufacturing apparatus). It is a graph which shows film thickness distribution. It is a schematic sectional drawing which shows an example of the conventional vapor deposition apparatus. It is a schematic sectional drawing which shows the other example of the conventional vapor deposition apparatus. It is a perspective view which shows an example of the conventional vapor deposition system (organic electroluminescent element manufacturing apparatus).

  The vapor deposition apparatus is configured to emit a vapor deposition material for forming a thin film, to be heated to a temperature at which the vapor deposition material is vaporized, and to emit the vapor deposition material radiated from the vapor deposition source toward a deposition target. A vapor deposition apparatus for forming the thin film on the vapor-deposited body to be conveyed by the vapor deposition material discharged from the cylindrical body, wherein the cylindrical body is provided along a conveyance direction. A separation plate heated to a temperature at which the vapor deposition material is vaporized is separated into a plurality of separation spaces. The separation space includes at least one vapor deposition source and the vapor deposition from the vapor deposition source. A sensor for monitoring the radiation of the material is provided.

  The separation plate is provided so as not to separate the vicinity of the opening of the cylindrical body, and includes a radiation portion of the vapor deposition source in one separation space and a sensor portion of the sensor in the other separation space. It is preferable that the imaginary line is provided to be cut off when the connecting straight line is drawn as the imaginary line.

  The separation space may be provided with a plurality of the vapor deposition sources and a plurality of the sensors for monitoring the radiation of the vapor deposition material from the vapor deposition sources.

  The cylindrical body is internally separated into a plurality of the separation spaces by a plurality of the separation plates, and the plurality of separation spaces are provided with the vapor deposition source that radiates the same type of vapor deposition material. Also good.

  1A and 1B show a first embodiment of a vapor deposition apparatus. This vapor deposition apparatus 11 is used for forming a thin film on the vapor-deposited body 10 to be conveyed. The vapor deposition apparatus 11 includes a vapor deposition source 21 that radiates a vapor deposition material for forming a thin film, and a cylindrical body 31 that emits the vapor deposition material radiated from the vapor deposition source 21 toward the deposition target 10. The cylindrical body 31 is heated to a temperature at which the vapor deposition material is vaporized. The cylindrical body 31 surrounds the space between the vapor deposition source 21 and the vapor deposition target 10 facing each other. If the vapor deposition apparatus 11 does not have the cylindrical body 31, a thin film with a uniform thickness and mixing ratio cannot be formed. In FIG. 1A, the transport direction of the deposition object 10 is a direction from the front to the back perpendicular to the paper surface, and this direction is represented by a symbol in which x is surrounded by a circle. Moreover, in FIG. 1B, the conveyance direction of the to-be-deposited body 10 is represented by the white arrow. The vapor deposition apparatus 11 can form the thin film layer which comprises an organic electroluminescent element (organic EL element). The vapor deposition temperature in the vapor deposition apparatus 11 is comparatively low temperature (400 degrees C or less etc.), and the vapor deposition apparatus 11 is an apparatus vapor-deposited by what is called a hot wall.

  That is, the vapor deposition apparatus 11 according to the present embodiment includes a cylindrical body 31 constituting a hot wall. The hot wall is an element adopted in the hot wall vapor deposition method. The vapor deposition material adhering to the hot wall is heated and re-vaporized, thereby improving the vapor deposition efficiency. The cylindrical body 31 includes an opening 41 that faces one surface of the deposition target 10 along the transport direction of the deposition target 10. In order for the cylindrical body 31 to form a hot wall, the cylindrical body 31 is preferably provided with a heater configured to heat the cylindrical body 31.

  The vapor deposition apparatus 11 includes a separation plate 51 disposed inside the cylindrical body 31. The separating plate 51 forms a hot wall together with the cylindrical body 31. In order for the separation wall 51 to form a hot wall, the separation wall 51 is preferably provided with a heater configured to heat the separation wall 51. With this separation plate 51, the inside of the cylindrical body 31 is aligned along the surface of the opening 41 of the cylindrical body 31 in the direction perpendicular to the transport direction of the deposition target 10 and the second separation space 611 and the second separation space 611. It is separated into a separation space 612.

  The first separation space 611 includes a first vapor deposition source 211 configured to hold the vapor deposition material radiated to the first separation space 611, and a vapor deposition material from the first vapor deposition source 211. And a first sensor 811 configured to detect the radiation. The second separation space 612 includes a second vapor deposition source 212 configured to hold the vapor deposition material radiated to the second separation space 612, and the vapor deposition material from the second vapor deposition source 212. And a second sensor 812 configured to detect the radiation.

  The cylindrical body 31 is formed in a vertical cylindrical shape having a cavity with a rectangular cross section. The lower part of the cylindrical body 31 is connected to the vapor deposition source 21. In the upper part of the cylindrical body 31, an opening 41 is provided for discharging the vaporized vapor deposition material upward. If the vapor deposition material is released toward the vapor deposition target 10 by the cylindrical body 31, a thin film may be formed on the vapor deposition target 10. Further, since the cylindrical body 31 is heated at a temperature equal to or higher than the vaporization temperature of the vapor deposition material, the vapor deposition material can be discharged from the opening 41 without adhering to the inside of the cylindrical body 31. The cylindrical body 31 may be made of metal. The vapor deposition may be vacuum vapor deposition. Vacuum deposition may be performed in a chamber. In FIG. 1A, the discharge direction of the vapor deposition material is indicated by a black arrow. The opening 41 of the cylindrical body 31 has a discharge amount of vapor deposition material in order to adjust the film thickness distribution in the width direction (the direction along the surface of the opening 41 and the direction perpendicular to the conveyance direction of the vapor deposition target body 10). A shielding plate configured to control the above may be provided.

  The vapor deposition source 21 is formed with a recess that opens toward the inside of the cylindrical body 31. The vapor deposition material is held in the recess. The vapor deposition source 21 preferably includes a heater configured to heat the vapor deposition material held by the vapor deposition source 21. The heater is configured to heat the vapor deposition material by a known method such as a resistance heating method, an electron beam method, a high frequency induction method, or a laser method. When the vapor deposition material is vaporized by the vapor deposition source 21, the vapor deposition material is released from the vapor deposition source 21 toward the inside of the cylindrical body 31. This vapor deposition material passes through the inside of the cylindrical body 31 and is further discharged from the opening 4 toward the vapor deposition target 10.

  As shown in FIG. 1A, in this embodiment, the opening 41 has a short side along the transport direction of the deposition target 10 and a direction (width direction) perpendicular to the transport direction of the deposition target 10. It is formed in a rectangular shape with long sides arranged along. Thereby, a thin film having a more uniform film thickness can be formed on the surface of the vapor-deposited body 10 to be conveyed.

  The vapor deposition apparatus 11 of FIG. 1A and FIG. 1B discharge | releases two types of vapor deposition materials from the cylindrical body 31, and forms a thin film. That is, the thin film is formed as a mixed film in which two kinds of materials are mixed. The cylindrical body 31 is provided with two vapor deposition sources 21a and 21b for emitting two kinds of vapor deposition materials. That is, the cylindrical body 31 is provided with two vapor deposition sources 21a, and is also provided with two vapor deposition sources 21b that hold a different type of vapor deposition material from the vapor deposition source 21a. Therefore, a total of four deposition sources 21 are provided. A radiating portion 71 for radiating the vapor deposition material is formed at a connection portion between the vapor deposition source 21 and the cylindrical body 31. The radiation part 71 is formed by an opening. For example, the radiation unit 71 may be provided with a shielding mechanism capable of changing an open / closed state (a size of the opening). The amount of radiation of the vapor deposition material can be controlled by changing the open / close state of the shielding mechanism.

  The vapor deposition apparatus 11 includes a first vapor deposition source 211 and a second vapor deposition source 212. Each of the first and second vapor deposition sources 211 and 212 includes a plurality of vapor deposition sources 21. In this embodiment, each of the 1st and 2nd vapor deposition sources 211 and 212 includes the two vapor deposition sources 21 called the vapor deposition source 21a and the vapor deposition source 21b. The radiation part 71 of these vapor deposition sources 21 is a site | part in the vapor deposition source 21 through which the vapor deposition material discharge | released from this vapor deposition source 21 passes last. In the present embodiment, as described above, the emission part 21 is a recess opening formed in the vapor deposition source 21.

  In the present embodiment, the vapor deposition source 21 is classified into a vapor deposition source 21a and a vapor deposition source 21b that holds a different type of vapor deposition material from the vapor deposition source 21a, depending on the material to be emitted. This apparatus can be used, for example, for co-evaporation. The vapor deposition source 21a may be, for example, a dopant vapor deposition source for releasing a dopant material. The vapor deposition source 21b may be, for example, a host vapor deposition source for releasing the host material. If the number of vapor deposition sources that radiate the same type of vapor deposition material is increased to a plurality, the amount of vapor deposition material released can be increased, so that a thin film can be formed efficiently even when the deposition target is enlarged. If one deposition source is provided for each type of material and an attempt is made to radiate a large amount of deposition material by increasing the output of the deposition source, the deposition material may be burdened and the deposition material may deteriorate. However, in the present embodiment, a plurality of vapor deposition sources 21 are provided, and since the output of each vapor deposition source 21 may be a normal output, deterioration of the vapor deposition material can be suppressed. The vapor deposition apparatus 11 shown in FIGS. 1A and 1B can form a mixed layer in which two kinds of materials are mixed. For example, the vapor deposition apparatus 11 can stack and form a light emitting layer of an organic EL element.

  In the present embodiment, the vapor deposition material held in the first vapor deposition source 211 and the vapor deposition material held in the second vapor deposition source 212 are the same type. That is, the vapor deposition source 21a included in the first vapor deposition source 211 and the vapor deposition source 21a included in the second vapor deposition source 212 are configured to hold the same type of vapor deposition material (dopant material). The vapor deposition source 21b included in the first vapor deposition source 211 and the vapor deposition source 21b included in the second vapor deposition source 212 are also configured to hold the same type of vapor deposition material (host material).

  In the present embodiment, the inside of the cylindrical body 31 is separated into a plurality of separation spaces 611 and 612 by a separation plate 51 provided along the conveyance direction of the deposition target 10. The separation plate 51 is disposed in the cylindrical body 31 in parallel with the transport direction at the center of the cylindrical body 31 in the width direction (direction perpendicular to the transport direction). In the present embodiment, two separation spaces 611 and 612 having substantially the same volume are provided by providing the separation plate 51 that bisects the cylindrical body 31 approximately equally. The separation plate 51 is heated to a temperature at which the vapor deposition material is vaporized. Since the separation plate 51 is heated at a temperature equal to or higher than the vaporization temperature of the vapor deposition material, the vapor deposition material can be discharged from the opening 41 without adhering to the separation plate 51. The temperature of the separation plate 51 may be the same as that of the cylindrical body 31 or may be different. If the cylindrical body 31 and the separation plate 51 are connected with heat transfer and the separation plate 51 is also heated by heating the cylindrical body 31, the heating mechanism is simplified. The separation plate 51 may be made of metal. For example, the separation plate 51 may be formed of a steel plate.

  In the present embodiment, the separation spaces 611 and 612 are cylindrical spaces. That is, the separation spaces 611 and 612 are spaces surrounded by the cylindrical body 31 and the separation plate 51. Thereby, the vapor deposition material radiated from the vapor deposition source 21 moves upward and is emitted from the opening 41. The separation plate 51 divides the space so that the lower space of the cylindrical body 31 (the space opposite to the opening 41) does not communicate with each other to form separation spaces 611 and 612. If the space communicates with a hole or the like, the vapor deposition material radiated in the other separation spaces 611 and 612 may be mixed.

  In the vapor deposition apparatus 11, each of the separation spaces 611 and 612 is provided with at least one vapor deposition source 21 and a sensor 81 for monitoring the radiation of the vapor deposition material from the vapor deposition source 21. In the present embodiment, each separation space 611 and 612 is provided with a plurality (two) of vapor deposition sources 21 and a plurality (two) of sensors 81 that monitor the radiation of the vapor deposition material from the vapor deposition sources 21. ing. Thereby, the vapor deposition apparatus 11 can radiate | emit different vapor deposition material, and can form the mixed layer which material mixed accurately. The number of vapor deposition sources 21 may be three or more. The number of sensors 81 may also be three or more. However, the number of sensors 81 is preferably the same as or more than the number of vapor deposition sources 21. Moreover, it is preferable that the number of the vapor deposition sources 21 provided in each separation space 611,612 is the same. That is, it is preferable that the number of vapor deposition sources 21 provided in the first separation space 611 and the number of vapor deposition sources 21 provided in the second separation space 612 are the same. Thereby, the set of the vapor deposition source 21 can be arrange | positioned in each separation space 611,612, and the vapor deposition material of the same kind can be discharge | released from each separation space 61. FIG.

  That is, in the present embodiment, the first vapor deposition source 211 and the first sensor 811 are provided in the first separation space 611. The first vapor deposition source 211 is configured to hold the vapor deposition material radiated to the first separation space 611. The first sensor 811 is configured to detect the radiation of the vapor deposition material from the first vapor deposition source 211. The first vapor deposition source 211 includes a plurality of vapor deposition sources 21, and the first sensor 811 includes a plurality of sensors 81.

  The first vapor deposition source 211 may be arranged at any position as long as the vapor deposition material held in the first vapor deposition source 211 can be radiated to the first separation space 611. For example, the first vapor deposition source 211 may be disposed in the first separation space 611 or may be disposed outside the first separation space 611. The first sensor 811 may be disposed at any position as long as the first sensor 811 can detect the radiation of the vapor deposition material from the first vapor deposition source 211. For example, the first sensor 811 may be disposed in the first separation space 611, may be disposed outside the first separation space 611, and is disposed in the first vapor deposition source 211. Also good.

  Furthermore, in the present embodiment, the second vapor deposition source 212 and the second sensor 812 are provided in the second separation space 612. The second vapor deposition source 212 is configured to hold a vapor deposition material that is radiated to the second separation space 612. The second sensor 812 is configured to detect the radiation of the vapor deposition material from the second vapor deposition source 212. The second evaporation source 212 includes a plurality of evaporation sources 21, and the second sensor 812 includes a plurality of sensors 81.

  The second vapor deposition source 212 may be disposed at any position as long as the vapor deposition material held by the second vapor deposition source 212 can be radiated to the second separation space 612. For example, the second vapor deposition source 212 may be disposed in the second separation space 612 or may be disposed outside the second separation space 612. The second sensor 812 may be disposed at any position as long as the second sensor 812 can detect the radiation of the deposition material from the second deposition source 212. For example, the second sensor 812 may be disposed in the second separation space 612, may be disposed outside the second separation space 612, and is disposed in the second vapor deposition source 212. Also good.

  The sensor 81 is used to monitor the radiation of the vapor deposition material from each vapor deposition source 21, that is, the vapor deposition rate and the film thickness. In vapor deposition, based on monitoring using the sensor 81, the vapor deposition rate of the vapor deposition material radiated from each vapor deposition source 21 (the amount of radiation of the vapor deposition material per unit time) is controlled. Thereby, the vapor deposition apparatus can form a thin film accurately. A sensor portion 91 is provided at the tip of the sensor 81. When the vapor deposition material reaches the sensor unit 91, the radiation of the vapor deposition material can be monitored. As the sensor 81, a film thickness meter or the like can be used, and for example, a crystal resonator or the like can be used.

  The sensor unit 91 is a part of the sensor 81 where the vapor deposition material detected by the sensor 81 reaches first. In the present embodiment, the sensor 81 includes a cylindrical member that communicates with the separation space, and a detection element disposed in the member. As the detection element, for example, a quartz oscillator film thickness meter including a quartz oscillator can be cited. An opening communicating with the separation space in the tubular member is the sensor unit 91 in the present embodiment. In this case, the vapor deposition material is drawn into the cylindrical member from the sensor unit 91, and the vapor deposition material is detected by the detection element. The detection element detects the deposition film thickness from a change in the vibration frequency of the crystal unit accompanying the deposition material, for example, measures the deposition rate, and generates a control signal including information on the deposition rate. The detection element transmits, for example, control information to the controller. The controller is configured to control the evaporation source 21 and adjust the deposition rate in accordance with, for example, a control signal. The operation of the controller will be described in detail later.

  In 1st embodiment, the vapor deposition source 21a, the vapor deposition source 21b, the sensor 81a, and the sensor 81b are provided in each separation space 611,612. The sensor 81a and the sensor 81b are used for monitoring the radiation of the vapor deposition material from the vapor deposition source 21a and the vapor deposition source 21b. That is, in each separation space 611, 612, one or two or more vapor deposition sources 21 that radiate the same kind of vapor deposition material are provided, and the number of sensors 81 corresponding to the number of the vapor deposition sources 21 is provided. .

  As shown in FIG. 1B, in the present embodiment, the respective vapor deposition sources 21 are arranged in a direction perpendicular to the transport direction. Thereby, the vapor deposition apparatus 11 can stably form a uniform thin film in the width direction of the vapor deposition target 10. A plurality of different types of evaporation sources 21 are alternately arranged in the order of the evaporation source 21a, the evaporation source 21b, the evaporation source 21a, and the evaporation source 21b. Thereby, a more stable thin film can be formed.

  In the vapor deposition apparatus 11 of the present embodiment, the separation plate 51 is provided and the inside of the cylindrical body 31 is partitioned into a plurality of separation spaces 6, so that the width direction (the direction perpendicular to the conveyance direction along the surface of the opening 41). ) Can be easily adjusted by adjusting the radiation of the vapor deposition material and adjusting the distribution of the vapor deposition amount. That is, when a vapor deposition apparatus is used in which the separation plate is not provided and the inside of the cylindrical body is all in communication, if a plurality of vapor deposition sources that radiate the same type of vapor deposition material are provided in the cylindrical body, the inside of the cylindrical body Then the materials will mix. Then, even if monitoring is performed using a sensor, it is impossible to determine which evaporation source the evaporation material is radiated from, and it becomes impossible to appropriately control the radiation amount of the evaporation source. However, in the present embodiment, the separation plate 51 is provided and the space inside the cylindrical body 31 is partitioned, and the vapor deposition source 21 and the sensor 81 are provided in the respective separation spaces 611 and 612. The radiation of the material from the deposition source 21 can be monitored. Therefore, the vapor deposition apparatus 11 can form a thin film with high accuracy.

  The separation plate 51 may be detachably inserted into the cylindrical body 31. The separation plate 51 may be configured so that the height can be adjusted. For example, if the separation plate 51 is slidably inserted from the lower part of the cylindrical body 31, the height is easily adjusted by sliding the separation plate 51 up and down. In that case, it is possible to further optimize the conditions for forming the thin film by changing the shielding state by the separation plate 51. The separation plate 51 may be detachably inserted from the side portion (front or rear) of the cylindrical body 31. In this case, the height of the separation plate 51 that separates the separation spaces 611 and 612 can be changed by replacing the separation plates 51 having different heights (lengths in the vertical direction). In that case, it is possible to further optimize the conditions for forming the thin film by changing the shielding state by the separation plate 51.

  2A to 2C show an example of the vapor deposition apparatus 11 including the separation plates 5 having different heights (lengths in the vertical direction). FIG. 2B shows the first embodiment, and each of FIGS. 2A and 2C shows a modification of the first embodiment. In the example of FIG. 2A, the height of the separation plate 51 is substantially the same as the height of the internal space of the cylindrical body 31. Therefore, in FIG. 2A, the separation plate 51 separates the opening 41. In the example of FIGS. 2B and 2C, the height of the separation plate 51 is lower than the height of the internal space of the cylindrical body 31. Therefore, in FIG. 2B and FIG. 2C, the separation plate 51 does not separate the opening 41.

  In the vapor deposition apparatus 11, it is preferable that the separation plate 51 is provided so as not to separate the vicinity of the opening 41 of the cylindrical body 31 as in the example of FIG. 2B or 2C. In this case, the upper end 51 a of the separation plate 51 is disposed below the opening 41. When the opening 41 of the cylindrical body 31 is separated by the separation plate 51 as in the example of FIG. 2A, when the vapor deposition material is discharged from the tubular body 31, the vapor deposition is performed for each region partitioned by the separation plate 51. Material is released. Then, the vapor deposition material released above the separation plate 51 is reduced, and it may be difficult to obtain a thin film having a uniform thickness. However, as shown in FIGS. 2B and 2C, if the opening 41 is not separated by the separation plate 51, the vapor deposition materials that have reached the vicinity of the opening 41 are mixed with each other at this portion and discharged from the cylindrical body 31. become. Therefore, the film thickness distribution in the vicinity immediately above the separation plate 51 becomes gentle, and the vapor deposition apparatus 11 can form a thin film with a uniform film thickness.

  That is, it is preferable that the separation plate 51 is configured not to separate the inside of the cylindrical body 31 in the vicinity of the opening 41, as shown in FIGS. 1A, 2B, and 2C. In other words, the separation plate 51 is preferably set back inside the cylindrical body 31 rather than the opening 41 of the cylindrical body 31.

  Further, as shown in FIGS. 2B and 2C, the separation plate 51 represents a straight line connecting the radiation portion 71 of the vapor deposition source 21 in one separation space and the sensor portion 91 of the sensor 81 in another separation space. It is preferable that the virtual line L1 is provided so as to be cut off when drawn as L1. When a plurality of vapor deposition sources 21 and a plurality of sensors 81 are provided, it is preferable that all virtual lines L1 are blocked. The virtual line L1 may be drawn with reference to the center of the radiating unit 71 and the sensor unit 91. However, in order to increase the degree of shielding, the length of the line is increased from the edge of both to the edge. It is preferable to draw the virtual line L1. Since the height of the separation plate 51 is higher than the position through which the virtual line L1 passes, the virtual line L1 is blocked by the separation plate 51. By blocking the imaginary line L1, it becomes difficult for the vapor deposition material radiated in another separation space to reach the sensor portion 91 of the sensor 81, so that the accuracy of monitoring the vapor deposition material can be improved.

  That is, as shown in FIGS. 2B and 2C, the separation plate 51 includes a radiation portion 71 of the vapor deposition source 21 included in the first vapor deposition source 211 and a sensor portion 91 of the sensor 81 included in the second sensor 812. A virtual straight line (virtual line L1) to be connected is cut off, and the radiation unit 71 of the vapor deposition source 21 included in the second vapor deposition source 212 and the sensor unit 91 of the sensor 81 included in the first sensor 811 are connected. It is preferable that the imaginary straight line (virtual line L1) is also cut off. In other words, it is preferable that these virtual lines L <b> 1 intersect with the separation plate 51. In this case, the radiation of the vapor deposition material from each vapor deposition source 21 is detected by the sensor 81 with higher accuracy. In the case where the first vapor deposition source 211 is composed of a plurality of vapor deposition sources 21 and the second sensor 812 is composed of a plurality of sensors 81, the separation plate can be used regardless of the combination of the vapor deposition source 21 and the sensor 81. It is preferable that 51 cuts off the virtual straight line (virtual line L1) which connects the radiation | emission part 71 of the vapor deposition source 21, and the sensor part 91 of the sensor 81. FIG. Even when the second vapor deposition source 212 is composed of a plurality of vapor deposition sources 21 and the first sensor 811 is composed of a plurality of sensors 81, no matter what combination of the vapor deposition source 21 and the sensor 81 is selected, the separation plate It is preferable that 51 cuts off the virtual straight line (virtual line L1) which connects the radiation | emission part 71 of the vapor deposition source 21, and the sensor part 91 of the sensor 81. FIG.

  Furthermore, the height of the separation plate 51 is preferably higher than the height position H1 of the sensor portion 91 of the sensor 81 as shown in FIG. 2B. When a plurality of sensors 81 are provided, it is preferable that the height of the separation plate 51 is higher than that of all the sensor portions 91. Although the vapor deposition material is radiated upward, it may hit the wall surface of the cylindrical body 31 or the separation plate 51 and change its traveling direction. In addition, the traveling direction of the vapor deposition material traveling upward may be changed and bent toward another separation space due to collision with another vapor deposition material or change in atmospheric pressure. At this time, as shown in FIG. 2C, when the height of the separation plate 51 is arranged at a position lower than the sensor unit 91, the vapor deposition material released in the separation space enters another separation space, and the different separation spaces. There is a possibility that the vapor deposition material may be measured by the sensor 81. However, as in the example of FIG. 2B, when the upper end portion 51 a of the separation plate 51 is positioned above the position of the sensor portion 91, the vapor deposition material radiated in another separation space is detected by the sensor 81. Therefore, the radiation of the vapor deposition material can be monitored with high accuracy.

  That is, it is preferable that the dimension from the opening 41 of the cylindrical body 31 to the end portion 51 a of the separation plate 51 is shorter than the dimension from the opening 41 of the cylindrical body 31 to the sensor portion 91 of the sensor 81. In this case, the radiation of the vapor deposition material from each vapor deposition source 21 is detected by the sensor 81 with higher accuracy. In particular, the dimension from the opening 41 of the cylindrical body 31 to the end 51a of the separation plate 51 is larger than the dimension from the opening 41 of the cylindrical body 31 to the sensor part 91 of any sensor 81 of all the sensors 81. Short is preferred. These dimensions are the dimensions of the cylindrical body 31 in the axial direction.

  As described above, when the space inside the cylindrical body 31 is separated into the plurality of separation spaces 611 and 612 by the separation plate 51, if the separation plate 51 partitions the opening 41, vapor deposition is performed at the position of the separation plate 51. There is a possibility that the amount of released material is reduced and the thickness of the film is reduced. That is, when the film thickness distribution of the thin film is graphed, a dent may be formed in the graph. Therefore, in order to form a thin film having a more uniform thickness, it is preferable that the height of the separation plate 51 is lowered to a height at which the film thickness distribution cannot be recessed. On the other hand, in order to increase the monitoring accuracy using the sensor 81, it is preferable that the height of the separation plate 51 is high. Therefore, specifically, for example, the height of the separation plate 51 (the position of the upper end portion 51a) is 1/5 to 4 between the position of the sensor portion 91 of the sensor 81 and the position of the opening 41 in the vertical direction. Although it may be in the range of / 5, it is not limited to this.

  That is, the dimension from the opening 41 of the cylindrical body 31 to the end part 5a of the separation plate 51 is in the range of 1/5 to 4/5 of the dimension from the opening 41 of the cylindrical body 31 to the sensor part 91 of the sensor 81. It is preferable that These dimensions are the axial dimensions of the cylindrical body. In this case, the thickness of the thin film formed on the deposition target 10 is made more uniform, and the radiation of the vapor deposition material from the vapor deposition source 21 is detected with higher accuracy by the sensor 81.

  As described above, if the height of the separation plate 51 is too high, it is difficult to obtain a uniform film thickness. If the height is too low, the monitoring by the sensor 81 is adversely affected. Note that the thickness of the separation plate 51 is not particularly limited. However, if the thickness is too thick, the vapor deposition material may not be easily released above the separation plate 51, and is, for example, 1 to 30 mm.

  The monitoring of the radiation of the vapor deposition material by the sensor 81 may be monitoring of the vapor deposition rate and the film thickness. When the deposition rate and film thickness are monitored, the mixing ratio of the deposition materials and the thickness of the thin film can be appropriately monitored. A sensor unit 91 is provided at the tip of the sensor 81. When the sensor 81 is a film thickness meter, the radiation of the deposition material can be monitored by monitoring the thickness of the film formed on the sensor unit 91. The sensor part 91 of the sensor 81 is preferably provided downward. When the sensor 81 is attached to the wall surface of the cylindrical body 31, the sensor 81 is attached so that the sensor portion 91 faces obliquely downward. Thereby, monitoring performance increases.

  In the first embodiment, the sensor 81a is arranged on the side portion (side wall) of the cylindrical body 31, and the sensor 81b is arranged on the front portion (upstream wall) of the cylindrical body 31. If the distance between the sensor 81a and the sensor 81b is short, the radiation of the vapor deposition material may not be properly monitored. However, by providing the sensor 81 on another wall surface of the cylindrical body 31, the distance between the sensor portions 91 can be increased, and the radiation of the vapor deposition material can be accurately monitored.

  It is preferable that the vapor deposition apparatus 11 controls the vapor deposition rate of the vapor deposition material radiated | emitted from the vapor deposition source 21 based on the vapor deposition rate and film thickness which were monitored using the sensor 81. FIG. Thereby, it becomes easier for the vapor deposition apparatus 11 to form a thin film with a uniform film thickness. Furthermore, the vapor deposition apparatus 11 can form a thin film with a stable mixing ratio. For example, the vapor deposition apparatus 11 is provided with a vapor deposition amount control mechanism (controller). That is, the vapor deposition apparatus 11 is provided with a controller configured to control the vapor deposition amount. The controller is configured by an appropriate electronic arithmetic device. The controller is configured to control the radiation amount of the vapor deposition material from the vapor deposition source 21 based on, for example, a deviation between the vapor deposition rate monitored using the sensor 81 and the set vapor deposition rate. For example, if there is a deviation between the monitored vapor deposition rate and the set value, the controller controls the amount of power supplied to the heating mechanism (heater) of the vapor deposition source 21 so that the inside of the heating container in the vapor deposition source 21 Adjust the temperature. Thereby, the radiation amount of the vapor deposition material from the vapor deposition source 21 is adjusted. Note that a shielding body whose shielding degree is changed by opening and closing a valve may be provided in the radiation portion 71 of the vapor deposition source 21. In this case, the controller may be configured to adjust the radiation amount of the vapor deposition material by adjusting the opening of the valve.

  In the case of this embodiment, since each of the separation spaces 611 and 612 is provided with the two vapor deposition sources 21 and the two sensors 81, the relationship between the vapor deposition material and the measurement result obtained by the sensor 81 is expressed in a mathematical formula. The vapor deposition rate of each vapor deposition material can be obtained using the simultaneous equations.

  In calculating the deposition rate, the deposition rate for each of the separation spaces 611 and 612 is noted. This is because one separation space is separated from the other separation spaces, so that the vapor deposition material radiated from the other separation spaces need not be considered.

  First, in each separation space 611, 612, the value of the ratio of the amount of vapor deposition material per unit time reaching the sensors 81a and 81b from the vapor deposition source 21a is A1. Also, the set vapor deposition rate value of the vapor deposition source 21a is C1, the vapor deposition rate value of the vapor deposition source 21b is X2, and the vapor deposition rate value Y2 monitored by the sensor 81b. Then, the following (Formula 1) is established.

(Formula 1) Y2 = A1 × C1 + X2
From this (Equation 1), the controller can calculate the vapor deposition rate X2 of the vapor deposition source 21b.

  Similarly, let A2 be the value of the arrival amount ratio per unit time of the vapor deposition material that reaches the sensor 81a and the sensor 81b from the vapor deposition source 21b. Further, the vapor deposition source 21b has a set vapor deposition rate value C2, the vapor deposition rate value of the first vapor deposition source 21a is X1, and the vapor deposition rate value monitored by the sensor 81a is Y1. Then, the following (Formula 2) is established.

(Formula 2) Y1 = A2 × C2 + X1
From this (Equation 2), the controller can calculate the vapor deposition rate X1 of the vapor deposition source 21a.

  The controller performs the above calculation for all of the plurality of separation spaces 611 and 612. Subsequently, the controller adjusts the radiation amount of the vapor deposition material so that the vapor deposition rate (X1, X2 in the above example) at each vapor deposition source 21 becomes the set vapor deposition rate (C1, C2 in the above example). To do. Thereby, the vapor deposition apparatus can form a thin film by vapor deposition at a set vapor deposition rate, and a thin film having a constant material mixing ratio and a stable film thickness can be formed.

  In the first embodiment, two vapor deposition sources 21 are provided in each separation space 611, 612. However, three or more vapor deposition sources 21 may be provided in each separation space 611, 612. In that case, the vapor deposition apparatus 11 can co-deposit two or more types of dopants, and can mix with a host material. When three or more vapor deposition sources 21 are provided in each separation space 611, 612, it is preferable that at least the same number of sensors 81 as the number of vapor deposition sources 21 be provided in each separation space 611, 612. By combining the numbers of the vapor deposition sources 21 and the sensors 81, the vapor deposition rate can be easily calculated by simultaneous equations. However, since calculation becomes complicated when there are too many vapor deposition sources 21, the number of vapor deposition sources 21 provided in one separation space is good to be 5 or less or 4 or less.

  The vapor deposition apparatus 11 in FIGS. 1A and 1B can form a thin film that is uniformly stable in the width direction on the deposition target 10, and therefore forms a thin film on a large substrate having a long length in the width direction. Suitable for For example, when forming a large organic EL element, unevenness in light emission is likely to occur unless the film thickness is uniform. However, the vapor deposition apparatus 11 according to this embodiment has a more uniform thickness and less variation in the mixing ratio. Since a thin film can be formed, an organic EL element with suppressed light emission unevenness can be obtained. The length in the width direction of the deposition object 10 (substrate) may be, for example, 730 mm or more. When the substrate is large in this way, it is not easy to obtain a uniform and stable thin film when a conventional vapor deposition apparatus in which one vapor deposition source is arranged for each vapor deposition material is used. However, when the vapor deposition apparatus 11 of this embodiment is used, since the vapor deposition apparatus 11 is provided with a plurality of vapor deposition sources 21, a uniform and stable thin film can be easily obtained. In addition, although the length of the width direction of the to-be-deposited body 10 (board | substrate) may be 2880 mm or less which is the length of a 10th generation glass substrate, it is not limited to this.

  Thus, the vapor deposition apparatus 11 of 1st embodiment monitors the vapor deposition rate from each vapor deposition source 21 separately, when two or more types of materials are mixed with one cylindrical body 31. FIG. It is possible to control the deposition rate and the dope concentration with high accuracy. Therefore, the vapor deposition apparatus 11 can form a thin film having a small thickness variation and concentration variation on the deposition target 10. That is, in this embodiment, even when two or more kinds of vapor deposition materials are used, the vapor deposition rate of each vapor deposition material is accurately measured, and therefore, the thickness and composition of the thin film formed by vapor deposition are more accurate. Can be controlled.

  3A and 3B show a second embodiment. The present embodiment has the same configuration as that of the first embodiment except that the number of vapor deposition sources and sensors is different from that of the first embodiment. The vapor deposition apparatus 12 which concerns on this embodiment is used in order to form a thin film by vapor deposition in the to-be-deposited body 10 conveyed.

  3A and 3B includes a plurality of vapor deposition sources 21 that emit one kind of vapor deposition material.

  Similar to the first embodiment, the vapor deposition apparatus 12 according to the second embodiment includes a vapor deposition source 22 that emits a vapor deposition material for forming a thin film, and a vapor deposition material emitted from the vapor deposition source 22. And a cylindrical body 32 that discharges toward the center. The cylindrical body 32 is heated to a temperature at which the vapor deposition material is vaporized.

  That is, the vapor deposition apparatus 12 includes a cylindrical body 32 constituting a hot wall. The cylindrical body 32 includes an opening 42 facing one surface of the deposition target 10 along the transport direction of the deposition target 10. The vapor deposition apparatus 12 further includes a vapor deposition source 22 configured to hold a vapor deposition material radiated into the cylindrical body 32.

  In the vapor deposition apparatus 12 of FIG. 3A and FIG. 3B, one type of vapor deposition material is discharged | emitted from the cylindrical body 32, and a thin film is formed. That is, a thin film made of one kind of material is formed. The cylindrical body 32 is provided with two vapor deposition sources 22 for radiating the vapor deposition material. When the number of vapor deposition sources 22 that radiate the same type of material increases to a plurality, the amount of vapor deposition material released increases, so that even when the deposition target 10 is enlarged, a thin film can be formed efficiently. The vapor deposition apparatus 12 of FIG. 3A and FIG. 3B can laminate | stack the layer comprised by one vapor deposition material, for example in manufacture of an organic EL element. Examples of such layers include layers such as a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and an intermediate layer in the organic EL element.

  In the present embodiment, the inside of the cylindrical body 32 is separated into a plurality of separation spaces 621 and 622 by a separation plate 52 provided along the transport direction. In the second embodiment, two separation spaces 621 and 622 having substantially the same volume are provided by the separation plate 52 that bisects the cylindrical body 52 approximately equally. The separation plate 52 is heated to a temperature at which the vapor deposition material is vaporized.

  That is, the vapor deposition device 12 includes a separation plate 52 disposed inside the cylindrical body 32. The separation plate 52 forms a hot wall together with the cylindrical body 32. By this separation plate 52, the inside of the cylindrical body 32 is aligned along the surface of the opening 42 of the cylindrical body 32 in the direction perpendicular to the transport direction of the deposition target 10 and the second separation space 621 and the second separation space 621. It is separated into a separation space 622.

  In the vapor deposition apparatus 12 of FIGS. 3A and 3B, each separation space 621 and 622 is provided with one vapor deposition source 22 and one sensor 82 for monitoring the radiation of the vapor deposition material from the vapor deposition source 22. Yes. Thereby, even if the vapor deposition apparatus 12 is a case where the width | variety of the to-be-deposited body 10 becomes large, a thin film can be formed over the width direction. In the present embodiment, the sensors 82 provided in the separation spaces 621 and 622 monitor the radiation of the vapor deposition material of the vapor deposition source 22 provided in the same separation space. Therefore, the vapor deposition apparatus 12 can monitor the radiation of the vapor deposition material from the vapor deposition source 22 in each of the separation spaces 621 and 622, and can perform the vapor deposition with high accuracy. Moreover, since the vapor deposition source 22 provided in each separation space 621 and 622 emits the same kind of vapor deposition material, the same kind of vapor deposition material can be discharged from each separation space 621 and 622.

  That is, in the first separation space 621, the first vapor deposition source 221 configured to hold the vapor deposition material radiated to the first separation space 621, and the first vapor deposition source 221 from the first vapor deposition source 221. A first sensor 821 is provided that is configured to detect radiation of the vapor deposition material. The second separation space 622 includes a second deposition source 222 configured to hold a deposition material radiated to the second separation space 622, and a deposition material from the second deposition source 222. And a second sensor 822 configured to detect the radiation. In the present embodiment, each of the first and second vapor deposition sources 221 and 222 includes one vapor deposition source 22, and each of the first and second sensors 821 and 822 includes one sensor 82. The first vapor deposition source 221 and the second vapor deposition source 222 are configured to hold the same kind of vapor deposition material.

  As shown in FIG. 3B, the vapor deposition source 22 is arranged side by side in a direction perpendicular to the transport direction. Thereby, the vapor deposition apparatus 12 can stably form a uniform thin film in the width direction of the vapor deposition target 10.

  In the present embodiment, the separation plate 52 partitions the inside of the cylindrical body 32 into a plurality of separation spaces 621 and 622, so that the vapor deposition apparatus 12 vapor-deposits on the vapor deposition target 10 having a long width direction. Even in this case, the radiation of the vapor deposition material can be easily adjusted to adjust the distribution of the vapor deposition amount. In other words, when a vapor deposition apparatus is used in which the inside of a cylindrical body not provided with a separation plate is connected, if a plurality of vapor deposition sources of the same type are provided in the cylindrical body, the materials are mixed inside the cylindrical body. End up. Then, even if the vapor deposition apparatus is monitored by the sensor, it is impossible to determine which vapor deposition source is the vapor deposition material, and it is impossible to appropriately control the radiation amount of the vapor deposition source. However, in this embodiment, since the separation plate 52 partitions the space inside the cylindrical body 32 and the separation sources 621 and 622 are provided with the vapor deposition source 22 and the sensor 82, the vapor deposition apparatus 12 can be easily separated from each other. The emission of material from the deposition source 22 can be monitored. Therefore, the vapor deposition apparatus 12 can form a thin film with high accuracy.

  The configuration of the separation plate 52 may be the same as the configuration of the separation plate 51 in the first embodiment. That is, it is preferable that the separation plate 52 does not separate the vicinity of the opening 4 of the cylindrical body 32. The separation plate 52 draws a virtual line when a straight line connecting the radiation part 72 of the vapor deposition source 22 in one separation space and the sensor part 92 of the sensor 82 in another separation space is drawn as a virtual line. It is preferable that it is provided so as to shut off. Furthermore, the height of the separation plate 52 is preferably higher than the sensor portion 92 of the sensor 82. The separation plate 52 may be adjustable in height. As described with reference to FIGS. 2A to 2C, if the height of the separation plate 52 is too high, it is difficult to obtain a uniform film thickness, and if it is too low, the monitoring by the sensor 82 is adversely affected. It is set appropriately.

  That is, the separation plate 52 is preferably configured so as not to separate the inside of the cylindrical body 32 in the vicinity of the opening 42. In other words, the separation plate 52 is preferably set back inside the cylindrical body 32 rather than the opening 42 of the cylindrical body 32. The separation plate 52 blocks a virtual straight line (imaginary line) connecting the radiation part 72 of the first vapor deposition source 221 and the sensor part 92 of the second sensor 822, and emits the radiation of the second vapor deposition source 222. It is also preferable that a virtual straight line (virtual line) connecting the unit 72 and the sensor unit 92 of the first sensor 822 is cut off. In other words, it is preferable that these virtual lines intersect with the separation plate 52.

  The monitoring of the radiation of the vapor deposition material using the sensor 82 may be the same as in the first embodiment. As in the first embodiment, the deposition rate is preferably controlled based on monitoring by the sensor 82.

  In the second embodiment, each of the separation spaces 621 and 622 is provided with one vapor deposition source 22 and one sensor 82, and thus can be monitored in a one-to-one relationship. That is, it is not necessary to monitor the radiation of the vapor deposition material by simultaneous equations or the like, and the vapor deposition rate can be directly monitored. Therefore, the vapor deposition apparatus 12 can form a thin film with a uniform film thickness accurately and easily.

  The vapor deposition apparatus 12 which concerns on 2nd embodiment can form the thin film uniformly stabilized over the width direction in the to-be-deposited body 10. FIG. For this reason, the vapor deposition apparatus 12 is suitable for forming a thin film on a large substrate having a long length in the width direction. For example, when forming a large organic EL element, unevenness in light emission is likely to occur unless the film thickness is uniform. However, since the vapor deposition apparatus 12 can form a thin film with a more uniform thickness, an organic EL element with reduced light emission unevenness can be obtained. The length in the width direction of the deposition object 10 may be the same as in the first embodiment.

  As described above, the vapor deposition apparatus 12 according to the second embodiment performs vapor deposition from the respective vapor deposition sources 22 when one kind of material is discharged from two or more vapor deposition sources 22 into one cylindrical body 32. The rate can be individually monitored, and the deposition rate can be controlled with high accuracy. Therefore, the vapor deposition apparatus 12 can form a thin film with small variations in film thickness on the vapor deposition target 10.

  4A and 4B show third and fourth embodiments, respectively. The vapor deposition apparatus 13 according to the third embodiment shown in FIG. 4A uses a plurality of sets of vapor deposition sources 23 that emit a plurality (two types) of vapor deposition materials. The vapor deposition apparatus 14 according to the fourth embodiment shown in FIG. 4B uses a plurality of vapor deposition sources 24 that emit one kind of vapor deposition material.

  Similarly to the first embodiment, the vapor deposition apparatus 13 according to the third embodiment includes a vapor deposition source 23 that radiates a vapor deposition material for forming a thin film, and a vapor deposition material emitted from the vapor deposition source 23 to be deposited. And a cylindrical body 33 that discharges toward the center 10. The cylindrical body 33 is heated to a temperature at which the vapor deposition material is vaporized. The vapor deposition apparatus 14 according to the fourth embodiment includes a vapor deposition source 24 that radiates a vapor deposition material for forming a thin film, and a cylindrical body that emits the vapor deposition material radiated from the vapor deposition source 24 toward the deposition target 10. 34. The cylindrical body 34 is heated to a temperature at which the vapor deposition material is vaporized.

  In the vapor deposition apparatus 13 according to the third embodiment, two types of vapor deposition materials are released from the cylindrical body 33 to form a thin film. That is, the thin film is formed as a mixed film of two kinds of materials. If two vapor deposition sources 23 that radiate two kinds of vapor deposition materials are set as one set, three sets of this set are provided in the cylindrical body 33. As a result, a total of six vapor deposition sources 23 for radiating the vapor deposition material are provided. Since the number of vapor deposition sources 23 that radiate the same type of material increases to a plurality, the amount of vapor deposition material released increases, so that the vapor deposition apparatus 13 can be efficiently used even when the deposition target 10 is enlarged. A thin film can be formed. In particular, as the apparatus according to the third embodiment, when the number of sets of the vapor deposition source 23 is increased, the vapor deposition material is more evenly released in the width direction, and thus the vapor deposition target 10 is further increased in size. However, the vapor deposition apparatus 13 can form a more uniform thin film.

  In the vapor deposition apparatus 14 according to the fourth embodiment, one type of vapor deposition material is discharged from the cylindrical body 34 to form a thin film. That is, the thin film is formed as a thin film of a single vapor deposition material. A total of three vapor deposition sources 24 that emit one kind of vapor deposition material are provided in the cylindrical body 34. Since the number of vapor deposition sources 24 that radiate the same type of material increases to a plurality, the amount of vapor deposition material released increases, so that the vapor deposition apparatus 14 is efficient even when the deposition target 10 is enlarged. A thin film can be formed well. In particular, as in the apparatus according to the fourth embodiment, when the number of the vapor deposition sources 24 is three or more, the vapor deposition material is released more uniformly in the width direction, so that the vapor deposition target 10 becomes larger. In this case, the vapor deposition device 14 can form a more uniform thin film.

  In the third and fourth embodiments, the inside of the cylindrical body is separated into a plurality of separation spaces by a plurality of separation plates provided along the transport direction. Specifically, three separation spaces having substantially the same volume are provided by two separation plates that equally divide the cylindrical body into three equal parts in the width direction. Each separation plate is heated to a temperature at which the vapor deposition material is vaporized. In the third and fourth embodiments, three separation spaces are provided, but the number of separation spaces may be four or more. In addition, since the separation plate separates the internal space of the cylindrical body, the number of separation spaces is one more than the number of separation plates. The same set of vapor deposition sources is provided in the plurality of separation spaces. That is, the same kind of vapor deposition material is radiated to each separation space.

  In the vapor deposition apparatus 13 of the third embodiment, each of the separation spaces 631, 632, 633 is provided with a plurality (two) of vapor deposition sources 23 and for monitoring the radiation of the vapor deposition material from the vapor deposition sources 23. A plurality (two) of sensors 83 are provided. Thereby, even if it is a case where the width | variety of the to-be-deposited body 10 becomes large, the vapor deposition apparatus 13 can form the thin film where thickness was more uniform and the mixing ratio was stable over the width direction. In this embodiment, the sensor 84 provided in each separation space 631,632,633 is for monitoring the radiation | emission of the vapor deposition material of the vapor deposition source 23 provided in the same separation space 631,632,633. Therefore, the vapor deposition apparatus 13 can monitor the radiation of the vapor deposition material from the vapor deposition source 2 in each separation space 631, 632, 633, and can perform vapor deposition with high accuracy. In the central separation space 632 partitioned by the separation plates 531 and 532, sensors 83 are provided on the front wall surface and the rear wall surface. Thereby, the monitoring accuracy can be increased by increasing the distance between the sensor portions 93. Although the sensor 83 may be provided on the separation plates 531 and 532, the sensor 83 is preferably provided on the wall of the cylindrical body 33 because the apparatus is complicated.

  In the vapor deposition apparatus 14 of the fourth embodiment, each of the separation spaces 641, 642, 643 has one vapor deposition source 24 and one vapor deposition material that monitors the radiation of the vapor deposition material from the vapor deposition source 24. A sensor 84 is provided. Thereby, even if it is a case where the width | variety of the to-be-deposited body 10 becomes large, the vapor deposition apparatus 14 can form a more uniform thin film over the width direction. In this embodiment, the sensor 84 provided in each separation space 641, 642, 643 is for monitoring the radiation of the vapor deposition material of the vapor deposition source 24 provided in the same separation space 641, 642, 643. Therefore, the vapor deposition apparatus 14 can monitor the radiation of the vapor deposition material from the vapor deposition source 24 in each separation space 641, 642, 643, and can perform vapor deposition with high accuracy.

  In the vapor deposition apparatuses according to the third and fourth embodiments, the separation plate is provided and the inside of the cylindrical body is partitioned into a plurality of separation spaces, so that the vapor deposition is performed on the vapor deposition target 10 having a long width direction. Even in this case, the radiation of the vapor deposition material can be easily adjusted to adjust the distribution of the vapor deposition amount. In other words, when a vapor deposition apparatus in which the inside of the cylindrical body is in communication without any separation plate is used, if a plurality of vapor deposition sources of the same type are provided in the cylindrical body, the materials are mixed inside the cylindrical body. It will be. Then, even if monitored by the sensor, it becomes impossible to determine which evaporation source the evaporation material is radiated from, and it becomes impossible to appropriately control the radiation amount of the evaporation source. However, in this embodiment, the separation plate is provided to partition the space inside the cylindrical body, and the evaporation source and the sensor are provided in each separation space. Therefore, the radiation of the material from each evaporation source can be easily performed. Can be monitored. Therefore, a thin film can be formed with high accuracy.

  In the third and fourth embodiments, the configuration of the separation plate may be the same as the configuration of the separation plate in the first embodiment. That is, the separation plate is preferably provided so as not to separate the vicinity of the opening of the cylindrical body. In addition, the separation plate is provided so as to cut off the virtual line when a straight line connecting the radiation part of the vapor deposition source in one separation space and the sensor part of the sensor in the other separation space is drawn as a virtual line. It is preferable that Furthermore, the height of the separation plate is preferably higher than the sensor portion of the sensor. Further, the separation plate may be adjustable in height. If the height of the separation plate is too high, it is difficult to obtain a uniform film thickness, and if it is too low, it will adversely affect the monitoring by the sensor, so it is set appropriately.

  In 3rd and 4th embodiment, monitoring of the radiation | emission of the vapor deposition material by a sensor may be the same as that of 1st embodiment. As in the first embodiment, the deposition rate is preferably controlled based on monitoring by a sensor.

  The vapor deposition apparatuses 13 and 14 of the third and fourth embodiments can form a thin film that is uniformly stable over the width direction on the vapor-deposited body 10. Suitable for forming a thin film. For example, in the case of forming a large organic EL element, unevenness in light emission is likely to occur unless the film thickness is uniform. However, in the vapor deposition apparatuses 13 and 14, the thickness is more uniform and the variation in the mixing ratio is reduced. Since the film can be formed, an organic EL element in which uneven emission is suppressed can be obtained. The length in the width direction of the deposition object 10 may be the same as that in the first embodiment, but in this embodiment, the width direction is made larger than that in the deposition object 10 used in the first embodiment. Is possible.

  As described above, the vapor deposition apparatus 13 according to the third embodiment can increase the vapor deposition rate of the vapor deposition material from each vapor deposition source 23 when three or more sets of two kinds of materials are mixed in one cylindrical body 33. It can be individually monitored, and the deposition rate and the dope concentration can be accurately controlled. Therefore, the vapor deposition apparatus 13 can form a mixed thin film with small film thickness and concentration variation on the deposition target 10. Moreover, when the vapor deposition apparatus 14 of 4th embodiment discharge | releases one type of material from the three or more vapor deposition sources 24 to the one cylindrical body 34, vapor deposition of the vapor deposition material from each vapor deposition source 24 is carried out. The rate can be individually monitored, and the deposition rate can be controlled with high accuracy. Therefore, the vapor deposition apparatus 14 can form a thin film with small variations in film thickness on the vapor deposition target 10.

  As described above, the vapor deposition apparatus 13 according to the third embodiment has the same configuration as that of the first embodiment, and further includes the second separation plate 532, the third vapor deposition source 23, and the third sensor 83. This vapor deposition apparatus 14 is used to form a thin film by vapor deposition on the object 10 to be conveyed. The vapor deposition apparatus 13 includes a cylindrical body 33 constituting a hot wall. The cylindrical body 33 includes an opening 43 that faces one surface of the deposition target 10 along the transport direction of the deposition target 10.

  The vapor deposition apparatus 13 includes two separation plates 531 and 532 (a first separation plate 531 and a second separation plate 532) disposed inside the cylindrical body 33. These separating plates 531 and 532 together with the cylindrical body 33 constitute a hot wall. The first separation plate 531 and the inside of the cylindrical body 33 are aligned in a direction perpendicular to the transport direction of the deposition target body 10 along the surface of the opening 43 of the cylindrical body 33 and the first separation space 631 and the first separation space 631. It is separated into two separation spaces 632. Furthermore, the second separation space 632 in which the inside of the cylindrical body 33 is arranged in a direction perpendicular to the transport direction of the deposition target 10 along the surface of the opening 43 of the cylindrical body 33 by the second separation plate 532. And a third separation space 633. That is, by the first separation plate 531 and the second separation plate 532, the inside of the cylindrical body 33 is aligned along the surface of the opening 43 of the cylindrical body 33 in a direction perpendicular to the transport direction of the deposition target 10. The first separation space 631, the second separation space 632, and the third separation space 633 are separated.

  The first separation space 631 has a first vapor deposition source 231 configured to hold the vapor deposition material radiated to the first separation space 631, and the vapor deposition material from the first vapor deposition source 231. And a first sensor 831 configured to detect the radiation. The second separation space 632 includes a second vapor deposition source 232 configured to hold the vapor deposition material radiated to the second separation space 632, and the vapor deposition material from the second vapor deposition source 232. And a second sensor 832 configured to detect the radiation. The third separation space 633 has a third vapor deposition source 233 configured to hold the vapor deposition material radiated to the third separation space 633, and the vapor deposition material from the third vapor deposition source 233. And a third sensor 833 configured to detect the radiation.

  Each of the first, second, and third vapor deposition sources 231, 232, and 233 includes a plurality of vapor deposition sources 23. In the present embodiment, each of the first, second and third vapor deposition sources 231, 232 and 233 includes two vapor deposition sources 23, a vapor deposition source 23a and a vapor deposition source 23b.

  In the present embodiment, the vapor deposition material held by the first vapor deposition source 231, the vapor deposition material held by the second vapor deposition source 232, and the vapor deposition material held by the third vapor deposition source 233 are the same type. It is. That is, the vapor deposition source 23a included in the first vapor deposition source 231, the vapor deposition source 23a included in the second vapor deposition source 232, and the vapor deposition source 23a included in the third vapor deposition source 233 are the same type of vapor deposition material. It is comprised so that (dopant material) may be hold | maintained. The vapor deposition source 23b included in the first vapor deposition source 231, the vapor deposition source 23b included in the second vapor deposition source 232, and the vapor deposition source 23b included in the third vapor deposition source 233 are also the same type of vapor deposition material (host material). ).

  Each of the first, second, and third sensors 831, 832, and 833 includes a plurality of sensors 83. In the present embodiment, each of the first, second, and third sensors 831, 832, and 833 includes two sensors 83 that are a sensor 83a and a sensor 83b.

  The first separation plate 531 is configured not to separate the inside of the cylindrical body 33 in the vicinity of the opening 43. The first separation plate 531 blocks a virtual straight line connecting the radiation part 73 of the first and second vapor deposition sources 231 and 232 and the sensor part 93 of the second and first sensors 832 and 831. Is configured to do. The second separation plate 532 is also configured not to separate the inside of the cylindrical body 33 in the vicinity of the opening 43. The second separation plate 532 blocks a virtual straight line connecting the radiation part 73 of the second and third vapor deposition sources 232 and 233 and the sensor part 93 of the third and second sensors 833 and 832 respectively. Is configured to do.

  As described above, the vapor deposition apparatus 14 according to the fourth embodiment has the same configuration as that of the second embodiment, and further includes the second separation plate 542, the third vapor deposition source 243, and the third sensor 843. This vapor deposition apparatus 14 is used to form a thin film by vapor deposition on the object 10 to be conveyed. The vapor deposition apparatus 14 includes a cylindrical body 84 constituting a hot wall. The cylindrical body 84 includes an opening 44 that faces one surface of the deposition target body 10 along the transport direction of the deposition target body 10.

  The vapor deposition apparatus 14 includes two separation plates 541 and 542 (a first separation plate 541 and a second separation plate 542) disposed inside the cylindrical body 84. These separation plates 541 and 542 together with the cylindrical body 34 constitute a hot wall. Due to the first separation plate 541, the inside of the cylindrical body 34 is aligned along the surface of the opening 44 of the cylindrical body 34 in the direction perpendicular to the transport direction of the deposition target 10 and the first separation space 641 and the first separation space 641. It is separated into two separation spaces 642. Furthermore, the second separation space 642 in which the inside of the cylindrical body 34 is arranged in the direction perpendicular to the transport direction of the deposition target body 10 along the surface of the opening 44 of the cylindrical body 34 by the second separation plate 542. And a third separation space 643. That is, by the first separation plate 541 and the second separation plate 542, the inside of the cylindrical body 34 is aligned along the surface of the opening 44 of the cylindrical body 34 in a direction perpendicular to the transport direction of the deposition target 10. The first separation space 641, the second separation space 642, and the third separation space 643 are separated.

  In the first separation space 641, a first deposition source 241 configured to hold the deposition material radiated to the first separation space 641, and a deposition material from the first deposition source 241. And a first sensor 841 configured to detect the radiation. In the second separation space 642, a second deposition source 242 configured to hold the deposition material radiated to the second separation space 642, and the deposition material from the second deposition source 242. And a second sensor 842 that is configured to detect the radiation. The third separation space 643 has a third deposition source 243 configured to hold the deposition material radiated to the third separation space 643, and the deposition material from the third deposition source 243. And a third sensor 843 that is configured to detect the radiation.

  Each of the first, second, and third vapor deposition sources 241, 242, and 243 includes one vapor deposition source 24. In the present embodiment, the vapor deposition material held by the first vapor deposition source 241, the vapor deposition material held by the second vapor deposition source 242, and the vapor deposition material held by the third vapor deposition source 243 are the same type. It is.

  Each of the first, second, and third sensors 841, 842, and 843 includes one sensor 84.

  The first separation plate 541 is configured not to separate the inside of the cylindrical body 34 in the vicinity of the opening 44. The first separation plate 541 blocks an imaginary straight line connecting the radiation part 74 of the first and second vapor deposition sources 241 and 242 and the sensor part 94 of the second and first sensors 842 and 841. Is configured to do. The second separation plate 542 is also configured not to separate the inside of the cylindrical body 34 in the vicinity of the opening 44. The second separation plate 542 blocks an imaginary straight line connecting the radiation part 74 of the second and third vapor deposition sources 242, 243 and the sensor part 94 of the third and second sensors 843, 842, respectively. Is configured to do.

  In the first and second embodiments, a single separation plate is arranged inside the cylindrical body, so that the space inside the cylindrical body is separated into two separation spaces. In this embodiment, by arranging two separation plates inside the cylindrical body, the space inside the cylindrical body is separated into three separation spaces, but the number of separation plates and separation spaces is as follows: It is not limited to these. That is, by arranging three or more separation plates inside the cylindrical body, the space inside the cylindrical body is separated into four or more separation spaces, and a vapor deposition source and a sensor are provided in each separation space. May be.

  In FIG. 5, the vapor deposition apparatus 15 which concerns on 5th embodiment is shown. This vapor deposition apparatus 15 has the same configuration as the vapor deposition apparatus 13 according to the third embodiment, and further includes a shield 30. The vapor deposition apparatus 15 is used to form a thin film on the conveyed vapor deposition target 10 by vapor deposition. The vapor deposition apparatus 15 includes a cylindrical body 35 constituting a hot wall. The cylindrical body 35 includes an opening 45 facing one surface of the deposition target body 10 along the transport direction of the deposition target body 10.

  The vapor deposition apparatus 15 includes two separation plates 551 and 552 (a first separation plate 551 and a second separation plate 552) disposed inside the cylindrical body 35. These separation plates 551 and 552 together with the cylindrical body 35 constitute a hot wall. The first separation plate 551 causes the inside of the cylindrical body 35 to be aligned along the surface of the opening 45 of the cylindrical body 35 in the direction perpendicular to the transport direction of the deposition target 10 and the first separation space 651 and the first separation space 651. It is separated into two separation spaces 652. Further, a second separation space 652 in which the inside of the cylindrical body 35 is arranged in a direction perpendicular to the transport direction of the deposition target body 10 along the surface of the opening 45 of the cylindrical body 35 by the second separation plate 552. And a third separation space 653.

  The first separation space 651 includes a first vapor deposition source 251 configured to hold the vapor deposition material radiated to the first separation space 651, and the vapor deposition material from the first vapor deposition source 251. And a first sensor 851 configured to detect the radiation. The second separation space 652 has a second deposition source 252 configured to hold the deposition material radiated to the second separation space 652, and the deposition material from the second deposition source 252. And a second sensor 852 configured to detect the radiation. The third separation space 653 has a third vapor deposition source 253 configured to hold the vapor deposition material radiated to the third separation space 653, and the vapor deposition material from the third vapor deposition source 253. And a third sensor 853 configured to detect this radiation.

  Each of the first, second, and third vapor deposition sources 251, 252, and 253 includes a plurality of vapor deposition sources 25. In the present embodiment, each of the first, second, and third vapor deposition sources 251, 252, and 253 includes two vapor deposition sources 25, a vapor deposition source 25a and a vapor deposition source 25b.

  In the present embodiment, the vapor deposition material held in the first vapor deposition source 251, the vapor deposition material held in the second vapor deposition source 252, and the vapor deposition material held in the third vapor deposition source 253 are the same type. It is. That is, the vapor deposition source 25a included in the first vapor deposition source 251, the vapor deposition source 25a included in the second vapor deposition source 252 and the vapor deposition source 25a included in the third vapor deposition source 253 are the same type of vapor deposition material. It is comprised so that (dopant material) may be hold | maintained. The vapor deposition source 25b included in the first vapor deposition source 251, the vapor deposition source 25b included in the second vapor deposition source 252 and the vapor deposition source 25b included in the third vapor deposition source 253 are also the same type of vapor deposition material (host material). ).

  Each of the first, second, and third sensors 851, 852, and 853 includes a plurality of sensors 85. In the present embodiment, each of the first, second, and third sensors 851, 852, and 853 includes two sensors 85, that is, a sensor 85a and a sensor 85b.

  The shield 30 is configured to partially shield the inside of the cylindrical body 35 along the surface of the opening 45. A plurality of shields 30 are provided side by side in the axial direction of the cylindrical body 35. Each of the plurality of shields 30 includes an opening 304. The opening 304 of the shield 30 adjacent to the cylindrical body 35 in the axial direction does not overlap in the axial direction.

  Each of the plurality of shielding bodies 30 includes portions 301, 302, and 303 that partially shield each of the plurality of separation spaces 651, 652, and 653. That is, each of the plurality of shields 30 includes a portion 301 that partially shields the first separation space 651, a portion 302 that partially shields the second separation space 652, and a third separation space 653. A partially shielding portion 303. Each of these portions 301, 302, 303 includes an opening 304.

  These shields 30 are arranged at positions closer to the opening 45 side of the cylindrical body 35 than the first sensor 851, the second sensor 852, and the third sensor 853. That is, each shield 30 is arranged at a position closer to the opening 45 side of the cylindrical body 35 than any sensor 85.

  As in the case of the third embodiment, the vapor deposition apparatus 15 according to this embodiment forms a thin film with small variations in film thickness and composition on the vapor deposition target 10 even when the vapor deposition target 10 is large. Can do. In particular, in this embodiment, the arrival of a substance that causes a disturbance to each sensor 85 is shielded by the shield 30. The substance that causes disturbance is a substance that causes a decrease in the detection accuracy of the sensor 85, and examples thereof include a vapor deposition substance that is released from one separation space and then enters another separation space. For this reason, the thin film can be formed more accurately by improving the detection accuracy of each sensor 85.

  Further, in the present embodiment, a plurality of types of vapor deposition materials pass through the shield 30 so that these vapor deposition materials are well mixed. For this reason, the dispersion | variation in the composition of a thin film becomes smaller.

  In the present embodiment, a plurality of shields 30 are provided, but only one shield 30 may be provided.

  FIG. 6 shows a first modification of the fifth embodiment. In the present modification, the positions of the vapor deposition source 25 and the sensor 85 are changed in the fifth embodiment. In this modification, a plurality of vapor deposition sources 25 provided in each of the plurality of separation spaces 651, 652, and 653 are arranged along the conveyance direction of the vapor deposition target 10. That is, the two vapor deposition sources 25a and 25b included in the first vapor deposition source 251 are arranged along the transport direction of the deposition target 10, and the two vapor deposition sources 25a and 25b included in the second vapor deposition source 252 are Two vapor deposition sources 25 a and 25 b included in the third vapor deposition source 253 are arranged along the conveyance direction of the vapor deposition target 10, and are arranged along the conveyance direction of the vapor deposition target 10. Further, the plurality of sensors 85 provided in each of the plurality of separation spaces 651, 652, 653 are also arranged along the transport direction of the deposition target 10. That is, the two sensors 85 a and 85 b included in the first sensor 851 are arranged along the transport direction of the deposition target 10, and the two sensors 85 a and 85 b included in the second sensor 852 are aligned with the deposition target 10. The two sensors 85 a and 85 b included in the third sensor 853 are aligned along the transport direction of the deposition target 10. In the present embodiment, the sensor 85a and the sensor 85b are respectively attached to two wall surfaces of the cylindrical body 35 facing each other in the transport direction of the deposition target 10. Thereby, arrangement | positioning of the two sensors 85a and 85b located in a line in the conveyance direction of the to-be-deposited body 10 in each separation space 651, 652, 653 is achieved easily.

  In this modified example, in each separation space 651, 652, 653, a plurality of vapor deposition sources 25 are arranged along the transport direction of the deposition object 10. The inclination of the concentration distribution of the vapor deposition material is likely to occur along the conveyance direction of the deposition object 10. In this manner, the deposition material is detected by the sensor 85 in a state where the concentration distribution is inclined. For this reason, the vapor deposition rate of each vapor deposition material can be measured with higher accuracy, and the thickness and composition of the thin film formed by vapor deposition can be controlled with higher accuracy.

  FIG. 7 shows a second modification of the fifth embodiment. In the present modification, the position of the sensor 85 is changed in the fifth embodiment. In this modification, the sensor 85 is attached to each of the plurality of vapor deposition sources 25. That is, the sensors 85a and 85b included in the first sensor 851 are attached to the evaporation sources 25a and 25b included in the first evaporation source 251, respectively. Sensors 85a and 85b included in the second sensor 852 are attached to the vapor deposition source 25a and the vapor deposition source 25b included in the second vapor deposition source 252, respectively. Sensors 85a and 85b included in the third sensor 853 are attached to the evaporation source 25a and the evaporation source 25b included in the third evaporation source 253, respectively.

  In this modification, the vapor deposition material vaporized by each vapor deposition source 25 is detected by a sensor 85 provided in the vapor deposition source 25 before being emitted from the vapor deposition source 25. For this reason, when a plurality of types of vapor deposition materials are discharged into the separation spaces 651, 652, 653, the vapor deposition materials are detected by the sensor 85 before the vapor deposition materials are mixed. For this reason, the vapor deposition rate of each vapor deposition material can be measured with higher accuracy, and the thickness and composition of the thin film formed by vapor deposition can be controlled with higher accuracy.

  FIG. 8 is an example of a vapor deposition system including a plurality of vapor deposition apparatuses 1. This vapor deposition system can be used as an organic electroluminescence element manufacturing apparatus (organic EL manufacturing apparatus). This vapor deposition system can be formed by sequentially laminating thin films by vapor deposition on the object to be vapor-deposited 10 using a plurality of vapor deposition apparatuses 11 and 12. Thereby, the organic EL manufacturing apparatus can efficiently manufacture an electric device such as an organic EL element in-line. FIG. 8 illustrates a state in which the two vapor deposition apparatuses 11 and 12 are sequentially arranged from the upstream side to the downstream side in the transport direction (white arrow). In addition, three or more vapor deposition apparatuses may be sufficient. For example, the same number of vapor deposition apparatuses as the number of thin films formed by vapor deposition may be used. As a plurality of vapor deposition apparatuses, a vapor deposition material having a plurality of vapor deposition materials as in the first embodiment and a vapor deposition apparatus 12 having a single vapor deposition material as in the second embodiment are mixed. Can be arranged. That is, as illustrated in FIG. 5, for example, the vapor deposition system can include the vapor deposition apparatus 11 according to the first embodiment and the vapor deposition apparatus 12 according to the second embodiment. Thereby, it becomes possible for a vapor deposition system to form suitable layers, such as a light emitting layer and a charge transport layer, according to material. The vapor deposition system may include two or more vapor deposition apparatuses among the vapor deposition apparatuses 11, 12, 13, 14, and 15 according to the first to fifth embodiments.

  The vapor deposition system in the form of FIG. 8 includes a conveyance unit 20 that conveys the vapor deposition target 10. The conveyance means 20 is configured by an appropriate conveyance mechanism such as a conveyor. By being transported by the transport mechanism, the deposition target 10 can pass over the vapor deposition apparatuses 11 and 12 sequentially along the line from the upstream side to the downstream side in the transport direction. The transport unit 20 includes a support member configured to support, for example, an end in the width direction of the deposition target 10. In this case, the conveyance means 20 supports the vapor deposition body 10 together with the support member while supporting the end of the vapor deposition body 10 in the width direction with the support member and exposing the lower surface of the vapor deposition body 10 to the outside. Configured as follows. Since the lower surface of the body to be deposited 10 is exposed, the deposition material released from the cylindrical bodies 31 and 32 can be deposited on the surface to form a thin film. For example, the deposition object 10 includes at least a substrate. For example, a substrate having a transparent electrode formed on the surface is used as the vapor deposition target 10. A substrate on which a transparent electrode and a part of the organic layer are formed may be used as the deposition target 10. The substrate is set on an appropriate support member so that the surface on which the thin film is formed faces downward. Thereby, the to-be-deposited body 10 can be comprised. In addition, the conveyance means 20 may be configured to include a conveyor such as a roller or a belt disposed at each end in the width direction, and to convey the substrate with the end in the width direction of the substrate placed on the conveyor. . In vapor deposition, a mask may be superimposed on the lower surface of the vapor-deposited body 10. Thereby, the vapor deposition system can prevent the outer peripheral part of the to-be-deposited body 10 from vapor-depositing, or can laminate | stack a thin film with a suitable pattern.

  Since the vapor deposition system of FIG. 8 can form a thin film sequentially and more uniformly and stably on the large vapor-deposited body 10, the organic EL production apparatus can efficiently produce a large organic EL element. it can. The thickness of each layer constituting the manufactured organic EL element is uniform over the entire width direction (direction perpendicular to the transport direction), particularly in a mixed layer (that is, a layer containing two or more materials). The mixing ratio of materials (dope amount, etc.) is stable over the entire width direction. For this reason, unevenness of light emission of the organic EL element is reduced, and more uniform planar light emission can be obtained. Therefore, the organic EL element manufactured by this organic EL manufacturing apparatus can be effectively used as a planar lighting device.

  The inventors examined the change in the film thickness distribution due to the difference in the height of the separator in the vapor deposition apparatus as follows. As the vapor deposition apparatus, as in the second embodiment shown in FIGS. 3A and 3B, a vapor deposition apparatus that discharges one kind of vapor deposition material was used. That is, in this vapor deposition apparatus, the inside of the cylindrical body was equally divided into two separation spaces by one separation plate, and one vapor deposition source was provided in each separation space. The height of the cylindrical body was 400 mm, the length in the width direction (direction perpendicular to the transport direction) was 840 mm, and the length in the transport direction was 100 mm. The sensor part of the sensor was disposed at a position 300 mm below the upper end of the cylindrical body. As the deposition target, a substrate (plate-like base material) having a width of 730 mm and a length in the transport direction of 920 mm was used. As the separation plate, a steel plate having a thickness of 3 mm was used, and this separation plate was disposed at the center of the cylindrical body. The deposition target was transported so that the positions of the central part in the width direction of the deposition target and the central part in the width direction of the cylindrical body matched.

FIG. 9 is a graph showing the thickness distribution of thin films formed in two examples (thin film example 1 and thin film example 2) having different heights from each other. The horizontal axis is the “distance from the center of the substrate”, which indicates the distance from the central portion in the width direction of the deposition target, with one end being a positive number and the other end being negative. Shown in number. The vertical axis represents the “particle density” of the laminated thin films, which is an index equal to the thickness distribution. Note that “E” is used to represent the numerical value by an index, and for example, 2E + 20 is 2 × 10 ²⁰ . In Thin Film Example 1, the position of the upper end portion of the separation plate was 30 mm below the upper end of the cylindrical body. The position of the upper end portion of the separation plate was above the sensor portion of the sensor. In thin film example 2, the height of the separation plate was the same as the height of the cylindrical body, and the opening of the cylindrical body was separated by the separation plate.

  As shown in thin film example 2 in FIG. 9, when the height of the separation plate is the same as the height of the cylindrical body, the film thickness in the vicinity immediately above the separation plate (near the center of the substrate) becomes thin, and the uniformity of the film thickness distribution is It became ± 5% or more (the maximum value and the minimum value exceeded the range of 5% from the average value). The film thickness distribution of the thin film had a dent at the center in the width direction. This is considered to be because the vapor deposition material released below the separator plate decreases. In addition, the convex part is formed in the dent and the thickness of the thin film is a little thick. This convex part was formed when the vapor deposition material discharge | released from two adjacent separation spaces accumulated repeatedly.

  On the other hand, as shown in thin film example 1 in FIG. 9, when the height of the separation plate is lower than the position of the opening and the separation plate does not separate the vicinity of the opening of the cylindrical body, the film thickness distribution is the central portion in the width direction. The uniformity of the film thickness distribution was ± 3% or less (the maximum value and the minimum value were within 3% of the average value). Further, when the position of the upper end portion of the separation plate is 60 mm below the upper end of the cylindrical body, the uniformity of the film thickness distribution is ± 1% or less (the maximum value and the minimum value are in the range of 1% from the average value). Inside).

  Note that although the film thickness is small at the edge of the substrate, there is no problem because a thin film may not be formed at the edge of the substrate in many cases.

  Thus, when the height of the separation plate is lower than the height of the cylindrical body, the film thickness distribution of the deposition target is adjusted, and it is confirmed that a thin film with a smaller thickness variation is formed on the deposition target. It was done.

Claims (7)

Used to form a thin film by vapor deposition on the object to be transported,
A vapor deposition apparatus comprising a cylindrical body constituting a hot wall, the cylindrical body having an opening facing one surface of the vapor-deposited body along the transport direction of the vapor-deposited body,
A separation plate disposed inside the cylindrical body and constituting the hot wall is provided, and the separation plate allows the inside of the cylindrical body to be transported along the surface of the opening. Are separated into a first separation space and a second separation space,
In the first separation space, a first vapor deposition source configured to hold the vapor deposition material radiated to the first separation space, and radiation of the vapor deposition material from the first vapor deposition source. A first sensor configured to detect is provided,
The second separation space has a second vapor deposition source configured to hold the vapor deposition material radiated to the second separation space, and radiation of the vapor deposition material from the second vapor deposition source. A vapor deposition apparatus, comprising: a second sensor configured to detect. The separation plate is configured not to separate the inside of the cylindrical body in the vicinity of the opening,
The separation plate is configured to block virtual straight lines connecting the radiation portions of the first and second vapor deposition sources and the sensor portions of the second and first sensors, respectively. The vapor deposition apparatus according to claim 1. The first and second vapor deposition sources are each composed of a plurality of vapor deposition sources, and each of the first and second sensors is composed of a plurality of sensors. Vapor deposition equipment. The second separator is disposed inside the cylindrical body and constitutes the hot wall, and the second separator allows the inside of the cylindrical body to extend along the surface of the opening. It is separated into the second separation space and the third separation space, which are arranged in a direction perpendicular to the transport direction of the deposition target,
In the third separation space, a third deposition source configured to hold the deposition material radiated to the third separation space, and radiation of the deposition material from the third deposition source. A third sensor configured to detect is provided,
The vapor deposition material held in the first vapor deposition source, the vapor deposition material held in the second vapor deposition source, and the vapor deposition material held in the third vapor deposition source are the same type. The vapor deposition apparatus of any one of Claims 1-3. A shielding body configured to partially shield the inside of the cylindrical body along the surface of the opening, the shielding body being more than the first sensor and the second sensor; It arrange | positions in the position near opening side, The vapor deposition apparatus of any one of Claims 1-4 characterized by the above-mentioned. The vapor deposition apparatus according to claim 5, wherein a plurality of the shielding bodies are provided side by side in the axial direction of the cylindrical body. The vapor deposition apparatus according to claim 6, wherein each of the plurality of shielding bodies includes an opening, and the openings of the shielding bodies adjacent to each other in the axial direction of the cylindrical body do not overlap in the axial direction.

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