JPWO2012029354A1 - 弾性波デバイス - Google Patents
弾性波デバイス Download PDFInfo
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- JPWO2012029354A1 JPWO2012029354A1 JP2012531711A JP2012531711A JPWO2012029354A1 JP WO2012029354 A1 JPWO2012029354 A1 JP WO2012029354A1 JP 2012531711 A JP2012531711 A JP 2012531711A JP 2012531711 A JP2012531711 A JP 2012531711A JP WO2012029354 A1 JPWO2012029354 A1 JP WO2012029354A1
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- silicon oxide
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- wave device
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 145
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 139
- 229910018557 Si O Inorganic materials 0.000 claims abstract description 28
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 29
- 238000010521 absorption reaction Methods 0.000 description 17
- 238000010586 diagram Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 230000004048 modification Effects 0.000 description 11
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 229910008284 Si—F Inorganic materials 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 235000019687 Lamb Nutrition 0.000 description 5
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910020177 SiOF Inorganic materials 0.000 description 2
- -1 Si—CH 3 Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008048 Si-S Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006367 Si—P Inorganic materials 0.000 description 1
- 229910006336 Si—S Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
k2=(f/mo)・[sin2(θ/2)] (数式1)
ここで、kはピーク波数、fはSiとOとの間の原子間力、moは酸素の原子量、θはSi−O−Siの結合角度である。
また、Lorentz-Lorenz関係から、誘電率と密度と分子分極率との関係は次式で表される。
(e−1)/(e+2)=4π・ρ・C (数式2)
ここで、eはシリコン酸化膜の誘電率、ρはシリコン酸化膜の密度、Cは分子分極率である。
シリコン酸化膜の誘電率、密度および分子分極率はSi−O−Si結合角度θと相関性がある。このため、数式1と数式2とから、ピーク波数と誘電率、密度および分子分極とが関係付けられる。
TCF=1/v・(δv/δT)−α (数式3)
ここで、vは弾性波の伝搬速度、(δv/δT)は伝搬速度vの温度Tに対する変化率、αは線熱膨張係数である。
文献”Temperature-compensated surface-acoustic-wave devices with SiO2 film overlays” J. Appl. Phys. Vol. 50, No. 3, pp1360-1369 (1979) によれば、(δv/δT)は、基板(またはシリコン酸化膜)の物質定数(つまり、誘電率、密度およびヤング率等)の温度係数から求められる。このように、数式3からシリコン酸化膜の誘電率、密度およびヤング率等の物質定数とTCFが関係付けられる。
22 櫛型電極
24 反射器
26 Fがドープされたシリコン酸化膜
30 基板
32 下部電極
34 圧電膜
36 上部電極
38 Fがドープされたシリコン酸化膜
40 空隙
Claims (10)
- 圧電体と、
前記圧電体上または前記圧電体を挟んで設けられた、弾性波を励振する電極と、
前記圧電体上に設けられた前記電極を覆ってまたは前記圧電体を挟む前記電極が対向する領域に設けられた、Si−O結合におけるOと置換する元素又は分子がドープされたシリコン酸化膜と、を備えることを特徴とする弾性波デバイス。 - 前記元素又は分子がドープされたシリコン酸化膜は、Si−O結合の伸縮振動の横波光学モードの半値幅が、前記元素又は分子をドープしない場合に比べて小さくなるような前記元素又は分子がドープされていることを特徴とする請求項1記載の弾性波デバイス。
- 前記元素又は分子がドープされたシリコン酸化膜は、Si−O結合の伸縮振動のピーク波数が、前記元素又は分子をドープしない場合に比べて大きくなるような前記元素又は分子がドープされていることを特徴とする請求項1または2記載の弾性波デバイス。
- 前記元素又は分子がドープされたシリコン酸化膜は、アンドープのシリコン酸化膜よりも小さいヤング率を有することを特徴とする請求項1から3のいずれか一項記載の弾性波デバイス。
- 前記元素又は分子がドープされたシリコン酸化膜は、アンドープのシリコン酸化膜よりも音速が遅いことを特徴とする請求項1から4のいずれか一項記載の弾性波デバイス。
- 前記元素又は分子がドープされたシリコン酸化膜には、2種類以上の元素又は分子がドープされていることを特徴とする請求項1から5のいずれか一項記載の弾性波デバイス。
- 前記元素又は分子がドープされたシリコン酸化膜には、Fがドープされていることを特徴とする請求項1から6のいずれか一項記載の弾性波デバイス。
- 前記電極は、Cu、Au、Ag、W、Pt、Mo、Ni、Crのいずれかによって構成されていることを特徴とする請求項7記載の弾性波デバイス。
- 前記元素又は分子がドープされたシリコン酸化膜は、CVD法により形成されることを特徴とする請求項1から8のいずれか一項記載の弾性波デバイス。
- 前記電極は、前記圧電体上に設けられた櫛型電極であり、
前記元素又は分子がドープされたシリコン酸化膜は、前記圧電体上に設けられた前記櫛型電極を覆って設けられていることを特徴とする請求項1から9のいずれか一項記載の弾性波デバイス。
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JP2012531711A JP5521045B2 (ja) | 2010-08-31 | 2011-04-27 | 弾性波デバイス |
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JP2010195020 | 2010-08-31 | ||
JP2010195020 | 2010-08-31 | ||
JP2012531711A JP5521045B2 (ja) | 2010-08-31 | 2011-04-27 | 弾性波デバイス |
PCT/JP2011/060316 WO2012029354A1 (ja) | 2010-08-31 | 2011-04-27 | 弾性波デバイス |
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JPWO2012029354A1 true JPWO2012029354A1 (ja) | 2013-10-28 |
JP5521045B2 JP5521045B2 (ja) | 2014-06-11 |
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Country Status (6)
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US (1) | US8664835B2 (ja) |
EP (1) | EP2613439B1 (ja) |
JP (1) | JP5521045B2 (ja) |
CN (1) | CN103053111B (ja) |
SG (1) | SG186222A1 (ja) |
WO (1) | WO2012029354A1 (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5797979B2 (ja) * | 2011-08-31 | 2015-10-21 | 太陽誘電株式会社 | 弾性波デバイス |
DE102012105286B4 (de) * | 2012-06-18 | 2018-08-09 | Snaptrack, Inc. | Mikroakustisches Bauelement mit TCF Kompensationsschicht |
WO2015041152A1 (ja) * | 2013-09-20 | 2015-03-26 | 株式会社村田製作所 | 振動装置及びその製造方法 |
JP6374653B2 (ja) | 2013-11-18 | 2018-08-15 | 太陽誘電株式会社 | 弾性波フィルタ及び分波器 |
US9331667B2 (en) * | 2014-07-21 | 2016-05-03 | Triquint Semiconductor, Inc. | Methods, systems, and apparatuses for temperature compensated surface acoustic wave device |
CN105738471B (zh) * | 2014-12-11 | 2018-06-19 | 安徽惠洲地质安全研究院股份有限公司 | 一种智能电子敲帮问顶便携式仪器 |
KR101989462B1 (ko) * | 2015-06-24 | 2019-06-14 | 가부시키가이샤 무라타 세이사쿠쇼 | 필터 장치 |
US10177734B2 (en) * | 2015-08-25 | 2019-01-08 | Avago Technologies International Sales Pte. Limited | Surface acoustic wave (SAW) resonator |
US10536133B2 (en) | 2016-04-22 | 2020-01-14 | Avago Technologies International Sales Pte. Limited | Composite surface acoustic wave (SAW) device with absorbing layer for suppression of spurious responses |
US11228299B2 (en) * | 2017-02-02 | 2022-01-18 | Taiyo Yuden Co., Ltd. | Piezoelectric thin film resonator with insertion film, filter, and multiplexer |
JP6882929B2 (ja) | 2017-05-01 | 2021-06-02 | 太陽誘電株式会社 | 弾性波共振器、フィルタおよびマルチプレクサ |
JP6869831B2 (ja) * | 2017-07-03 | 2021-05-12 | 太陽誘電株式会社 | 圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ |
JP6781271B2 (ja) * | 2017-09-22 | 2020-11-04 | 安徽安努奇科技有限公司Anhui Anuki Technologies Co., Ltd. | 圧電共振器の製造方法と圧電共振器 |
US11750169B2 (en) | 2018-07-17 | 2023-09-05 | Ii-Vi Delaware, Inc. | Electrode-defined unsuspended acoustic resonator |
DE102019115589B4 (de) | 2018-07-17 | 2024-06-13 | Ii-Vi Delaware, Inc. | Elektrodenbegrenzter resonator |
JP2020096220A (ja) * | 2018-12-10 | 2020-06-18 | 株式会社村田製作所 | 弾性波装置、高周波フロントエンド回路及び通信装置 |
JP7288307B2 (ja) * | 2019-02-07 | 2023-06-07 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法、フィルタ並びにマルチプレクサ |
TWI810698B (zh) * | 2019-06-12 | 2023-08-01 | 美商特拉華公司 | 電極界定未懸掛之聲波共振器 |
WO2022226913A1 (zh) * | 2021-04-29 | 2022-11-03 | 天津大学 | 压电mems硅谐振器以及电子设备 |
Family Cites Families (9)
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JPS5656025A (en) * | 1979-10-13 | 1981-05-16 | Toshiba Corp | Elastic surface wave resonator |
JPH0640611B2 (ja) * | 1985-03-25 | 1994-05-25 | 株式会社東芝 | 圧電薄膜共振子 |
WO2001035469A1 (fr) * | 1999-11-11 | 2001-05-17 | Mitsubishi Denki Kabushiki Kaisha | Dispositif piezo-electrique a film mince |
FR2848036B1 (fr) * | 2002-11-28 | 2005-08-26 | St Microelectronics Sa | Support pour resonateur acoustique, resonateur acoustique et circuit integre correspondant |
JP2005252069A (ja) * | 2004-03-05 | 2005-09-15 | Tdk Corp | 電子デバイス及びその製造方法 |
US7561009B2 (en) | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
JP5146197B2 (ja) * | 2008-08-21 | 2013-02-20 | 株式会社村田製作所 | 弾性波装置及びその製造方法 |
JP2010088109A (ja) * | 2008-09-05 | 2010-04-15 | Panasonic Corp | 弾性波素子と、これを用いた電子機器 |
JP5207902B2 (ja) * | 2008-09-29 | 2013-06-12 | 京セラ株式会社 | バルク音響波共振子および電子部品 |
-
2011
- 2011-04-27 JP JP2012531711A patent/JP5521045B2/ja active Active
- 2011-04-27 SG SG2012090114A patent/SG186222A1/en unknown
- 2011-04-27 WO PCT/JP2011/060316 patent/WO2012029354A1/ja active Application Filing
- 2011-04-27 EP EP11821372.7A patent/EP2613439B1/en active Active
- 2011-04-27 CN CN201180037548.8A patent/CN103053111B/zh active Active
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2012
- 2012-12-12 US US13/712,218 patent/US8664835B2/en active Active
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EP2613439B1 (en) | 2019-03-13 |
US8664835B2 (en) | 2014-03-04 |
JP5521045B2 (ja) | 2014-06-11 |
CN103053111B (zh) | 2015-07-22 |
US20130099630A1 (en) | 2013-04-25 |
WO2012029354A1 (ja) | 2012-03-08 |
EP2613439A4 (en) | 2014-06-11 |
SG186222A1 (en) | 2013-01-30 |
CN103053111A (zh) | 2013-04-17 |
EP2613439A1 (en) | 2013-07-10 |
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