JPH10176262A - Vapor deposition device - Google Patents
Vapor deposition deviceInfo
- Publication number
- JPH10176262A JPH10176262A JP35352396A JP35352396A JPH10176262A JP H10176262 A JPH10176262 A JP H10176262A JP 35352396 A JP35352396 A JP 35352396A JP 35352396 A JP35352396 A JP 35352396A JP H10176262 A JPH10176262 A JP H10176262A
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- substrate
- particles
- incident angle
- deposition material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
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- Physical Vapour Deposition (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、基板を搬送しなが
ら薄膜を形成する通過型の蒸着装置に関し、特にＰＤＰ
（プラズマディスプレイパネル）の誘電体保護膜を形成
するための蒸着装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pass-through type vapor deposition apparatus for forming a thin film while transporting a substrate, and more particularly to a PDP.
The present invention relates to a vapor deposition device for forming a dielectric protective film of a (plasma display panel).
【０００２】[0002]
【従来の技術】従来、大面積の基板へ薄膜を形成する蒸
着装置としては、一般に基板通過方式を採用した蒸着装
置が用いられている。2. Description of the Related Art Conventionally, as a vapor deposition apparatus for forming a thin film on a substrate having a large area, a vapor deposition apparatus employing a substrate passing method is generally used.
【０００３】図９（ａ）（ｂ）に、従来の基板通過方式
の蒸着装置の概略構成を示す。図９（ａ）（ｂ）に示す
ように、この蒸着装置１０１は、概略、蒸着室１０２
と、その両側に搬送室１０３、１０４が設けられ、これ
らは図示しない真空排気系に連結されている。そして、
蒸着すべき例えばガラスからなる基板１０５が搬送室１
０３から蒸着室１０２に連続的にｘ方向に搬送され、こ
の蒸着室１０２を通過して搬送室１０４に向って搬送さ
れる。FIGS. 9A and 9B show a schematic configuration of a conventional substrate-passing type vapor deposition apparatus. As shown in FIGS. 9A and 9B, the vapor deposition apparatus 101 generally includes a vapor deposition chamber 102.
And transfer chambers 103 and 104 are provided on both sides thereof, and these are connected to a vacuum exhaust system (not shown). And
The substrate 105 made of, for example, glass to be deposited is in the transfer chamber 1
From 03, the wafer is continuously transported in the x direction to the vapor deposition chamber 102, passes through the vapor deposition chamber 102, and is transported toward the transport chamber 104.
【０００４】一方、蒸着室１０２の下方には、水冷銅ハ
ース１０７に４つの蒸発源１０８ａ、１０８ｂ、１０８
ｃ、１０８ｄが設けられる。そして、２つの電子銃１０
６ａ、１０６ｂから各蒸発源１０８ａ、１０８ｂ、１０
８ｃ、１０８ｄに対して電子ビームを照射することによ
りそれぞれの蒸着材料を蒸発させ、基板１０５上に蒸着
を行う。On the other hand, below the vapor deposition chamber 102, four evaporation sources 108a, 108b, 108
c and 108d are provided. And two electron guns 10
6a, 106b to the respective evaporation sources 108a, 108b, 10
By irradiating the electron beams 8c and 108d with an electron beam, the respective evaporation materials are evaporated, and evaporation is performed on the substrate 105.
【０００５】かかる蒸着装置１０１を用いれば、蒸着す
べき基板１０５の幅が１ｍ以上ある場合であっても、基
板１０５の搬送方向と直交する方向（ｙ方向）に４つの
蒸発源１０８ａ、１０８ｂ、１０８ｃ、１０８ｄが設け
られていることから、基板１０５の幅方向の膜厚分布を
均一にすることができる。[0005] By using the vapor deposition apparatus 101, even when the width of the substrate 105 to be vapor-deposited is 1 m or more, the four vapor sources 108a, 108b, Since the layers 108c and 108d are provided, the film thickness distribution in the width direction of the substrate 105 can be made uniform.
【０００６】[0006]
【発明が解決しようとする課題】ところで、従来の蒸着
装置１０１の場合、各蒸発源１０８ａ、１０８ｂ、１０
８ｃ、１０８ｄから蒸発した蒸着材料の粒子１１０は、
基板１０５に対して垂直に入射した粒子と、基板１０５
に対して大きな入射角で入射した粒子が混入した状態で
蒸着膜が形成される。例えば、図１０（ａ）（ｂ）に示
すように、従来の蒸着装置１０１の場合、各蒸発源１０
８ａ、１０８ｂ、１０８ｃ、１０８ｄかから飛び出す蒸
着材料の粒子１１０の角度は、θ1＝７°、θ2＝６５°、
θ3＝５５°、θ4＝３５°、θ5＝４２°で、最大入射
角は６５°にもなる。In the case of the conventional vapor deposition apparatus 101, each of the evaporation sources 108a, 108b, 10
8c, the particles 110 of the evaporation material evaporated from 108d
A particle perpendicularly incident on the substrate 105;
The vapor deposition film is formed in a state in which particles incident at a large incident angle with respect to are mixed. For example, as shown in FIGS. 10A and 10B, in the case of the conventional evaporation apparatus 101, each evaporation source 10
8a, 108b, 108c, and 108d, the angles of the particles 110 of the vapor deposition material that protrude from the surface are θ 1 = 7 °, θ 2 = 65 °,
When θ 3 = 55 °, θ 4 = 35 °, θ 5 = 42 °, the maximum incident angle becomes 65 °.
【０００７】このような大きな入射角を持つ蒸着材料の
粒子１１０が膜中に入射した場合、特にＭｇＯ膜の場合
には、膜の結晶性の低下や膜密度の低下が生じる。Ｍｇ
Ｏ膜は、交流型プラズマディスプレイパネル用の誘電体
保護膜として用いられる場合があるが、その場合には、
プラズマディスプレイパネルの放電電圧が上昇するとと
もに、パネルとしての寿命が低下するという欠点があっ
た。When the particles 110 of the vapor deposition material having such a large incident angle enter the film, particularly in the case of the MgO film, the crystallinity of the film and the film density decrease. Mg
The O film may be used as a dielectric protection film for an AC type plasma display panel, in which case,
There is a drawback that the discharge voltage of the plasma display panel increases and the life of the panel decreases.
【０００８】本発明は、このような従来の技術の課題を
解決するためになされたもので、基板に堆積する蒸着材
料の粒子の入射角を制限することによって高品位の膜質
を有する薄膜を形成しうる蒸着装置を提供することを目
的とするものである。The present invention has been made in order to solve the problems of the prior art, and forms a thin film having high quality by limiting the incident angle of particles of a vapor deposition material deposited on a substrate. It is an object of the present invention to provide a deposition apparatus that can perform the above-described steps.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、請求項１記載の発明は、真空下で搬送される基体上
に蒸着材料を蒸着して薄膜を形成するための蒸着装置で
あって、上記基体に付着する蒸着材料の粒子の入射角が
所定の角度より大きくならないように当該粒子の入射角
を規制する入射角規制手段を設けたことを特徴とする。According to one aspect of the present invention, there is provided a vapor deposition apparatus for depositing a vapor deposition material on a substrate conveyed under vacuum to form a thin film. Further, an incident angle regulating means for regulating the incident angle of the particles of the vapor deposition material adhering to the substrate so as not to be larger than a predetermined angle is provided.
【００１０】この場合、請求項２記載の発明のように、
請求項１記載の発明において、入射角規制手段として、
基体に対する入射角が所定の角度より大きい蒸着材料の
粒子を遮る蒸着材遮蔽部材を設けることも効果的であ
る。In this case, as in the second aspect of the present invention,
In the invention according to claim 1, as the incident angle regulating means,
It is also effective to provide a vapor deposition material shielding member that blocks particles of the vapor deposition material whose incident angle with respect to the substrate is larger than a predetermined angle.
【００１１】また、請求項３記載の発明のように、請求
項２記載の発明において、蒸着材料の蒸発源に対し、基
体の搬送方向の上流側及び下流側に蒸着材遮蔽部材を設
けることも効果的である。Further, as in the invention according to claim 3, in the invention according to claim 2, the evaporation material shielding member may be provided on the upstream side and the downstream side in the transport direction of the substrate with respect to the evaporation source of the evaporation material. It is effective.
【００１２】さらに、請求項４記載の発明のように、請
求項２又は３のいずれか１項記載の発明において、基体
の搬送方向に対して交差方向に複数の蒸発源を配すると
ともに、当該交差方向について、上記各蒸発源について
の蒸着材遮蔽部材を設けることも効果的である。Further, as in the invention according to claim 4, in the invention according to any one of claims 2 and 3, a plurality of evaporation sources are arranged in a direction intersecting the transport direction of the substrate, and It is also effective to provide a deposition material shielding member for each of the evaporation sources in the cross direction.
【００１３】さらにまた、請求項５記載の発明のよう
に、請求項１乃至４のいずれかに記載の発明において、
蒸着材料としてＭｇＯを用い、基体に対するＭｇＯの粒
子の入射角が３５度より大きくならないように当該粒子
の入射角を規制することも効果的である。Further, like the invention according to claim 5, in the invention according to any one of claims 1 to 4,
It is also effective to use MgO as a vapor deposition material and regulate the angle of incidence of the particles of MgO so that the angle of incidence of the particles on the substrate does not exceed 35 degrees.
【００１４】請求項１記載の発明の場合、基体に付着す
る蒸着材料の粒子の入射角が所定の角度より大きくなら
ないように当該粒子の入射角が規制されるため、従来技
術のような蒸着膜の結晶性の低下や膜密度の低下といっ
た問題を回避することができる。In the case of the first aspect of the present invention, the incident angle of the particles of the vapor deposition material adhering to the substrate is regulated so that the incident angle of the particles is not larger than a predetermined angle. Problems such as reduced crystallinity and reduced film density can be avoided.
【００１５】この場合、請求項２記載の発明のように、
請求項１記載の発明において、入射角規制手段として、
基体に対する入射角が所定の角度より大きい蒸着材料の
粒子を遮る蒸着材遮蔽部材を設ければ、基体に対する入
射角が所定の角度より大きい蒸着材料の粒子は基体に到
達せず、容易に蒸着材料の粒子の入射角を規制すること
ができる。In this case, as in the second aspect of the present invention,
In the invention according to claim 1, as the incident angle regulating means,
If a vapor deposition material shielding member that blocks particles of the vapor deposition material whose incident angle with respect to the substrate is larger than a predetermined angle is provided, particles of the vapor deposition material whose incident angle with respect to the substrate is larger than the predetermined angle do not reach the substrate, and the vapor deposition material can be easily formed. Angle of incidence of the particles can be regulated.
【００１６】また、請求項３記載の発明のように、請求
項２記載の発明において、蒸着材料の蒸発源に対し、基
体の搬送方向の上流側及び下流側に蒸着材遮蔽部材を設
ければ、基体の搬送方向について、基体に対する蒸着材
料の粒子の入射角を規制することができる。According to a third aspect of the present invention, in the second aspect of the present invention, a vapor deposition material shielding member is provided on the upstream and downstream sides in the substrate transport direction with respect to the evaporation source of the vapor deposition material. In addition, the incident angle of the particles of the vapor deposition material with respect to the substrate in the transport direction of the substrate can be regulated.
【００１７】さらに、請求項４記載の発明のように、請
求項２又は３のいずれか１項記載の発明において、基体
の搬送方向に対して交差方向に複数の蒸発源を配すると
ともに、当該交差方向について、上記各蒸発源について
の蒸着材遮蔽部材を設ければ、各蒸発源から蒸発する蒸
着材料の粒子の基体に対する入射角を規制することがで
き、その結果、基体が大きい場合であっても、蒸着膜の
結晶性の低下や膜密度の低下といった問題を生じさせる
ことなく、均一な膜厚分布の膜を形成することができ
る。Further, as in the invention according to claim 4, in the invention according to any one of claims 2 and 3, a plurality of evaporation sources are arranged in a direction intersecting with the transport direction of the substrate. By providing a vapor deposition material shielding member for each of the above evaporation sources in the cross direction, it is possible to regulate the incident angle of the particles of the vapor deposition material evaporated from each of the evaporation sources with respect to the substrate, and as a result, when the substrate is large. However, a film having a uniform thickness distribution can be formed without causing problems such as a decrease in crystallinity of the deposited film and a decrease in film density.
【００１８】さらにまた、請求項５記載の発明のよう
に、請求項１乃至４のいずれか１項記載の発明におい
て、蒸着材料としてＭｇＯを用い、基体に対するＭｇＯ
の粒子の入射角が３５度より大きくならないように当該
粒子の入射角を規制すれば、例えば、プラズマディスプ
レイパネルの保護膜を形成した場合において、放電電圧
の上昇を防止することができるとともに、パネルの寿命
を延ばすことができる。Further, as in the invention according to claim 5, in the invention according to any one of claims 1 to 4, MgO is used as a vapor deposition material, and MgO is deposited on a substrate.
If the incident angle of the particles is controlled so that the incident angle of the particles does not become larger than 35 degrees, for example, when a protective film of a plasma display panel is formed, it is possible to prevent an increase in discharge voltage, Life can be extended.
【００１９】[0019]
【発明の実施の形態】以下、本発明に係る蒸着装置の好
ましい実施の形態を図１〜図８を参照して詳細に説明す
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a vapor deposition apparatus according to the present invention will be described below in detail with reference to FIGS.
【００２０】図１（ａ）（ｂ）は、本実施の形態の蒸着
装置の概略構成を示すものである。図１（ａ）（ｂ）に
示すように、この蒸着装置１は、概略、蒸着室２と、そ
の両側に搬送室３、４が設けられ、これらは図示しない
真空排気系に連結されている。そして、蒸着すべき例え
ばガラスからなる基板５が搬送室３から蒸着室２にｘ方
向に搬送され、この蒸着室２で蒸着された後に搬送室４
に向って搬送されるように構成される。この場合、図１
（ｂ）に示すように、多数の基板５が連続して蒸着室２
を通過するように構成されている。FIGS. 1A and 1B show a schematic configuration of a vapor deposition apparatus according to the present embodiment. As shown in FIGS. 1A and 1B, the vapor deposition apparatus 1 generally includes a vapor deposition chamber 2 and transfer chambers 3 and 4 on both sides thereof, and these are connected to a vacuum exhaust system (not shown). . Then, a substrate 5 made of, for example, glass to be vapor-deposited is transported from the transport chamber 3 to the vapor deposition chamber 2 in the x-direction.
It is configured to be conveyed toward. In this case, FIG.
As shown in (b), a large number of substrates 5 are continuously deposited in the vapor deposition chamber 2.
It is configured to pass through.
【００２１】一方、蒸着室２の下方には、水冷銅ハース
７によって加熱される４つの蒸発源８（８ａ、８ｂ、８
ｃ、８ｄ）が設けられる。なお、本実施の形態の場合、
各蒸発源８ａ、８ｂ、８ｃ、８ｄの蒸着材料としては、
例えばＭｇＯが用いられる。そして、蒸着室２の下方に
２つの電子銃６ａ、６ｂが設けられ、これらの電子銃６
ａ、６ｂから各蒸発源８ａ、８ｂ、８ｃ、８ｄに対して
電子ビームＥＢを照射することにより各蒸着材料を蒸発
させ、基板上に蒸着を行うようになっている。On the other hand, below the evaporation chamber 2, four evaporation sources 8 (8a, 8b, 8) heated by a water-cooled copper hearth 7 are provided.
c, 8d) are provided. In the case of the present embodiment,
As the evaporation material of each of the evaporation sources 8a, 8b, 8c, 8d,
For example, MgO is used. Further, two electron guns 6a and 6b are provided below the vapor deposition chamber 2, and these electron guns 6a and 6b are provided.
Each of the evaporation sources 8a, 8b, 8c, and 8d is irradiated with an electron beam EB from each of the evaporation sources a and 6b to evaporate each evaporation material and perform evaporation on the substrate.
【００２２】ここで、電子銃６ａ、６ｂとしては、例え
ば２点ジャンピング式のピアス式電子銃が用いられ、一
方の電子銃６ａによって蒸発源８ａ、８ｂに電子ビーム
ＥＢを照射するとともに、他方の電子銃６ｂによって蒸
発源８ｃ、８ｄに電子ビームＥＢを照射するように構成
される。Here, as the electron guns 6a and 6b, for example, two-point jumping type piercing electron guns are used. The evaporation sources 8c and 8d are irradiated with the electron beam EB by the electron gun 6b.
【００２３】一方、本実施の形態においては、基板５に
付着する蒸着材料の粒子１０の入射角が所定の角度より
大きくならないように、以下のような手段が設けられて
いる。On the other hand, in the present embodiment, the following means are provided so that the incident angle of the vapor deposition material particles 10 adhering to the substrate 5 does not become larger than a predetermined angle.
【００２４】まず、図１（ａ）及び図２（ａ）に示すよ
うに、蒸着室２内の各蒸発源８ａ、８ｂ、８ｃ、８ｄの
間に衝立状の蒸着材遮蔽板９ａ、９ｂ、９ｃが設けられ
る。これらの蒸着材遮蔽板９ａ、９ｂ、９ｃは、それぞ
れ基板５の搬送方向と平行にに配置され、その上端部が
各蒸発源８ａ、８ｂ、８ｃ、８ｄより上方に位置するよ
うに構成される。そして、これらの蒸着材遮蔽板９ａ、
９ｂ、９ｃによって、各蒸発源８ａ、８ｂ、８ｃ、８ｄ
から蒸発した蒸着材料の粒子１０ａ、１０ｂ、１０ｃ、
１０ｄが遮蔽され、これらの基板５の搬送方向と直交す
る方向（図１（ａ）のｙ方向）についての出射角θ2、
即ち基板５に対する入射角θ2が所定の角度より大きい
蒸着材料の粒子１０が基板５に到達しないようになって
いる。ここで、本実施の形態の場合は、θ2は３５°で
ある。First, as shown in FIGS. 1 (a) and 2 (a), partitions of the evaporation material shielding plates 9a, 9b, 9b, 9c, 8d in the evaporation chamber 2 are provided between the evaporation sources 8a, 8b, 8c, 8d. 9c is provided. These vapor deposition material shielding plates 9a, 9b, 9c are respectively arranged in parallel to the transport direction of the substrate 5, and are configured such that the upper end thereof is located above each of the evaporation sources 8a, 8b, 8c, 8d. . And these vapor deposition material shielding plates 9a,
Each of the evaporation sources 8a, 8b, 8c, 8d
Particles 10a, 10b, 10c of the evaporation material evaporated from
10d are shielded, and the emission angles θ 2 in the direction (the y direction in FIG. 1A) orthogonal to the transport direction of these substrates 5,
That is, the particles 10 of the vapor deposition material whose incident angle θ 2 with respect to the substrate 5 is larger than the predetermined angle are prevented from reaching the substrate 5. Here, in the case of the present embodiment, θ 2 is 35 °.
【００２５】一方、両側の蒸発源８ａ、８ｄから蒸発し
た蒸着材料の粒子１０ａ、１０ｄの基板５の端部に対す
る入射角θ1 は、従来例と同様に７°となるようになっ
ている。On the other hand, the incident angle θ 1 of the particles 10a and 10d of the evaporation material evaporated from the evaporation sources 8a and 8d on both sides with respect to the end of the substrate 5 is set to 7 ° as in the conventional example.
【００２６】また、図１（ｂ）及び図２（ｂ）に示すよ
うに、各蒸発源８ａ、８ｂ、８ｃ、８ｄの基板５の搬送
方向上流側及び下流側であって、基板５の近傍には、水
平方向にそれぞれ蒸着材遮蔽板１１ａ、１１ｂが設けら
れている。そして、これらの蒸着材遮蔽板１１ａ、１１
ｂによって、各蒸発源８ａ、８ｂ、８ｃ、８ｄから蒸発
した蒸着材料の粒子１０ａ、１０ｂ、１０ｃ、１０ｄが
遮蔽され、これらの基板５の搬送方向の上流側及び下流
側の出射角θ3、即ち基板５に対する入射角θ3が所定の
角度より大きい蒸着材料の粒子１０が基板５に到達しな
いようになっている。ここで、本実施の形態の場合は、
θ2と同様、θ3は３５°である。As shown in FIGS. 1B and 2B, the upstream and downstream sides of the evaporation sources 8a, 8b, 8c and 8d in the transport direction of the substrate 5 and the vicinity of the substrate 5 Are provided with evaporation material shielding plates 11a and 11b in the horizontal direction, respectively. And these vapor deposition material shielding plates 11a, 11
b, the particles 10a, 10b, 10c, and 10d of the evaporation material evaporated from the evaporation sources 8a, 8b, 8c, and 8d are shielded, and the emission angles θ 3 on the upstream and downstream sides in the transport direction of the substrate 5 That is, the particles 10 of the vapor deposition material whose incident angle θ 3 with respect to the substrate 5 is larger than the predetermined angle are prevented from reaching the substrate 5. Here, in the case of the present embodiment,
similar to θ 2, θ 3 is 35 °.
【００２７】このような構成を有する本実施の形態にお
いて、ｘ方向に基板５を搬送しつつ各電子銃６ａ、６ｂ
から電子ビームＥＢを各蒸発源８ａ、８ｂ、８ｃ、８ｄ
に照射すると、各蒸発源８ａ、８ｂ、８ｃ、８ｄから蒸
発した蒸着材料の粒子１０ａ、１０ｂ、１０ｃ、１０ｄ
は、蒸着材遮蔽板９ａ、９ｂ、９ｃによって規制される
とともに、蒸着材遮蔽板１１ａ、１１ｂによって規制さ
れ、それぞれの基板５に対する入射角θ2、θ3が３５°
より大きくなることはない。In the present embodiment having such a configuration, each of the electron guns 6a, 6b
From the evaporation sources 8a, 8b, 8c, 8d
, The particles 10a, 10b, 10c, 10d of the evaporation material evaporated from the evaporation sources 8a, 8b, 8c, 8d
Is regulated by the vapor deposition material shielding plates 9a, 9b, 9c and regulated by the vapor deposition material shielding plates 11a, 11b, and the incident angles θ 2 , θ 3 with respect to the respective substrates 5 are 35 °.
It cannot be larger.
【００２８】その結果、本実施の形態によれば、従来技
術のような蒸着膜の結晶性の低下や膜密度の低下といっ
た問題は回避することができ、高品位の蒸着膜を形成す
ることができる。よって、本実施の形態によるＭｇＯ膜
をプラズマディスプレイパネルの保護膜として用いた場
合には、放電電圧の上昇を防止し、パネルの寿命を延ば
すことができる。As a result, according to the present embodiment, it is possible to avoid problems such as a decrease in crystallinity of a deposited film and a decrease in film density as in the prior art, and it is possible to form a high-quality deposited film. it can. Therefore, when the MgO film according to the present embodiment is used as a protective film for a plasma display panel, it is possible to prevent an increase in discharge voltage and extend the life of the panel.
【００２９】なお、本発明は上述の実施の形態に限られ
ることなく、種々の変更を行うことができる。例えば、
上述の実施の形態の場合は、各蒸発源８ａ、８ｂ、８
ｃ、８ｄの間に衝立状の蒸着材遮蔽板９ａ、９ｂ、９ｃ
を設け、また、基板５の近傍でその搬送方向上流側及び
下流側に板状の蒸着材遮蔽板１１ａ、１１ｂを設けるよ
うにしたが、本発明はこれに限られず、基板５に対する
入射角θ2及びθ3が３５°より大きくならない限り、種
々の形状、配置のものを設けることができる。It should be noted that the present invention is not limited to the above-described embodiment, and various changes can be made. For example,
In the case of the above embodiment, each of the evaporation sources 8a, 8b, 8
c, 8d, screen-shaped vapor deposition material shielding plates 9a, 9b, 9c
Further, plate-shaped deposition material shielding plates 11a and 11b are provided in the vicinity of the substrate 5 on the upstream side and the downstream side in the transport direction. However, the present invention is not limited to this. as long as 2 and the theta 3 is not greater than 35 °, it can be provided having various shapes, arrangement.
【００３０】また、上述の実施の形態においては、２点
ジャンピング方式の２台のピアス式電子銃６ａ、６ｂを
配置するようにしたが、各蒸発源８ａ、８ｂ、８ｃ、８
ｄに対応してトランスバース式の電子銃を４台配置する
ようにしてもよい。In the above-described embodiment, the two piercing electron guns 6a and 6b of the two-point jumping type are arranged, but each of the evaporation sources 8a, 8b, 8c and 8 is used.
Four transverse electron guns may be arranged corresponding to d.
【００３１】さらに、蒸発源の数も４つに限られず、こ
れより増加又は減少させることも可能であるが、その場
合には、それに応じて蒸着材遮蔽板９の数を増減させる
ことが必要である。Further, the number of evaporation sources is not limited to four, and it is possible to increase or decrease the number. However, in this case, it is necessary to increase or decrease the number of the evaporation material shielding plates 9 accordingly. It is.
【００３２】さらにまた、本発明は基板５上にＭｇＯ膜
を形成する場合のみならず、ＳiＯ2、ＴｉＯ2、Ａｌ2Ｏ
3、ＺｒＯ2、ＺｎＯ等の酸化物皮膜やＭｇＦ等の沸化物
皮膜を形成する際にも同様の効果が得られるものであ
る。Further, the present invention is applicable not only to the case where an MgO film is formed on the substrate 5 but also to the case where SiO 2 , TiO 2 , Al 2 O
3 , the same effect can be obtained when forming an oxide film such as ZrO 2 or ZnO or a boride film such as MgF.
【００３３】[0033]
【実施例】以下、本発明の実施例を比較例とともに詳細
に説明する。Hereinafter, examples of the present invention will be described in detail along with comparative examples.
【００３４】図１に示す構成を有する蒸着装置１を用
い、表１に示す条件で形成したＭｇＯ膜のＸ線回折パタ
ーンを測定した。その結果を図３及び図４に示す。ま
た、膜密度を求めるための一つの指針となる膜屈折率の
結果も図３及び図４中に示す。The X-ray diffraction pattern of the MgO film formed under the conditions shown in Table 1 was measured using the vapor deposition apparatus 1 having the structure shown in FIG. The results are shown in FIGS. 3 and 4 also show the results of the film refractive index, which is one guide for obtaining the film density.
【００３５】なお、膜評価の測定位置は、図２（ａ）
（ｂ）に示すように、基板５の中央部及び基板５の端
部の２箇所を評価した。The measurement position for the film evaluation is shown in FIG.
As shown in (b), two places, the central part of the substrate 5 and the end of the substrate 5, were evaluated.
【００３６】[0036]
【表１】 [Table 1]
【００３７】本発明に係る蒸着装置１の場合は、基板５
の搬送方向（ｘ方向）及びこれと直交する方向（ｙ方
向）の両方において蒸着材料の粒子１０の入射角θ3、
θ2を３５°までの範囲内に制限することにより、図３
及び図４に示すように、基板５の中央部、基板５の端部
の両方において蒸着膜の回折強度は大きく、しかも、
（１１１）面に優先配向していることから、結晶性の改
善がなされていることが推察される。In the case of the vapor deposition apparatus 1 according to the present invention, the substrate 5
In both the transport direction (x direction) and the direction orthogonal to this (y direction), the incident angle θ 3 of the particles 10 of the deposition material,
By limiting θ 2 to a range up to 35 °, FIG.
As shown in FIG. 4 and FIG. 4, the diffraction intensity of the deposited film is large both at the center of the substrate 5 and at the end of the substrate 5, and
Since the (111) plane is preferentially oriented, it is inferred that the crystallinity has been improved.
【００３８】さらに、本実施例の場合、屈折率は、１．
６８以上とバルクの場合の１．７０とほぼ同等の値が得
られ、膜密度は低下していないものと推察される。Further, in the case of this embodiment, the refractive index is 1.
A value of about 68 or more, which is almost the same as 1.70 in the case of bulk, was obtained, and it is assumed that the film density did not decrease.
【００３９】一方、比較例として、図８に示す構成を有
する蒸着装置を用い、上記実施例と同様の条件で形成し
たＭｇＯ膜のＸ線回折パターンと膜屈折率を測定した。
その結果を図５及び図６に示す。On the other hand, as a comparative example, an X-ray diffraction pattern and a film refractive index of an MgO film formed under the same conditions as in the above example were measured using a vapor deposition apparatus having the configuration shown in FIG.
The results are shown in FIGS.
【００４０】図５及び図６から理解されるように、従来
の蒸着装置１０１を用いて形成したＭｇＯ膜の中央部で
は、（１１１）面及び（１００）面の反射からなる回折
線ピークが得られた。それらは、比較的回折線ピーク強
度が小さく、結晶性の低い膜であることが推察される。
さらに、基板１０５の端部においては、その中央部より
も回折線強度の小さい膜となることが判明した。As can be understood from FIGS. 5 and 6, in the center of the MgO film formed by using the conventional vapor deposition apparatus 101, a diffraction line peak consisting of reflections on the (111) plane and the (100) plane is obtained. Was done. It is presumed that they are films having relatively low diffraction line peak intensity and low crystallinity.
Further, it was found that the film at the end of the substrate 105 had a smaller diffraction line intensity than the center thereof.
【００４１】一方、膜屈折率についても、バルクの場合
の１．７０に比べ１．５９と小さい値を示しており、膜
密度が低下していることが推察される。On the other hand, the refractive index of the film is 1.59 smaller than 1.70 in the case of the bulk, which suggests that the film density is lowered.
【００４２】さらに、実施例及び比較例の蒸着装置によ
ってＭｇＯ膜を形成し、その放電電圧を測定した。その
結果を図７及び図８に示す。なお、図７及び図８中、曲
線Ａ、Ｃはそれぞれ点火電圧を示し、曲線Ｂ、Ｄはそれ
ぞれ消灯電圧を示す。Further, MgO films were formed using the vapor deposition apparatuses of the examples and the comparative examples, and their discharge voltages were measured. The results are shown in FIGS. 7 and 8, curves A and C indicate ignition voltages, respectively, and curves B and D indicate light-off voltages, respectively.
【００４３】図７から明らかなように、本発明の蒸着装
置によって形成した場合は、点火放電電圧が低く、寿命
についても１０００時間以上安定して放電電圧に異常の
ないＭｇＯ膜を得ることができた。As is clear from FIG. 7, when formed by the vapor deposition apparatus of the present invention, it is possible to obtain an MgO film having a low ignition discharge voltage, a stable life of 1000 hours or more, and an abnormal discharge voltage. Was.
【００４４】一方、図８から明らかなように、従来技術
の蒸着装置によって形成したＭｇＯ膜は、点火放電電圧
が上記実施例よりも約１０Ｖ高く、かつ、長時間の放電
寿命テストで膜の劣化に起因すると思われる放電電圧の
緩やかな上昇が見られた。On the other hand, as is clear from FIG. 8, the MgO film formed by the conventional vapor deposition apparatus has an ignition discharge voltage higher by about 10 V than that of the above-described embodiment, and has a deteriorated film in a long discharge life test. A gradual rise in the discharge voltage, which is considered to be caused by the above, was observed.
【００４５】このように、基板５に対するＭｇＯ粒子の
入射角を３５°以内に制限した本実施例の蒸着装置によ
れば、点火放電電圧が低く、かつ、１０００時間以上の
寿命を有するＡＣ型ＰＤＰ用の誘電体保護膜を容易に形
成することができる。As described above, according to the vapor deposition apparatus of this embodiment in which the angle of incidence of MgO particles on the substrate 5 is limited to 35 ° or less, the AC type PDP having a low ignition discharge voltage and a life of 1000 hours or more. A dielectric protection film for use can be easily formed.
【００４６】[0046]
【発明の効果】以上述べたように本発明によれば、基板
に付着する蒸着材料の粒子の入射角が所定の角度より大
きくならないように当該粒子の入射角を規制することに
より、従来技術のような蒸着膜の結晶性の低下や膜密度
の低下といった問題を回避することができ、高品位の蒸
着膜を形成することができる。As described above, according to the present invention, the incident angle of the particles of the vapor deposition material adhering to the substrate is regulated so that the incident angle of the particles is not larger than a predetermined angle. Such problems as a decrease in crystallinity of the deposited film and a decrease in the film density can be avoided, and a high-quality deposited film can be formed.
【００４７】したがって、本発明によって形成したＭｇ
Ｏ膜をプラズマディスプレイパネルの保護膜として用い
た場合には、放電電圧の上昇を防止し、パネルの寿命を
延ばすことができる。Therefore, the Mg formed according to the present invention
When the O film is used as a protective film for a plasma display panel, it is possible to prevent an increase in discharge voltage and extend the life of the panel.
【図面の簡単な説明】[Brief description of the drawings]
【図１】（ａ）：本発明に係る蒸着装置の一実施の形態
の概略構成平面図 （ｂ）：同実施の形態の概略構成を示す側面図FIG. 1A is a schematic configuration plan view of an embodiment of a vapor deposition apparatus according to the present invention. FIG. 1B is a side view showing a schematic configuration of the embodiment.
【図２】（ａ）：本発明の作用を示すための正面説明図 （ｂ）：本発明の作用を示すための要部側面説明図FIGS. 2A and 2B are front elevational views showing the operation of the present invention, and FIGS.
【図３】本発明によって形成したＭｇＯ膜の中央部のＸ
線回折スペクトルの例FIG. 3 shows the X in the center of the MgO film formed according to the present invention.
X-ray diffraction spectrum example
【図４】本発明によって形成したＭｇＯ膜の端部のＸ線
回折スペクトルの例FIG. 4 shows an example of an X-ray diffraction spectrum of an edge of an MgO film formed according to the present invention.
【図５】従来技術によって形成したＭｇＯ膜の中央部の
Ｘ線回折スペクトルの例FIG. 5 shows an example of an X-ray diffraction spectrum of a central portion of an MgO film formed by a conventional technique.
【図６】従来技術によって形成したＭｇＯ膜の端部のＸ
線回折スペクトルの例FIG. 6 shows X at the end of an MgO film formed by a conventional technique.
X-ray diffraction spectrum example
【図７】本発明によって形成したＭｇＯ膜の放電電圧の
一例を示すグラフFIG. 7 is a graph showing an example of a discharge voltage of an MgO film formed according to the present invention.
【図８】従来技術によって形成したＭｇＯ膜の放電電圧
の一例を示すグラフFIG. 8 is a graph showing an example of a discharge voltage of an MgO film formed by a conventional technique.
【図９】（ａ）：従来例に係る蒸着装置の概略構成を示
す平面図 （ｂ）：同従来例の概略構成を示す側面図9A is a plan view illustrating a schematic configuration of a vapor deposition apparatus according to a conventional example. FIG. 9B is a side view illustrating a schematic configuration of the conventional example.
【図１０】（ａ）：従来技術の作用を示すための正面説
明図 （ｂ）：従来技術の作用を示すための要部側面説明図FIG. 10A is a front view illustrating the operation of the conventional technique. FIG. 10B is a side view illustrating a main part of the conventional technique.
１……蒸着装置 ２……蒸着室 ３、４……搬送室
５……基板 ６（６ａ、６ｂ）……電子銃 ８
(８ａ、８ｂ、８ｃ、８ｄ)……蒸発源 ９ａ、９ｂ、
９ｃ）……蒸着材遮蔽板 １０（１０ａ、１０ｂ、１
０ｃ、１０ｄ）……蒸着材料の粒子 １１ａ、１１ｂ
……蒸着材遮蔽板 ＥＢ……電子ビームDESCRIPTION OF SYMBOLS 1 ... Evaporation apparatus 2 ... Evaporation chamber 3, 4 ... Transfer chamber 5 ... Substrate 6 (6a, 6b) ... Electron gun 8
(8a, 8b, 8c, 8d) ... evaporation sources 9a, 9b,
9c)... Vapor deposition material shielding plate 10 (10a, 10b, 1)
0c, 10d) ... Particles of evaporation material 11a, 11b
...... Evaporation material shielding plate EB ... Electron beam
───────────────────────────────────────────────────── フロントページの続き (72)発明者 倉内 利春 茨城県つくば市東光台５−９−７ 日本真 空技術株式会社筑波超材料研究所内 (72)発明者 松浦 正道 茨城県つくば市東光台５−９−７ 日本真 空技術株式会社筑波超材料研究所内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Toshiharu Kurauchi 5-9-7 Tokodai, Tsukuba, Ibaraki Japan Inside Tsukuba Super Materials Research Laboratory, Japan Sky Technology Co., Ltd. (72) Masamichi Matsuura Tokodai 5, Tsukuba, Ibaraki 5 -9-7 Nippon Vacuum Technology Co., Ltd. Tsukuba Super Materials Research Laboratory
Claims (5)
着して薄膜を形成するための蒸着装置であって、 上記基体に付着する蒸着材料の粒子の入射角が所定の角
度より大きくならないように当該粒子の入射角を規制す
る入射角規制手段を設けたことを特徴とする蒸着装置。1. A vapor deposition apparatus for vapor-depositing a vapor deposition material on a substrate conveyed under vacuum to form a thin film, wherein an incident angle of particles of the vapor deposition material adhering to the substrate is larger than a predetermined angle. An evaporating apparatus comprising an incident angle regulating means for regulating an incident angle of the particles so as not to be formed.
角が所定の角度より大きい蒸着材料の粒子を遮る蒸着材
遮蔽部材を設けたことを特徴とする請求項１記載の蒸着
装置。2. The vapor deposition apparatus according to claim 1, wherein the incident angle regulating means includes a vapor deposition material shielding member for shielding particles of the vapor deposition material whose incident angle with respect to the substrate is larger than a predetermined angle.
の上流側及び下流側に蒸着材遮蔽部材を設けたことを特
徴とする請求項２記載の蒸着装置。3. The vapor deposition apparatus according to claim 2, wherein vapor deposition material shielding members are provided on the upstream side and the downstream side in the transport direction of the substrate with respect to the evaporation source of the vapor deposition material.
蒸発源を配するとともに、当該交差方向について、上記
各蒸発源についての蒸着材遮蔽部材を設けたことを特徴
とする請求項２又は３のいずれか１項記載の蒸着装置。4. A method according to claim 2, further comprising arranging a plurality of evaporation sources in a direction intersecting the transport direction of the substrate, and providing a vapor deposition material shielding member for each of the evaporation sources in the intersection direction. Or the vapor deposition device according to any one of 3.
ｇＯの粒子の入射角が３５度より大きくならないように
当該粒子の入射角を規制することを特徴とする請求項１
乃至４のいずれか１項記載の蒸着装置。5. The method according to claim 1, wherein the deposition material is MgO, and M
2. The method according to claim 1, wherein the incident angle of the particles of gO is regulated so that the incident angle of the particles is not larger than 35 degrees.
The vapor deposition apparatus according to any one of claims 1 to 4.
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|---|---|---|---|
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35352396A JP3847871B2 (en) | 1996-12-17 | 1996-12-17 | Vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10176262A true JPH10176262A (en) | 1998-06-30 |
| JP3847871B2 JP3847871B2 (en) | 2006-11-22 |
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ID=18431419
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|---|---|---|---|
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-
1996
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Cited By (12)
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| JP2002083546A (en) * | 2000-09-08 | 2002-03-22 | Matsushita Electric Ind Co Ltd | Plasma display device and its manufacturing method |
| JP4626035B2 (en) * | 2000-09-08 | 2011-02-02 | パナソニック株式会社 | Method for manufacturing plasma display device |
| JP2002129311A (en) * | 2000-10-20 | 2002-05-09 | Ulvac Japan Ltd | Apparatus and method of forming protection coating for plasma display |
| JP4570232B2 (en) * | 2000-10-20 | 2010-10-27 | 株式会社アルバック | Plasma display protective film forming apparatus and protective film forming method |
| JP2008261058A (en) * | 2001-02-08 | 2008-10-30 | Semiconductor Energy Lab Co Ltd | Film deposition apparatus and method for manufacturing light-emitting apparatus |
| JP2007227359A (en) * | 2006-01-27 | 2007-09-06 | Canon Inc | Vapor deposition device and deposition method |
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| JP2012097338A (en) * | 2010-11-04 | 2012-05-24 | Kaneka Corp | Deposition apparatus and manufacturing method of organic el apparatus |
| JP2012233214A (en) * | 2011-04-28 | 2012-11-29 | Ulvac Japan Ltd | Electron beam vapor deposition apparatus |
| KR101191750B1 (en) | 2011-06-20 | 2012-10-16 | 주식회사 선익시스템 | Apparatus for depositing thin film using at least two vaporization sources |
| CN103094486A (en) * | 2011-10-28 | 2013-05-08 | 乐金显示有限公司 | Light-emitting Diode And Deposition Apparatus For Fabricating The Same |
| CN103094486B (en) * | 2011-10-28 | 2016-08-17 | 乐金显示有限公司 | Light emitting diode and the precipitation equipment of this light emitting diode of manufacture |
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