JPWO2010128679A1 - Glass member with sealing material layer, electronic device using the same, and manufacturing method thereof - Google Patents

Abstract

In applying local heat sealing such as laser sealing, cracks and cracks in the glass substrate, and peeling of a thin film formed on the surface of the glass substrate are suppressed. The glass substrate 3 has a sealing region. The sealing region is provided with a sealing material layer 5 made of a fired layer of a sealing glass material containing a sealing glass, a low expansion filler, and an electromagnetic wave absorbing material. The sealing material layer 5 contains bubbles in the range of 10 to 30% by volume and contains carbon in the range of 50 to 200 ppm by mass. By laminating such a glass substrate 3 and a glass substrate 2 having an element formation region including an electronic element, the sealing material layer 5 is irradiated with an electromagnetic wave 6 such as a laser beam and melted, whereby the glass substrate 2, 3. Seal the gap.

Description

  The present invention relates to a glass member with a sealing material layer, an electronic device using the same, and a method for manufacturing the same.

  Flat plate display devices (FPD) such as organic electro-luminescence display (OELD), plasma display panel (PDP), liquid crystal display device (LCD), etc. are glass substrates for elements on which display elements such as light emitting elements are formed. And a glass substrate for sealing are arranged opposite to each other, and the display element is sealed with a glass package in which these two glass substrates are sealed (see Patent Document 1). Furthermore, in solar cells such as dye-sensitized solar cells, it has been studied to apply a glass package in which solar cell elements are sealed with two glass substrates (see Patent Document 2).

  Sealing resin or sealing glass is used as a sealing material for sealing between two glass substrates. Since organic EL (OEL) elements and the like are easily deteriorated by moisture, application of sealing glass excellent in moisture resistance and the like is being promoted. Since the sealing temperature by the sealing glass is about 400 to 600 ° C., the characteristics of the electronic element part such as the OEL element are deteriorated when heat treatment is performed using a baking furnace. Therefore, a sealing glass material layer including a laser absorbing material is disposed between the sealing regions provided in the peripheral portions of the two glass substrates, and the sealing glass material layer is locally irradiated by irradiating the laser beam thereto. Attempts have been made to seal by heating and melting (see Patent Documents 1 and 2).

  Sealing by laser irradiation (laser sealing) can suppress the thermal effect on the electronic element part, but on the other hand, the glass substrate is cracked or cracked at the time of sealing, and the wiring layer (on the surface of the glass substrate ( The conductive film) has a drawback that peeling easily occurs. When laser sealing is applied, first, a sealing glass material containing a laser absorbing material is baked on the sealing region of the sealing glass substrate to form a frame-shaped sealing glass material layer. Next, after laminating the sealing glass substrate and the element glass substrate via the sealing glass material layer, the sealing glass material layer is heated and melted by irradiating laser light from the sealing glass substrate side. To seal between the glass substrates.

  The laser beam is irradiated while scanning along the frame-shaped sealing glass material layer. The glass material layer for sealing is melted by locally heating the irradiated portion of the laser beam, and is rapidly cooled and solidified from the time when the irradiation of the laser beam is completed. At this time, the glass material layer for sealing melts and solidifies with a film thickness reduction of about 30 to 50%. Since the reduction in the film thickness of the sealing glass material layer occurs locally continuously in the irradiated portion of the laser beam, it acts as a peeling force on the wiring layer formed on the surface of the glass substrate. As a result, problems such as peeling of the wiring layer and the accompanying deterioration in airtightness occur. Furthermore, stress based on the reduced film thickness of the glass material layer for sealing is applied to the glass substrate. Since this stress is abruptly applied to the local portion, the glass substrate is likely to be cracked or broken.

  In this way, when local heat sealing such as laser sealing is applied for sealing between two glass substrates, it is formed on the surface of the glass material layer for sealing at the time of melting and solidification. Various inconveniences may occur in the glass substrate including the wiring layer thus formed. That is, the reduction in the film thickness of the glass material layer for sealing causes cracks and cracks in the glass substrate itself and peeling of a thin film such as a wiring layer formed on the surface of the glass substrate. As a result, the airtightness and reliability of FPDs such as OELD, PDP, and LCD, or solar cells are reduced.

JP-T-2006-524419 JP 2008-115057 A

  The object of the present invention is to suppress the occurrence of defects such as cracks and cracks in the glass substrate when applying local heating to the sealing between the two glass substrates, thereby sealing the glass substrate and its reliability. The glass member with a sealing material layer that can enhance the property, the method for producing the glass member with the sealing material layer, and further the use of such a glass member with the sealing material layer enables airtightness and its reliability. It is an object of the present invention to provide an electronic device and a method for manufacturing the same.

A glass member with a sealing material layer according to an aspect of the present invention is provided on a glass substrate having a sealing region, and the sealing region of the glass substrate, and includes a sealing glass, a low expansion filler, and an electromagnetic wave absorber. A sealing material layer comprising a fired layer of a glass material for sealing containing, the sealing material layer contains bubbles in a volume ratio of 10 to 30%, and a mass ratio of 50 to 200 ppm. It is characterized by containing a range of carbon.
The method for producing a glass member with a sealing material layer according to an aspect of the present invention includes a sealing glass, a low expansion filler, and an electromagnetic wave absorbing material on the sealing region of a glass substrate having a sealing region. A sealing glass material layer is formed, and then the sealing glass material layer is fired to contain bubbles in a volume ratio of 10 to 30% and contain carbon in a mass ratio of 50 to 200 ppm. It is characterized by a material layer.

  An electronic device according to an aspect of the present invention includes a first glass substrate having an element formation region including an electronic element, and a first sealing region provided on an outer peripheral side of the element formation region, and the first glass substrate The glass substrate has a second sealing region corresponding to the first sealing region, and the surface having the second sealing region has the first sealing region of the first glass substrate. The first sealing region and the second glass substrate are disposed so as to face the surface, and the space between the first glass substrate and the second glass substrate is sealed. A sealing layer formed between the sealing region and a sealing layer made of a fused glass material for sealing containing sealing glass, a low expansion filler and an electromagnetic wave absorbing material, It contains bubbles in the range of 10-35% by volume, and the size of the bubbles is 0.1-100 μm It is characterized in that in the range of.

  An electronic device manufacturing method according to an aspect of the present invention provides a first glass substrate having an element formation region including an electronic element and a first sealing region provided on an outer peripheral side of the element formation region. A second sealing region corresponding to the first sealing region of the first glass substrate, a sealing glass, a low expansion filler, and an electromagnetic wave absorbing material formed on the second sealing region. And a sealing material layer containing carbon in the range of 50 to 200 ppm in terms of mass ratio, and including bubbles in the range of 10 to 30% by volume. A second glass substrate is prepared, and the first glass substrate and the second glass substrate are opposed to each other with a surface having the first sealing region and a surface having the second sealing region. Laminated through the sealing material layer, and then The sealing material layer is heated by locally irradiating the sealing material layer through one glass substrate or the second glass substrate and growing at least a part of the bubbles in the sealing material layer. A material layer is melted to form a sealing layer that seals between the first glass substrate and the second glass substrate.

  According to the glass member with the sealing material layer and the manufacturing method thereof according to the aspect of the present invention, it is possible to suppress defects such as cracks and cracks of the glass substrate at the time of sealing using local heating with high reproducibility. Therefore, according to the electronic device and the manufacturing method thereof according to the aspect of the present invention, it is possible to improve the airtightness and the reliability thereof.

It is sectional drawing which shows the structure of the electronic device by embodiment of this invention. It is sectional drawing which shows the manufacturing process of the electronic device by embodiment of this invention. It is a top view which shows the 1st glass substrate used in the manufacturing process of the electronic device shown in FIG. It is sectional drawing along the AA line of FIG. It is a top view which shows the 2nd glass substrate used at the manufacturing process of the electronic device shown in FIG. It is sectional drawing along the AA line of FIG. It is sectional drawing which expands and shows the 1st and 2nd glass substrate shown in FIG. It is sectional drawing which expands and shows the electronic device shown in FIG.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a configuration of an electronic device according to an embodiment of the present invention, FIG. 2 is a diagram showing a manufacturing process of the electronic device, and FIGS. 3 to 6 are diagrams showing configurations of first and second glass substrates used therefor. FIG. 7 is an enlarged sectional view showing a part of the first and second glass substrates, and FIG. 8 is an enlarged sectional view showing a part of the electronic device. An electronic device 1 shown in FIG. 1 constitutes a lighting device using a light emitting element such as an FPD such as an OELD, PDP, or LCD, or an OEL element, or a solar cell such as a dye-sensitized solar cell.

The electronic device 1 includes a first glass substrate (element glass substrate) 2 having an element formation region 2 a including an electronic element, and a second glass substrate (sealing glass substrate) 3. The first and second glass substrates 2 and 3 are made of, for example, non-alkali glass or soda lime glass. The alkali-free glass has a thermal expansion coefficient of about 35 to 40 (× 10 ⁻⁷ / ° C.). Soda lime glass has a thermal expansion coefficient of about 85 to 90 (× 10 ⁻⁷ / ° C.).

  In the element formation region 2a of the first glass substrate 2, an electronic element corresponding to the electronic device 1, for example, an OEL element for OELD or OEL illumination, a plasma light emitting element for PDP, a liquid crystal display element for LCD, If it is a solar cell, a dye-sensitized photoelectric conversion part etc. will be formed. Electronic elements such as light emitting elements such as OEL elements and solar cell elements such as dye-sensitized photoelectric conversion units have various known structures, and are not limited to these element structures.

  As shown in FIGS. 3 and 4, the first glass substrate 2 has a first sealing region 2 b provided on the outer peripheral side of the element formation region 2 a. The first sealing region 2b is set so as to surround the element formation region 2a. As shown in FIGS. 5 and 6, the second glass substrate 3 has a second sealing region 3a. The second sealing region 3a corresponds to the first sealing region 2b. That is, when the first glass substrate 2 and the second glass substrate 3 are disposed to face each other, the first sealing region 2b and the second sealing region 3a are set to face each other, which will be described later. Thus, it becomes the formation region of the sealing layer 4 (the formation region of the sealing material layer 5 for the second glass substrate 3).

  The 1st glass substrate 2 and the 2nd glass substrate 3 are arrange | positioned so that the surface which has sealing area | region 2b, 3a may be made to oppose, and the gap | interval may be formed on the element formation area 2a, for example. In a solar cell element or the like, a gap may not be formed on the element formation region 2a. The space between the first glass substrate 2 and the second glass substrate 3 is sealed with a sealing layer 4. That is, the sealing layer 4 seals between the sealing region 2 b of the first glass substrate 2 and the sealing region 3 a of the second glass substrate 3 while providing a gap between the glass substrates 2 and 3. Is formed. The electronic element formed in the element formation region 2 a is hermetically sealed with a glass panel constituted by the first glass substrate 2, the second glass substrate 3, and the sealing layer 4.

  The sealing layer 4 is composed of a melt-fixed layer in which the sealing material layer 5 formed on the sealing region 3 a of the second glass substrate 3 is melted and fixed to the sealing region 2 b of the first glass substrate 2. Is. The sealing material layer 5 is melted by local heating using an electromagnetic wave 6 such as laser light or infrared light. That is, the frame-shaped sealing material layer 5 is formed in the sealing region 3a of the second glass substrate 3 used for manufacturing the electronic device 1 as shown in FIGS. By melting and fixing the sealing material layer 5 formed in the sealing region 3a of the second glass substrate 3 to the sealing region 2b of the first glass substrate 2 with heat of electromagnetic waves 6 such as laser light and infrared rays. Then, a sealing layer 4 that hermetically seals between the first glass substrate 2 and the second glass substrate 3 is formed.

  As shown in FIG. 7, the first glass substrate 2 has a thin film 7 formed on the surface having the sealing region 2b. The thin film 7 formed on the surface of the first glass substrate 2 functions, for example, as a wiring for drawing out the electrode of the electronic element formed in the element forming region 2a to the outside of the glass panel. Typical examples of the thin film 7 functioning as a wiring include a transparent conductive film such as a tin-doped indium oxide (ITO) film or a fluorine-doped tin oxide (FTO) film.

  A transparent conductive film such as an ITO film or an FTO film is not limited to a single film, and may be laminated with another conductive film or an insulating film. Examples of the conductive film laminated with the ITO film or the FTO film include conductive metal films such as an aluminum film, an aluminum alloy film, a copper film, and a copper alloy film. Examples of the insulating film include insulating inorganic compound films such as a silicon oxide film and a silicon nitride film. In some cases, the thin film 7 may be composed of only a conductive metal film, an insulating inorganic compound film, or a laminated film thereof. The thin film 7 is made of at least one selected from a conductive film and an insulating film.

  When the wiring is drawn from both the upper and lower surfaces of the electronic element like a solar cell, a thin film is also formed on the surface of the second glass substrate 3 having the sealing region 3a. Depending on the element structure or the like, a thin film may be formed only on the surface of the second glass substrate 3 having the sealing region 3a. As described above, FIG. 7 shows the thin film 7 formed on the surface having the sealing region 2b of the first glass substrate 2, but the form of the thin film 7 is not limited to this. The second glass substrate 2 or 3 is formed on the surface having at least one sealing region 2b or 3a.

  In the case where the thin film 7 is formed on the surface of the first glass substrate 2 as wiring for drawing out the electrode of the electronic element to the outside of the glass panel, the thin film 7 is formed so as to cross the sealing region 2b. Therefore, as shown in FIG. 8, at least a part of the sealing layer 4 comes into contact with the thin film 7. The same applies to the case where a thin film is formed on the surface of the second glass substrate 3, and at least a part of the sealing material layer 5 and thus the sealing layer 4 is in contact with the thin film. Thus, when at least a part of the sealing material layer 5 is in contact with the thin film 7, it is important to suppress peeling of the thin film 7 when the sealing layer 4 is formed.

  The sealing material layer 5 is a fired layer of a sealing glass material containing a sealing glass (glass frit), an electromagnetic wave absorbing material (a material that generates heat by absorbing electromagnetic waves such as laser light and infrared rays), and a low expansion filler. is there. The glass material for sealing preferably contains a low expansion filler in order to match the coefficient of thermal expansion with the coefficient of thermal expansion of the glass substrates 2 and 3. The glass material for sealing is obtained by blending an electromagnetic wave absorbing material and a low expansion filler into sealing glass as a main component. The glass material for sealing may contain additives other than these as required.

  For the sealing glass (glass frit), for example, low-melting glass such as tin-phosphate glass, bismuth glass, vanadium glass, lead glass or the like is used. Of these, tin-phosphate glass is used in consideration of sealing properties (adhesiveness) to the glass substrates 2 and 3, reliability thereof (adhesion reliability and sealing properties), and influence on the environment and human body. It is preferable to use sealing glass made of bismuth glass. The glass transition point of the sealing glass is preferably 250 to 300 ° C. From this point, it is desirable to use tin-phosphate glass.

Tin-phosphate glass (glass frit) is 20 to 68 mol% SnO, 0.5 to 5 mol% SnO ₂ and 20 to 40 mol% P ₂ O ₅ (basically, the total amount is 100 It is preferable to have a composition of (mol%). SnO is a component for lowering the melting point of glass. If the SnO content is less than 20 mol%, the viscosity of the glass will be high and the sealing temperature will be too high, and if it exceeds 68 mol%, it will not vitrify.

SnO ₂ is a component for stabilizing the glass. When the content of SnO ₂ is less than 0.5 mol%, SnO ₂ is separated and precipitated in the glass that has been softened and melted during the sealing operation, the fluidity is impaired, and the sealing workability is lowered. If the content of SnO ₂ exceeds 5 mol%, SnO ₂ is likely to precipitate during melting of the low-melting glass. P ₂ O ₅ is a component for forming a glass skeleton. When the content of P ₂ O ₅ is less than 20 mol%, the glass does not vitrify, and when the content exceeds 40 mol%, the weather resistance, which is a disadvantage specific to phosphate glass, may be deteriorated.

Here, the ratio (mol%) of SnO and SnO ₂ in the glass frit can be determined as follows. First, after the glass frit (low melting point glass powder) is acid-decomposed, the total amount of Sn atoms contained in the glass frit is measured by ICP emission spectroscopic analysis. Next, since Sn ²⁺ (SnO) is obtained by acidimetric decomposition, the amount of Sn ²⁺ determined there is subtracted from the total amount of Sn atoms to obtain Sn ⁴⁺ (SnO ₂ ).

The glass formed of the above three components has a low glass transition point and is suitable for a low-temperature sealing material. However, a component that forms a glass skeleton such as SiO ₂ , ZnO, B ₂ O ₃ , Al _{2 O 3, WO 3, MoO} 3, Nb 2 O 5, TiO 2, ZrO 2, Li 2 O, stabilizing Na 2 O, K 2 O, Cs 2 O, MgO, CaO, SrO, the glass BaO, etc. The component to be made may be contained as an optional component. However, if the content of any component is too large, the glass becomes unstable and devitrification may occur, and the glass transition point and softening point may increase. Therefore, the total content of any component is 30 mol%. The following is preferable. The glass composition in this case is adjusted so that the total amount of the basic component and the optional component is basically 100 mol%.

  The glass material for sealing contains an electromagnetic wave absorber that functions as a laser absorber or an infrared absorber. As the electromagnetic wave absorbing material, a compound such as at least one metal selected from Fe, Cr, Mn, Co, Ni and Cu or an oxide containing the metal is used. The content of the electromagnetic wave absorbing material is preferably in the range of 0.1 to 10% by volume with respect to the sealing glass material. When the content of the electromagnetic wave absorbing material is less than 0.1% by volume, the sealing material layer 5 cannot be sufficiently melted when irradiated with laser light or infrared rays. If the content of the electromagnetic wave absorbing material exceeds 10% by volume, the second glass substrate 3 may be cracked due to local heat generation near the interface with the second glass substrate 3 when irradiated with laser light or infrared rays. Moreover, there is a possibility that the fluidity at the time of melting of the glass material for sealing deteriorates and the adhesiveness with the first glass substrate 2 is lowered.

The glass material for sealing further contains a low expansion filler. As the low expansion filler, at least one selected from silica, alumina, zirconia, zirconium silicate, cordierite, zirconium phosphate compound, soda lime glass and borosilicate glass is used. Zirconium phosphate compounds include (ZrO) ₂ P ₂ O ₇ , NaZr ₂ (PO ₄ ) ₃ , KZr ₂ (PO ₄ ) ₃ , Ca _0.5 Zr ₂ (PO ₄ ) ₃ , Na _0.5 Nb. _0.5 Zr _1.5 (PO ₄ ) ₃ , K _0.5 Nb _0.5 Zr _1.5 (PO ₄ ) ₃ , Ca _0.25 Nb _0.5 Zr _1.5 (PO ₄ ) ₃ , NbZr (PO ₄ ) ₃ , Zr ₂ (WO ₃ ) (PO ₄ ) ₂ , and composite compounds of these. The low expansion filler has a lower thermal expansion coefficient than the sealing glass which is the main component of the sealing glass material.

  The content of the low expansion filler is appropriately set so that the thermal expansion coefficient of the glass material for sealing approaches the thermal expansion coefficient of the glass substrates 2 and 3. The low expansion filler is preferably contained in the range of 1 to 50% by volume with respect to the sealing glass material, although it depends on the thermal expansion coefficient of the sealing glass and the glass substrates 2 and 3. If the content of the low expansion filler is less than 1% by volume, the effect of adjusting the thermal expansion coefficient of the glass material for sealing cannot be sufficiently obtained. On the other hand, if the content of the low expansion filler exceeds 50% by volume, the fluidity of the glass material for sealing may be lowered and the adhesive strength may be lowered.

The content of the low expansion filler is preferably in the range of 25 to 50% by volume. By making content of a low expansion | swelling filler into 25 volume% or more, the fluidity | liquidity of the glass material for sealing can be controlled moderately. That is, when the sealing material layer 5 is heated and melted with laser light or infrared rays, the flow of the sealing glass material in the line width direction (the surface direction of the glass substrates 2 and 3) is suppressed. Thereby, the film thickness reduction of the sealing material layer 5 can be suppressed. However, if the content of the low expansion filler is too large, the fluidity of the glass material for sealing is too low, so the content of the low expansion filler is preferably 50% by volume or less.
Thermal expansion coefficient of the sealing glass material containing and a low-expansion filler and an electromagnetic wave absorbing material sealing glass is preferably ^{40~85 (× 10 -7 / ℃)} , 45~75 (× 10 -7 / ℃ ) Is more preferable.

  By the way, when laser light is used for local heating of the sealing material layer 5, for example, the sealing material layer 5 is melted in order from the portion irradiated with the laser light scanned along the laser beam, and is rapidly cooled with the end of the laser light irradiation. It is solidified and fixed to the first glass substrate 2. Thus, melting and solidification of the sealing material layer 5 occurs locally and continuously. For this reason, when the film thickness reduction of the sealing material layer 5 at the time of melting is large, a force is applied to the thin film 7 formed on the surface of the glass substrate 2 (3) in the peeling direction. Further, stress based on the reduced film thickness of the sealing material layer 5 is applied to the glass substrates 2 and 3. Since this stress is abruptly applied to the local portion, the glass substrates 2 and 3 are cracked or broken.

  In contrast to this, the sealing material layer 5 of the embodiment contains 10 to 30% of bubbles by volume. It is considered that the minute bubbles existing in the sealing material layer 5 expand when heated by laser irradiation, infrared irradiation, or the like, or bubbles adjacent to each other grow together. In addition, carbon is vaporized as carbon dioxide gas, which may increase the amount of gas or generate new bubbles. By these, the film thickness reduction at the time of the fusion | melting of the sealing material layer 5 can be suppressed. Accordingly, the peeling force applied to the thin film 7 as the sealing material layer 5 is locally melted and solidified, and the stress applied to the glass substrates 2 and 3 are alleviated. That is, it becomes possible to prevent the peeling of the thin film 7 accompanying the formation of the sealing layer 4 and the cracks and cracks of the glass substrates 2 and 3 with high reproducibility.

  When the ratio of the bubbles in the sealing material layer 5 is less than 10% by volume, it is not possible to sufficiently obtain the effect of suppressing the film thickness reduction based on the volume expansion of the bubbles when irradiated with laser light or infrared rays. When the bubbles are less than 10% by volume, the volume expansion that compensates for the decrease in film thickness due to the melt flow of the sealing material layer 5, that is, the effect of increasing the film thickness cannot be sufficiently obtained. On the other hand, when the ratio of the bubbles in the sealing material layer 5 exceeds 30% by volume, the adhesive strength of the sealing layer 4 is lowered by excessively increasing the volume of the bubbles after melting and solidification.

  The size of bubbles in the sealing material layer 5 is preferably in the range of 0.1 to 50 μm. The size of the bubble indicates the major axis. If the size of the bubbles is smaller than 0.1 μm, when the amount of bubbles is increased, the dispersed state of the bubbles becomes too dense, and the thickness of the glass layer between the bubbles may be reduced. In such a state, the adhesive strength of the sealing layer 4 tends to decrease. On the other hand, if the size of the bubble exceeds 50 μm, it becomes easy to form an open cell after irradiation with laser light or infrared rays, and the hermeticity of the sealing layer 4 may be lowered.

  At least some of the bubbles in the sealing material layer 5 grow based on volume expansion, coalescence, or the like during laser heating or infrared heating. In order to promote such bubble growth, the sealing material layer 5 contains an appropriate amount of carbon. Carbon reacts with oxygen in the glass component during heating to become a gas such as carbon dioxide. In this way, by generating gas in the sealing material layer 5 during heating, bubbles can be grown more effectively. In obtaining such an effect, the amount of carbon in the sealing material layer 5 is set to a range of 50 to 200 ppm by mass ratio.

  If the amount of carbon in the sealing material layer 5 exceeds 200 ppm, the amount of gas generated during laser heating or infrared heating will increase so much that open cells may increase and the hermeticity of the sealing layer 4 may decrease. is there. If the amount of carbon in the sealing material layer 5 is less than 50 ppm, the amount of generated gas is insufficient, and the volume of bubbles in the sealing material layer 5 cannot be increased sufficiently. In this case, the difference in film thickness between the part that has been heated and solidified and the part that has been heated and melted increases, and strains based on such film thickness difference accumulate, thereby cracking the glass substrates 2 and 3. Further, cracking or peeling of the sealing layer 4 and peeling of the thin film 7 are likely to occur.

  With respect to the sealing layer 4 which is a molten and solidified body of the sealing material layer 5, it is preferable that the volume ratio of the bubbles is in the range of 5 to 35%. In particular, the volume ratio is preferably larger than the volume ratio of bubbles in the sealing material layer 5 before sealing. The size (major axis) of bubbles in the sealing layer 4 is preferably in the range of 0.1 to 100 μm. In particular, it is preferable that bubbles larger than the bubbles in the sealing material layer 5 before sealing exist. That the bubble ratio of the sealing layer 4 is small and the size of the bubbles is small means that the film thickness reduction from the sealing material layer 5 is not sufficiently suppressed. For this reason, the glass substrates 2 and 3 are cracked, the sealing layer 4 is cracked and peeled off, and the thin film 7 is peeled off. When the ratio of the bubbles in the sealing layer 4 is large and the size of the bubbles is large, the adhesive strength and airtightness of the sealing layer 4 are likely to be lowered.

The thickness _{T 2} of the sealing layer 4, the thickness _{T 1} of the sealing material layer 5 is preferably set to 0.9 T ₁ or 1.1 T ₁ or less. Furthermore, the volume V ₂ of the sealing layer 4 is preferably in the range of more than 1V ₁ and 1.15 V ₁ or less with respect to the volume V ₁ of the sealing material layer 5. By satisfying such conditions, reproducibility of cracks in the glass substrates 2 and 3, cracking and peeling of the sealing layer 4, peeling of the thin film 7, and the like due to a decrease in the film thickness when the sealing material layer 5 is melted. It becomes possible to suppress well. The thickness T ₂ of the sealing layer 4 and even more preferably to a 1T ₁ or more. More preferably, the volume V ₂ of the sealing layer 4 is 1.02 V ₁ or more.

The sealing material layer 5 is formed on the sealing region 3a of the second glass substrate 3 as follows.
First, a sealing material paste is prepared by mixing a sealing glass material with a vehicle. The vehicle is obtained by dissolving a resin as a binder component in a solvent. Examples of the resin for the vehicle include cellulose resins such as methyl cellulose, ethyl cellulose, carboxymethyl cellulose, oxyethyl cellulose, benzyl cellulose, propyl cellulose, and nitrocellulose, methyl methacrylate, ethyl methacrylate, butyl methacrylate, 2-hydroxyethyl methacrylate, and butyl acrylate. An organic resin such as an acrylic resin obtained by polymerizing one or more acrylic monomers such as 2-hydroxyethyl acrylate is used. Solvents such as terpineol, butyl carbitol acetate, and ethyl carbitol acetate are used in the case of a cellulose resin, and solvents such as methyl ethyl ketone, terpineol, butyl carbitol acetate, and ethyl carbitol acetate are used in the case of an acrylic resin. .

  The viscosity of the sealing material paste may be adjusted to the viscosity corresponding to the apparatus applied to the glass substrate 3, and can be adjusted by the ratio of the resin (binder component) and the solvent in the vehicle and the ratio of the sealing glass material and the vehicle. . A known additive may be added to the sealing material paste as a glass paste such as an antifoaming agent or a dispersing agent. A known method using a rotary mixer equipped with a stirring blade, a roll mill, a ball mill or the like can be applied to the preparation of the sealing material paste.

  A sealing material paste is applied to the sealing region 3a of the second glass substrate 3, and this is dried to form an application layer of the sealing material paste. The sealing material paste is applied onto the second sealing region 3a by applying a printing method such as screen printing or gravure printing, or is applied along the second sealing region 3a using a dispenser or the like. To do. The coating layer of the sealing material paste is dried, for example, at a temperature of 120 ° C. or more for 10 minutes or more. A drying process is implemented in order to remove the solvent in an application layer. If the solvent remains in the coating layer, the binder component may not be sufficiently decomposed and burned in the subsequent firing step.

  The coating layer of the sealing material paste described above is fired to form the sealing material layer 5. In the firing step, the coating layer is first heated to a temperature below the glass transition point of sealing glass (glass frit), which is the main component of the sealing glass material, the binder component in the coating layer is decomposed and burned, and then sealed. Heated to a temperature equal to or higher than the softening point of glass (glass frit), melting glass material for sealing, foaming and foaming the melt with gas generated by decomposition and combustion of binder components (hereinafter referred to as decomposition gas) The melt is baked on the glass substrate 3. Thus, the sealing material layer 5 which consists of a baking layer of the glass material for sealing is formed.

  In the step of forming the sealing material layer 5, when the binder component is decomposed and burned by heating to a temperature below the glass transition point of the sealing glass, it is heated to a temperature above the softening point of the sealing glass. The amount of bubbles and the size of the bubbles in the sealing material layer 5 can be controlled by adjusting the temperature rising rate and the like. Usually, in order to obtain a dense sealing material layer 5, the decomposition gas is removed at a heating rate of 1 to 10 ° C./min from the softening point of the sealing glass to the firing temperature. By making the temperature rising rate within the range of 20 to 70 ° C./min, it is possible to obtain the sealing material layer 5 in which the cracked gas remains and the bubbles having an appropriate size are present in the desired range. Also, if the heating rate is increased within this range, the amount of bubbles increases and small bubbles are obtained, and if the rate of increase is slow, the amount of bubbles decreases and large bubbles are obtained.

  Further, in the step of forming the sealing material layer 5, (1) an organic substance or carbon is added to the sealing glass (or sealing glass material) as a carbon source, and the carbon derived from the carbon source is contained in the sealing glass material. (2) Controlling the carbon content of the sealing material layer 5 by applying a method such as leaving a part of the carbon derived from the binder component (organic resin) or the organic solvent in the sealing material paste. To do. The method (2) is preferable because the amount of carbon can be controlled without adding a special step. In addition, even if it is a method other than these, if it is a method which can make the carbon content of the sealing material layer 5 into the range of 50-200 ppm by mass ratio, it is applicable.

  Regarding the method (1) described above, for example, an organic substance such as alcohol is added as a carbon source when the glass is crushed. In this method, alcohol or the like also acts as a grinding aid, so that the glass grinding efficiency can be increased. The carbon source added to the sealing glass is not limited to an organic substance, and may be carbon such as carbon black or graphite. Even if the amount of carbon source such as organic matter or carbon added to the sealing glass is constant, the amount of carbon varies depending on the firing conditions, so the correlation between how much the pre-added carbon source remains after firing is calculated. . Based on this, the carbon content of the sealing material layer 5 is controlled. Alternatively, the amount of carbon may be controlled by changing the firing conditions (temperature, time) while keeping the amount of carbon source added constant.

  The method (2) is a method in which a part of carbon derived from the binder component (organic resin) of the vehicle and the organic solvent used in making the paste is left without adding a carbon source to the sealing glass. In this case, the composition of the vehicle, the composition ratio between the sealing glass material and the vehicle when making the paste, the firing conditions, particularly the temperature rise rate in the temperature range from the temperature range where the resin burns and decomposes to the softening of the sealing glass And retention time is important. The vehicle used for the preparation of the sealing material paste is not particularly limited when the method (1) is applied, but when the method (2) is applied, a cellulosic resin, particularly nitrocellulose is added to terpineol, butyl. It is preferable to use those dissolved in an organic solvent such as carbitol acetate or ethyl carbitol acetate.

  The vehicle used in the method (2) is 1.5 to 5% by mass of nitrocellulose, any one organic solvent selected from terpineol, butyl carbitol acetate and ethyl carbitol acetate, or a mixture of two or more. The solvent is preferably dissolved in 95 to 99.5% by mass of the solvent. Further, for making the sealing glass material into a paste, it is preferable to prepare a sealing material paste by mixing 70 to 90% by mass of the sealing glass material with 10 to 30% by mass of the vehicle. By using such a vehicle or sealing material paste, the controllability of the residual carbon amount of the sealing material layer 5 is improved.

  With respect to the firing process of the sealing material paste coating layer, generally, conditions that allow the resin component to be completely decomposed and burned are applied so as not to reduce the glass material for sealing. Specifically, the resin is decomposed by slowing the heating rate in the temperature range below the temperature at which the sealing glass softens and flows above the temperature at which the resin decomposes and burns, or by holding for about 1 to 15 hours, It promotes combustion. When the method (2) is applied, an appropriate amount of carbon is left in the sealing material layer 5 by controlling the decomposition and combustion processes of the resin.

  As described above, nitrocellulose is preferred as the resin component in the vehicle. Nitrocellulose decomposes and burns at temperatures in the range of 200-250 ° C. For example, the temperature at which the tin-phosphate glass frit softens and flows is in the range of 260 to 400 ° C. For this reason, the temperature range of 200-400 degreeC becomes important. The sealing material layer 5 containing carbon as described above can be obtained by controlling the temperature rising rate of 200 to 400 ° C. Specifically, it is preferable to raise the temperature range of 200 to 400 ° C. at a rate of 10 to 25 ° C./min. When firing in a batch furnace or the like, in order to keep the temperature in the furnace uniform, it is preferable that the holding time be less than 50 minutes when the temperature is kept in a temperature range of 200 to 400 ° C.

  Next, as shown to Fig.2 (a), the 2nd glass substrate 3 which has the sealing material layer 5, and the 1st glass substrate 2 which has the element formation area 2a provided with the electronic device produced separately from it, Is used to manufacture an electronic device 1 such as an OELD, PDP, LCD or other FPD, an illumination device using an OEL element, or a solar cell such as a dye-sensitized solar cell. That is, as shown in FIG. 2B, the first glass substrate 2 and the second glass substrate 3 are arranged such that the surface having the element formation region 2a and the surface having the sealing material layer 5 face each other. Laminate. A gap is formed on the element formation region 2 a of the first glass substrate 2 based on the thickness of the sealing material layer 5.

Next, as shown in FIG. 2C, the sealing material layer 5 is irradiated with an electromagnetic wave 6 such as a laser beam or an infrared ray through the second glass substrate 3 (or the first glass substrate 2). When laser light is used as the electromagnetic wave 6, the laser light is irradiated while scanning along the frame-shaped sealing material layer 5.
The laser light is not particularly limited, and laser light from a semiconductor laser, carbon dioxide laser, excimer laser, YAG laser, HeNe laser, or the like is used.

  The output of the laser beam is appropriately set according to the thickness of the sealing material layer 5 and the like, but the heating temperature (processing temperature) of the sealing material layer 5 is in the range of 500 to 800 ° C. It is preferable to apply an output (for example, an output in the range of 25 to 85 W). If the heating temperature of the sealing material layer 5 is less than 500 ° C., bubbles may not be sufficiently grown when the sealing material layer 5 is melted. On the other hand, when the heating temperature of the sealing material layer 5 exceeds 800 ° C., cracks and cracks are likely to occur in the glass substrates 2 and 3 during heating.

  The sealing material layer 5 is melted in order from the portion irradiated with the laser beam scanned along the sealing material layer 5, and is rapidly cooled and solidified and fixed to the first glass substrate 2 at the end of the laser beam irradiation. And sealing which seals between the 1st glass substrate 2 and the 2nd glass substrate 3 as shown in FIG.2 (d) by irradiating a laser beam over the perimeter of the sealing material layer 5 Layer 4 is formed. Since the sealing material layer 5 grows when bubbles are melted to suppress a decrease in film thickness, it is possible to suppress cracking of the glass substrates 2 and 3, cracking and peeling of the sealing layer 4, peeling of the thin film 7, and the like. Become.

  In this way, an electronic device 1 in which an electronic element formed in the element formation region 2a is hermetically sealed with a glass panel constituted by the first glass substrate 2, the second glass substrate 3, and the sealing layer 4 is formed. Make it. The reliability of the electronic device 1 depends on the hermetic sealing property by the sealing layer 4 and the adhesive strength between the glass substrates 2 and 3 and the sealing layer 4. According to this embodiment, since the hermetic sealing property and the adhesive strength can be increased, it is possible to obtain the electronic device 1 having excellent reliability. The glass panel whose inside is hermetically sealed is not limited to the electronic device 1 but can be applied to a sealed body of electronic components or a glass member (building material or the like) such as vacuum pair glass.

  Next, specific examples of the present invention and evaluation results thereof will be described. In addition, the following description does not limit this invention, The modification | change in the form along the meaning of this invention is possible.

Example 1
Tin having the composition of SnO 55.7%, SnO ₂ 3.1%, P ₂ O ₅ 32.5%, ZnO 4.8%, Al ₂ O ₃ 2.3%, SiO ₂ 1.6% in terms of mol% - phosphate glass frit (glass transition point = 280 ° C.), zirconium phosphate as a low expansion filler _{((ZrO) 2 P 2 O} 7) _{powder, Fe 2 O 3 -Cr 2 O} 3 -Co 2 O 3 - A MnO-based laser absorber (average particle size = 2 μm) was prepared. Further, 4% by mass of nitrocellulose as a binder component was dissolved in 96% by mass of a solvent made of butyl carbitol acetate to prepare a vehicle.

Next, 51 vol% of the tin-phosphate glass frit described above, 45.2 vol% of the zirconium phosphate powder, and 3.8 vol% of the laser absorbing material are mixed to be sealed (thermal expansion coefficient: 45 × 10 ⁻⁷ / ° C.). A sealing material paste was prepared by mixing 84% by mass of the glass material for sealing with 16% by mass of the vehicle. Next, a sealing material paste is applied to the outer peripheral region of the second glass substrate (dimension: 90 × 90 × 0.7 mmt) made of alkali-free glass (thermal expansion coefficient: 38 × 10 ⁻⁷ / ° C.) by screen printing. After coating (line width: 500 μm), drying was performed at 120 ° C. for 10 minutes. An FTO film is formed on the surface of the second glass substrate.

The coating layer of the sealing material paste after drying was heated to 250 ° C. at a temperature rising rate of 15 ° C./min, and kept at this temperature for 5 minutes to decompose and burn the binder (nitrocellulose) (hereinafter this treatment). Is called binder removal treatment), the temperature is raised to 350 ° C. at a rate of temperature rise of 15 ° C./min, and further raised from 350 ° C. (softening point) to 430 ° C. at a rate of temperature rise of 50 ° C./min. Baked for a minute. In this way, the film thickness T ₁ is to form a sealing material layer of 57 .mu.m.

  Air bubbles having a size (major axis) of 5 to 10 μm were present in a volume ratio of 15% in the sealing material layer by the above-described sealing material layer forming step. The volume ratio and size of the bubbles were measured by SEM observation of the cross section of the sealing material layer. The carbon content of the sealing material layer was 200 ppm. The carbon content of the sealing material layer is a value measured using a carbon / sulfur analyzer EMIA-320V (trade name, manufactured by HORIBA, Ltd.). The same applies to the other embodiments.

  The second glass substrate having the sealing material layer described above and the first glass substrate having an element formation region (a glass substrate with an FTO film made of non-alkali glass having the same composition and shape as the second glass substrate). Laminated. Next, the sealing material layer is irradiated with a laser beam having a wavelength of 940 nm and an output of 36 W at a scanning speed of 10 mm / s through the second glass substrate to melt and quench and solidify the sealing material layer. The glass substrate and the second glass substrate were sealed. The processing temperature at the time of laser irradiation of the sealing material layer was 650 ° C. (measured with a radiation thermometer).

The film thickness T _{2 of} the sealing layer (melting / solidifying layer of the sealing material layer), the ratio of the film thickness T ₂ of the sealing layer to the film thickness T ₁ of the sealing material layer (T ₂ / T ₁ ), sealing Cross-sectional observation of the sealing layer by SEM with respect to the volume ratio and size (major axis) of bubbles in the adhesion layer, and the ratio of the volume V ₂ of the sealing layer to the volume V ₁ of the sealing material layer (V ₂ / V ₁ ) I asked for it. As a result, the film thickness T ₂ of the sealing layer was 58 μm, the film thickness ratio (T ₂ / T ₁ ) was 1.02, the volume ratio (V ₂ / V ₁ ) was 1.08, and the volume ratio of bubbles was 20 %, The bubble size (major axis) was 15 to 20 μm. The volume ratio is a value obtained as a cross-sectional area ratio between the sealing material layer and the sealing layer. Such an electronic device was subjected to characteristic evaluation described later.

(Examples 2 to 5)
Table 1 shows the time for performing the binder removal processing on the sealing material layer (hereinafter referred to as “binder removal time”), the output of the laser beam irradiated to the sealing material layer, and the processing temperature of the sealing material layer based on the output. Except for the change, a sealing material layer forming step for the second glass substrate and a laser sealing step for the first glass substrate and the second glass substrate were performed in the same manner as in Example 1. Carbon content of sealing material layer, film thickness T ₁ , T ₂ , film thickness ratio (T ₂ / T ₁ ) of sealing material layer and sealing layer, volume ratio and size (major axis) of bubbles, volume ratio ( V ₂ / V ₁ ) was measured in the same manner as in Example 1. The measurement results are as shown in Table 1. Such an electronic device was subjected to characteristic evaluation described later.

(Example 6)
78% by volume of tin-phosphate glass frit having the same composition as in Example 1, 20% by volume of cordierite powder and 2% by volume of laser absorber were mixed and sealed (thermal expansion coefficient: 72 × 10 ^−7). / ° C.). A sealing material paste was prepared by mixing 84% by mass of the glass material for sealing with 16% by mass of the vehicle. Next, the sealing material paste is applied to the outer peripheral region of the second glass substrate (size: 100 × 100 × 1.1 mmt) with the FTO film made of soda lime glass (thermal expansion coefficient: 87 × 10 ⁻⁷ / ° C.). After applying by screen printing (line width: 500 μm), a drying step, a binder removal step, and a firing step were performed under the same conditions as in Example 1.

The second glass substrate having the sealing material layer described above and the first glass substrate having an element formation region (a glass substrate with an FTO film made of soda lime glass having the same composition and shape as the second glass substrate). Laminated. Next, the sealing material layer is irradiated with a laser beam having a wavelength of 940 nm and an output of 25 W through the second glass substrate at a scanning speed of 5 mm / s to melt and rapidly cool and solidify the sealing material layer. The glass substrate and the second glass substrate were sealed. Carbon content of sealing material layer, film thickness T ₁ , T ₂ , film thickness ratio (T ₂ / T ₁ ) of sealing material layer and sealing layer, volume ratio and size (major axis) of bubbles, volume ratio ( V ₂ / V ₁ ) was measured in the same manner as in Example 1. The measurement results are as shown in Table 2. Such an electronic device was subjected to characteristic evaluation described later.

(Comparative Examples 1-2)
Using a glass material for sealing (thermal expansion coefficient = 72 × 10 ⁻⁷ / ° C.) using a bismuth-based glass frit (glass transition point = 360 ° C.), the second glass substrate was applied in the same manner as in Example 6. The formation process of the sealing material layer and the laser sealing process of the 1st glass substrate and the 2nd glass substrate were implemented. In the sealing material layer forming step, the temperature is first raised to 250 ° C. at a heating rate of 5 ° C./min, held at this temperature for 5 minutes to remove the binder, and then increased to 460 ° C. at a heating rate of 5 ° C./min. The temperature was raised and the temperature was maintained for 10 minutes. Carbon content of sealing material layer, film thickness T ₁ , T ₂ , film thickness ratio (T ₂ / T ₁ ) of sealing material layer and sealing layer, volume ratio and size (major axis) of bubbles, volume ratio ( V ₂ / V ₁ ) is as shown in Table 2. Such an electronic device was subjected to characteristic evaluation described later. Comparative Example 1 is an example using a glass substrate having no FTO film.

(Comparative Examples 3-4)
Except changing the formation process of a sealing material layer as follows, it forms the sealing material layer with respect to a 2nd glass substrate like Example 1, and a 1st glass substrate and a 2nd glass substrate Laser sealing was performed. In the step of forming the sealing material layer, first, the dried application layer of the sealing material paste was heated to 250 ° C. at a heating rate of 5 ° C./min, and this temperature was 30 minutes (Comparative Example 3) and 60 minutes ( Comparative Example 4) After holding and removing the binder, the temperature was raised to 430 ° C. at a temperature rising rate of 5 ° C./min, and this temperature was held for 10 minutes. Carbon content of sealing material layer, film thickness T ₁ , T ₂ , film thickness ratio (T ₂ / T ₁ ) of sealing material layer and sealing layer, volume ratio and size (major axis) of bubbles, volume ratio ( V ₂ / V ₁ ) is as shown in Table 2. Such an electronic device was subjected to characteristic evaluation described later.

  Next, regarding the appearance of the glass panels of Examples 1 to 6 and Comparative Examples 1 to 4, the presence or absence of cracks in the glass substrate, the presence or absence of cracks in the sealing layer, and the presence or absence of peeling of the FTO film were evaluated. The appearance was evaluated by observing with an optical microscope. Moreover, the airtightness of each glass panel was measured. The airtightness was evaluated by applying a helium leak test. These measurement / evaluation results are shown in Tables 1 and 2. Tables 1 and 2 also show the manufacturing conditions of the glass panel.

  As is clear from Table 1 and Table 2, the glass panels according to Examples 1 to 6 are excellent in airtightness because neither the glass substrate nor the sealing layer cracks or the FTO film was peeled off. I understand. This is because bubbles grow in the melting process of the sealing material layer, and a decrease in the thickness of the sealing material layer is suppressed. On the other hand, in Comparative Example 1 using a glass substrate having no FTO film, a crack occurs in the glass substrate, and in Comparative Examples 2 to 4 using a glass substrate having an FTO film, peeling occurs in the FTO film. It can be seen that the adhesion state and airtightness of the adhesion layer are impaired.

The glass member with a sealing material layer of the present invention produces a flat panel display device or a solar cell panel having a structure in which a display element or a solar cell element is sealed between two glass substrates arranged opposite to each other. Therefore, it is useful as a glass substrate used for this purpose. The electronic device of the present invention is a flat display device or a solar battery panel having the above structure.
The entire contents of the specification, claims, drawings, and abstract of Japanese Patent Application No. 2009-113282 filed on May 8, 2009 are cited herein, and the disclosure of the specification of the present invention is disclosed as follows. Incorporated.

  DESCRIPTION OF SYMBOLS 1 ... Electronic device, 2 ... 1st glass substrate, 2a ... Element formation area, 2b ... 1st sealing area, 3 ... 2nd glass substrate, 3a ... 2nd sealing area, 4 ... Sealing layer 5 ... Sealing material layer, 6 ... Electromagnetic wave, 7 ... Thin film.

Claims (15)

A glass substrate having a sealing region;
Provided on the sealing region of the glass substrate, comprising a sealing material layer composed of a fired layer of a sealing glass material containing a sealing glass, a low expansion filler and an electromagnetic wave absorbing material,
The said sealing material layer contains the carbon of the range of 50-200 ppm by mass ratio while containing the bubble of the range of 10-30% by a volume ratio, The glass member with a sealing material layer characterized by the above-mentioned.   The glass member with a sealing material layer according to claim 1, wherein the size of the bubbles is in the range of 0.1 to 50 µm.   The low expansion filler is at least one selected from silica, alumina, zirconia, zirconium silicate, cordierite, zirconium phosphate compound, soda lime glass and borosilicate glass, and the sealing glass material is the low expansion glass. The glass material with a sealing material layer according to claim 1 or 2, wherein the filler is contained in a volume ratio of 1 to 50%.   The electromagnetic wave absorbing material is made of at least one metal selected from Fe, Cr, Mn, Co, Ni, and Cu or a compound containing the metal, and the glass material for sealing has a volume ratio of the electromagnetic wave absorbing material of 0.0. It contains in 1 to 10% of range, The glass member with a sealing material layer of any one of Claim 1 thru | or 3 characterized by the above-mentioned.   The glass member with a sealing material layer according to any one of claims 1 to 4, wherein the sealing glass is made of tin-phosphate glass.   A sealing glass material layer containing a sealing glass, a low expansion filler and an electromagnetic wave absorbing material is formed on the sealing region of the glass substrate having a sealing region, and then the sealing glass material layer is baked. And producing a glass member with a sealing material layer characterized by comprising a sealing material layer containing carbon in the range of 50 to 200 ppm by mass while containing bubbles in the range of 10 to 30% by volume. Method. A first glass substrate having an element formation region including an electronic element, and a first sealing region provided on an outer peripheral side of the element formation region;
The first glass substrate has a second sealing region corresponding to the first sealing region, and the surface having the second sealing region has the first sealing of the first glass substrate. A second glass substrate disposed to face the surface having a stop region;
Formed between the first sealing region and the second sealing region so as to seal between the first glass substrate and the second glass substrate; Comprising a sealing layer composed of a melt-fixed layer of a glass material for sealing containing an expansion filler and an electromagnetic wave absorbing material;
The electronic device is characterized in that the sealing layer contains bubbles in a range of 10 to 35% by volume and the size of the bubbles is in a range of 0.1 to 100 μm.   At least one of the first glass substrate and the second glass substrate is formed on a surface having the sealing region, and has at least one thin film selected from a conductive film and an insulating film. Item 8. The electronic device according to Item 7. Preparing a first glass substrate having an element forming region including an electronic element and a first sealing region provided on an outer peripheral side of the element forming region;
A second sealing region corresponding to the first sealing region of the first glass substrate; and a sealing glass, a low expansion filler, and an electromagnetic wave absorbing material formed on the second sealing region; And a sealing material layer containing carbon in the range of 50 to 200 ppm by mass and containing bubbles in the range of 10 to 30% by volume. Prepare two glass substrates,
The sealing material layer is placed on the first glass substrate and the second glass substrate so that the surface having the first sealing region and the surface having the second sealing region face each other. Laminated through
Next, the sealing material layer is irradiated with electromagnetic waves through the first glass substrate or the second glass substrate and locally heated to melt the sealing material layer and the first glass substrate and the Forming a sealing layer that seals between the second glass substrate;
The manufacturing method of the electronic device characterized by the above-mentioned.   10. The method of manufacturing an electronic device according to claim 9, wherein the size of the bubbles present in the sealing material layer is in the range of 0.1 to 50 [mu] m.   The electron according to claim 9 or 10, wherein the sealing layer includes bubbles in a volume ratio of 10 to 35%, and the size of the bubbles is in a range of 0.1 to 100 µm. Device manufacturing method. Film thickness _{T 1} of the said sealing material layer, when the thickness of the sealing layer was _{T 2,} the sealing layer has a thickness _{T 2} of the range of 0.9 T ₁ or 1.1 T ₁ less The method of manufacturing an electronic device according to claim 9, wherein the electronic device is manufactured as described above. When the volume of the sealing material layer is V ₁ and the volume of the sealing layer is V ₂ , the sealing layer has a volume V _{2 in} the range of more than 1V ₁ and not more than 1.15V _1. The method for manufacturing an electronic device according to claim 9, wherein:   At least one of the first glass substrate and the second glass substrate is formed on a surface having the sealing region, and has at least one thin film selected from a conductive film and an insulating film. The method for manufacturing an electronic device according to any one of claims 9 to 13.   The method for manufacturing an electronic device according to claim 9, wherein the sealing material layer is melted by irradiating a laser beam.

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