WO2013111600A1

WO2013111600A1 - Organic electroluminescent element manufacturing apparatus and organic electroluminescent element manufacturing method

Info

Publication number: WO2013111600A1
Application number: PCT/JP2013/000375
Authority: WO
Inventors: 一樹北村
Original assignee: パナソニック株式会社
Priority date: 2012-01-27
Filing date: 2013-01-25
Publication date: 2013-08-01
Also published as: KR20140107501A; CN104066866A; JPWO2013111600A1; TW201332181A

Abstract

[Problem] To provide an apparatus for manufacturing organic electroluminescent elements having a more uniform luminance. [Solution] The present invention pertains to an organic electroluminescent element manufacturing apparatus that forms an organic layer (13) by sequentially laminating, by means of vapor deposition, thin-film layers (6) from a plurality of vapor deposition units (1) on vapor deposition target bodies (10) being conveyed. Each vapor deposition unit (1) is provided with an evaporation source (2) that emits a vapor deposition material for forming the thin-film layers (6), and a cylindrical body (3) that discharges the vapor deposition material emitted from the evaporation source (2) toward a deposition target body (10). The cylindrical body has an opening through which the vapor deposition material is discharged. The opening adjustably forms a discharge amount distribution of the vapor deposition material using a discharge amount regulating structure. The plurality of vapor deposition units (1) each have a convex distribution vapor deposition unit (1a) in which the film thickness distribution of the thin-film layers (6) regulated by the discharge amount regulating structure (50) takes on a convex form, and a concave distribution vapor deposition unit (1b) in which the film thickness distribution of the thin-film layers (6) regulated by the discharge amount regulating structure (50) takes on a concave shape. Luminance can be made more uniform by bringing the thickness of laminated bodies formed by vapor deposition uniformly close.

Description

Organic electroluminescence device manufacturing apparatus and organic electroluminescence device manufacturing method

The present invention relates to an apparatus for producing an organic electroluminescence element and a method for producing an organic electroluminescence element using the apparatus.

Conventionally, it is known to manufacture an organic electroluminescence element (hereinafter also referred to as “organic EL element”) by transporting a substrate to a line, sequentially depositing and laminating thin films on the surface of the substrate as a deposition target. Yes. For example, Patent Document 1 includes a plurality of processing chambers that can independently control the atmosphere and the degree of vacuum, and a transport unit that continuously transports the substrate to the plurality of processing chambers. An apparatus for manufacturing an organic electroluminescent element by performing a predetermined treatment is disclosed. With such an in-line manufacturing apparatus, organic thin films can be sequentially stacked, so that the manufacturing efficiency of the organic EL element is improved.

JP 2005-285576 A

In the conventional transport type (in-line type) organic EL element manufacturing apparatus, the vapor deposition material is deposited with an amount distribution that is large at the center and small at the end, so that the film may be formed with a convex cross-sectional shape. is there.

FIG. 16 is an example of an organic EL element A manufactured by a conventional organic EL element manufacturing apparatus. In this organic EL element A, a first electrode 12 serving as an anode is formed on the surface of a substrate 11, and an organic layer 13 and a second electrode 14 serving as a cathode are laminated on the surface. In this embodiment, the organic layer 13 is laminated in the order of the hole transport layer 13a, the light emitting layer 13b, the electron transport layer 13c, the intermediate layer 13d, the hole transport layer 13e, the light emitting layer 13f, and the electron transport layer 13g from the substrate 11 side. Each of these layers is formed by vapor deposition. The second electrode 14 is formed by evaporating an electrode material on the surface of the electron transport layer 13g. In each of the deposited layers, the deposition material is stacked more at the center portion than at the end portions (both side portions). Therefore, the thickness of the convex shape becomes thicker at the center portion and thinner toward the side portions. Distribution. Therefore, also in the whole organic layer 13 formed by vapor deposition, the thickness is increased at the central portion and the thickness is decreased at both side portions, so that a convex thickness distribution is formed.

As described above, when the organic layer 13 composed of the laminate is thick at the center and thin at the side, there is a problem in that the light emission luminance is different between the center of the substrate and the end of the substrate. That is, light is often extracted to the outside of the element by using interference, and if the film thickness is different between the central portion and the side portion, the degree of interference will be different, and the light emission luminance is likely to be biased. In particular, in a light-emitting panel that emits light in a relatively large area, the uniformity of in-plane light emission is lowered, and the function as a light emitter may be impaired.

In order to make the thickness of the laminated body uniform, the amount of vapor deposition material constituting each layer of the organic layer 13 is controlled to be a distribution that is constant at the side portion and the central portion, and a layer having a uniform thickness is deposited by vapor deposition. Lamination is also conceivable. However, it is difficult to form a layer with a constant deposition amount over the entire deposition area for the object to be transported, and it is difficult to control the thickness of all the layers to be constant. On the contrary, there is a possibility that the production efficiency is deteriorated.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an apparatus for producing an organic electroluminescence element having more uniform light emission luminance. Moreover, it aims at providing the method of manufacturing an organic electroluminescent element with more uniform luminescent brightness.

The organic electroluminescence element manufacturing apparatus according to the present invention is an organic electroluminescence element manufacturing apparatus for forming an organic layer by sequentially laminating a thin film layer from a plurality of vapor deposition units on a transported deposition target, Each of the plurality of vapor deposition units includes a vapor deposition source that radiates a vapor deposition material for forming the thin film layer, and the vapor deposition material that is heated to a temperature at which the vapor deposition material is vaporized and radiated from the vapor deposition source. And a cylindrical body that discharges the vapor deposition material toward the deposition target body, and the cylindrical body has an opening that discharges the vapor deposition material. The plurality of vapor deposition units formed so as to be adjustable, and a convex distribution vapor deposition unit in which the film thickness distribution of the thin film layer adjusted by the discharge amount adjustment structure becomes a convex shape, Film thickness distribution of the thin film layer which is adjusted by the serial emission amount adjustment structure is characterized in that it has a concave profile evaporation unit becomes concave.

In the present invention, the discharge amount adjusting structure includes a discharge amount adjusting plate, and the discharge amount adjusting plate is heated to a temperature at which the vapor deposition material is vaporized to partially block the opening and It is preferable to adjust the discharge amount distribution of the vapor deposition material from the opening.

In the present invention, it is preferable that the blocking area of the discharge amount adjusting plate in the convex distributed vapor deposition unit is different from the blocking area of the discharge amount adjusting plate in the concave distributed vapor deposition unit.

In a preferred embodiment, the discharge amount adjusting plate has an outer edge formed in an arc shape and protrudes along a direction parallel to the transport direction of the deposition target to partially block the opening, and the convex shape The length in the carrying direction of the blocking region by the discharge amount adjusting plate in the concave distributed vapor deposition unit is longer than the length in the carrying direction of the blocking region by the discharge amount adjusting plate in the distributed vapor deposition unit.

In a preferred embodiment, the discharge amount adjusting plate has an outer edge formed in an arc shape and protrudes along a direction parallel to the transport direction of the deposition target to partially block the opening, and the convex shape The length in the direction perpendicular to the transport direction of the blocking region by the discharge amount adjusting plate in the concave distributed deposition unit is longer than the length in the direction perpendicular to the transport direction of the blocking region by the discharge amount adjusting plate in the distributed deposition unit. Is short.

In a preferred embodiment, the discharge amount adjusting plate is partially cut out so that the outer edge has an arc shape and projects along a direction parallel to the transport direction of the deposition target, so that the opening is partially formed. The circular radius by the discharge amount adjusting plate in the concave distributed vapor deposition unit is smaller than the circular radius by the discharge amount adjusting plate in the convex distributed vapor deposition unit.

In a preferred embodiment, the discharge amount adjusting plate has a trapezoidal shape and protrudes along a direction parallel to the transport direction of the deposition target, partially blocking the opening, and the convex distributed deposition. The length in the transport direction of the blocking region by the discharge amount adjusting plate in the concave distributed vapor deposition unit is longer than the length in the transport direction of the blocking region by the discharge amount adjusting plate in the unit.

In a preferred embodiment, the discharge amount adjusting plate has a trapezoidal shape and protrudes along a direction parallel to the transport direction of the deposition target, partially blocking the opening, and the convex distributed deposition. The length in the direction perpendicular to the carrying direction of the blocking region by the discharge amount adjusting plate in the concave distributed vapor deposition unit is shorter than the length in the direction perpendicular to the carrying direction of the blocking region by the discharge amount adjusting plate in the unit. .

In a preferred embodiment, the discharge amount adjusting plate has a trapezoidal shape and protrudes along a direction parallel to the transport direction of the deposition target, partially blocking the opening, and the convex distributed deposition. The blocking ratio at the central portion of the opening by the discharge amount adjusting plate in the concave distributed vapor deposition unit is larger than the blocking ratio at the central portion of the opening by the discharge amount adjusting plate in the unit.

In the present invention, the discharge amount adjusting structure is formed by a side wall of the cylindrical body, and the side wall is formed by changing the shape of the opening in plan view, thereby releasing the deposition material from the opening. It is preferable to adjust the distribution.

In the present invention, it is preferable that the side wall protrudes along a direction parallel to the transport direction of the vapor-deposited body, thereby deforming the planar view shape of the opening.

In the organic electroluminescence element manufacturing apparatus, it is preferable that the shape of the emission amount adjusting structure in the plurality of vapor deposition units has variability.

The method for producing an organic electroluminescence element according to the present invention is characterized in that an organic electroluminescence element is produced using the above-described organic electroluminescence element production apparatus.

According to the present invention, since the thickness of the laminated body laminated by vapor deposition can be made close to uniform, it is possible to produce an organic electroluminescence element with more uniform light emission luminance.

It is a perspective view which shows an example of embodiment of an organic electroluminescent element manufacturing apparatus. It is a top view which shows an example of the opening part of a vapor deposition unit. 3A and 3B are plan views showing an example of the opening of the vapor deposition unit. It is a top view explaining interruption | blocking of the opening part of a vapor deposition unit. It is a top view which shows an example of the opening part of a vapor deposition unit. 6A and 6B are plan views showing an example of the opening of the vapor deposition unit. 7A and 7B are plan views showing an example of the opening of the vapor deposition unit. 8A, 8B, 8C, and 8D are cross-sectional views illustrating an example of a thin film layer. It is sectional drawing which shows an example of an organic electroluminescent element. It is a perspective view which shows an example of other embodiment of an organic electroluminescent element manufacturing apparatus. It is a top view which shows an example of the opening part of another vapor deposition unit. 12A and 12B are plan views showing an example of an opening of another vapor deposition unit. It is a top view explaining interruption | blocking of the opening part of another vapor deposition unit. It is a top view which shows an example of the opening part of another vapor deposition unit. 15A and 15B are plan views illustrating an example of an opening of another vapor deposition unit. It is sectional drawing which shows an example of the conventional organic electroluminescent element.

1 and 2 show an example of an organic electroluminescence element manufacturing apparatus (hereinafter also referred to as “organic EL manufacturing apparatus”). This organic EL manufacturing apparatus forms an organic layer 13 by sequentially laminating thin film layers 6 (see FIGS. 8 and 9) from a plurality of vapor deposition units 1 on a transported deposition target (work) 10 by vapor deposition. Thus, an organic electroluminescence element (organic EL element) is manufactured. FIG. 1 illustrates a state in which three vapor deposition units 1 are sequentially arranged from the upstream side to the downstream side in the conveyance direction (white arrow) X of the deposition target 10. It may be the above. For example, the same number of vapor deposition units 1 as the number of thin film layers 6 formed by vapor deposition can be used. In addition, the vapor deposition unit 1 needs to be two or more.

Each of the vapor deposition units 1 in the plurality of vapor deposition units 1 includes a vapor deposition source 2 that radiates a vapor deposition material for forming the thin film layer 6, and a vapor deposition material that is heated to a temperature at which the vapor deposition material is vaporized and emitted from the vapor deposition source 2. And a cylindrical body 3 that discharges toward the deposition target body 10. The cylindrical body 3 is formed in a vertical cylindrical shape having a cavity with a rectangular cross section, and is connected to the vapor deposition source 2 at the lower part and has an opening part 4 for discharging vaporized vapor deposition material upward at the upper part. Is provided. If the vapor deposition material is discharged toward the vapor deposition target 10 by the cylindrical body 3 in this way, the thin film layer 6 can be laminated on the vapor deposition target 10. Further, since the cylindrical body 3 is heated at a temperature equal to or higher than the vaporization temperature of the vapor deposition material, the vapor deposition material can be discharged from the opening 4 without adhering to the inside of the cylindrical body 3. The cylindrical body 3 can be made of metal. The vapor deposition may be vacuum vapor deposition. In FIG. 1, the release of the vapor deposition material is indicated by black arrows.

The cylindrical body 3 can be formed in a square cylindrical shape having four side walls 30. The side wall 30 includes a pair of first side walls 30a and a pair of second side walls 30b. Each first side wall 30a has a flat plate shape. In addition, the direction in which the pair of first side walls 30a oppose is a direction parallel to the transport direction X. Each second side wall 30b has a flat plate shape. The direction in which the pair of second side walls 30b oppose is a direction perpendicular to the transport direction X. The cylindrical body 3 has a hot wall structure in which the side wall 30 is heated at a temperature equal to or higher than the vaporization temperature of the vapor deposition material.

As shown in FIG. 2, in this embodiment, the opening 4 is formed in a rectangular shape in which a short side is disposed in parallel with the transport direction X and a long side is disposed in parallel with a direction perpendicular to the transport direction X. Has been. Thereby, the thin film layer 6 can be formed with a more uniform film thickness on the surface of the vapor-deposited body 10 to be conveyed. The short side of the opening 4 is formed by the upper edge of the second side wall 30b. The long side of the opening 4 is formed by the upper edge of the first side wall 30a.

Each vapor deposition unit 1 includes a discharge amount adjustment structure 50 that adjusts the discharge amount distribution of the vapor deposition material from the cylindrical body 3. That is, each vapor deposition unit 1 includes a discharge amount adjustment plate 5 as the discharge amount adjustment structure 50. The discharge amount adjusting plate 5 blocks (closes) a part of the opening 4 of the cylindrical body 3. That is, the discharge amount adjusting plate 5 partially blocks the opening 4 of the cylindrical body 3 to adjust the discharge amount distribution of the vapor deposition material from the cylindrical body 3. The discharge amount adjusting plate 5 is heated to a temperature at which the vapor deposition material is vaporized. Since the discharge amount adjusting plate 5 is heated at a temperature equal to or higher than the vaporization temperature of the vapor deposition material, the vapor deposition material can be discharged from the opening 4 without adhering to the discharge amount adjusting plate 5. The temperature of the discharge amount adjusting plate 5 may be the same as that of the cylindrical body 3 or may be different. In addition, if the cylindrical body 3 and the discharge amount adjusting plate 5 are connected with heat transfer properties and the discharge amount adjusting plate 5 can be heated by heating the cylindrical body 3, the heating mechanism can be simplified. can do. The discharge amount adjusting plate 5 can be made of metal.

In the vapor deposition unit 1, the discharge amount adjusting plate 5 is provided at the upper end of the second side wall 30 b of the cylindrical body 3 to partially block the opening 4 having a rectangular shape in plan view. That is, a region other than the blocking region S of the opening 4 by the discharge amount adjusting plate 5 is formed as a discharge region H from which the vapor deposition material is discharged. Therefore, the planar view shape of the discharge region H of the cylindrical body 3 can be deformed by the shape of the discharge amount adjusting plate 5 and the like, and thereby the discharge distribution of the vapor deposition material from the discharge region H can be adjusted. That is, in the vapor deposition unit 1, by providing the discharge amount adjusting plate 5, the discharge distribution of the vapor deposition material can be easily adjusted and the distribution of the vapor deposition amount can be adjusted. That is, in the case where the vapor deposition unit 1 in which the entire rectangular opening 4 having no discharge amount adjusting plate 5 is opened is used, a large amount of vapor deposition material is released in the central portion in the direction perpendicular to the transport direction X (width direction). At the same time, a small amount of vapor deposition material is released to the side portion in the width direction. Then, the thin film layer 6 is formed in a convex shape in which the film thickness distribution protrudes extremely, and becomes a layer in which the central portion protrudes greatly. Although it is conceivable to change the shape of the opening of the cylindrical body 3 itself in order to bring the deposition amount between the central portion and the side portion closer, there is a possibility that the apparatus configuration becomes complicated. However, if the discharge amount adjusting plate 5 is provided, the distribution of the film thickness can be easily adjusted by adjusting the state of blocking by the discharge amount adjusting plate 5, and vapor deposition between the central portion and the side portion. The amount can be close.

In this embodiment, in each vapor deposition unit 1, a pair of two discharge amount adjustment plates 5 are arranged along a direction parallel to the transport direction X. That is, an upstream discharge amount adjusting plate 5a is disposed on the upstream side in the transport direction X, and a downstream discharge amount adjusting plate 5b is disposed on the downstream side in the transport direction X. The upstream discharge amount adjusting plate 5 a protrudes from the upstream edge of the opening 4 toward the downstream side, and blocks a part of the upstream side of the opening 4. Further, the downstream discharge amount adjusting plate 5 b protrudes from the downstream edge of the opening 4 toward the upstream side and blocks a part of the downstream side of the opening 4. The degree of partial blockage of the opening 4 by the discharge amount adjusting plate 5 increases as it goes from the side in the width direction to the center. By providing such a discharge amount adjusting plate 5, it is possible to bring the deposition amount on the deposition target 10 closer to a value closer to the central portion and the side portion.

The organic EL manufacturing apparatus includes transport means 20 for transporting the deposition target 10. The transport means 20 is configured by an appropriate transport mechanism such as a conveyor, whereby the deposition target 10 sequentially passes above the respective vapor deposition units 1 from the upstream side to the downstream side in the transport direction X along the line. Can do. As the conveying means 20, a supporting member that supports the end of the vapor deposition body 10 in the width direction and conveys the entire supporting member so that the lower surface of the vapor deposition body 10 is exposed to the outside is used. Can do. Since the lower surface of the body to be vapor-deposited 10 is exposed, the thin film layer 6 can be formed by vapor-depositing the vapor deposition material released from the cylindrical body 3 on this surface. The vapor-deposited body 10 includes at least the substrate 11. For example, the substrate 11 on which the first electrode 12 is formed can be used. Moreover, the board | substrate 11 with which the 1st electrode 12 and the one part layer of the organic layer 13 were formed in the surface can also be used. And the to-be-deposited body 10 can be comprised by setting the board | substrate 11 to a suitable supporting member with the 1st electrode 12 facing down. In addition, the conveyance means 20 may be configured by a conveyor such as a roller or a belt disposed at each end in the width direction, and the end in the width direction of the substrate 1 may be placed on the conveyor and conveyed. In vapor deposition, a mask may be stacked on the lower surface of the vapor-deposited body 10. Thereby, it can be made not to vapor-deposit on the outer peripheral part of the to-be-deposited body 10, or the thin film layer 6 can be laminated | stacked by a suitable pattern.

In the organic EL manufacturing apparatus, the thin film layer 6 is sequentially formed by the vapor deposition unit 1 in which the discharge amount adjusting plate 5 is provided in the opening 4. A part of the opening 4 is blocked by the discharge amount adjusting plate 5. Even so, it is difficult to stack the vapor deposition material with a certain thickness from the central part to the side part in the width direction for each single thin film layer 6. In particular, it is difficult to make all the thin film layers 6 constituting the organic layer 3 uniform in thickness in the width direction. Therefore, in this embodiment, in the plurality of vapor deposition units 1, the distribution of the discharge amount is adjusted by changing the partial blocking state of the opening 4 by the discharge amount adjusting plate 5, and the thickness of the entire stacked body is made more uniform. is there. Note that, even when the discharge amount adjusting plate 5 is provided, when the ratio of blocking the opening 4 is small, the thin film layer 6 is usually formed with a convex film thickness distribution, so that the organic layer as shown in FIG. The EL element A is manufactured.

In this embodiment, the plurality of vapor deposition units 1 are convex distribution vapor deposition units 1a (hereinafter, simply referred to as “unit 1a”) in which the film thickness distribution of the thin film layer 6 adjusted by the discharge amount adjusting plate 5 is convex. And a concave distributed vapor deposition unit 1b (hereinafter simply referred to as “unit 1b”) in which the film thickness distribution of the thin film layer 6 adjusted by the discharge amount adjusting plate 5 is concave. That is, a part of the plurality of vapor deposition units 1 is the unit 1a, and the whole or a part of the remaining part is the unit 1b. As a result, the thin film layer 6 having a convex thickness distribution (convex thin film layer 6a) and the thin film layer having a concave thickness distribution (concave thin film layer 6b) are laminated, and thus formed by vapor deposition. It is possible to make the distribution of the thickness of the entire laminate close to a constant value. And when the thickness of the center part in the organic layer 13 which is a laminated body and the thickness of a side part approach constant, the light emission luminance of a center part and a side part will approach the same grade more. That is, light is often extracted to the outside of the element using interference, and when the film thickness is substantially the same at the central part and the side part of the organic layer 13, the degree of interference becomes substantially the same, and the light emission luminance Approaches constant over the entire surface. Thereby, an organic EL element with more uniform in-plane light emission can be manufactured. In addition to the

units

1a and 1b, the plurality of vapor deposition units 1 may include a flat distribution vapor deposition unit having a flat film thickness distribution. Moreover, the high temperature vapor deposition unit may be arrange | positioned between the row | line | columns where the unit 1a and the unit 1b are located in a line. The high temperature vapor deposition unit is a unit for vapor deposition at a higher vapor deposition temperature than the vapor deposition on a hot wall such as the unit 1a and the unit 1b. When the vapor deposition temperature is high, such as metal, high temperature vapor deposition unit is suitable because vapor deposition on a hot wall is not possible. For example, a high-temperature vapor deposition unit can be used for vapor deposition of a metal such as Al used for the cathode or a metal-containing layer (Mg, ITO, MoO ₃ , Li ₂ MoO _3, etc.) in the organic layer 13. The thin film layer 6 formed by the high temperature vapor deposition unit may have a uniform thickness distribution in the width direction, or may be convex or concave.

FIG. 8 shows an example of the thin film layer 6. FIG. 8A is an example of the convex thin film layer 6a formed by the unit 1a. In the convex thin film layer 6a, the thickness gradually increases as it approaches the central portion from both side portions, and the central portion protrudes in the thickness direction. Thus, the unit 1a forms a layer having a convex film thickness distribution when the thin film layer 6 is formed on a flat surface. FIG. 8B is an example of the concave thin film layer 6b formed by the unit 1b. In the concave thin film layer 6b, the thickness is gradually reduced from the both sides toward the center, and the center is recessed in the thickness direction. Thus, the unit 1b forms a layer having a concave thickness distribution when the thin film layer 6 is formed on a flat surface.

Here, the unit 1b should just form the thin film layer 6 by the film thickness distribution which has a recessed part which thickness became small as it approached the center part from the side part. In vapor deposition by the vapor deposition unit 1, the amount of vapor deposition may decrease at the edge of the opening 4. In this case, the thickness of the thin film layer 6 may be reduced at the side edge as shown in FIG. Since such a thin film layer 6 also has a recess at the center, it becomes a concave thin film layer 6b. Further, when the area to be stacked increases, the blocking effect at the central portion by the discharge amount adjusting plate 5 decreases, and in this case, as shown in FIG. 8D, the thickness of the thin film layer 6 may increase at the central portion. Since the thin film layer 6 also has a recess in the vicinity of the center, it becomes a concave thin film layer 6b. However, in the case of FIG. 8D, the thickness of the portion protruding at the center is preferably smaller than the thickness of the portion protruding at the side.

In order to form the convex thin film layer 6a and the concave thin film layer 6b, it is preferable that the blocking area of the discharge amount adjusting plate 5 in the unit 1a is different from the blocking area of the discharge amount adjusting plate 5 in the unit 1b. . Thereby, the thin film layer 6 can be easily formed in a convex shape or a concave shape. For example, the blocking area of the discharge amount adjusting plate 5 in the unit 1b is made larger than the blocking area of the discharge amount adjusting plate 5 in the unit 1a, and the discharge of the vapor deposition material is blocked from the side portion in the central portion, so that the deposition amount is reduced. Try to reduce it. Then, the vapor deposition material can be laminated with a concave film thickness distribution to form the concave thin film layer 6b.

In the form of FIG. 2, the film thickness distribution of the thin film layer 6 can be easily made convex or concave by the partial disk type discharge amount adjusting plate 5 disposed in the opening 4 of the cylindrical body 3. In this embodiment, the discharge amount adjusting plate 5 in the plurality of vapor deposition units 1 has an outer edge formed in an arc shape and protrudes along a direction parallel to the transport direction X to block the opening 4. By forming the outer edge to be blocked into an arc shape, the film thickness distribution can be smoothly changed from the side to the center. In the blocking structure of FIG. 2, the outer edge of the discharge amount adjusting plate 5 having an arc shape is a curved curve passing through the

corner portions

4 a and 4 a arranged in the width direction in the rectangular opening 4. This curve may be part of a circle or part of an ellipse. By using the discharge amount adjusting plate 5 whose outer edge is arcuate, the blocking area of the opening 5 by the discharge amount adjusting plate 5 can be easily changed for each vapor deposition unit 1, and the discharge amount distribution of the vapor deposition material Can be controlled.

Further, in the form of FIG. 2, at least one of the length L1 in the transport direction X and the length L2 perpendicular to the transport direction X of the blocking region S by the discharge amount adjusting plate 5 is made different among the plurality of vapor deposition units 1. The blocking state of the opening 4 can be changed. Of course, both the lengths L1 and L2 may be different.

Referring to FIG. 3, the change in the blocking state by the discharge amount adjusting plate 5 will be described. As shown in FIG. 2 and FIG. 3A, for example, by changing the length L1 in the transport direction X of the blocking area S by the discharge amount adjusting plate 5 between the unit 1a and the unit 1b, the blocking state of the opening 4 is changed. Can be changed. In this case, the blocking area can be easily changed. That is, the length L1 in the transport direction X of the blocking region S by the discharge amount adjusting plate 5 in the unit 1b is longer than the length L1 in the transport direction X of the blocking region S by the discharge amount adjusting plate 5 in the unit 1a. . At this time, the form of FIG. 2 shows the opening 4 of the unit 1b, and the form of FIG. 3A shows the opening 4 of the unit 1a. In the form of FIG. 3A, the opening length in the transport direction X is longer than that in FIG. In the central portion of the opening 4, more vapor deposition material is released, and the thin film layer 6 can be formed thick, so that a convex thickness distribution as shown in FIG. 8A can be formed. On the other hand, in the form of FIG. 2, the central part in the width direction of the opening 4 has a shorter opening length in the transport direction X than the form of FIG. The amount is reduced, the thin film layer 6 can be formed thin, and a concave thickness distribution as shown in FIG. 8B or the like can be formed. In this way, by changing the length L1 of the blocking region S in the transport direction X by the discharge amount adjusting plate 5, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape. It is.

Further, as shown in FIGS. 2 and 3B, the unit 1a and the unit 1b have different lengths L2 in the direction (width direction) perpendicular to the transport direction X of the blocking region S by the discharge amount adjusting plate 5. Also, the blocking state of the opening 4 can be changed. In this case, the blocking area can be easily changed. That is, the length L2 in the width direction of the blocking region S by the discharge amount adjusting plate 5 in the unit 1b is shorter than the length L2 in the width direction of the blocking region S by the discharge amount adjusting plate 5 in the unit 1a. At this time, the form of FIG. 2 shows the opening 4 of the unit 1a, and the form of FIG. 3B shows the opening 4 of the unit 1b. In the form of FIG. 3B, the opening area is larger than that of FIG. 2 at the side of the opening 4 in the width direction. Then, at the side of the opening 4, more vapor deposition material is released, so that the thin film layer 6 can be formed thick, and a concave film thickness distribution as shown in FIG. 8B or the like can be formed. On the other hand, in the form of FIG. 2, since the opening area of the side part in the width direction of the opening part 4 is smaller than that of the form of FIG. 3B, the emission amount of the vapor deposition material is reduced at the side part of the opening part 4, The thin film layer 6 can be formed thin to form a convex thickness distribution as shown in FIG. 8A. Thus, by changing the length L2 of the blocking region S in the width direction by the discharge amount adjusting plate 5, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape. is there. 3B, the intersection of the outer edge of the arc of the blocking area S and the edge of the opening 4 is arranged inside the corner 4a.

In addition, in the form of FIG. 2, the discharge amount adjusting plate 5 is formed when a part of a circle is cut out and the outer edge has an arc shape and projects along a direction parallel to the transport direction X to block the opening 4. May vary the circular radius R drawn by the discharge amount adjusting plate 5 shown in FIG. That is, the circular radius R by the discharge amount adjusting plate 5 in the unit 1a is made different from the circular radius by the discharge amount adjusting plate 5 in the unit 1b. Thereby, the interruption | blocking state of the opening part 4 can be changed. In this case, the blocking area can be easily changed. For example, the circular radius R by the discharge amount adjusting plate 5 in the unit 1b is made smaller than the circular radius R by the discharge amount adjusting plate 5 in the unit 1a. Then, in the unit 1a, the distance between the outer edge and the center of the circle becomes shorter, the radius of curvature (R) drawn by the outer edge becomes smaller, and the blocking region protrudes more. In the portion, the opening ratio is smaller than that of the unit 1a. In the unit 1b, in the central portion of the opening 4, the amount of the vapor deposition material released is reduced, the thin film layer 6 is formed thin, and a concave thickness distribution as shown in FIG. 8B or the like is formed. it can. On the other hand, in the unit 1a, since the protrusion of the blocking region S is small, the opening ratio is larger in the central part of the opening 4 than in the unit 1b. Will increase. Therefore, the thin film layer 6 can be formed thick and a convex thickness distribution as shown in FIG. 8A can be formed. Thus, by changing the radius R of the discharge amount adjusting plate 5, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape. When the radius R is changed, the outer edge of the blocking region S by each discharge amount adjusting plate 5 can pass through the

corners

4 a and 4 a of the opening 4.

When the outer edge of the blocking region S by the discharge amount adjusting plate 5 is a part of an ellipse cut out, the length of the ellipse minor axis (minor axis) or the length of the major axis (major axis) Is changed in the same manner as in the case of the radius R of the circle, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape. Also, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape by changing the ratio of the major axis to the minor axis length of the ellipse.

FIG. 5 shows another example of the discharge amount adjusting plate 5. In this embodiment, the discharge amount adjusting plate 5 is trapezoidal and protrudes along a direction parallel to the transport direction X to block the opening 5. As the blocking region S becomes trapezoidal, the amount of the vapor deposition material released in the side portion is reduced toward the center portion, and the amount of the vapor deposition material emission is not reduced too much in the center portion. A thin film layer 6 can be formed.

2, in each vapor deposition unit 1, a pair of two discharge amount adjustment plates 5 are arranged along a direction parallel to the transport direction X. That is, an upstream discharge amount adjusting plate 5a is disposed on the upstream side in the transport direction, and a downstream discharge amount adjusting plate 5b is disposed on the downstream side in the transport direction X. The upstream discharge amount adjusting plate 5 a protrudes from the upstream edge of the opening 4 toward the downstream side, and blocks the upstream side of the opening 4. The downstream discharge amount adjusting plate 5 b protrudes from the downstream edge of the opening 4 toward the upstream side, and blocks the downstream side of the opening 4. The degree of blocking of the opening 4 by the discharge amount adjusting plate 5 is greater at the center than at the side in the width direction. By providing such a discharge amount adjusting plate 5, it is possible to bring the deposition amount on the deposition target 10 closer to a value closer to the central portion and the side portion.

In the blocking structure of FIG. 5, the lower side of the trapezoid of the blocking area S formed by the discharge amount adjusting plate 5 is equal to the line segment formed by the

corners

4 a and 4 a in the width direction in the rectangular opening 4. Yes. By using the discharge amount adjusting plate 5 having such a blocking region S having a trapezoidal shape, the blocking state of the opening 4 by the discharge amount adjusting plate 5 can be easily changed for each vapor deposition unit 1. Controlled release distribution.

In the form of FIG. 5, the film thickness distribution of the thin film layer 6 is made different from the area of the blocking region S by the discharge amount adjusting plate 5 in the unit 1a and the area of the blocking region S by the discharge amount adjusting plate 5 in the unit 1b. Can be adjusted to a convex shape or a concave shape. Further, even if the area of the blocking region S is the same, if the trapezoidal shape is changed so that the ratio of the blocking region S in the central portion is changed, the film thickness distribution of the thin film layer 6 is convex or concave. Can be adjusted. That is, since the blocking region S has a trapezoidal shape, if the blocking ratio at the central portion due to this trapezoid is increased, the amount of vapor deposition material released in the vicinity of the central portion can be easily reduced, and the film thickness distribution is concave. Can be.

Specifically, the opening 4 is blocked by making at least one of the length L1 in the transport direction and the length L2 perpendicular to the transport direction of the blocking region S by the discharge amount adjusting plate 5 different in the plurality of vapor deposition units 1. The state can be changed. Of course, both the lengths L1 and L2 may be different. In this embodiment, since the blocking area S by the discharge amount adjusting plate 5 is trapezoidal, the length L1 is the height of the trapezoid, and the length L2 is the length of the lower side of the trapezoid.

Referring to FIG. 6, the change in the blocking state by the discharge amount adjusting plate 5 will be described. As shown in FIGS. 5 and 6A, for example, the blocking state of the opening 4 is changed by changing the length L1 of the blocking region S in the transport direction by the discharge amount adjusting plate 5 between the unit 1a and the unit 1b. Can be made. In this case, the blocking area can be easily changed. That is, the length L1 in the transport direction X of the blocking region S by the discharge amount adjusting plate 5 in the unit 1b is longer than the length L1 in the transport direction X of the blocking region S by the discharge amount adjusting plate 5 in the unit 1a. . At this time, the form of FIG. 5 shows the opening 4 of the unit 1b, and the form of FIG. 6A shows the opening 4 of the unit 1a. In the form of FIG. 6A, the opening length in the conveyance direction X is longer than that in FIG. In the central portion of the opening 4, more vapor deposition material is released, and the thin film layer 6 can be formed thick, so that a convex thickness distribution as shown in FIG. 8A can be formed. On the other hand, in the form of FIG. 5, the central part in the width direction of the opening 4 has an opening length in the transport direction shorter than that in the form of FIG. 6A. Therefore, the thin film layer 6 can be formed thin, and a concave film thickness distribution as shown in FIG. 8B can be formed. Thus, by changing the length L1 of the blocking region S in the transport direction X by the discharge amount adjusting plate 5, that is, the height of the trapezoid in the blocking region S, the film thickness distribution of the thin film layer 6 is changed to a convex shape and a concave shape. And can be formed separately.

Further, as shown in FIGS. 5 and 6B, the length L2 in the direction (width direction) perpendicular to the conveying direction X of the blocking area S by the discharge amount adjusting plate 5 is made different between the unit 1a and the unit 1b. Also, the blocking state of the opening 4 can be changed. In this case, the blocking area can be easily changed. That is, the length L2 in the width direction of the blocking region S by the discharge amount adjusting plate 5 in the unit 1b is shorter than the length L2 in the width direction of the blocking region S by the discharge amount adjusting plate 5 in the unit 1a. At this time, the form of FIG. 5 shows the opening 4 of the unit 1a, and the form of FIG. 6B shows the opening 4 of the unit 1b. In the form of FIG. 6B, the opening area is larger than that of FIG. Then, at the side of the opening 4, more vapor deposition material is released, so that the thin film layer 6 can be formed thick, and a concave film thickness distribution as shown in FIG. 8B or the like can be formed. On the other hand, in the form of FIG. 5, since the opening area of the side part in the width direction of the opening part 4 is smaller than that of the form of FIG. 6B, the emission amount of the vapor deposition material is reduced at the side part of the opening part 4, The thin film layer 6 can be formed thin to form a convex thickness distribution as shown in FIG. 8A. Thus, by changing the length L2 of the blocking region S in the width direction by the discharge amount adjusting plate 5, that is, the length of the lower side of the trapezoid in the blocking region S, the film thickness distribution of the thin film layer 6 is changed to a convex shape and a concave shape. It can be formed separately into shapes. In the form of FIG. 6B, the lower side of the trapezoid of the blocking region S is shorter than the length of the opening 4 in the width direction, and is disposed on the inner side of the corner 4a.

When the blocking area S by the discharge amount adjusting plate 5 is trapezoidal, the length L3 of the upper side of the trapezoid shown in FIG. 6B can be changed by the same procedure as that of the lower side of the trapezoid. The film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape. That is, if the length L3 of the upper side is made longer, the amount of vapor deposition material released at the central portion in the width direction is reduced, so that the film thickness distribution of the thin film layer 6 can be made closer to a concave shape.

Moreover, in the form of FIG. 5, the blocking ratio at the center of the opening 4 by the discharge amount adjusting plate 5 in the unit 1b is higher than the blocking ratio at the center of the opening 4 by the discharging amount adjusting plate 5 in the unit 1a. It is preferable that it is larger. In this embodiment, since the blocking region S is trapezoidal, the amount of vapor deposition material released in the vicinity of the central portion can be easily controlled by increasing or decreasing the blocking ratio at the central portion due to the trapezoid, and the film thickness distribution. Can be convex or concave.

In the form of FIG. 5, it is also preferable that the area of the blocking region S by the discharge amount adjusting plate 5 in the unit 1b is larger than the area of the blocking region S by the discharge amount adjusting plate 5 in the unit 1a. In this embodiment, since the blocking region S has a trapezoidal shape, if the area of the blocking region S formed by the trapezoid is increased, the amount of the vapor deposition material released in the vicinity of the central portion can be easily reduced. The thickness distribution can be made concave. For example, if the lower side of the trapezoid of the blocking region S is fixed as a line segment of the

corners

4a and 4a in the width direction of the opening 4, and the height (length L1) of the trapezoid is increased, the area of the trapezoid is increased. Thus, the amount of discharge near the center can be reduced, and the film thickness distribution can be made concave.

In the form of FIG. 5, it is also preferable that the area of the blocking region S by the discharge amount adjusting plate 5 in the unit 1b is smaller than the area of the blocking region S by the discharge amount adjusting plate 5 in the unit 1a. In this embodiment, the blocking region S has a trapezoidal shape. Therefore, if the area of the blocking region S formed by the trapezoid is reduced, the amount of the vapor deposition material released from the side portion can be easily increased. The distribution can be concave. For example, if the height (length L1) of the trapezoid of the blocking region S is fixed and the lower side (length L2) of the trapezoid is shortened, the area of the trapezoid is reduced and the discharge amount at the side is increased. The distribution can be concave.

By the way, in each said form, in each vapor deposition unit 1, the two discharge | emission amount adjustment plates 5 used as a pair are arrange | positioned along the direction parallel to the conveyance direction X, and a direction parallel to the conveyance direction X (conveyance direction). Projecting along the same direction and the opposite direction). However, the form of the discharge amount adjusting plate 5 is not limited to this. FIG. 7 shows an example of a form in the case where one discharge amount adjusting plate 5 is disposed in the opening 4.

7 is an example in which a leaf-shaped discharge amount adjusting plate 5 is arranged at the center in the transport direction X of the opening 4 so as to straddle the width direction. Thereby, two openings 4 having a small opening ratio in the center in the width direction are formed on the upstream side and the downstream side in the transport direction. FIG. 7A is an example using the discharge amount adjusting plate 5 showing a blocking region where two arcuate outer edges are joined at the edge of the opening 4. Moreover, FIG. 7B is an example using the discharge | emission amount adjustment plate 5 which shows the interruption | blocking area | region S where two trapezoids which protrude in the upstream and downstream are connected in the lower side.

And in the form of FIG. 7, the film thickness distribution of the thin film layer 6 can be changed by changing the length L1 of the conveyance direction X, and the thin film layer 6 can be formed in a convex type or a concave type. . That is, if the length L1 in the transport direction X is increased, the amount of the vapor deposition material released from the central portion in the width direction can be reduced, and the thin film layer 6 can be brought close to a concave shape. In this embodiment, since the discharge amount adjusting plate 5 straddles the opening 4 in the width direction, it is difficult to adjust the length L2 in the width direction, but the discharge amount adjusting plate 5 is disposed so as to straddle the transport direction X. If so, the length L2 in the width direction can be adjusted.

In each of the above embodiments, the blocking region S of the opening 4 is preferably line-symmetric with respect to a line that bisects the opening 4 in the width direction. Thereby, the emission amount distribution from the side part in the width direction to the center part becomes symmetrical in the width direction, and adjustment of the film thickness of the entire laminate is facilitated. Further, the blocking region S of the opening 4 is preferably line-symmetric with respect to a line obtained by dividing the opening 4 into two in the transport direction X. Thereby, it is possible to prevent the film thickness from varying in the transport direction X. In order to obtain a line-symmetric blocking region S, for example, in the form of FIGS. 2 and 5, the two blocking regions S blocked by the discharge amount adjusting plate 5 can have the same shape.

Moreover, it is preferable that the shape of the discharge amount adjusting plate 5 in the plurality of vapor deposition units 1 has variability. Since the shape of the discharge amount adjusting plate 5 has variability, the area of the blocking area can be easily increased or decreased, or the length L1 in the conveying direction X and the length L2 in the width direction in the blocking area S can be easily changed. It is possible to easily adjust the emission amount distribution of the vapor deposition material. For example, the discharge amount adjusting plate 5 can be detachably inserted into the opening 4. In this case, the shape of the blocking region S can be changed using a plurality of discharge amount adjusting plates 5 having different shapes. For example, when using a partial disk-shaped discharge amount adjustment plate 5, the discharge amount distribution plate 5 having a different radius R can be inserted into the vapor deposition unit 1 to adjust the discharge amount distribution. Further, for example, when the trapezoidal discharge amount adjusting plate 5 is used, the discharge amount adjusting plate 5 having a different trapezoidal height or a different upper side length is inserted into the vapor deposition unit 1 to thereby release the discharge amount. The distribution can be adjusted. Further, when the insertion depth can be adjusted, the discharge amount distribution can be adjusted also by the discharge amount adjusting plate 5 having the same shape. For example, if the discharge amount adjusting plate 5 is inserted deeper into the opening 4, the length L1 in the transport direction of the blocking region is increased, or the area of the blocking region S is increased, so that the discharge amount in the central portion is increased. It can be reduced.

FIG. 9 is an example of the organic EL element A manufactured using the organic EL manufacturing apparatus according to the present invention. As shown in FIG. 1, the organic EL element A sequentially stacks the thin film layers 6 from the plurality of vapor deposition units 1 on the surface of the vapor deposition target 10 while conveying the vapor deposition target 10 including the substrate 11. Can be manufactured.

In the organic EL element A of FIG. 9, a first electrode 12 serving as an anode is formed on the surface of a substrate 11, and an organic layer 13 and a second electrode 14 serving as a cathode are stacked on the surface. Yes. In this embodiment, the organic layer 13 is laminated in the order of the hole transport layer 13a, the light emitting layer 13b, the electron transport layer 13c, the intermediate layer 13d, the hole transport layer 13e, the light emitting layer 13f, and the electron transport layer 13g from the substrate 11 side. Each of these layers is formed by vapor deposition. The second electrode 14 is formed by evaporating an electrode material on the surface of the electron transport layer 13g. Therefore, by the above-described organic EL manufacturing apparatus, at least each layer of the organic layer 13 is vapor-deposited on the surface of the first electrode 2 formed on the substrate 11 as a thin film layer 6 so as to be appropriately convex or concave. By doing so, the organic EL element A can be manufactured. In addition, the film thickness distribution of the second electrode 14 may be adjusted to a convex shape or a concave shape. In addition, in the form of FIG. 9, the light emitting layer has a two-stage structure, but it may be a single stage or three or more stages.

In the form of FIG. 9, among the organic layer 13, four layers of the hole transport layer 13a, the intermediate layer 13d, the hole transport layer 13e, and the light emitting layer 13f are formed as the convex thin film layer 6a. Further, the three layers of the light emitting layer 13b, the electron transport layer 13c, and the electron transport layer 13g are formed as the concave thin film layer 6b. In such an organic layer 13, the

units

1a and 1b are arranged side by side in the transport direction corresponding to the convex type and concave type of the thin film layer 6 constituting each layer of the organic layer 13, and the thin film layers 6 are sequentially deposited. Then, they can be formed by laminating. The number of convex thin film layers 6a and the number of concave thin film layers 6b should be close to each other. If the number of convex thin film layers 6a and the number of concave thin film layers 6b are the same or the same, the total thickness of the convex layers and the total thickness of the concave layers are as follows. This makes it easier to adjust the film thickness distribution of the entire laminate. However, if the overall thickness can be adjusted, the number of the concave thin film layers 6b may be one or a small number, or conversely, the number of the convex thin film layers 6a may be one or a small number.

By the way, in the organic EL element A, the layer formed as the concave thin film layer 6b is preferably a concave layer even in the cross section of the organic layer 13 formed by being laminated. That is, it is preferable that the unit 1b is not only for forming the thin film layer 6 alone, but also for laminating the thin film layer 6 as a layer having a concave film thickness distribution even in a stacked state with other layers. In the form of FIG. 9, the light emitting layer 13b, the electron transport layer 13c, and the electron transport layer 13g formed as the concave thin film layer 6b are not only in the cross section of a single layer (see FIG. 8) but in the cross section of the entire organic layer 13. Has a concave film thickness distribution. Thereby, the film thickness at the end side can be made closer to the same thickness as the central part. Moreover, the layer formed as the convex thin film layer 6a may also be a convex layer in the cross section of the organic layer 13 formed by being laminated. That is, the unit 1a is not limited to the case where the thin film layer 6 is formed alone, but may be the one in which the thin film layer 6 is laminated as a layer having a convex film thickness distribution even in a laminated state with other layers.

In the organic EL element A, whether each thin film layer 6 constituting the organic layer 13 is a convex type or a concave type is determined by comparing the thickness at the side portion of the thin film layer 6 with the thickness at the central portion. can do. As shown in FIG. 9, the thin film layer 6 inside the organic layer 13 can be formed on a convex or concave surface that has been laminated so far, and is usually formed on a flat surface as shown in FIG. Is not formed. However, since the thin film layer 6 is laminated on a convex or concave surface with a thickness distribution as shown in FIG. 8, the thickness of the thin film layer 6 is compared between the side portion and the central portion. Whether it is a mold or a concave type can be determined. That is, when the thickness of the center part is thicker than the side part, it can be determined as a convex layer, and conversely, when the thickness of the center part from the side part is thinner, it can be determined as a concave type.

In the organic layer 13 formed by vapor deposition in this way, the thickness of the entire organic layer 13 is closer to the same thickness in the central portion and the side portion. As shown in FIG. 10, in the conventional organic EL manufacturing apparatus, each layer constituting the organic layer 13 is formed with a convex film thickness distribution. It becomes a convex thickness distribution in which the thickness becomes thinner toward the side. When the substrate center and the substrate edge are compared, there is a possibility that a film thickness difference of several tens of nanometers may occur. However, as shown in FIG. 9, in the organic EL element formed by the organic EL manufacturing apparatus described above, the plurality of thin film layers 6 are appropriately formed in a convex shape or a concave shape. And the central part can be closer. Therefore, the difference in film thickness when comparing the substrate center and the substrate edge can be reduced. And if the thickness of a laminated body approaches uniformly as a whole, the light emission luminance in a center part and an edge part will become closer, and in-plane light emission will approach uniformly. That is, light is often extracted to the outside of the element using interference, and when the film thickness is close between the central portion of the substrate and the end portion of the substrate, the degree of interference becomes close and the emission luminance becomes more uniform. Therefore, in the organic EL manufacturing apparatus described above, an organic EL element with higher uniformity of in-plane light emission can be manufactured. In a light emitting panel that emits light in a relatively large area, the uniformity of the entire thickness of the organic layer 13 is important for in-plane light emission uniformity, and an organic material having a light emitting surface with a large area. In the EL element A, the uniformity of in-plane light emission can be improved.

Here, in the organic EL element A, the second electrode 14 can also be formed by vapor deposition, but the uniformity of the film thickness of the organic layer 13 is more important than the thickness of the stacked body including the second electrode 14. . When the first electrode 12 is a light transmissive electrode and the second electrode 4 is a reflective electrode, the light emitted from the light emitting layer is reflected directly or by the second electrode 14 from the transparent substrate 11. It will be taken out to the outside. Therefore, in order to reduce the degree of optical interference, the distance between the interface between the second electrode 14 that is a reflective electrode and the organic layer 13 and the interface between the first electrode 12 that is a light transmissive electrode and the organic layer 13 is used. It is advantageous that becomes more constant. Therefore, it is important to make the thickness of the organic layer 13 uniform in the plane of the light emitting region. However, the thickness of the entire stack of vapor deposition materials including the second electrode 14 may be uniform. In order to make the distance from the light emitting source uniform, it is advantageous that the light emitting layer is a flatter layer (a layer having a small film thickness difference). That is, if the light emitting layer is extremely convex or concave, the light moving distance is likely to be greatly different between the central portion of the substrate and the end portion of the substrate, and the degree of interference is likely to be different. However, when the layer thickness difference is small, the distance of light movement becomes shorter and the coherence becomes closer, so that the light emission becomes more uniform. Therefore, when forming the thin film layer 6, it is more preferable to adjust the convex type or the concave type to further flatten the light emitting layer.

10 and 11 show an example of another embodiment of an organic electroluminescence element manufacturing apparatus (hereinafter also referred to as “organic EL manufacturing apparatus”). This organic EL manufacturing apparatus forms an organic layer 13 by sequentially laminating thin film layers 6 (see FIGS. 8 and 9) from a plurality of vapor deposition units 1 on a transported deposition target (work) 10 by vapor deposition. Thus, an organic electroluminescence element (organic EL element) is manufactured. FIG. 10 shows a state in which three vapor deposition units 1 are sequentially arranged from the upstream side to the downstream side in the conveyance direction (white arrow) X of the vapor deposition target 10, but there are four vapor deposition units 1. It may be the above. For example, the same number of vapor deposition units 1 as the number of thin film layers 6 formed by vapor deposition can be used. In addition, the vapor deposition unit 1 needs to be two or more.

Each of the vapor deposition units 1 in the plurality of vapor deposition units 1 includes a vapor deposition source 2 that radiates a vapor deposition material for forming the thin film layer 6, and a vapor deposition material that is heated to a temperature at which the vapor deposition material is vaporized and emitted from the vapor deposition source 2. And a cylindrical body 3 that discharges toward the deposition target body 10. The cylindrical body 3 is formed in a vertical cylindrical shape having a cavity with a rectangular cross section, and is connected to the vapor deposition source 2 at the lower part and has an opening part 4 for discharging vaporized vapor deposition material upward at the upper part. Is provided. If the vapor deposition material is discharged toward the vapor deposition target 10 by the cylindrical body 3 in this way, the thin film layer 6 can be laminated on the vapor deposition target 10. Further, since the cylindrical body 3 is heated at a temperature equal to or higher than the vaporization temperature of the vapor deposition material, the vapor deposition material can be discharged from the opening 4 without adhering to the inside of the cylindrical body 3. The cylindrical body 3 can be made of metal. The vapor deposition may be vacuum vapor deposition. In FIG. 10, the release of the vapor deposition material is indicated by black arrows.

The cylindrical body 3 can be formed in a substantially rectangular tube shape having four side walls 30. The side wall 30 includes a pair of first side walls 30a and a pair of second side walls 30b. The direction in which the pair of first side walls 30 a face each other is a direction parallel to the transport direction X of the deposition target 10. A direction in which the pair of second side walls 30 b face each other is a direction perpendicular to the transport direction X of the deposition target 10. The cylindrical body 3 has a hot wall structure in which the side wall 30 is heated at a temperature equal to or higher than the vaporization temperature of the vapor deposition material. A curved portion 31 is formed on each first side wall 30a. The entire first side wall 30 a shown in FIG. 11 is formed as a curved portion 31. Therefore, the first side wall 30a is formed in a curved plate shape. The second side wall 30b is formed in a flat plate shape.

As shown in FIG. 11, in this embodiment, the opening 4 has a short side parallel to the transport direction X of the deposition target 10 and is long in a direction substantially perpendicular to the transport direction X of the deposition target 10. It is formed in a shape in which long sides are arranged. Thereby, the thin film layer 6 can be formed with a more uniform film thickness on the surface of the vapor-deposited body 10 to be conveyed. The short side of the opening 4 is formed by the upper edge of the second side wall 30b. The long side of the opening 4 is formed by the upper edge of the first side wall 30a. In this embodiment, the entire opening 4 is formed as an emission region H from which the vapor deposition material is released. The emission region H of this embodiment has the same shape as the emission region H of the embodiment shown in FIG. The dimension between the opposed central parts of the pair of long sides of the opening 4 is formed shorter than the dimension of the short side of the opening 4.

Each vapor deposition unit 1 includes a discharge amount adjustment structure 50 that adjusts the discharge amount distribution of the vapor deposition material from the cylindrical body 3. That is, each vapor deposition unit 1 includes the first side wall 30 a as the discharge amount adjusting structure 50. The first side wall 30 a adjusts the amount of vapor deposition material released from the cylindrical body 3 by changing the shape of the opening 4 of the cylindrical body 3 in a plan view from a rectangular shape.

In the vapor deposition unit 1, the long side of the opening 4 of the cylindrical body 3 is curved, so that the dimension between the opposed central parts of the pair of long sides of the opening 4 is the dimension of the short side of the opening 4. It is formed shorter. Therefore, the planar view shape of the discharge region H of the cylindrical body 3 can be deformed by the shape of the first side wall 30a and the like, and thereby the discharge distribution of the vapor deposition material from the discharge region H can be adjusted. That is, in the vapor deposition unit 1, the first side wall 30 a is curved by the curved portion 31, so that the release distribution of the vapor deposition material can be easily adjusted and the vapor deposition amount distribution can be adjusted. That is, when the vapor deposition unit 1 in which the entire rectangular opening 4 is opened is used, a large amount of vapor deposition material is released in the center portion in the direction (width direction) perpendicular to the transport direction of the vapor deposition target 10, and the width Less vapor deposition material will be released to the side of the direction. Then, the thin film layer 6 is formed in a convex shape in which the film thickness distribution is extremely protruded, and the central portion of the thin film layer 6 is a layer protruding greatly. Therefore, in order to make the deposition amount between the central portion and the side portion of the thin film layer 6 closer, it is possible to easily adjust the film thickness distribution of the thin film layer 6 by changing the shape of the opening 4 in plan view. The amount of vapor deposition between the central portion and the side portion of the thin film layer 6 can be made closer.

In this embodiment, in each vapor deposition unit 1, two pairs of the first side walls 30 a are arranged along a direction parallel to the conveyance direction X of the vapor deposition target 10. That is, the upstream first side wall 30a is disposed on the upstream side in the transport direction X of the deposition target 10, and the downstream first side wall 30a is disposed on the downstream side in the transport direction X of the deposition target 10. Is arranged. The first side wall 30a on the upstream side is formed with a curved portion 31 that curves from the upstream side in the transport direction X toward the downstream side. That is, the first side wall 30a on the upstream side is curved so that the center portion in the width direction (direction perpendicular to the transport direction X) protrudes from the upstream side in the transport direction X toward the downstream side than the end portion in the width direction. is doing. In addition, the first side wall 30a on the downstream side is formed with a curved portion 31 that bends from the downstream side in the transport direction X toward the upstream side. That is, the first side wall 30a on the downstream side is curved so that the center portion in the width direction (direction perpendicular to the transport direction X) protrudes from the downstream side in the transport direction X toward the upstream side from the end portion in the width direction. is doing. By providing such an opening 4, the amount of vapor deposition on the vapor deposition target 10 can be made closer to a value closer to the center and the side.

The organic EL manufacturing apparatus includes transport means 20 for transporting the deposition target 10. The transport means 20 is configured by an appropriate transport mechanism such as a conveyor, whereby the deposition target 10 sequentially passes above the respective vapor deposition units 1 from the upstream side to the downstream side in the transport direction X along the line. Can do. As the conveying means 20, a supporting member that supports the end of the vapor deposition body 10 in the width direction and conveys the entire supporting member so that the lower surface of the vapor deposition body 10 is exposed to the outside is used. Can do. Since the lower surface of the body to be vapor-deposited 10 is exposed, the thin film layer 6 can be formed by vapor-depositing the vapor deposition material released from the cylindrical body 3 on this surface. The vapor-deposited body 10 includes at least the substrate 11. For example, the substrate 11 on which the first electrode 12 is formed can be used. Moreover, the board | substrate 11 with which the 1st electrode 12 and the one part layer of the organic layer 13 were formed in the surface can also be used. And the to-be-deposited body 10 can be comprised by setting the board | substrate 1 to a suitable supporting member with the 1st electrode 12 facing down. The conveying means 20 may be configured by a conveyor such as a roller or a belt disposed at each end in the width direction, and the end in the width direction of the substrate 11 may be placed on the conveyor and conveyed. In vapor deposition, a mask may be stacked on the lower surface of the vapor-deposited body 10. Thereby, it can be made not to vapor-deposit on the outer peripheral part of the to-be-deposited body 10, or the thin film layer 6 can be laminated | stacked by a suitable pattern.

In the organic EL manufacturing apparatus, the thin film layer 6 is sequentially formed by the vapor deposition unit 1 in which the amount distribution of the vapor deposition material from the opening 4 is adjusted, but the amount distribution of the vapor deposition material from the opening 4 is adjusted. Even if it was made, about each single thin film layer 6, it is difficult to laminate | stack vapor deposition material by fixed thickness from the center part of a width direction to a side part. In particular, it is difficult to make all the thin film layers 6 constituting the organic layer 3 uniform in thickness in the width direction. Therefore, in the present embodiment, in the plurality of vapor deposition units 1, the distribution of the emission amount is adjusted by changing the emission amount distribution of the vapor deposition material from the opening 4, and the thickness of the entire laminate is made closer to a constant value. When the ratio of the shape of the opening 4 in plan view that is deformed from the rectangular shape is small, the thin film layer 6 is usually formed with a convex film thickness distribution. The EL element A is manufactured.

In the present embodiment, the plurality of vapor deposition units 1 has a convex distribution vapor deposition unit 1a (hereinafter simply referred to as a film thickness distribution of the thin film layer 6 by adjusting the discharge amount distribution of the vapor deposition material from the opening 4). And a concave distribution vapor deposition unit 1b (hereinafter simply referred to as “unit”) in which the film thickness distribution of the thin film layer 6 is concaved by adjusting the amount distribution of the vapor deposition material from the opening 4. 1b ”). That is, a part of the plurality of vapor deposition units 1 is the unit 1a, and the whole or a part of the remaining part is the unit 1b. As a result, the thin film layer 6 having a convex thickness distribution (convex thin film layer 6a) and the thin film layer having a concave thickness distribution (concave thin film layer 6b) are laminated, and thus formed by vapor deposition. It is possible to make the distribution of the thickness of the entire laminate close to a constant value. And when the thickness of the center part in the organic layer 13 which is a laminated body and the thickness of a side part approach constant, the light emission luminance of a center part and a side part will approach the same grade more. That is, light is often extracted to the outside of the element using interference, and when the film thickness is substantially the same at the central part and the side part of the organic layer 13, the degree of interference becomes substantially the same, and the light emission luminance Approaches constant over the entire surface. Thereby, an organic EL element with more uniform in-plane light emission can be manufactured. In addition to the

units

Here, the unit 1b should just form the thin film layer 6 by the film thickness distribution which has a recessed part which thickness became small as it approached the center part from the side part. In vapor deposition by the vapor deposition unit 1, the amount of vapor deposition may decrease at the edge of the opening 4. In this case, the thickness of the thin film layer 6 may be reduced at the side edge as shown in FIG. Since such a thin film layer 6 also has a recess at the center, it becomes a concave thin film layer 6b. Further, when the area to be stacked increases, the blocking effect at the center portion by adjusting the emission amount distribution due to the shape of the opening 4 decreases, and in this case, the thickness of the thin film layer 6 increases at the center portion as shown in FIG. 8D. However, since such a thin film layer 6 also has a recess in the vicinity of the central portion, it becomes a concave thin film layer 6b. However, in the case of FIG. 8D, the thickness of the portion protruding at the center is preferably smaller than the thickness of the portion protruding at the side.

In order to form the convex thin film layer 6a and the concave thin film layer 6b, the shape of the opening 4 in the unit 1a is preferably different from the shape of the opening 4 in the unit 1b. Thereby, the thin film layer 6 can be easily formed in a convex shape or a concave shape. For example, the area of the opening 4 in the unit 1b is made smaller than the opening area of the opening 4 in the unit 1a, so that the amount of vapor deposition material is released in the central part of the opening 4 less than the side part. To do. Then, the vapor deposition material can be laminated with a concave film thickness distribution to form the concave thin film layer 6b.

In the form of FIG. 11, the film thickness distribution of the thin film layer 6 can be easily made convex or concave by the shape of the opening 4 of the cylindrical body 3 in plan view. In this embodiment, the first side wall 30a of the cylindrical body 3 in the plurality of vapor deposition units 1 is formed in a direction parallel to the transport direction so that the long side constituting the opening edge of the opening 4 becomes an arc shape by the curved portion 31. Projecting along. When the long side of the first side wall 30a constituting the opening edge of the opening 4 has an arc shape, the film thickness distribution can be smoothly changed from the side portion to the center portion of the thin film layer 6. In the plan view shape of the opening 4 in FIG. 11, the long side of the arc-shaped first side wall 30 a is a curved curve that passes through the

corners

4 a and 4 a arranged in the width direction in the opening 4. Yes. This curve may be part of a circle or part of an ellipse. By using the first side wall 30a having such a long arc, the discharge distribution of the vapor deposition material from the opening 4 can be easily changed for each vapor deposition unit 1, and the discharge amount distribution of the vapor deposition material is controlled. it can.

In the form of FIG. 11, the length of the shortest portion between the

first side walls

30a, 30a facing each other in the transport direction (the length between the central portions of the facing curved portions 31, 31) L4 and each first side wall 30a. By changing at least one of the lengths L2 in the direction perpendicular to the transport direction (length between the base portions of the curved portion 31) L2 among the plurality of vapor deposition units 1, the planar view shape of the opening 4 can be changed. . Of course, both the lengths L4 and L2 may be different. When the entire first side wall 30a is curved, the length L2 is a dimension between the

corner portions

4a and 4a.

Referring to FIG. 12, the change in the emission amount distribution due to the shape of the opening 4 in plan view will be described. As shown in FIGS. 11 and 12A, for example, the length L4 of the shortest portion between the

first side walls

30a and 30a facing each other in the transport direction is made different between the unit 1a and the unit 1b. The planar view shape can be changed. In this case, the emission amount distribution and the emission amount area of the opening 4 can be easily changed. That is, the length L4 in the unit 1b is shorter than the length L4 in the unit 1a. At this time, the form of FIG. 13 shows the opening 4 of the unit 1b, and the form of FIG. 12A shows the opening 4 of the unit 1a. In the form of FIG. 12A, the opening length in the transport direction is longer in the central portion in the width direction of the opening 4 than in FIG. In the central portion of the opening 4, more vapor deposition material is released, and the thin film layer 6 can be formed thick, so that a convex thickness distribution as shown in FIG. 8A can be formed. On the other hand, in the form of FIG. 11, since the opening length in the width direction of the opening 4 is shorter than the form of FIG. 12A, the amount of the vapor deposition material released in the center of the opening 4. Therefore, the thin film layer 6 can be formed thin, and a concave film thickness distribution as shown in FIG. 8B can be formed. As described above, by changing the length L4 of the opening 4 in the transport direction, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape.

Further, as shown in FIGS. 11 and 12B, the length (the length between the base portions of the curved portion 31) L2 in the direction (width direction) perpendicular to the conveying direction of the curved portion 31 of the first side wall 30a is set to the unit 1a. It is also possible to change the shape of the opening 4 in plan view by making it different between the unit 1b and the unit 1b. In this case, the emission amount distribution and the emission amount area of the opening 4 can be easily changed. That is, the length L2 in the unit 1b is made shorter than the length L2 in the unit 1a. At this time, the form of FIG. 11 shows the opening 4 of the unit 1a, and the form of FIG. 12B shows the opening 4 of the unit 1b. In the form of FIG. 12B, the opening area is larger than that of FIG. 11 at the side portion in the width direction of the opening 4. Then, on the side of the opening 4, more vapor deposition material is released to form the thin film layer 6 thicker, and to form a concave thickness distribution as shown in FIG. it can. On the other hand, in the form of FIG. 11, since the opening area of the side part in the width direction of the opening 4 is smaller than that of the form of FIG. 12B, the amount of the vapor deposition material released is reduced at the side part of the opening 4. The thin film layer 6 can be formed thin to form a convex thickness distribution as shown in FIG. 8A. Thus, by changing the length L2 in the width direction of the curved portion 31 of the first side wall 30a, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape. In addition, in the form of FIG. 12B, the base part of the curved part 31 of the 1st side wall 30a will be arrange | positioned inside the corner | angular part 4a.

In the form of FIG. 11, the curved portion 31 of the first side wall 30a has an arc shape in which a long side is partially cut out and protrudes along a direction parallel to the conveying direction. 4 opening edges are formed. In this case, the circular radius R drawn by the curved portion 31 shown in FIG. 13 may be made different for each vapor deposition unit 1. That is, the circular radius R by the curved portion 31 in the unit 1a is made different from the circular radius by the curved portion 31 in the unit 1b. Thereby, the planar view shape of the opening part 4 can be changed. In this case, the emission amount distribution and the emission area of the opening 4 can be easily changed. For example, the circular radius R by the curved portion 31 in the unit 1b is made smaller than the circular radius R by the curved portion 31 in the unit 1a. Then, in the unit 1a, the distance between the outer edge and the center of the circle becomes shorter, the radius of curvature (R) drawn by the outer edge becomes smaller, and the curved portion 31 becomes more protruded. In the central portion, the opening ratio is smaller than that of the unit 1a. In the concave distribution vapor deposition unit 1b, the amount of the vapor deposition material is reduced at the center of the opening 4, the thin film layer 6 is formed thin, and a concave film thickness distribution as shown in FIG. 8B is formed. can do. On the other hand, in the unit 1a, since the projection of the blocking region is small, the opening ratio is larger in the center part of the opening part 4 than in the unit 1b. Become more. Therefore, the thin film layer 6 can be formed thick and a convex thickness distribution as shown in FIG. 8A can be formed. Thus, by changing the radius R of the curved portion 31 of the first side wall 30a, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape. When the radius R is changed, for example, the circular shape can pass through the

corners

4 a and 4 a of the opening 4.

When the long side of the first side wall 30a (the edge of the curved portion 31) is partly cut out of an ellipse, the minor axis length (minor axis) of the ellipse or the major axis length By changing the length (major axis) in the same manner as in the case of the radius R of the circle, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape. Also, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape by changing the ratio of the major axis to the minor axis length of the ellipse.

FIG. 14 shows another example of the first side wall 30a. In this embodiment, the first side wall 30a is formed so that its central portion protrudes in a direction parallel to the transport direction from both side portions (corner portions 4a). That is, the plan view shape assuming the first side wall 30a and virtual straight lines connecting the

corners

4a and 4a at both ends thereof is trapezoidal. The shape of the opening 4 in plan view is that the length (dimension) L4 of the central portion in the transport direction X is narrower than the length of the side portion, so that the amount of vapor deposition material released becomes closer to the central portion at the side portion. In addition to the reduction, the thin film layer 6 can be formed so that the amount of the vapor deposition material released does not become too small at the center. The first side wall 30a shown in FIG. The protruding portion 32 is formed to include a central flat portion 32a and inclined portions 32b at both end portions of the flat portion 32a.

11, in each vapor deposition unit 1, two paired first side walls 30 a are arranged along a direction parallel to the transport direction X of the vapor deposition target 10. That is, the upstream first side wall 30a is disposed on the upstream side in the transport direction X of the deposition target 10, and the downstream first side wall 30a is disposed on the downstream side in the transport direction X of the deposition target 10. Is arranged. The upstream first side wall 30 a is formed such that the protruding portion 32 protrudes from the upstream side in the transport direction X toward the downstream side. That is, the first side wall 30a on the upstream side is formed such that the center portion in the width direction (direction perpendicular to the transport direction X) protrudes from the upstream side in the transport direction X toward the downstream side than the end portion in the width direction. Has been. Further, the first side wall 30a on the downstream side is formed such that the protruding portion 32 protrudes from the downstream side in the transport direction X toward the upstream side. That is, the downstream first side wall 30a is formed such that the center portion in the width direction (direction perpendicular to the transport direction X) protrudes from the downstream side in the transport direction X toward the upstream side from the end portion in the width direction. Has been. By providing such an opening 4, the amount of vapor deposition on the vapor deposition target 10 can be made closer to a value closer to the center and the side.

In the plan view shape of the opening 4 in FIG. 14, both ends in the width direction of the opening 4 are equal to the positions of the

corners

4a and 4a. By using such an opening 4, the emission amount distribution and the emission area of the opening 4 can be easily changed for each vapor deposition unit 1, and the emission amount distribution of the vapor deposition material can be controlled.

In the form of FIG. 14, the film thickness distribution of the thin film layer 6 can be adjusted to be convex or concave by making the area of the opening 4 in the unit 1a different from the area of the opening 4 in the unit 1b. Further, even if the area of the opening 4 is the same, if the shape of the opening 4 is changed so that the ratio of the emission amount distribution in the center changes, the film thickness distribution of the thin film layer 6 is convex. It can be adjusted to mold or concave. In other words, in the central portion of the opening 4, the distance between the opposing

first side walls

30 a, 30 a (the length between the

planar portions

32 a, 32 a of the opposing protrusions 32, 32) L4 is easily reduced. The discharge amount of the vapor deposition material in the vicinity of the central portion can be reduced, and the film thickness distribution can be made concave.

Specifically, the length L4 of the shortest portion between the

first side walls

30a and 30a facing each other in the transport direction and between the bases of the protrusions 32 of each first side wall 30a (between the end portions of the

inclined portions

32b and 32b). By changing at least one of the lengths L <b> 2 in the direction perpendicular to the transport direction among the plurality of vapor deposition units 1, the planar view shape of the opening 4 can be changed. Of course, both the lengths L4 and L2 may be different.

Referring to FIG. 15, the change in the emission amount distribution by the emission amount adjusting structure 50 will be described. As shown in FIGS. 14 and 15A, for example, by changing the length L4 of the central portion of the opening 4 in the transport direction X between the unit 1a and the unit 1b, the planar view shape of the opening 4 is changed. be able to. In this case, the emission amount distribution and the emission area from the opening 4 can be easily changed. That is, the length L4 of the central portion of the opening 4 in the unit 1b is shorter than the length L4 of the central portion of the opening 4 in the unit 1a. At this time, the form of FIG. 14 shows the opening 4 of the unit 1b, and the form of FIG. 15A shows the opening 4 of the unit 1a. In the form of FIG. 15A, the length L4 in the transport direction is longer in the central portion in the width direction of the opening 4 than in FIG. In the central portion of the opening 4, more vapor deposition material is released, and the thin film layer 6 can be formed thick, so that a convex thickness distribution as shown in FIG. 8A can be formed. On the other hand, in the form of FIG. 14, the center part in the width direction of the opening 4 has a length L4 in the transport direction shorter than that of the form of FIG. 15A. Therefore, the thin film layer 6 can be formed thin, and a concave film thickness distribution as shown in FIG. 8B can be formed. As described above, by changing the length L4 of the opening 4 in the transport direction, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape.

As shown in FIGS. 14 and 15B, the plane of the opening 4 can also be obtained by making the length L2 in the direction (width direction) perpendicular to the conveying direction of the opening 4 different between the unit 1a and the unit 1b. The visual shape can be changed. In this case, the emission amount distribution and the emission area from the opening 4 can be easily changed. That is, the length L2 in the width direction on the base side of the protruding portion of the first side wall 30a in the unit 1b is shorter than the length L2 in the width direction on the base side of the protruding portion of the first side wall 30a in the unit 1a. . At this time, the form of FIG. 14 shows the opening 4 of the unit 1a, and the form of FIG. 15B shows the opening 4 of the unit 1b. In the form of FIG. 15B, the opening area is larger than that of FIG. 14 at the side portion in the width direction of the opening 4. Then, at the side of the opening 4, more vapor deposition material is released, so that the thin film layer 6 can be formed thick, and a concave film thickness distribution as shown in FIG. 8B or the like can be formed. On the other hand, in the form of FIG. 14, since the opening area of the side part in the width direction of the opening 4 is smaller than that of the form of FIG. 15B, the emission amount of the vapor deposition material is reduced at the side part of the opening 4, The thin film layer 6 can be formed thin to form a convex thickness distribution as shown in FIG. 8A. Thus, the film thickness distribution of the thin film layer 6 can be divided into a convex shape and a concave shape by changing the length L2 in the width direction of the protruding portion of the first side wall 30a. In addition, in the form of FIG. 15B, the length L2 between the base parts of the protrusion part 32 of the 1st side wall 30a becomes shorter than the length of the width direction of the opening part 4, and will be arrange | positioned inside the corner | angular part 4a. .

The thin film layer can also be obtained by changing the width direction length L3 of the flat portion 32a of the protruding portion 32 of the first side wall 30a shown in FIG. 15B in the same manner as in the case of the length L2 on the base side. 6 can be divided into a convex shape and a concave shape. That is, if the length L3 is made longer, the amount of vapor deposition material released at the central portion in the width direction is reduced, so that the film thickness distribution of the thin film layer 6 can be made closer to a concave shape.

Moreover, in the form of FIG. 14, it is preferable that the discharge ratio at the center of the opening 4 in the unit 1b is smaller than the discharge ratio at the center of the opening 4 in the unit 1a. In this embodiment, if the emission ratio at the center of the opening 4 is increased or decreased, the amount of the vapor deposition material released in the vicinity of the center can be easily controlled, and the film thickness distribution can be made convex or concave. It can be done.

Further, in the form of FIG. 14, it is also preferable that the area of the emission region H of the opening 4 in the unit 1b is smaller than the area of the emission region H of the opening 4 in the unit 1a. In this embodiment, if the area of the emission region H of the opening 4 is reduced, the amount of vapor deposition material released in the vicinity of the center can be easily reduced, and the film thickness distribution can be made concave. . For example, if the length L4 between the protruding

portions

32, 32 of the

first side walls

30a, 30a facing each other is fixed as a line segment of the

corners

4a, 4a in the width direction of the opening 4, and the emission region H is reduced. Thus, the amount of discharge in the vicinity of the central portion can be reduced, and the film thickness distribution can be made concave.

Further, in the form of FIG. 14, it is also preferable that the area of the emission region H of the opening 4 in the unit 1b is larger than the area of the emission region H of the opening 4 in the unit 1a. In this embodiment, if the area of the emission region H of the opening 4 is increased, the amount of vapor deposition material released from the side can be easily increased, and the film thickness distribution can be made concave. For example, if the length L4 between the opposing

first side walls

30a and 30a is fixed and the length L2 in the width direction of the opening 4 is shortened, the area of the emission region H of the opening 4 of the opening 4 is increased. Thus, the discharge amount at the side portion can be increased, and the film thickness distribution can be made concave.

In each of the above embodiments, it is preferable that the emission region H of the opening 4 is line symmetric with respect to a line that bisects the opening 4 in the width direction. Thereby, the emission amount distribution from the side part in the width direction to the center part becomes symmetrical in the width direction, and adjustment of the film thickness of the entire laminate is facilitated. Moreover, it is preferable that the discharge region H of the opening 4 is line-symmetric with respect to a line obtained by dividing the opening 4 into two in the transport direction X. Thereby, it can suppress that a film thickness varies in a conveyance direction. In order to obtain the line-symmetric emission region H, for example, in the form of FIGS. 11 and 14, the first side wall 30a can have the same shape.

Moreover, it is preferable that the shape of the first side wall 30a in the plurality of vapor deposition units 1 has variability. Since the shape of the first side wall 30a has variability, the area of the opening 4 can be easily increased or decreased, or the length L4 in the transport direction and the length L2 in the width direction of the opening 4 can be easily changed. It is possible to easily adjust the emission amount distribution of the vapor deposition material.

FIG. 9 is an example of an organic EL element A manufactured using the organic EL manufacturing apparatus according to the present invention shown in FIGS. In the same manner as described above, the organic EL element A is transported from the plurality of vapor deposition units 1 to the thin film layers 6 on the surface of the vapor deposition target 10 while conveying the vapor deposition target 10 including the substrate 11 as shown in FIG. Can be manufactured by sequentially stacking layers by vapor deposition.

The organic electroluminescence device manufacturing apparatus of the embodiment shown in FIGS. 10 to 15 has the following characteristics.

The organic electroluminescence element manufacturing apparatus forms an organic layer by sequentially laminating thin film layers from a plurality of vapor deposition units on a conveyed vapor-deposited body. Each of the plurality of vapor deposition units includes a vapor deposition source that radiates a vapor deposition material for forming the thin film layer, and a temperature at which the vapor deposition material is vaporized, and is emitted from the vapor deposition source. And a cylindrical body that discharges the vapor deposition material toward the deposition target. Further, the cylindrical body has an opening for discharging the vapor deposition material, and the opening is formed so that the discharge amount distribution of the vapor deposition material can be adjusted by a discharge amount adjusting structure. The plurality of vapor deposition units may include a convex distributed vapor deposition unit in which a film thickness distribution of the thin film layer adjusted by the discharge amount adjusting structure is convex, and a thin film layer adjusted by the discharge amount adjusting structure. And a concave distributed vapor deposition unit having a concave thickness distribution. And the said discharge | emission amount adjustment structure is formed by the side wall of the said cylindrical body, and this side wall adjusts the discharge | release amount distribution of the said vapor deposition material from the said opening part by changing the planar view shape of the said opening part.

In the organic electroluminescence element manufacturing apparatus, it is preferable that an area of the emission region of the opening in the convex distributed vapor deposition unit is different from an area of the emission region of the opening in the concave distributed vapor deposition unit.

In the above organic electroluminescence element manufacturing apparatus, it is preferable that the side wall projects along a direction parallel to the transport direction of the deposition target to deform the shape of the opening in plan view.

In the organic electroluminescence element manufacturing apparatus, the side wall has an arc shape and projects along a direction parallel to the transport direction of the deposition target to form an opening edge of the opening. Moreover, it is preferable that the length of the discharge region of the opening in the concave distribution vapor deposition unit in the transport direction is shorter than the length of the discharge region of the opening in the convex distribution vapor deposition unit.

In the organic electroluminescence element manufacturing apparatus, the side wall has an arc shape and projects along a direction parallel to the transport direction of the deposition target to form an opening edge of the opening. In addition, the length of the emission region of the opening in the concave distributed vapor deposition unit in the direction perpendicular to the conveyance direction is longer than the length of the emission region of the opening in the convex distributed vapor deposition unit in the direction perpendicular to the conveyance direction. Is preferably long.

In the above organic electroluminescence element manufacturing apparatus, the side wall is cut out in a circular shape by partially cutting out a circular shape, and protrudes along a direction parallel to the transport direction of the vapor-deposited body. Is forming. Moreover, it is preferable that the circular radius of the side wall in the concave distributed vapor deposition unit is smaller than the circular radius of the side wall in the convex distributed vapor deposition unit.

In said organic electroluminescent element manufacturing apparatus, the said side wall has a protrusion part, and the protrusion part protrudes along the direction parallel to the conveyance direction of the said to-be-deposited body, and forms the opening edge part of the said opening part. . Moreover, it is preferable that the length of the discharge region of the opening in the concave distribution vapor deposition unit in the transport direction is shorter than the length of the discharge region of the opening in the convex distribution vapor deposition unit.

In said organic electroluminescent element manufacturing apparatus, the said side wall has a protrusion part, and the protrusion part protrudes along the direction parallel to the conveyance direction of the said to-be-deposited body, and forms the opening edge part of the said opening part. . Further, the length in the direction perpendicular to the transport direction of the discharge region of the opening in the concave distribution vapor deposition unit is longer than the length of the discharge region of the opening in the convex distribution vapor deposition unit in the direction perpendicular to the transport direction. Is preferably long.

In said organic electroluminescent element manufacturing apparatus, the said side wall has a protrusion part, and the protrusion part protrudes along the direction parallel to the conveyance direction of the said to-be-deposited body, and forms the opening edge part of the said opening part. . In addition, it is preferable that the emission rate of the emission region of the opening in the concave distribution vapor deposition unit is smaller than the emission rate of the emission region of the opening in the convex distribution vapor deposition unit.

(Example 1)
Using the organic EL manufacturing apparatus having a plurality of vapor deposition units 1 as shown in FIG. 1, the organic layer 13 was laminated in-line to manufacture the organic EL element A. As the discharge amount adjusting plate 5 in each vapor deposition unit 1, as shown in FIG. 2, the outer edge is arcuate and protrudes along a direction parallel to the transport direction from both the upstream and downstream sides in the transport direction. The thing of the partial disk shape which interrupts | blocks 4 was used. The length of the opening 4 in the transport direction is about 100 mm, and the length in the width direction is 300 mm.

First, ITO was formed on the surface of the transparent substrate 11 as the first electrode 12 (anode). The transparent substrate 11 was placed with the first electrode 12 facing down, and was transported by the transport device 20 as the deposition target 10.

Next, the organic layer 13 was formed by sequentially laminating the layers constituting the organic layer 13 by discharging the vapor deposition material upward from the vapor deposition units 1 on the surface of the first electrode 12. In this embodiment, the organic layer 13 includes a first hole injection layer, a first hole transport layer, a first light emitting layer, a second light emitting layer, a first electron transport layer, an electron injection layer, a first intermediate layer, and a second intermediate layer. A layer (each thin film layer 6) composed of a layer, a second hole injection layer, a second hole transport layer, a third light emitting layer, and a second electron transport layer.

Here, as the first hole injection layer, a co-evaporated body of 4,4′-bis [N- (naphthyl) -N-phenyl-amino] biphenyl (α-NPD) and molybdenum oxide (MoO ₃ ) is used. The film was formed with a thickness of 30 nm. As the first hole transport layer, α-NPD was used and formed with a thickness of 40 nm. As the first light-emitting layer, a layer in which 7% by mass of rubrene was co-evaporated on Alq ₃ was used, and a film was formed with a thickness of 20 nm. As the second light-emitting layer, 4,4′-bis (2,2′-diphenyl-ethen-1-yl) -diphenyl (BPVBI) and bis [(4,6-difluorophenyl) -pyridinato-N, C2 ′] are used. A layer in which 10% by mass of (picorinate) iridium (III) (FIrpic) was co-evaporated was used to form a film with a thickness of 20 nm.

And about the 1st hole injection layer, the hole transport layer, the 1st light emitting layer, and the 2nd light emitting layer, each layer was formed by unit 1a.

In addition, as the first electron transporting layer, Alq ₃ was used and formed with a thickness of 30 nm. And about the 1st electron carrying layer, it formed by the unit 1b.

As the electron injecting layer _was deposited Li 2 MoO ₄ in a thickness 3 nm. The electron injection layer was formed by vapor deposition using a high temperature vapor deposition unit.

In addition, as the first intermediate layer, Mg was used and was formed with a thickness of 1 nm. As the second intermediate layer, ITO was used and formed into a film with a thickness of 3 nm. As the second hole injection layer, MoO ₃ which is a hole injecting metal oxide was used and was formed to a thickness of 1 nm. And about the 1st intermediate | middle layer, the 2nd intermediate | middle layer, and the 2nd hole injection layer, each layer was vapor-deposited with the high temperature vapor deposition unit.

In addition, as the second hole transport layer, α-NPD was used and formed with a thickness of 40 nm. And about the 2nd hole transport layer, it formed by the unit 1a.

In addition, as the third light emitting layer, a layer obtained by co-evaporating 3% by mass of 4- (Dicyanomethylene) -2-methyl-6- (julolidin-4-yl-vinyl) -4H-pyran (DCM2) on BPVBI with a thickness of A film was formed at 20 nm. As the second electron transporting layer, Alq ₃ was used and formed with a thickness of 30 nm.

The third light emitting layer and the second electron transport layer were formed by the unit 1b.

In this embodiment, the unit 1a uses two discharge amount adjusting plates 5 each having a shape with a radius of 900 mm (diameter 1800 mm) cut out, and each discharge amount adjusting plate 5 has a length of 300 mm in the width direction and a conveying direction. The opening 4 is cut off with a length of about 12.59 mm.

Further, the unit 1b uses two discharge amount adjusting plates 5 each having a shape of a circular shape with a radius of 750 mm (diameter 1500 mm), and each discharge amount adjusting plate 5 has a length of 300 mm in the width direction and a length of about 10 mm in the transport direction. The opening 4 is cut off at 15.15 mm.

Then, as the second electrode 14 (cathode), aluminum was used and a film was formed with a thickness of 100 nm. A high temperature vapor deposition unit was used to form the cathode. The high temperature vapor deposition unit used in this example is a vapor deposition unit that performs vapor deposition at a higher temperature than the

units

1a and 1b.

It should be noted that the same organic EL device can be manufactured even if the hole injection layer, hole transport layer, light emitting layer, electron transport layer, electron injection layer, intermediate layer, and cathode are formed of other materials. Further, the intermediate layer may not be laminated.

Thus, an organic EL element A was obtained. In the organic EL element A, in the cross section of the organic layer 13, the film thickness distributions of the first electron transport layer, the third light emitting layer, and the second electron transport layer are at least concave.

In the organic EL element A thus obtained, the in-plane film thickness distribution of the organic layer 13 was averaged to be ± 3% or less. That is, the error of the film thickness with respect to the average film thickness is 3% or less, and the film thickness when the average film thickness is 100% falls within the range of the minimum value of 97% or more and the maximum value of 103% or less. Met. Here, in the organic EL element A manufactured by the conventional method, the in-plane film thickness distribution of the organic layer 13 is about ± 5% to ± 10%. That is, the film thickness error with respect to the average film thickness is 5% or more, and it is difficult to make it smaller, and the film thickness error may be about 10%. However, in the organic EL element A of this example, the in-plane film thickness distribution of the organic layer 13 is averaged, and the film thickness error is reduced. Therefore, it was possible to obtain an organic EL element A having excellent in-plane film thickness uniformity and more uniform in-plane light emission.

Further, since the organic EL element A of the present example is excellent in in-plane light emission uniformity, it is useful as a self-luminous display device or a lighting device, and can be used particularly as a surface light-emitting lighting panel. is there.

(Example 2)
The organic layer 13 was laminated | stacked in-line using the organic electroluminescent manufacturing apparatus which has the some vapor deposition unit 1 as shown in FIG. In each vapor deposition unit 1, as shown in FIG. 11, the first side wall 30 a has an arc shape and protrudes along a direction parallel to the transport direction from both the upstream and downstream sides in the transport direction to form the opening 4. did. The length of the opening 4 in the transport direction is about 100 mm, and the length in the width direction is 300 mm.

And about the 1st hole injection layer, the hole transport layer, the 1st light emitting layer, and the 2nd light emitting layer, each layer was formed by convex distribution evaporation unit 1a.

In addition, as the first electron transporting layer, Alq ₃ was used and formed with a thickness of 30 nm. And about the 1st electron carrying layer, it formed with the concave distributed vapor deposition unit 1b.

In addition, as the second hole transport layer, α-NPD was used and formed with a thickness of 40 nm. The second hole transport layer was formed by the convex distributed vapor deposition unit 1a.

And about the 3rd light emitting layer and the 2nd electron carrying layer, it formed with the concave distributed vapor deposition unit 1b.

In this embodiment, the unit 1a uses two first side walls 30a having a shape obtained by cutting a circular arc having a radius of 900 mm (diameter 1800 mm), a length L2 in the width direction is 300 mm, and a length L4 in the transport direction is about The discharge region H of the opening 4 is formed at 87.41 mm.

Further, the unit 1b uses two first side walls 30a each having a shape of a circular arc having a radius of 750 mm (diameter 1500 mm), a length of 300 mm in the width direction, and a length of about 84.85 mm in the transport direction. The release region H is formed.

units

1a and 1b.

DESCRIPTION OF SYMBOLS A Organic electroluminescent element 1 Deposition unit 1a Convex distribution vapor deposition unit 1b Concave distribution vapor deposition unit 2 Deposition source 3 Cylindrical body 4 Opening part 5 Emission amount adjustment plate 6 Thin film layer 6a Convex thin film layer 6b Concave thin film layer 10 Deposited body 11 Substrate 12 First electrode 13 Organic layer 14 Second electrode 30 Side wall

Claims

An organic electroluminescence element manufacturing apparatus for forming an organic layer by sequentially laminating thin film layers from a plurality of vapor deposition units on a substrate to be transported,
Each of the plurality of vapor deposition units includes a vapor deposition source that radiates a vapor deposition material for forming the thin film layer, and the vapor deposition material that is heated to a temperature at which the vapor deposition material is vaporized and radiated from the vapor deposition source. And a cylindrical body that discharges the vapor deposition material toward the deposition target body, and the cylindrical body has an opening that discharges the vapor deposition material. Formed to be adjustable,
The plurality of vapor deposition units includes a convex distributed vapor deposition unit in which a film thickness distribution of the thin film layer adjusted by the discharge amount adjusting structure is convex, and a film thickness of the thin film layer adjusted by the discharge amount adjusting structure. An organic electroluminescence element manufacturing apparatus, comprising: a concave distributed vapor deposition unit having a concave distribution.
The discharge amount adjusting structure includes a discharge amount adjusting plate, and the discharge amount adjusting plate is heated to a temperature at which the vapor deposition material is vaporized to partially block the opening and deposit the vapor deposition material from the opening. The organic electroluminescence element manufacturing apparatus according to claim 1, wherein the emission amount distribution is adjusted.
3. The organic electroluminescence device according to claim 2, wherein a cut-off area of the emission amount adjusting plate in the convex distributed vapor deposition unit is different from a cut-off area of the discharge amount adjustment plate in the concave distributed vapor deposition unit. Manufacturing equipment.
The discharge amount adjusting plate has an outer edge formed in an arc shape and protrudes along a direction parallel to the transport direction of the deposition target, and partially blocks the opening.
The length in the transport direction of the blocking region by the discharge amount adjusting plate in the concave distribution vapor deposition unit is longer than the length in the transport direction of the blocking region by the discharge amount adjusting plate in the convex distributed deposition unit. The organic electroluminescence element manufacturing apparatus according to claim 2 or 3.
The discharge amount adjusting plate has an outer edge formed in an arc shape and protrudes along a direction parallel to the transport direction of the deposition target, and partially blocks the opening.
A direction perpendicular to the carrying direction of the blocking region by the discharge amount adjusting plate in the concave distributed vapor deposition unit is longer than a length of the blocking region by the discharge amount adjusting plate in the convex distributed deposition unit in the direction perpendicular to the carrying direction. 5. The organic electroluminescence element manufacturing apparatus according to claim 2, wherein the length of the organic electroluminescence element is short.
The discharge amount adjusting plate is partially cut off by opening a part of a circle and projecting along a direction parallel to the transport direction of the vapor-deposited body with a circular outer edge.
The circular radius by the discharge amount adjusting plate in the concave distributed vapor deposition unit is smaller than the circular radius by the discharge amount adjusting plate in the convex distributed vapor deposition unit. The organic electroluminescence element manufacturing apparatus according to any one of 5.
The discharge amount adjusting plate has a trapezoidal shape and protrudes along a direction parallel to the transport direction of the vapor-deposited body to partially block the opening.
The length in the transport direction of the blocking region by the discharge amount adjusting plate in the concave distribution vapor deposition unit is longer than the length in the transport direction of the blocking region by the discharge amount adjusting plate in the convex distributed deposition unit. The organic electroluminescence element manufacturing apparatus according to claim 2 or 3.
The discharge amount adjusting plate has a trapezoidal shape and protrudes along a direction parallel to the transport direction of the vapor-deposited body to partially block the opening.
In a direction perpendicular to the conveyance direction of the blocking area by the discharge amount adjusting plate in the concave distribution vapor deposition unit, the length in the direction perpendicular to the conveyance direction of the blocking area by the discharge amount adjusting plate in the convex distribution vapor deposition unit. The organic electroluminescence element manufacturing apparatus according to claim 2, wherein the length is short.
The discharge amount adjusting plate has a trapezoidal shape and protrudes along a direction parallel to the transport direction of the vapor-deposited body to partially block the opening.
The blocking ratio at the central portion of the opening by the discharge amount adjusting plate in the concave distributed vapor deposition unit is more than the blocking ratio at the central portion of the opening by the discharge amount adjusting plate in the convex distributed vapor deposition unit. The organic electroluminescence element manufacturing apparatus according to any one of claims 2, 3, 7, and 8, wherein
The discharge amount adjusting structure is formed by a side wall of the cylindrical body, and the side wall adjusts the discharge amount distribution of the vapor deposition material from the opening by changing the shape of the opening in plan view. The organic electroluminescent element manufacturing apparatus according to claim 1, characterized in that:
11. The organic electroluminescence element manufacturing according to claim 10, wherein the side wall is deformed in a plan view of the opening by projecting along a direction parallel to a transport direction of the deposition target. apparatus.
The organic electroluminescence element manufacturing apparatus according to any one of claims 1 to 11, wherein a shape of the emission amount adjusting structure in the plurality of vapor deposition units is variable.
An organic electroluminescent element manufacturing method using the organic electroluminescent element manufacturing apparatus according to any one of claims 1 to 12, wherein the organic electroluminescent element is manufactured.