JPWO2013021628A1 - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 276
- 150000004767 nitrides Chemical class 0.000 claims abstract description 232
- 230000005669 field effect Effects 0.000 claims abstract description 116
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910002704 AlGaN Inorganic materials 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 17
- 108091006149 Electron carriers Proteins 0.000 claims description 3
- 238000002347 injection Methods 0.000 description 47
- 239000007924 injection Substances 0.000 description 47
- 238000000034 method Methods 0.000 description 13
- 230000005684 electric field Effects 0.000 description 12
- 238000012986 modification Methods 0.000 description 10
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- 230000000694 effects Effects 0.000 description 5
- 239000008186 active pharmaceutical agent Substances 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003949 trap density measurement Methods 0.000 description 1
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- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
Description
−電界効果トランジスタの説明−
図1は、本発明の実施形態に係る半導体装置を示す断面図である。ここでは、半導体装置が備える電界効果トランジスタの一例としてHEMTを示す。
電流コラプスを抑制するために、本願発明者らが上述の実施形態に係る電界効果トランジスタを作製するに至った経緯について以下に述べる。
図11は、図1に示す実施形態に係る半導体装置の変形例を示す断面図である。本変形例に係る半導体装置は、図1に示す電界効果トランジスタ(HEMT)200のn型窒化物半導体層111を、形成方法及び形状が異なるn型窒化物半導体層113に置き換えた電界効果トランジスタ206を備えている。
102 バッファ層
103 窒化物半導体層
104 窒化物半導体層
105 ソース電極
106 ドレイン電極
107 ゲート電極
108 p型窒化物半導体層
109 電極
110 2次元電子ガス
111、113 n型窒化物半導体層
200、202、204、206、801 電界効果トランジスタ
213 電子
601 ホール
802 抵抗負荷
803 コイル
804 還流ダイオード
805 電圧源
Claims (11)
- 基板上に形成された第1の窒化物半導体層と、前記第1の窒化物半導体層上に形成され、前記第1の窒化物半導体よりもバンドギャップの大きな第2の窒化物半導体層と、前記第2の窒化物半導体層上に形成されたゲート電極と、前記ゲート電極を間に挟むように形成され、それぞれが少なくとも前記第2の窒化物半導体層に接するソース電極及びドレイン電極とを有し、前記第1の窒化物半導体層と前記第2の窒化物半導体層の界面に形成される2次元電子ガスをチャネルとして用いる電界効果トランジスタを備えている半導体装置であって、
前記電界効果トランジスタは、前記第2の窒化物半導体層上であって、前記ゲート電極と前記ドレイン電極との間に形成され、前記ドレイン電極に電気的に接続されたp型窒化物半導体層をさらに有していることを特徴とする半導体装置。 - 請求項1に記載の半導体装置において、
前記p型窒化物半導体層と前記第1の窒化物半導体層との間にn型窒化物半導体層が形成されていることを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
前記n型窒化物半導体層は、前記第2の窒化物半導体層内又は前記第2の窒化物半導体層上であって、前記p型窒化物半導体層の直下に位置する領域に形成されていることを特徴とする半導体装置。 - 請求項2又は3に記載の半導体装置において、
前記n型窒化物半導体層は前記第2の窒化物半導体層内に形成されており、
前記n型窒化物半導体層のn型不純物濃度は、前記n型窒化物半導体層を除く前記第2の窒化物半導体層のn型不純物濃度よりも高いことを特徴とする半導体装置。 - 請求項2〜4のうちいずれか1つに記載の半導体装置において、
前記p型窒化物半導体層のホールキャリア濃度は、前記n型窒化物半導体層の電子のキャリア濃度よりも大きいことを特徴とする半導体装置。 - 請求項2に記載の半導体装置において、
前記n型窒化物半導体層は、前記第2の窒化物半導体層内に、前記p型窒化物半導体層の下方から前記ソース電極及び前記ドレイン電極に接する位置に亘って形成されていることを特徴とする半導体装置。 - 請求項1〜6のうちいずれか1つに記載の半導体装置において、
前記電界効果トランジスタは、前記p型窒化物半導体層と前記ドレイン電極とを接続する電極をさらに有していることを特徴とする半導体装置。 - 請求項1〜7のうちいずれか1つに記載の半導体装置において、
前記p型窒化物半導体層は前記ドレイン電極とは離間して設けられており、
前記p型窒化物半導体層と前記ゲート電極との距離は、前記p型窒化物半導体層と前記ドレイン電極との距離よりも大きいことを特徴とする半導体装置。 - 請求項1〜8のうちいずれか1つに記載の半導体装置において、
前記第1の窒化物半導体層はGaNで構成されており、
前記第2の窒化物半導体層はAlGaNで構成されていることを特徴とする半導体装置。 - 請求項1〜9のうちいずれか1つに記載の半導体装置において、
前記p型窒化物半導体層は、p型GaNで構成されていることを特徴とする半導体装置。 - 請求項1〜10のうちいずれか1つに記載の半導体装置において、
前記第1の窒化物半導体層及び前記第2の窒化物半導体層のp型不純物濃度は、共に前記p型窒化物半導体層のp型不純物濃度よりも低いことを特徴とする半導体装置。
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JP2014072377A (ja) * | 2012-09-28 | 2014-04-21 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP6307351B2 (ja) * | 2013-05-29 | 2018-04-04 | 株式会社豊田中央研究所 | ヘテロ接合電界効果トランジスタ現象を観察する方法及び装置 |
JP6230456B2 (ja) * | 2014-03-19 | 2017-11-15 | 株式会社東芝 | 半導体装置 |
JP6293623B2 (ja) * | 2014-09-05 | 2018-03-14 | 株式会社東芝 | 半導体検査装置 |
JPWO2017038139A1 (ja) * | 2015-08-28 | 2018-04-12 | シャープ株式会社 | 窒化物半導体装置 |
JP6657913B2 (ja) * | 2015-12-16 | 2020-03-04 | 株式会社豊田中央研究所 | 半導体装置および半導体装置の製造方法 |
CN107230614B (zh) * | 2016-03-25 | 2020-09-04 | 北京大学 | 氮化镓半导体器件的制备方法 |
CN105720097A (zh) * | 2016-04-28 | 2016-06-29 | 中国科学院半导体研究所 | 增强型高电子迁移率晶体管及制备方法、半导体器件 |
US10741682B2 (en) * | 2016-11-17 | 2020-08-11 | Semiconductor Components Industries, Llc | High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic resistance |
US10854718B2 (en) | 2017-02-21 | 2020-12-01 | Semiconductor Components Industries, Llc | Method of forming a semiconductor device |
WO2018198337A1 (ja) * | 2017-04-28 | 2018-11-01 | 三菱電機株式会社 | 半導体装置 |
JP7108386B2 (ja) * | 2017-08-24 | 2022-07-28 | 住友化学株式会社 | 電荷トラップ評価方法 |
TWI715018B (zh) | 2018-04-23 | 2021-01-01 | 愛爾蘭商納維達斯半導體有限公司 | 氮化鎵電晶體結構 |
CN110444597B (zh) * | 2018-05-03 | 2021-03-19 | 苏州捷芯威半导体有限公司 | 半导体器件及其制造方法 |
US10680069B2 (en) | 2018-08-03 | 2020-06-09 | Infineon Technologies Austria Ag | System and method for a GaN-based start-up circuit |
JP7021034B2 (ja) * | 2018-09-18 | 2022-02-16 | 株式会社東芝 | 半導体装置 |
US11257942B2 (en) * | 2019-04-01 | 2022-02-22 | Nuvoton Technology Corporation Japan | Resistive element and power amplifier circuit |
CN114945382A (zh) | 2019-11-26 | 2022-08-26 | 诺华股份有限公司 | Cd19和cd22嵌合抗原受体及其用途 |
WO2021189182A1 (zh) * | 2020-03-23 | 2021-09-30 | 英诺赛科(珠海)科技有限公司 | 半导体装置及其制造方法 |
CN112768519A (zh) * | 2020-04-30 | 2021-05-07 | 英诺赛科(苏州)半导体有限公司 | 半导体器件 |
CN113875019B (zh) | 2020-04-30 | 2024-07-02 | 英诺赛科(苏州)半导体有限公司 | 半导体器件以及制造半导体器件的方法 |
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