JPWO2011013746A1 - 成膜装置 - Google Patents

成膜装置 Download PDF

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Publication number
JPWO2011013746A1
JPWO2011013746A1 JP2011524827A JP2011524827A JPWO2011013746A1 JP WO2011013746 A1 JPWO2011013746 A1 JP WO2011013746A1 JP 2011524827 A JP2011524827 A JP 2011524827A JP 2011524827 A JP2011524827 A JP 2011524827A JP WO2011013746 A1 JPWO2011013746 A1 JP WO2011013746A1
Authority
JP
Japan
Prior art keywords
plate
substrate
film forming
film
heat exchange
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011524827A
Other languages
English (en)
Japanese (ja)
Inventor
康男 清水
康男 清水
森　勝彦
勝彦 森
松本　浩一
浩一 松本
智彦 岡山
智彦 岡山
和 森岡
和 森岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Publication of JPWO2011013746A1 publication Critical patent/JPWO2011013746A1/ja
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011524827A 2009-07-31 2010-07-29 成膜装置 Pending JPWO2011013746A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009179412 2009-07-31
JP2009179412 2009-07-31
PCT/JP2010/062784 WO2011013746A1 (ja) 2009-07-31 2010-07-29 成膜装置

Publications (1)

Publication Number Publication Date
JPWO2011013746A1 true JPWO2011013746A1 (ja) 2013-01-10

Family

ID=43529398

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011524827A Pending JPWO2011013746A1 (ja) 2009-07-31 2010-07-29 成膜装置

Country Status (4)

Country Link
JP (1) JPWO2011013746A1 (zh)
CN (1) CN102473609B (zh)
TW (1) TWI473144B (zh)
WO (1) WO2011013746A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9493578B2 (en) 2009-09-02 2016-11-15 Xencor, Inc. Compositions and methods for simultaneous bivalent and monovalent co-engagement of antigens
JP5727820B2 (ja) * 2011-03-02 2015-06-03 株式会社アルバック 成膜装置および成膜方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08339984A (ja) * 1995-06-13 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JP2005123339A (ja) * 2003-10-15 2005-05-12 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置とプラズマｃｖｄ装置用電極
JP2005203627A (ja) * 2004-01-16 2005-07-28 Tokyo Electron Ltd 処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW323387B (zh) * 1995-06-07 1997-12-21 Tokyo Electron Co Ltd

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08339984A (ja) * 1995-06-13 1996-12-24 Tokyo Electron Ltd プラズマ処理装置
JP2005123339A (ja) * 2003-10-15 2005-05-12 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置とプラズマｃｖｄ装置用電極
JP2005203627A (ja) * 2004-01-16 2005-07-28 Tokyo Electron Ltd 処理装置

Also Published As

Publication number Publication date
TWI473144B (zh) 2015-02-11
WO2011013746A1 (ja) 2011-02-03
CN102473609B (zh) 2015-04-01
TW201117265A (en) 2011-05-16
CN102473609A (zh) 2012-05-23

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