TW201043586A - Glass member with sealing material layer, electronic device using same, and manufacturing method thereof - Google Patents

Glass member with sealing material layer, electronic device using same, and manufacturing method thereof Download PDF

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Publication number
TW201043586A
TW201043586A TW099114643A TW99114643A TW201043586A TW 201043586 A TW201043586 A TW 201043586A TW 099114643 A TW099114643 A TW 099114643A TW 99114643 A TW99114643 A TW 99114643A TW 201043586 A TW201043586 A TW 201043586A
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Taiwan
Prior art keywords
sealing
glass
glass substrate
material layer
layer
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TW099114643A
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Chinese (zh)
Inventor
Sohei Kawanami
Asahi Ide
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Asahi Glass Co Ltd
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Publication of TW201043586A publication Critical patent/TW201043586A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06Joining glass to glass by processes other than fusing
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J17/00Gas-filled discharge tubes with solid cathode
    • H01J17/02Details
    • H01J17/18Seals between parts of vessels; Seals for leading-in conductors; Leading-in conductors
    • H01J17/183Seals between parts of vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J5/00Details relating to vessels or to leading-in conductors common to two or more basic types of discharge tubes or lamps
    • H01J5/20Seals between parts of vessels
    • H01J5/22Vacuum-tight joints between parts of vessel
    • H01J5/24Vacuum-tight joints between parts of vessel between insulating parts of vessel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/26Sealing together parts of vessels
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/24Manufacture or joining of vessels, leading-in conductors or bases
    • H01J9/26Sealing together parts of vessels
    • H01J9/261Sealing together parts of vessels the vessel being for a flat panel display
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/048Encapsulation of modules
    • H01L31/0488Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8722Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • H01J2329/86Vessels
    • H01J2329/867Seals between parts of vessels
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Glass Compositions (AREA)
  • Joining Of Glass To Other Materials (AREA)
  • Electroluminescent Light Sources (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
  • Gas-Filled Discharge Tubes (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

The purpose of the present invention is to suppress cracking and breaking of a glass substrate and to suppress separation of a thin film that is formed on the surface of the glass substrate, when the glass substrate is subjected to local heat sealing such as laser sealing. Specifically, a glass substrate (3) has a sealing region. The sealing region is provided with a sealing material layer (5) which is composed of a fired layer of a sealing glass material that contains a sealing glass, a low expansion filler and an electromagnetic wave absorbing material. The sealing material layer (5) contains 10-30% by volume of air bubbles, while containing 50-200 ppm by mass of carbon. The glass substrate (3) and a glass substrate (2), which has an element formation region that is provided with an electronic element, are laminated, and then the space between the glass substrates (2, 3) is sealed by melting the sealing material layer (5) by irradiating the sealing material layer (5) with an electromagnetic wave (6) such as laser light.

Description

201043586 六、發明說明: 【發明所屬之_技術領域】 發明領域 本發明關於具有密封材料層之破璃構件與使用該玻璃 構件之電子裝置及其製造方法。 L· 發明背景 有機 EL 顯示器(Organic Electro-Luminescence Display : OELD)、電漿顯示面板(pDP)、液晶顯示裝置(lcd) 等平板型顯示器裝置(FPD) ’係具有下述構造:將形成有發 光元件等顯示元件的元件用玻璃基板與密封用玻璃基板呈 相對向配置’再利用該等2片玻璃基板密封的玻璃封裝件, 將顯示元件施行密封而得的構造(參照專利文獻1)。此外, 諸如色素增感型太陽電池之類的太陽電池,亦有就利用2片 玻璃基板將太陽電池元件予以密封的玻璃封裝件之適用進 行檢討(參照專利文獻2)。 將2片玻璃基板間予以密封的密封材料係使用密封樹 脂或密封玻璃。由於有機EL(OEL)元件等會因水分而容易 劣化,因此推薦使用耐濕性等優異的密封玻璃。因為利用 密封玻璃施行的密封溫度係400〜600°C左右,所以在使用燒 成爐施行加熱處理時,會導致OEL元件等電子元件部的特 性劣化。因此’有嘗試在2片玻璃基板周邊部所設置之密封 區域間’配置含有雷射吸收材的密封用玻璃材料層,再對 其施行雷射光照射,使密封用玻璃材料層局部性加熱•熔 201043586 融而密封(參照專利文獻1、2)。 利用雷射照射施行的密封(雷射密封)係可抑制對電子 元件部的熱影響,但就另一方面而言會有在密封時造成玻 璃基板發生龜裂、破碎等情形’又會造成在破璃基板表面 上所形成的佈線層(導電膜)等容易發生剝離的缺點。當應用 雷射密封時,首先在密封用玻璃基板的密封區域中將含雷 射吸收材的密封用玻璃材料燒附,而形成框狀密封用玻璃 材料層。接著,將密封用玻璃基板與元件用玻璃基板隔著 密封用玻璃材料層進行積層後,再從密封用玻璃基板側照 射雷射光,使密封用玻璃材料層加熱、熔融而將玻璃基板 間予以密封。 雷射光係沿框狀密封用玻璃材料層一邊進行掃描一邊 進行照射。密封用玻璃材料層係雷射光的照射部分被局部 性加熱而炫融,並自雷射光照射結束的時點起被急冷而固 化。此時,密封用玻璃材料層係伴隨30〜50%左右之膜厚減 少而進行熔融.固化。由於密封用玻璃材料層的膜厚減少 係在雷射光的照射部分呈局部性連續發生,因此會以剝離 力的型式作用於玻璃基板表面上所形成的佈線層等。結 果,會發生佈線層等的剝離、及隨此現象而衍生的氣密性 降低等問題。進一步而言,對玻璃基板會施加基於密封用 玻璃材料層所減少之膜厚部分的應力。由於該應力係對局 部急劇施加,因此玻璃基板容易發生龜裂、破碎等。 依此在2片玻璃基板間的密封應用雷射密封等局部加 熱密封時,隨熔融•固化時的密封用玻璃材料層之膜厚減 201043586 少’會有包括形成於其表面之佈線層等在内,於玻璃基板 發生各種不良情況之疑慮。即,密封用玻璃材料層的膜厚 減少將成為玻璃基板自體之龜裂與破碎、以及形成於玻璃 基板表面之佈線層等薄膜之剝離的發生肇因。因該等情 形’會造成諸如OELD、PDP、LCD等FPD、或太陽電池的 氣密性與可靠度降低。 Ο Ο 先行技術文獻 專利文獻 專利文獻1:曰本專利特表2006-524419號公報 專利文獻2:曰本專利特開2008-115057號公報 C發明内容:j 發明概要 發明欲解決之課題 本發明目的在於提供一種具有密封材料層之玻璃構 件,其係在對2片玻璃基板間的密封使用局部加熱時,可藉 由抑制玻璃基板發生龜裂與破碎等不良情況,來提高玻璃 基板間的密封性與其可靠度者;-種該具有密封材料層之 坡璃構件的t造方法’以及—種氣密性與其可靠度經提高 電子裝置及其製造方法’其係藉由進―步使用此種具有 密封材料層之《構·提高錢錄與其可靠度者。 用以欲解決課題之手段 本教月,。、樣的具有岔封材料層之玻璃構件,其特徵在 於具備有玻璃基板與密封絲BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass member having a sealing material layer and an electronic device using the same and a method of manufacturing the same. L. BACKGROUND OF THE INVENTION A flat panel display device (FPD) such as an organic electro-luminescence display (OELD), a plasma display panel (pDP), or a liquid crystal display device (LCD) has the following structure: light is formed A glass package in which the glass substrate and the sealing glass substrate are disposed in a direction in which the glass substrate is sealed with the two glass substrates, and the display element is sealed (see Patent Document 1). In addition, a solar cell such as a dye-sensitized solar cell has been examined for the application of a glass package in which a solar cell element is sealed by two glass substrates (see Patent Document 2). A sealing material for sealing between two glass substrates is a sealing resin or a sealing glass. Since an organic EL (OEL) element or the like is easily deteriorated by moisture, it is recommended to use a sealing glass excellent in moisture resistance and the like. Since the sealing temperature by the sealing glass is about 400 to 600 °C, when the heat treatment is performed using a baking furnace, the characteristics of the electronic component such as the OEL element are deteriorated. Therefore, there is an attempt to arrange a layer of sealing glass material containing a laser absorbing material between the sealing regions provided in the peripheral portions of the two glass substrates, and then irradiate the laser light to locally heat and melt the sealing glass material layer. 201043586 Sealed and sealed (refer to Patent Documents 1, 2). The seal (laser seal) applied by laser irradiation can suppress the thermal influence on the electronic component portion, but on the other hand, the glass substrate may be cracked or broken during sealing, which may cause A wiring layer (conductive film) formed on the surface of the glass substrate is likely to be peeled off. When a laser seal is applied, first, a sealing glass material containing a laser absorbing material is fired in a sealing region of a sealing glass substrate to form a frame-like sealing glass material layer. Then, the glass substrate for sealing and the glass substrate for the element are laminated via a glass material layer for sealing, and then the laser light is irradiated from the side of the glass substrate for sealing, and the glass material layer for sealing is heated and melted to seal the glass substrate. . The laser light is irradiated while scanning along the glass material layer for frame sealing. The irradiated portion of the glass material layer for sealing is locally heated and swelled, and is rapidly cooled and solidified from the point of completion of the laser light irradiation. At this time, the glass material layer for sealing is melted and solidified with a decrease in film thickness of about 30 to 50%. Since the film thickness of the glass material layer for sealing is locally generated continuously in the irradiated portion of the laser light, the wiring layer formed on the surface of the glass substrate or the like is applied in a pattern of peeling force. As a result, problems such as peeling of the wiring layer and the like, and deterioration of airtightness derived from this phenomenon occur. Further, a stress based on the film thickness portion reduced by the sealing glass material layer is applied to the glass substrate. Since the stress is applied to the local portion abruptly, the glass substrate is liable to be cracked or broken. According to this, when the partial heat sealing such as a laser seal is applied to the sealing between the two glass substrates, the film thickness of the sealing glass material layer at the time of melting and solidification is reduced by 201043586, and the wiring layer formed on the surface thereof may be included. Inside, there are various doubts about various adverse conditions on the glass substrate. In other words, the decrease in the thickness of the glass material layer for sealing causes the occurrence of cracking and breakage of the glass substrate itself, and peeling of the film formed on the surface of the glass substrate or the like. These conditions will cause the airtightness and reliability of FPDs such as OELD, PDP, LCD, etc., or solar cells to decrease. Ο Ο 技术 技术 文献 Ο 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2006 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 It is to provide a glass member having a sealing material layer which can improve the sealing property between the glass substrates by suppressing the occurrence of cracks and breakage of the glass substrate when local heating is used for sealing between the two glass substrates. And the reliability thereof; the t-making method of the glass member having the sealing material layer, and the improved airtightness and reliability thereof, and the method for manufacturing the same, which are used by further The structure of the sealing material layer, the improvement of the money record and its reliability. The means used to solve the problem. a glass member having a layer of a sealing material, characterized by having a glass substrate and a sealing wire

封材抖層,而該玻璃基板係具有密 封區域;該密封材料層传A 牙〜又置於前述玻璃基板的前述密封 5 201043586 區域上’且由含有密封麵、低膨脹填充材及電磁波吸收 材的密封用玻璃材料之燒成層構成;其中,前迷密封材料 層係含有依體積比例計10〜30%範圍的氣泡,且含有依質量 比例計50〜200ppm範圍的碳。 本發明悲、樣的具有密封材料層之玻璃構件的製造方 法,其特徵在於:在具有密封區域的玻璃基板之前述密封 區域上,形成含有密封玻璃、低膨脹填充材及電磁波吸收 材的密封用玻璃材料層,接著,將前述密封用破璃材料層 進行燒成,而形成含有依體積比例計1〇〜3〇%範圍之氣泡, 且含有依質量比例計50〜200ppm範圍之碳的密封材料層。 本發明態樣的電子裝置,其特徵在於具備有:第1玻璃 基板、第2玻璃基板、及密封層,而該第1玻璃基板係具有: 具有電子元件的元件形成區域、及設於前述元件形成區域 外周側的第1密封區域;該第2玻璃基板係具有對應於前述 第1玻璃基板之前述第1密封區域的第2密封區域,且其具有 前述第2密封區域的表面係被配置成與前述第丨玻璃基板具 有前述第1密封區域的表面呈相對向;該密封層係依將前述 第1玻璃基板與前述第2玻璃基板之間施行密封的方式,形 成於前述第1密封區域與前述第2密封區域之間,且由含有 密封玻璃、低膨脹填充材及電磁波吸收材的密封用玻璃材 料之熔融固定層所構成;其中,前述密封層係含有依體積 比例計為10〜35%範圍的氣泡,且前述氣泡的大小係〇. 1〜丨00 μηι範圍。 本發明態樣的電子裝置之製造方法,其特徵在於:準 201043586 備第1玻璃基板,其中該第1玻璃基板係具有:具有電子元 件的元件形成區域、及設於前述元件形成區域外周側的第1 密封區域;準備第2玻璃基板’其中該第2玻璃基板係具有 第2密封區域與密封材料層;該第2密封區域係對應於前述 第1玻璃基板之前述第1密封區域;而該密封材料層係形成 於前述第2密封區域上,且由含有密封玻璃、低膨脹填充材 及電磁波吸收材的密封用玻璃材料之燒成層構成,並含有 依體積比例計10〜30°/。範圍的氣泡,且含有依質量比例計 〇 50〜200ppm範圍的碳;將前述第1玻璃基板與前述第2玻璃 基板’依具有前述第1密封區域的表面與具有前述第2密封 區域的表面呈相對向的方式’隔著前述密封材料層進行積 . 層;接著’透過前述第1玻璃基板或前述第2玻璃基板,將 電磁波照射於前述密封材料層而進行局部性加熱,使前述 密封材料層熔融,而形成將前述第1玻璃基板與前述第2玻 螭基板之間加以密封的密封層。 Q 發明效果 根據本發明態樣的具有密封材料層之玻璃構件及其製 造方法’可重現性佳地抑制使用局部加熱施行密封時,玻 填基板發生龜裂與破碎等不良情況。所以,根據本發明態 樣的電子裝置及其製造方法,便可使氣密性與其可靠度提 升。 圖式簡單說明 第1圖係表示本發明實施形態的電子裝置構造之剖視 圖。 7 201043586 第2(a)〜(d)圖係表示本發明實施形態的電子裝置之製 造步驟的剖視圖。 第3圖係表示第2圖所示電子裝置的製造步驟中,所使 用之第1玻璃基板的平面圖。 第4圖係第3圖的沿a-A線之剖視圖。 第5圖係第2圖所示電子裝置的製造步驟中,所使用之 第2玻璃基板的平面圖。 第6圖係第5圖的沿a-A線之剖視圖。 第7圖係將第2圖所示之第1與第2玻璃基板放大表示的 刳視圖。 第8圖係將第1圖所示之電子裝置放大表示的剖視圖。 I:實施方式孺 用以實施發明之形態 以下’針對為實施本發明的形態,參照圖式進行說明。 第1圖所示係本發明實施形態的電子裝置之構造圖,第2圖 所示係電子裝置的製造步驟圖,第3圖至第6圖所示係其所 使用的第1與第2玻璃基板之構造圖,第7圖所示係將第1與 第2玻璃基板其中一部分放大表示之剖視圖,第8圖所示係 將電子裝置其中一部分放大表示之剖視圖。第1圖所示電子 裝置1係構成諸如OELD、PDP、LCD等使用FPD、OEL元件 等發光元件的照明裝置,或者構成諸如色素增感型太陽電 池之類太陽電池等之物。 電子裝置1係具備有第1玻璃基板(元件用玻璃基板)2、 及第2玻璃基板(密封用玻璃基板)3。該第1玻璃基板(元件用 201043586 玻璃基板)2係設有具備電子元件的元件形成區域2&。第1與 第2玻璃基板2、3係由例如無鹼玻璃或鈉鈣玻璃等構成。無 鹼玻璃係具有35〜40(x 10_VC )左右的熱膨脹係數。鈉鈣玻璃 係具有85〜9〇(x1〇-7/°C)左右的熱膨脹係數。 在第1破璃基板2的元件形成區域2&中,將形成對應於 電子裝置1的電子元件,例如若為OELD或〇EL照明則形成 OEL兀件,若為PDP則形成電漿發光元件,若為LCD則形成 液晶顯不元件’若為太陽電池則形成色素增感型光電轉換 部等。諸如OEL元件之類的發光元件、或諸如色素增感型 光電轉換部之類的太陽電池元件等之電子元件,係具備有 各種公知構造,而非僅侷限於該等元件構造者。 第1玻璃基板2係如第3圖與第4圖所示,具有在元件形 成區域2a的外周側所設置的第i密封區域21^第i密封區域 2b係設定為包圍元件形成區域2a的狀態。第2玻璃基板3係 如第5圖與第6圖所示,具有第2密封區域3a。第2密封區域 3a係對應於第1密封區域2b者。即,當將第1玻璃基板2與第 2玻璃基板3呈相對向配置時,便將第1密封區域2b與第2密 封區域3a設定為呈相對面狀態,並如後述,成為密封層4的 形成區域(就第2玻璃基板3而言則為密封材料層5的形成區 域)。 第1玻璃基板2與第2玻璃基板3係依使具有密封區域 2b、3a的表面呈相對向,且依例如在元件形成區域2a上形 成間隙的方式配置。在太陽電池元件等中,亦會有在元件 形成區域2a上不形成間隙的情況。第1玻璃基板2與第2玻璃 9 201043586 基板3之間的空間係利用密封層4進行密封。即,密封層4係 將第1玻璃基板2的密封區域2b、與第2玻璃基板3的密封區 域3a之間,依在玻璃基板2、3間形成間隙的情況下予以密 封之方式形成。在元件形成區域23中所形成的電子元件係 利用由第1玻璃基板2、第2玻璃基板3及密封層4所構成的玻 璃面板進行氣密密封。 密封層4係由熔融固接層所構成者,該熔融固接層係使 在第2玻璃基板3的密封區域3a上所形成之密封材料層5熔 融而固接於第1玻璃基板2的密封區域2b而成。密封材料層5 係藉由使用雷射光或紅外線等電磁波6的局部加熱而熔 融。即,在用於製作電子裝置丨之第2玻璃基板3的密封區域 3a中,如第5圖與第6圖所示,形成框狀密封材料層5。使在 第2玻璃基板3的密封區域3a中所形成的密封材料層5 ,利用 雷射光或紅外線等電磁波6的熱,而熔融固接於第丨玻璃基 板2的岔封區域2b,藉此形成將第!玻璃基板2與第2玻璃基 板3之間予以氣密密封的密封層4。 第1玻璃基板2係如第7圖所示,具有在設有密封區域沘 的表面上所形成之薄膜7。在第丨玻璃基板2的表面上所形成 之薄膜7,例如係作為將在元件形成區域“上所形成之電子 元件的電極拉出至玻璃面板外側的佈線而發揮功能者。作 為佈線而發揮功能的薄膜7之代表例係可列舉如:錫摻雜氧 化銦(ITO)膜、氟摻雜氧化錫(FT〇)膜等透明導電膜。 諸如ITO膜、FTO膜等透明導電魅不僅触於其等單 獨的膜,亦可與其他導電膜或絕緣膜進行積層。與ιτ〇膜或 201043586The sealing material is shaken, and the glass substrate has a sealing area; the sealing material layer is transferred to the surface of the sealing layer 5 201043586 of the glass substrate, and comprises a sealing surface, a low expansion filler and an electromagnetic wave absorbing material. The sealing material is composed of a fired layer of a glass material; wherein the front sealing material layer contains bubbles in a range of 10 to 30% by volume, and contains carbon in a range of 50 to 200 ppm by mass. A method for producing a glass member having a sealing material layer according to the present invention is characterized in that a sealing glass containing a sealing glass, a low expansion filler, and an electromagnetic wave absorbing material is formed on the sealing region of a glass substrate having a sealing region. After the glass material layer is fired, the sealing glass material layer is fired to form a sealing material containing bubbles in a range of 1 〇 to 3 〇% by volume, and containing carbon in a range of 50 to 200 ppm by mass. Floor. An electronic device according to an aspect of the present invention includes: a first glass substrate, a second glass substrate, and a sealing layer, wherein the first glass substrate includes: an element forming region having an electronic component; and the component Forming a first sealing region on the outer peripheral side of the region; the second glass substrate has a second sealing region corresponding to the first sealing region of the first glass substrate, and the surface having the second sealing region is configured to be a surface of the second glass substrate having the first sealing region facing the first sealing layer; the sealing layer is formed in the first sealing region and sealing the first glass substrate and the second glass substrate The second sealing region is composed of a molten fixing layer of a sealing glass material containing a sealing glass, a low-expansion filler, and an electromagnetic wave absorbing material, wherein the sealing layer contains 10 to 35% by volume. The range of bubbles, and the size of the aforementioned bubbles is 〇. 1~丨00 μηι range. In the method of manufacturing an electronic device according to the aspect of the invention, the first glass substrate is provided in the first glass substrate, wherein the first glass substrate includes an element formation region having an electronic component and an outer peripheral side of the component formation region. a first sealing region; wherein the second glass substrate has a second sealing region and a sealing material layer; the second sealing region corresponds to the first sealing region of the first glass substrate; The sealing material layer is formed on the second sealing region, and is composed of a fired layer of a sealing glass material containing a sealing glass, a low expansion filler, and an electromagnetic wave absorbing material, and contains 10 to 30°/by volume. a range of bubbles including carbon in a range of 50 to 200 ppm by mass; and a surface of the first glass substrate and the second glass substrate that has the first sealing region and a surface having the second sealing region In the opposing manner, a layer is formed through the sealing material layer, and then the first glass substrate or the second glass substrate is irradiated with electromagnetic waves on the sealing material layer to locally heat the sealing material layer. The sealing layer is formed by sealing between the first glass substrate and the second glass substrate. According to the aspect of the invention, the glass member having the sealing material layer and the method for producing the same have excellent reproducibility, and it is possible to suppress the occurrence of cracks and breakage of the glass-filled substrate when the sealing is performed by local heating. Therefore, according to the electronic device of the aspect of the invention and the method of manufacturing the same, the airtightness and reliability thereof can be improved. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the structure of an electronic device according to an embodiment of the present invention. 7 201043586 The second (a) to (d) drawings are cross-sectional views showing the steps of manufacturing the electronic device according to the embodiment of the present invention. Fig. 3 is a plan view showing the first glass substrate used in the manufacturing process of the electronic device shown in Fig. 2. Fig. 4 is a cross-sectional view taken along line a-A of Fig. 3. Fig. 5 is a plan view showing a second glass substrate used in the manufacturing process of the electronic device shown in Fig. 2. Fig. 6 is a cross-sectional view taken along line a-A of Fig. 5. Fig. 7 is an enlarged plan view showing the first and second glass substrates shown in Fig. 2 in an enlarged manner. Fig. 8 is a cross-sectional view showing an enlarged view of the electronic device shown in Fig. 1. I: EMBODIMENT OF THE INVENTION MODE FOR CARRYING OUT THE INVENTION Hereinafter, the mode for carrying out the invention will be described with reference to the drawings. Fig. 1 is a structural view of an electronic device according to an embodiment of the present invention, and Fig. 2 is a manufacturing step diagram of an electronic device, and Figs. 3 to 6 show first and second glasses used. Fig. 7 is a cross-sectional view showing a part of the first and second glass substrates in an enlarged manner, and Fig. 8 is a cross-sectional view showing a part of the electronic device in an enlarged manner. The electronic device 1 shown in Fig. 1 constitutes an illumination device using a light-emitting element such as an FPLD or an OEL element such as an OELD, a PDP, or an LCD, or a solar cell such as a dye-sensitized solar cell. The electronic device 1 includes a first glass substrate (glass substrate for a component) 2 and a second glass substrate (glass substrate for sealing) 3 . The first glass substrate (element 201043586 glass substrate) 2 is provided with an element formation region 2 & The first and second glass substrates 2 and 3 are made of, for example, alkali-free glass or soda lime glass. The alkali-free glass system has a thermal expansion coefficient of about 35 to 40 (x 10_VC ). The soda lime glass has a coefficient of thermal expansion of about 85 to 9 Torr (x1 〇 -7 / ° C). In the element forming region 2 & of the first glass substrate 2, an electronic component corresponding to the electronic device 1 is formed, for example, an OLED or 〇EL illumination is used to form an OEL element, and in the case of a PDP, a plasma light-emitting element is formed. In the case of an LCD, a liquid crystal display element is formed. If it is a solar cell, a dye-sensitized photoelectric conversion unit or the like is formed. Electronic components such as a light-emitting element such as an OEL element or a solar cell element such as a dye-sensitized photoelectric conversion unit are provided with various known structures, and are not limited to those of the element structure. As shown in FIG. 3 and FIG. 4, the first glass substrate 2 has the i-th sealing region 21 and the i-th sealing region 2b provided on the outer peripheral side of the element forming region 2a, and is set to surround the element forming region 2a. . The second glass substrate 3 has a second sealing region 3a as shown in Figs. 5 and 6. The second sealing region 3a corresponds to the first sealing region 2b. In other words, when the first glass substrate 2 and the second glass substrate 3 are disposed to face each other, the first sealing region 2b and the second sealing region 3a are set to face each other, and will be the sealing layer 4 as will be described later. The formation region (the formation region of the sealing material layer 5 in the case of the second glass substrate 3). The first glass substrate 2 and the second glass substrate 3 are disposed such that the surfaces having the sealing regions 2b and 3a face each other and are formed, for example, in the element forming region 2a. In the solar cell element or the like, there is also a case where no gap is formed in the element forming region 2a. The space between the first glass substrate 2 and the second glass 9 201043586 substrate 3 is sealed by the sealing layer 4 . In other words, the sealing layer 4 is formed so as to be sealed between the sealing region 2b of the first glass substrate 2 and the sealing region 3a of the second glass substrate 3 in the case where a gap is formed between the glass substrates 2 and 3. The electronic component formed in the element formation region 23 is hermetically sealed by a glass panel composed of the first glass substrate 2, the second glass substrate 3, and the sealing layer 4. The sealing layer 4 is composed of a fusion-fixing layer that melts and seals the sealing material layer 5 formed on the sealing region 3a of the second glass substrate 3 to the first glass substrate 2. The area 2b is formed. The sealing material layer 5 is melted by local heating using electromagnetic waves 6 such as laser light or infrared rays. That is, in the sealing region 3a of the second glass substrate 3 for producing the electronic device, as shown in Figs. 5 and 6, the frame-shaped sealing material layer 5 is formed. The sealing material layer 5 formed in the sealing region 3a of the second glass substrate 3 is melted and fixed to the sealing region 2b of the second glass substrate 2 by heat of electromagnetic waves 6 such as laser light or infrared rays. Will be the first! The sealing layer 4 hermetically sealed between the glass substrate 2 and the second glass substrate 3. As shown in Fig. 7, the first glass substrate 2 has a film 7 formed on a surface on which a sealing region 设有 is provided. The film 7 formed on the surface of the second glass substrate 2 functions as a wiring for pulling out the electrode of the electronic component formed on the element formation region to the outside of the glass panel, for example, and functions as a wiring. Representative examples of the thin film 7 include, for example, a tin-doped indium oxide (ITO) film, a fluorine-doped tin oxide (FT〇) film, or the like, and a transparent conductive film such as an ITO film or an FTO film. A separate film can also be laminated with other conductive films or insulating films. With ιτ〇膜 or 201043586

膜7亦可純丨導f性金屬膜 其等之積層膜所構成者。薄賴 ^屬膜或絕緣性無機化合物膜,亦或 。薄膜7係由導電膜及絕緣膜中選出The film 7 may be formed of a laminated film of a pure bismuth metal film or the like. Thin film or insulating inorganic compound film, or. The film 7 is selected from a conductive film and an insulating film.

〇 ㉟况、’在第2玻璃基板3設有密封區域3a的表面亦形成有薄 7 ’惟薄膜7的形態並非僅限於此者而 基板2 3中至少一者之設有密封區域2b 膜。視兀件構造等而定,亦會有僅在第2玻璃基板3設有密 封區域蝴表面上形成有薄_情況。依此,第7圖中雖表 不有在第1朗基板2設有㈣區域2b的表面卿成的薄膜 7,椎Μ暄7沾jii站2 而為在第1與第2玻璃 2b、3a的表面上所形 «作為將電子7C件的電極拉出至玻璃面板外側的佈線 Ο 之薄膜7形成於第1玻璃基板2的表面時,薄膜7係依橫穿過 :封區域2b的方絲成。因此,如第8圖所示,便形成密封 曰4之至J其中—部分與薄膜7相接觸的情況。將薄膜形成 層第2破璃基板3的表面時亦然,形成密封材料層$甚至密封 4之至4其#—部分會與薄膜相接觸的情況。依此,當密 ^材料層5之至少其中一部分與薄膜7相接觸時,在密封層4 形成時抑制薄膜7發生剝離就變得重要。 在封材料層5係含有:密封玻璃(玻璃介質)、電磁波吸 收材(吸收f射光、紅外線等電磁波而發熱的材料)、及低膨 201043586 脹填充材的检封用玻璃材料之燒成層。密封用玻璃材料係 在使其熱膨脹率與玻璃基板2、3的熱膨脹率整合之前提 下,以含有低膨脹填充材為佳。密封用玻璃材料係在作為 主成分的密封玻璃中配合有電磁波吸收材與低膨脹填充材 者。密封用玻璃材料係可視需要含有除該等以外的添加材 料。 密封玻璃(玻璃介質)係使用例如錫-磷酸系玻璃、鉍系 玻璃、飢系玻璃、錯系玻璃等低炼點玻璃。該等之中,若 考慮對玻璃基板2、3的密封性(接著性)、與其可靠度(接著 可靠度、密閉性)、以及對環境與人體的影響性等因素,宜 使用由錫-磷酸系玻璃或鉍系玻璃所構成的密封玻璃。密封 玻璃的玻璃轉移點較佳係250〜30(TC,就此點而言,最好使 用錫-磷酸系玻璃。 錫-磷酸系玻璃(玻璃介質)宜具有2〇〜68莫耳%之Sn〇、 0.5〜5莫耳%2Sn〇2、及20〜40莫耳。/。之ho〆基本上,將合 計量設為100莫耳。/。)的組成。Sn0係用於使玻璃低熔點化的 成分。若SnO的含有量未滿20莫耳%則玻璃的黏性會提高, 導致密封溫度過度提高,若超過68莫耳%則將不發生玻璃 化。In the case of the second glass substrate 3, the surface of the second glass substrate 3 is also provided with a thin portion 7a. However, the form of the film 7 is not limited thereto, and at least one of the substrates 2 3 is provided with a film of the sealing region 2b. Depending on the structure of the element or the like, there may be a case where a thin surface is formed only on the surface of the second glass substrate 3 where the sealing portion is provided. Accordingly, in the seventh drawing, the film 7 having the surface of the (4) region 2b is provided on the first slab 2, and the vertebral ridge 7 is in the first and second glass 2b, 3a. The film 7 formed on the surface of the first glass substrate 2 is formed as a film 7 that pulls the electrode of the electron 7C member to the outside of the glass panel. The film 7 is traversed through the square of the sealing region 2b. to make. Therefore, as shown in Fig. 8, the sealing 曰4 is formed to the case where the portion is in contact with the film 7. When the film is formed into the surface of the second glass substrate 3, the sealing material layer $ is formed even if the sealing portions 4 to 4 are in contact with the film. Accordingly, when at least a part of the dense material layer 5 is in contact with the film 7, it becomes important to suppress peeling of the film 7 when the sealing layer 4 is formed. The sealing material layer 5 contains a sealing glass (glass medium), an electromagnetic wave absorbing material (a material that absorbs electromagnetic waves such as f-light or infrared rays to generate heat), and a fired layer of a glass material for inspection of a low-expansion 201043586 expanded filler. The sealing glass material is preferably formed to contain a low expansion filler before the thermal expansion coefficient thereof is integrated with the thermal expansion rates of the glass substrates 2 and 3. The sealing glass material is a combination of an electromagnetic wave absorbing material and a low expansion filler in a sealing glass as a main component. The glass material for sealing may contain an additive material other than these as needed. As the sealing glass (glass medium), for example, a low-melting point glass such as tin-phosphate glass, bismuth-based glass, hunth-glass or mis-glass is used. Among these, it is preferable to use tin-phosphoric acid in consideration of factors such as sealing property (adhesiveness) to the glass substrates 2 and 3, reliability (continuity reliability, airtightness), and influence on the environment and the human body. It is a sealing glass made of glass or bismuth glass. The glass transition point of the sealing glass is preferably 250 to 30 (TC, in this case, it is preferable to use tin-phosphate glass. The tin-phosphate glass (glass medium) preferably has 2 〇 to 68 mol% of Sn 〇 , 0.5 to 5 moles %2Sn 〇 2, and 20 to 40 moles. / ho 〆 basically, the total amount is set to 100 moles / /). Sn0 is a component for lowering the melting point of glass. If the content of SnO is less than 20 mol%, the viscosity of the glass will increase, and the sealing temperature will be excessively increased. If it exceeds 68 mol%, vitrification will not occur.

SnCb係用於使玻璃呈安定化的成分。若Sn〇2的含有量 未滿0.5莫耳%,則在密封作業時,於已軟化㈣的破璃中 Sn〇2會出現分離、析出,而損及流動性’導致密封作業性 降低。若Sn〇2的含有量超過5莫耳%,則Sn〇2將容易從低熔 點玻璃的熔融中析出。ί>2〇5係用於形成玻璃骨架的成分。 12 201043586 若卩2〇5的含有量未滿20莫耳。/。,便不會玻璃化,而若其含有 量超過40莫耳%,便會有引發屬於磷酸鹽玻璃特有缺點的 而才候性惡化之疑慮。 在此’玻璃介質中的SnO及Sn〇2比例(莫耳%)係可依如 下進行求取。首先,將玻璃介質(低熔點玻璃粉末)施行酸分 解後,利用ICP發光分光分析測定在玻璃介質中所含有Sn 原子的總量。接著,由於Sn2+(SnO)係可將經酸分解的物質 錯由峨滴定法求得’因此將此處所求得的Sn2+量從Sn原子 總量中扣減掉,便可求取Sn4+(Sn02)。 以上述之3成分所形成的玻璃係玻璃轉移點較低,適用 於低溫用密封材料者,但亦可含有下列成分作為任意成 分:Si02等形成玻璃骨架的成分、或ZnO、B203、Al2〇3、 W03、Mo〇3、Nb205、Ti〇2、Zr〇2、Li20 ' Na20、κ20、SnCb is a component used to stabilize glass. When the content of Sn 〇 2 is less than 0.5 mol%, Sn 〇 2 is separated and precipitated in the softened (four) glaze during the sealing operation, and the fluidity is impaired, resulting in a decrease in sealing workability. When the content of Sn 〇 2 exceeds 5 mol%, Sn 〇 2 is likely to be precipitated from the melting of the low melting point glass. ί>2〇5 is a component used to form a glass skeleton. 12 201043586 If the content of 卩2〇5 is less than 20 m. /. It will not be vitrified, and if it contains more than 40% by mole, there will be doubts that the specific defects of phosphate glass are deteriorating. The ratio of SnO and Sn〇2 (% by mole) in this 'glass medium' can be determined as follows. First, the glass medium (low-melting glass powder) was subjected to acid decomposition, and the total amount of Sn atoms contained in the glass medium was measured by ICP emission spectrometry. Then, since the Sn2+(SnO) system can determine the acid-decomposed substance by the enthalpy titration method, the Sn2+(Sn02) can be obtained by subtracting the amount of Sn2+ obtained here from the total amount of Sn atoms. . The glass-based glass formed of the above three components has a low transfer point and is suitable for a low-temperature sealing material, but may contain the following components as an optional component: a component forming a glass skeleton such as SiO 2 or ZnO, B203, or Al 2 〇 3 , W03, Mo〇3, Nb205, Ti〇2, Zr〇2, Li20 'Na20, κ20,

Cs20、MgO、CaO、SrO、BaO等使玻璃安定化的成分等。 但,若任意成分的含有量過多’則會有玻璃變得不安定而 發生失透,或玻璃轉移點與軟化點上升的疑慮,因此任意 成分的合計含有量最好設定在莫耳%以下。此情況的玻 璃組成係依照基本成分與任意成分的合計量基本上成為 100質量%的方式進行調整。 密封用玻璃材料係含有能發揮雷射吸收材與紅外線吸 收材之功能的電磁波吸收材°電磁波吸收材係使用從Fe、 Cr、Μη、Co、Ni及Cu中選出之至少1種金屬、或含有前述 金屬的氧化物等之化合物。電磁波吸收材的含有量相對於 密封用玻璃材料,宜設為〇.1〜體積%範圍。若電磁波吸收 13 201043586 材的含有量未滿01體積Q/。,則無法在照射雷射光或紅外線 %使密封材料層5充分熔融。若電磁波吸收材的含有量超過 10M% ’ Μ在雷射光或紅外線照射時,會有在與第2玻璃 基板3間的界面附近處局部性發熱,導致於第2玻璃基板3發 生破碎等’又密封用玻璃材料之熔融時的流動性劣化,導 致與第1玻璃基板2之接著性降低之疑慮。 法、封用玻璃材料係更進一步含有低膨脹填充材。低膨 服填充材係可使用從二氧化矽、氧化鋁、二氧化锆Λ矽酸 錯、蓳青石、磷酸锆系化合物、鈉鈣玻璃及硼矽酸玻璃中 選出之至少1種。碟酸錯系化合物係可舉例如. (ZrO)2P2〇7、NaZr2(P〇4)3、KZr2(P04)3、Ca〇 .5Zr2(P〇4)3、 Na〇.5Nb〇.5Zr1.5(P〇4)3 、K〇. 5Nb〇. 5Zri. 5 (P〇4)3 、A component such as Cs20, MgO, CaO, SrO, or BaO that stabilizes the glass. However, if the content of the optional component is too large, there is a concern that the glass becomes unstable and devitrification occurs, or the glass transition point and the softening point rise. Therefore, the total content of the optional components is preferably set to be equal to or less than mol%. The glass composition in this case is adjusted so that the total amount of the basic component and the arbitrary component is substantially 100% by mass. The sealing glass material contains an electromagnetic wave absorbing material that functions as a laser absorbing material and an infrared absorbing material. The electromagnetic wave absorbing material uses at least one metal selected from Fe, Cr, Μ, Co, Ni, and Cu, or contains A compound such as an oxide of the foregoing metal. The content of the electromagnetic wave absorbing material is preferably in the range of 0.1 to 5% by volume based on the glass material for sealing. If the electromagnetic wave absorption 13 201043586 material content is less than 01 volume Q /. However, the sealing material layer 5 cannot be sufficiently melted by irradiating laser light or infrared rays. When the content of the electromagnetic wave absorbing material exceeds 10 M%, 局部 when irradiated with laser light or infrared rays, local heat is generated in the vicinity of the interface with the second glass substrate 3, and the second glass substrate 3 is broken. The fluidity at the time of melting of the glass material for sealing is deteriorated, and the adhesion to the first glass substrate 2 is lowered. The method and the sealing glass material further contain a low expansion filler. As the low-expansion filler, at least one selected from the group consisting of cerium oxide, aluminum oxide, zirconium dioxide cerium oxalate, cordierite, zirconium phosphate-based compound, soda lime glass, and borosilicate glass can be used. The disc acid-missing compound may, for example, be (ZrO)2P2〇7, NaZr2(P〇4)3, KZr2(P04)3, Ca〇.5Zr2(P〇4)3, Na〇.5Nb〇.5Zr1. 5(P〇4)3, K〇. 5Nb〇. 5Zri. 5 (P〇4)3,

Ca0 2 5 Nb〇.5Zr15(P〇4)3、NbZr(P04)3、Zr2(W〇3)(P〇4)2、 以及該等的複合化合物。所謂「低膨脹填充材」係指具有 較屬於密封用玻璃材料主成分的密封玻璃更低之熱膨脹係 數者。 低膨脹填充材的含有量係依密封用玻璃材料的熱膨脹 係數接近玻璃基板2、3的熱膨脹係數之方式適當設定。低 膨脹填充材雖亦因密封玻璃或玻璃基板2、3的熱膨脹係數 而異’但相對於密封用玻璃材料,較佳係含有丨~50體積% 範圍。若低膨脹填充材的含有量未滿1體積%,便無法充分 獲得調整密封用玻璃材料之熱膨脹率的效果。另一方面’ 若低膨脹填充材的含有量超過50體積%,便會有密封用玻 璃材料的流動性降低’導致接著強度降低的疑慮。 14 201043586 低膨脹填充材的含有量更佳係設為25〜50體積%範 圍。藉由將低膨脹填充材的含有量設為25體積%以上,可 適度地控制密封用玻璃材料的流動性。即,當將密封材料 層5利用雷射光或紅外線進行加熱而熔融時,密封用破璃材 料朝線寬方向(玻璃基板2、3的面方向)之流動將受抑制。藉 此,可抑制密封材料層5的膜厚減少。但,若低膨脹填充材 的含有量過多,則由於密封用玻璃材料的流動性會過度降 低’因此低膨脹填充材的含有量宜設在50體積%以下。 含有密封玻璃、低膨脹填充材及電磁波吸收材的密封 用玻璃材料之熱膨脹係數,較佳係40〜85(χ 10_7/°C )、更佳係 45〜75(xl〇_7/。。)。 但疋,當密封材料層5的局部加熱係使用例如雷射光的 情況,密封材料層5係從被沿其進行掃描的雷射光所照射到 部分開始依序㈣,在雷射光的照射結束時便被急冷固化 而固接於第1玻璃基板2。依此,密封材料層5的炼融•固化 便局部性連續地發生d此,絲融時密封材料層5之膜厚 減少情況較嚴重,便會對在玻璃基板2_表面上所形成之 薄膜7施加剝離方向的力ι —步而言,會根據密封材料層 5之減少膜厚部分對玻璃基板2、3施加應力。由於該應力係 對局部呈急劇施加,因此會導致玻璃基板2、3發生龜裂^ 破碎等情況。 針對此情況’實施形態的密封材料層5係含有依體積比 例計10〜30%的氣[在密封材料層5_存在的微小氣泡 -般認為在利用雷射照射或紅外線照射等進行加熱時,會 15 201043586 發生膨脹、咬相土 為碳會成為碳酸泡彼此會合體而成長。且,亦認 氣泡等。藉由該 a化’導致氣體量增加或產生新的 少情形。因此_便可抑制㈣材料層5溶融時的膜厚減 於薄膜7的_^密封材料層5的局部性炼融·固化而施加 受到緩和。即、及進—步對玻璃基板2、3所施加的應力 的薄膜7剝離情、Γ現性佳地防止隨密封層4的形成而造成 若密封材制U及玻魏板2'3之4料破碎等情況。 分獲得基於當_5中的氣減例她G體積%,便無法充 的膜m $ ‘’、、、#射光或紅外料的氣泡體積膨脹所達 獲得二2抑制效果。未滿1〇體積%的氣泡,無法充分 :、六乱,料層5的體積膨服(即彌補因密封材料層5的熔 ^所造成之膜厚減少),意即無法充分獲得使膜厚增加 、。 另—方面,若密封材料層5中的氣泡比例超過3〇體 積% ’則將因炼融•固化後的氣泡體積過度增加導致密 封層4的接著強度降低。 密封材料層5中的氣泡大小較佳係設為〇卜5〇哗範 =氣'包的大小係表示長軸者。若氣泡的較Ο.ίμιη小,則在 氣泡量夕時,會有因氣泡分散狀態變得過密,導致氣泡與 氣泡間的玻璃層厚度變薄的情紐生。此種狀態下,密封 層4的接著強度容易降低。另一方面,若氣泡的大小超過 50μΓη’則經雷射光或紅外線照射後容易形成連續氣泡,而 會有導致密封層4的氣密性降低之疑慮。 密封材料層5中的氣泡之至少一部分,係在雷射加熱時 或紅外線加熱時,會因體積膨脹或合體等而成長。為能促 16 201043586 進此種氣泡的成長’密封材料層5含有適量的碳。礙在加执 時會與玻璃成分中的氧反應而成為三氧化㈣氣體。依 此’藉由在加熱時使密封材料層5内產生氣體,便可使氣泡 更有效果地成長。以能獲得此種效果為前提,將密封材料 層5中的碳量設為依質量比例計5〇〜2〇〇卯m範圍。 ΟCa0 2 5 Nb〇.5Zr15(P〇4)3, NbZr(P04)3, Zr2(W〇3)(P〇4)2, and these composite compounds. The "low-expansion filler" means a lower thermal expansion coefficient of a sealing glass which is a main component of the glass material for sealing. The content of the low-expansion filler is appropriately set in such a manner that the thermal expansion coefficient of the glass material for sealing is close to the thermal expansion coefficients of the glass substrates 2 and 3. The low-expansion filler is also different depending on the thermal expansion coefficient of the sealing glass or the glass substrates 2 and 3, but it is preferably in the range of 丨 to 50% by volume with respect to the glass material for sealing. If the content of the low-expansion filler is less than 1% by volume, the effect of adjusting the thermal expansion coefficient of the glass material for sealing cannot be sufficiently obtained. On the other hand, if the content of the low-expansion filler exceeds 50% by volume, the fluidity of the glass material for sealing may be lowered, which may cause a decrease in the strength of the adhesive. 14 201043586 The content of the low-expansion filler is preferably in the range of 25 to 50% by volume. By setting the content of the low-expansion filler to 25% by volume or more, the fluidity of the sealing glass material can be appropriately controlled. In other words, when the sealing material layer 5 is heated and melted by laser light or infrared rays, the flow of the glass material for sealing in the line width direction (the surface direction of the glass substrates 2 and 3) is suppressed. Thereby, the film thickness reduction of the sealing material layer 5 can be suppressed. However, if the content of the low-expansion filler is too large, the fluidity of the glass material for sealing is excessively lowered. Therefore, the content of the low-expansion filler is preferably 50% by volume or less. The thermal expansion coefficient of the sealing glass material containing the sealing glass, the low-expansion filler, and the electromagnetic wave absorbing material is preferably 40 to 85 (χ 10_7/° C.), more preferably 45 to 75 (xl 〇 _7/.). . However, when the local heating of the sealing material layer 5 uses, for example, laser light, the sealing material layer 5 is sequentially irradiated from the portion of the laser light scanned along it (4), at the end of the irradiation of the laser light. The film is fixed to the first glass substrate 2 by rapid cooling. Accordingly, the refining and solidification of the sealing material layer 5 occurs locally continuously, and the film thickness of the sealing material layer 5 is reduced when the wire is melted, and the film formed on the surface of the glass substrate 2_ is formed. 7 The force applied in the peeling direction is applied to the glass substrates 2, 3 in accordance with the reduced film thickness portion of the sealing material layer 5. Since the stress is applied to the portion sharply, the glass substrates 2 and 3 may be cracked or broken. In this case, the sealing material layer 5 of the embodiment includes 10 to 30% by volume of the gas (the microbubbles which are present in the sealing material layer 5_ are generally considered to be heated by laser irradiation or infrared irradiation or the like). Meeting 15 201043586 Inflated, biting the soil as carbon will become carbonated bubbles and will grow together. Also, recognize bubbles and so on. By this, the amount of gas is increased or a new less is generated. Therefore, it is possible to suppress (4) the film thickness at the time of melting of the material layer 5 is reduced by the local smelting and solidification of the sealing material layer 5 of the film 7, and the application is alleviated. That is, the film 7 which is subjected to the stress applied to the glass substrates 2 and 3 is peeled off, and the release property is preferably prevented from being formed with the sealing layer 4, and if the sealing material is made of U and the glass plate 2'3 Broken material, etc. The sub-suppression effect is obtained by expanding the bubble volume expansion of the film m $ ‘’, , ##, or the infrared material, which is based on the gas reduction in _5. If the bubble is less than 1% by volume, it is not sufficient: and the volume of the layer 5 is expanded (that is, the film thickness is reduced by the melting of the sealing material layer 5), that is, the film thickness cannot be sufficiently obtained. increase,. On the other hand, if the proportion of the bubbles in the sealing material layer 5 exceeds 3 〇% by volume, the adhesion strength of the sealing layer 4 is lowered due to an excessive increase in the volume of the bubbles after the smelting and solidification. The size of the bubble in the sealing material layer 5 is preferably set to be the same as the size of the gas package. If the bubble is smaller than Ο. ίμιη, there will be a situation in which the bubble dispersion state becomes too dense, resulting in a thinning of the thickness of the glass layer between the bubble and the bubble. In this state, the adhesion strength of the sealing layer 4 is liable to lower. On the other hand, when the size of the bubble exceeds 50 μΓη', continuous bubbles are easily formed by irradiation with laser light or infrared rays, and there is a fear that the airtightness of the sealing layer 4 is lowered. At least a part of the air bubbles in the sealing material layer 5 grows due to volume expansion or conformation when heated by laser or heated by infrared rays. In order to promote the growth of such bubbles, the sealing material layer 5 contains an appropriate amount of carbon. It will react with oxygen in the glass component to become a trioxide gas during the addition. Accordingly, by generating a gas in the sealing material layer 5 during heating, the bubbles can be more effectively grown. On the premise that such an effect can be obtained, the amount of carbon in the sealing material layer 5 is in the range of 5 Å to 2 〇〇卯 m in terms of mass ratio. Ο

若在封材料層5中的碟量超過2〇〇ppm,則會有在雷射加 熱時或紅外線加熱時所產生的氣體量變為過多,導致連續 氣泡增加而造成密封層4的氣密性降低之疑慮。若密封材料 層5中的碳量未滿5〇ppm,則產生氣體量*足而無法使密 封材料層5中的氣泡體積充分增加。此情況加熱結束而已 口化的4 /7與被加熱而為溶融的部分之膜厚差會變大,由 於此種膜厚麵造狀應變的驗,導致容肖產生玻璃基 板2、3的破碎、密封層4的破碎與剝落、及薄膜7的剝落等 情況。 關^作為密封材料層5之炼融•固化體的密封層4,較 佳:將泡的體積比例設為5〜35%範圍。特別係以大於密 封前的密封材料層5之氣泡體積比例為佳。密封層4的氣泡 大】(長軸)k佳係設為G丨〜刚吨範^特佳 封材抑5^ 小,係意味著料充分抑制來自密 Γ 膜厚減少。因此,容易產生麵基板2、3的破 =層4的破碎或㈣、薄膜7的剝落 層4中的氣泡比例多、又氣泡的尺寸大時,密封層4 = 強度與氣密性等變得容易降低。 域4的接者 17 201043586 密封層4的厚度丁2相對於密封材料層5的厚度乃,較佳 係設為0.9Τι以上且Ι.ΙΤρχ下範圍。且,密封層4的體積V2 相對於密封材料層5的體積,較佳係設為超過以1且在 1.15V,以下的範圍。藉由滿足此種條件,便可重現性佳地 抑制因密封材料層5進行炫融時的膜厚減少所造成之玻璃 基板2、3的破碎、密封層4的破碎與剝落、薄膜7的剝落等 情形。密封層4的厚度丁2更佳係達以上。密封層4的體積 V2更佳係達1.02V】以上。 密封材料層5係依如下述,形成於第2玻璃基板3的密封 區域3a上。 首先’將密封用玻璃材料與載體(vehicle)相混合而調製 密封材料膏。載體係將屬於黏結成分的樹脂於溶劑中溶解 而成者。載體用樹脂係可使用例如:曱基纖維素、乙基纖 維素、羧曱基纖維素、氧乙基纖維素、苄基纖維素、丙基 纖維素、硝化纖維素等纖維素系樹脂;甲基丙烯酸曱酯、 甲基丙烯酸乙酯、曱基丙烯酸丁酯、曱基丙烯酸_2_羥乙酯、 丙埽酸丁酯、丙烯酸_2_羥乙酯等將丨種以上的丙烯酸系單體 進行聚合而獲得的丙烯酸系樹脂等有機樹脂。作為溶劑, 在纖維素系樹脂的情況可使用松油醇、丁基卡必醇醋酸 -曰、乙基卡必醇醋酸酯等溶劑’在丙烯酸系樹脂的情況則 使用甲乙酿| '松油醇、丁基卡必醇醋酸酯、乙基卡必醇醋 駿酯等溶劑。 密封材料膏的黏度只要可配合在玻璃基板3上施行塗 佈之裝置的對應黏度即可,可藉由载體中的樹脂(黏結成分) 18 201043586 與溶劑之比例、或密封用玻璃材料與載體的比例進行碉 整。在密封材料膏中尚可添加諸如消泡劑、分散劑之=的 玻璃糊膏公知添加物。密封材料膏的調製可應用使用了諸 如具備授拌翼的旋轉式混合機或輥碎機、球磨機等的公知 方法。 Α α 在第2破璃基板3的密封區域%上塗佈密封材料膏,使 其乾燥而形成密封材料膏的塗佈層。密封材料膏係使用例 ㈣版印刷或凹版印刷等印刷法,塗佈於第2密封區域知 J^或者使用點膠機等沿第2密封區域3视行塗佈。密封材 料貧的塗佈層係以例如12Gt以上的溫度使其乾㈣分鐘 以上乾燥步驟係為了將塗佈層内的溶劑除去而實施者。 佈層内殘留有溶劑,在後續的燒成步驟中便會有無法 將黏結成分充分地分解、燃燒之疑慮。 ^ 將上述密封材料膏的塗佈層施行燒成而形成密封材料 層5。燒成步驟係首先將塗佈層加熱至作為密封用玻璃材料 主成分的密封玻璃(玻璃介質)之玻璃轉移點以下的溫度,經 將塗佈層内的黏結成分分解、燃燒後,便加熱至密封玻璃 (賴介請軟化點以上之溫度,而將密封驗璃材料予以 炼融’利用由黏結成分的分解、燃燒所產生氣體(以下稱「分 解」)使炫融物進行發泡,且將經發泡的熔融物燒附於 璃土板上依此進行而形成由密封用破璃材料的燒成層 所構成之密封材料層5。 在此種密封材料層5的形成步财,在經加熱至密封玻 璃的玻璃轉移』以下之溫度而將黏結成分分解、燃燒後, 19 201043586 藉由調節加熱至密封玻璃的軟化點以上之溫度時的升溫速 度等’便可控制密封材料層5中的氣泡量與氣泡大小。通常 為能獲得緻密的密封材料層5,將從密封玻璃的軟化點起至 燒成溫度間的升溫速度設為丨〜⑺七如岀將除去分解氣體, 而藉由將此種溫度範圍的升溫速度設為20〜70。〇 /min範 圍’則會使分解氣體殘留,俾能獲得適度大小的氣泡以所 期望的範圍存在之密封材料層5。又,若在該範圍内加速升 溫速度,氣泡量便會增加並獲得較小的氣泡,若升溫速度 變慢’則氣泡量會減少並獲得較大的氣泡。 再者’密封材料層5的形成步驟中,可藉由使用(丨)、(2) 等方法來控制密封材料層5的碳量:(丨)將有機物或碳等當作 碳源而添加於密封玻璃(或密封用玻璃材料)中,便使源自碳 源的碳含於密封用玻璃材料中;(2)使源自密封材料膏中的 黏結成分(有機樹脂)或有機溶劑中的碳其中一部分殘留。(2) 的方法由於並不需要附加特別的步驟便可控制碳量,因此 屬較佳。另外,即便是該等以外的方法,只要能使密封材 料層5的碳量,以質量比例計成為5〇〜2〇〇ρρηι範圍的方法便 均可適用。 相關上述(1)的方法’例如在將玻璃粉碎時,添加醇等 有機物當作碳源。該方法因為醇等亦具有粉碎助劑的作 用,因此亦可提局玻璃的粉碎效率。在密封破璃中所添加 的碳源並不僅侷限於有機物,亦可為碳黑或石墨等碳。即 便將相對於密封玻璃的有機物或碳等碳源之添加量設為一 疋,由方;石厌里係依照燒成條件而變化,因此預先求取所添 20 201043586 加的碳源在燒成後會有何種程度之殘留的相關關係。再據 此控制密封材料層5之碳量。又,亦可將碳源的添加量設為 一定,而使燒成條件(溫度、時間)變化俾進行碳量控制。 (2)的方法係在密封玻璃中未添加碳源,而使源自糊膏 化時所使用之載體的黏結成分(有機樹脂)或有機溶劑的碳 其中一部分殘留的方法。此情況,栽體的組成、進行糊膏 化之際的密封用玻璃材料與載體之組成比、燒成條件、特 0 別係從樹脂燃燒、分解的溫度域起至密封玻璃進行軟化為 止的溫度範圍内之升溫速度與保持時間就變得重要。相關 密封材料膏製作時所使用的載體,適用⑴方法時並無特別 的限制,但適用(2)方法時,較佳係使用將纖維素系樹脂(特 別係硝化纖維素)於松油醇、丁基卡必醇醋酸酯、乙基卡必 醇醋酸酯等有機溶劑中溶解而得者。 (2)方法所使用的載體較佳係使15〜5質量%的硝化纖 維素於95〜".5質量%之選自松輯、了基卡必醇醋酸醋及 〇 乙基卡必醇醋酸®旨之任1種有機溶劑、或2種以上的混合溶 劑中溶解而成者。且,就密封用玻璃材料的糊膏化而言, 較佳係將7〇〜90質量%密封用玻璃材料與10〜30質量%載體 進仃犯合而6周製為密封材料膏。藉由使用此種載體及密封 柯料膏’可提高密封材料層5之殘留碳量的控制性。 關於密封材料膏塗佈層的燒成步驟,一般為了不使密 封用玻璃材料還原,便使用能使樹脂成分完全分解、燃燒 、條件纟體而δ ’藉由在樹脂進行分解、燃燒的溫度以 上、且未滿密封玻璃進行軟化流動的溫度之溫度域中減慢 21 201043586 升溫速度,且保持1〜15小時左右,將促進樹脂的分解、燃 燒。當適用(2)的方法時,藉由控制樹脂的分解、燃燒步驟, 便可使適量碳殘留於密封材料層5中。 依如上述,載體中的樹脂成分較佳係硝化纖維素。硝 化纖維素係以200〜250t範圍的溫度進行分解、燃燒。例如 錫-鱗酸系玻璃介質軟化流動的溫度為26〇〜4〇(rc範圍。因 此,200〜40(TC的溫度範圍便屬重要。如上述含有碳的密封 材料層5係可藉由控制2〇〇〜400°C的升溫速度而獲得。具體 而言,較佳係在200〜40(TC溫度範圍内以1〇〜25°C/min速度 進行升溫。當利用批次爐等進行燒成時,為使爐内溫度均 等而保持在200〜40(TC溫度範圍時,較佳係將保持時間設為 未滿50分鐘。 其次,如第2(a)圖所示,使用第2玻璃基板3(其係具有 松封材料層5)、及第1玻璃基板2(其係具有元件形成區域 2a ’而該元件形成區域2a係具備另外製作的電子元件),製 作諸如OELD、PDP、LCD等使用FPD、OEL元件的照明裝 置、或諸如色素增感型太陽電池之類的太陽電池等電子裝 置1。即’如第2(b)圖所示,將第1玻璃基板2與第2玻璃基板 ’依設有元件形成區域2a之面與設有密封材料層5之面呈 相對向之方式進行積層。在第1玻璃基板2的元件形成區域 2a上’因密封材料層5的厚度而形成有間隙。 接著’如第2(c)圖所示,透過第2玻璃基板3(或第1玻璃 基板2)對密封材料層5照射諸如雷射光或紅外線等電磁波 6 °使用雷射光作為電磁波6時,雷射光係沿框狀的密封材 22 201043586 料層5—邊進行掃描一邊照射。 雷射光並無特別的限定,可使用來自半導體雷射、唆 酸氣體雷射、準分子雷射、YAG雷射' HeNe雷射等的雷射 光。 雷射光的輸出係配合密封材料層5的厚度等而適當設 定者,宜應用使密封材料層5的加熱溫度(加工溫度)成為 500〜800°C範圍的輪出(例如25〜85W範圍的輸出)。若密封材 料層5的加熱溫度未滿500°c ,便會有在密封材料層5進行您 融時無法使氣泡充分成長的疑慮。又,若密封材料層5的加 熱溫度超過800°C,在加熱時便容易於玻璃基板2、3發生龜 裂、破碎等情況。 密封材料層5係從沿其進行掃描的雷射光所照射到的 部分開始依序溶融,在雷射光照射結束時便急冷固化而固 接於第1玻璃基板2。然後,遍及密封材料層5之全周施行雷 射光照射,藉以形成如第2(d)圖所示將第丨玻璃基板2與第2 玻璃基板3間予以密封的密封層4。由於密封材料層5在溶融 時發生氣泡成長而抑制膜厚減少情形,因此便可抑制玻璃 基板2、3的破碎、密封層4的破碎與剝落、薄膜7的剝落等 情形。 依此進打’利用由第1破璃基板2、第2玻璃基板3及密 封層4所構成的玻璃面板,製作將㈣於元件侃區域h中 '子7L件予以乳密密封的電子裳置^。電子裝置工的可靠 h =於由进封層4所造成的氣密密封性 、以及玻璃基板 '與密封層4間的接著強度等。根據本實施形態,由於可 23 201043586 提=氣密韻性與接著強度,因此可獲得可#度優異的電 子裝置1。另外,㈣部予以氣密密封的玻璃面板並不僅侷 限於電子裝置卜尚可應用於t子零件的韻體 '或諸如雙 層真空破璃之類的玻璃構件(建材等)。 實施例 其次,針對本發明具體實施例及其評估結果進行敘 述。另外,以下的說明並非用以限定本發明者,可沿本發 明主旨進行形式上的改變。 (實施例1) 準備依莫耳°/〇表示含有:SnO(;55.7%;)、SnOW.l%)、 P2〇5(32.5%)、ZnO(4.8〇/。)、Al2〇3(2.3%)、si〇2(1,6%)組成的 錫-磷酸系玻璃介質(玻璃轉移點=28〇t)、作為低膨脹填充 材的嶙酸鍅((Zr0)2P207)粉末、及Fe2〇3_Cr2〇3_c〇2〇3_Mn〇 系雷射吸收材(平均粒徑=2μηι)。又,將4質量%之作為黏結 成分的硝化纖維素,溶解於96質量。/。之由丁基卡必醇醋酸 酯所構成的溶劑中便製得載體。 其次’將上述錫-填酸系玻璃介質51體積%、碟酸錄粉 末45.2體積%、及雷射吸收材3 _8體積°/。進行混合而製得密封 用玻璃材料(熱膨脹係數:45xlO_7/°C)。將密封用玻璃材料 84質量%與載體16質量%相混合而調製得密封材料膏。接 著,在由無鹼玻璃(熱膨脹係數:38xl(T7/°C)所構成第2玻璃 基板(尺寸:9〇x9〇x〇.7mmt)的外周區域’將密封材料膏以 網版印刷法施行塗佈(線寬:500μιη)後’再依12(TCxlO分鐘 的條件施行乾燥。在第2玻璃基板的表面上形成!^〇膜。 24 201043586 將經乾燥後的密封材料膏之塗佈層依升溫速度i 5 /min升溫至250°C,並在該溫度保持5分鐘,而使黏結劑(硝 化纖維素)分解、燃燒(以下將此處理稱「脫黏結劑處理」) 後,再以升溫速度15°C/min升溫至350。(:,更從350°C(軟化 點)以升溫速度50°C/min升溫至43(rc,並在該溫度保持1〇 分鐘而完成燒成。依此進行便形成膜厚几為”卜爪的密封材 料層。If the amount of the disk in the sealing material layer 5 exceeds 2 〇〇 ppm, the amount of gas generated during laser heating or infrared heating becomes excessive, resulting in an increase in continuous bubbles and a decrease in airtightness of the sealing layer 4. Doubt. If the amount of carbon in the sealing material layer 5 is less than 5 〇 ppm, the amount of gas generated is sufficient to sufficiently increase the bubble volume in the sealing material layer 5. In this case, the difference in film thickness between the 4/7 which has been heated and the portion which is heated and melted becomes large, and the crack of the glass substrate 2, 3 is caused by the film thickness of the film. The crushing and peeling of the sealing layer 4, and the peeling of the film 7 and the like. As the sealing layer 4 of the refining and solidifying body of the sealing material layer 5, it is preferable that the volume ratio of the bubbles is set to be in the range of 5 to 35%. In particular, it is preferred that the proportion of the bubble volume is larger than that of the sealing material layer 5 before sealing. The bubble of the sealing layer 4 is large] (long axis) k is set to G 丨 刚 刚 ^ ^ ^ ^ ^ ^ 抑 抑 抑 抑 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封 封Therefore, it is easy to cause the breakage of the fracture layer 4 of the surface substrates 2, 3 or (4), the proportion of the bubbles in the peeling layer 4 of the film 7 is large, and when the size of the bubble is large, the sealing layer 4 = strength and airtightness become Easy to lower. The contact of the domain 4 17 201043586 The thickness of the sealing layer 4, 2, with respect to the thickness of the sealing material layer 5 is preferably 0.9 Τ or more and Ι.ΙΤρχ. Further, the volume V2 of the sealing layer 4 is preferably in a range of more than 1 and 1.15 V or less with respect to the volume of the sealing material layer 5. By satisfying such a condition, it is possible to suppress the breakage of the glass substrates 2, 3, the breakage and peeling of the sealing layer 4, and the peeling of the sealing layer 4 due to the reduction in film thickness when the sealing material layer 5 is condensed by resilience. Peeling and other situations. The thickness of the sealing layer 4 is preferably more than the above. The volume V2 of the sealing layer 4 is preferably 1.02 V or more. The sealing material layer 5 is formed on the sealing region 3a of the second glass substrate 3 as follows. First, the sealing material paste is prepared by mixing a sealing glass material with a vehicle. The carrier is obtained by dissolving a resin belonging to a binder component in a solvent. As the carrier resin, for example, cellulose-based resins such as mercapto cellulose, ethyl cellulose, carboxymethyl cellulose, oxyethyl cellulose, benzyl cellulose, propyl cellulose, and nitrocellulose can be used; Ethyl acrylate, ethyl methacrylate, butyl methacrylate, 2-hydroxyethyl methacrylate, butyl acrylate, 2-hydroxyethyl acrylate, etc. An organic resin such as an acrylic resin obtained by polymerization. As a solvent, in the case of a cellulose-based resin, a solvent such as terpineol, butyl carbitol acetate-hydrazine or ethyl carbitol acetate can be used. In the case of an acrylic resin, it is used as a solvent. , butyl carbitol acetate, ethyl carbitol alcohol ester and other solvents. The viscosity of the sealing material paste may be any combination of the resin (bonding component) 18 201043586 in the carrier and the solvent, or the sealing glass material and the carrier, as long as it can match the corresponding viscosity of the device applied to the glass substrate 3. The proportion is adjusted. A well-known additive of a glass paste such as an antifoaming agent or a dispersing agent can be added to the sealing material paste. The preparation of the sealing material paste can be applied by a known method such as a rotary mixer or a roller mill having a mixing wing, a ball mill or the like. Α α A sealing material paste is applied onto the sealing area % of the second glass substrate 3, and dried to form a coating layer of the sealing material paste. The sealing material paste is applied by a printing method such as plate printing or gravure printing, applied to the second sealing region, or coated in the second sealing region 3 by using a dispenser or the like. The coating layer which is lean in the sealing material is dried at a temperature of, for example, 12 Gt or more (four minutes) or more. The drying step is carried out in order to remove the solvent in the coating layer. A solvent remains in the cloth layer, and in the subsequent firing step, there is a fear that the binder component cannot be sufficiently decomposed and burned. The coating layer of the above-mentioned sealing material paste is fired to form a sealing material layer 5. In the baking step, the coating layer is first heated to a temperature lower than the glass transition point of the sealing glass (glass medium) which is a main component of the sealing glass material, and after the binder component in the coating layer is decomposed and burned, it is heated to Sealing glass (recommended by softening the temperature above the softening point, and smelting the sealing glass material), the gas generated by the decomposition and combustion of the bonding component (hereinafter referred to as "decomposition") is used to foam the glaze, and The foamed melt is burned on the glass plate to form a sealing material layer 5 composed of a fired layer of the glass frit material for sealing. The formation of the sealing material layer 5 is in the future. After the heat transfer to the glass transition of the sealing glass, the binder component is decomposed and burned, 19 201043586 can be controlled in the sealing material layer 5 by adjusting the temperature rise rate when heating to a temperature higher than the softening point of the sealing glass. The amount of bubbles and the size of the bubbles. Usually, a dense sealing material layer 5 can be obtained, and the temperature increase rate from the softening point of the sealing glass to the firing temperature is set to 丨~(7) The gas is decomposed, and the temperature increase rate in such a temperature range is set to 20 to 70. The 〇/min range 'will cause the decomposition gas to remain, and the sealing material layer 5 in which a moderately sized bubble exists in a desired range can be obtained. Moreover, if the temperature increase rate is accelerated within the range, the bubble amount will increase and a smaller bubble will be obtained, and if the temperature increase rate becomes slower, the bubble amount will decrease and a larger bubble will be obtained. Further, the 'sealing material layer 5' In the forming step, the amount of carbon of the sealing material layer 5 can be controlled by using a method such as (丨), (2), etc.: (丨) adding an organic substance or carbon or the like as a carbon source to the sealing glass (or a sealing glass material) In the case, the carbon derived from the carbon source is contained in the glass material for sealing; (2) a part of the carbon derived from the bonding component (organic resin) or the organic solvent derived from the sealing material paste remains (2) The method is preferable because it is not necessary to add a special step to control the amount of carbon. Further, even if the method is other than the above, the amount of carbon in the sealing material layer 5 can be made 5 to 2 in terms of mass ratio. 〇〇ρρηι range In the method of the above (1), for example, when the glass is pulverized, an organic substance such as an alcohol is added as a carbon source. This method also has a function of a pulverization aid because of an alcohol, and the like, The pulverization efficiency is not limited to organic substances, and may be carbon such as carbon black or graphite. Even if the amount of carbon added to the sealing glass or the carbon source such as carbon is set to one, Since the stone is changed according to the firing conditions, the correlation between the carbon source added and the carbon source added after firing is determined in advance. Then, the sealing material layer 5 is controlled accordingly. In addition, the amount of carbon source added may be constant, and the firing conditions (temperature, time) may be changed to control the carbon amount. (2) The method is to add a carbon source to the sealing glass, and A method of leaving a part of carbon of a binder component (organic resin) or an organic solvent derived from a carrier used for paste formation. In this case, the composition of the carrier, the composition ratio of the sealing glass material to the carrier when the paste is formed, the firing conditions, and the temperature from the temperature range in which the resin is burned or decomposed to the temperature at which the sealing glass is softened The rate of temperature rise and hold time within the range become important. The carrier used in the production of the related sealing material paste is not particularly limited in the case of the method (1), but in the case of the method (2), it is preferred to use a cellulose resin (especially nitrocellulose) in terpineol. It is obtained by dissolving in an organic solvent such as butyl carbitol acetate or ethyl carbitol acetate. (2) The carrier used in the method is preferably such that 15 to 5 mass% of nitrocellulose is selected from 95 to >. 5 mass% selected from the group consisting of pine, kikabitol acetate vinegar and decyl carbitol. Acetic acid® is prepared by dissolving any one of organic solvents or two or more kinds of mixed solvents. Further, in the case of the paste of the glass material for sealing, it is preferable to use 7 to 90% by mass of the sealing glass material and 10 to 30% by mass of the carrier to make a sealing material paste for 6 weeks. The controllability of the residual carbon amount of the sealing material layer 5 can be improved by using such a carrier and sealing the paste. In the baking step of the sealing material paste coating layer, generally, in order to reduce the glass material for sealing, the resin component can be completely decomposed, burned, and the conditional body can be δ' by the temperature at which the resin is decomposed and burned. And the temperature range of the temperature at which the sealing glass is softened and flowed is slowed down by 21 201043586, and the temperature rise rate is maintained for about 1 to 15 hours, which promotes decomposition and combustion of the resin. When the method of (2) is applied, an appropriate amount of carbon can be left in the sealing material layer 5 by controlling the decomposition and combustion steps of the resin. As described above, the resin component in the carrier is preferably nitrocellulose. The nitrocellulose is decomposed and burned at a temperature in the range of 200 to 250 tons. For example, the tin-scale acid glass medium softens the flow at a temperature of 26 〇 to 4 〇 (rc range. Therefore, 200 to 40 (the temperature range of TC is important. If the above-mentioned carbon-containing sealing material layer 5 can be controlled by It is obtained at a temperature increase rate of 2 to 400 ° C. Specifically, it is preferably heated at a temperature of 1 to 25 ° C/min in a temperature range of 200 to 40 (when the temperature is increased by a batch furnace or the like). In order to maintain the temperature in the furnace at 200 to 40 (in the TC temperature range, it is preferable to set the holding time to less than 50 minutes. Next, as shown in the second (a), the second glass is used. The substrate 3 (which has the sealing material layer 5) and the first glass substrate 2 (having the element forming region 2a' and the device forming region 2a having separately fabricated electronic components) are fabricated such as OELD, PDP, and LCD. An electronic device 1 such as an illumination device using an FPD or an OEL element or a solar cell such as a dye-sensitized solar cell, that is, as shown in the second (b), the first glass substrate 2 and the second glass are used. The surface of the substrate 'with the element forming region 2a is opposite to the surface on which the sealing material layer 5 is provided. In the element formation region 2a of the first glass substrate 2, a gap is formed by the thickness of the sealing material layer 5. Next, as shown in the second (c), the second glass substrate 3 is transmitted (or the first The glass substrate 2) irradiates the sealing material layer 5 with electromagnetic waves such as laser light or infrared rays. When laser light 6 is used as the electromagnetic wave 6, the laser light is irradiated along the side of the frame-shaped sealing material 22 201043586. There is no particular limitation, and laser light from a semiconductor laser, a tannic acid gas laser, a pseudo-molecular laser, a YAG laser 'HNe laser, etc. can be used. The output of the laser light is matched with the thickness of the sealing material layer 5, and the like. As appropriate, it is preferable to apply the heating temperature (processing temperature) of the sealing material layer 5 to the range of 500 to 800 ° C (for example, an output in the range of 25 to 85 W). If the heating temperature of the sealing material layer 5 is less than 500 ° c, there is a concern that the bubble cannot be sufficiently grown when the sealing material layer 5 is melted. Further, if the heating temperature of the sealing material layer 5 exceeds 800 ° C, it is easy to cause turtles on the glass substrates 2 and 3 when heated. Crack, broken, etc. The sealing material layer 5 is sequentially melted from the portion irradiated by the laser light scanned along the same, and is solidified and solidified on the first glass substrate 2 at the end of the laser light irradiation. Then, the sealing material layer is spread over the sealing material layer. The entire circumference of 5 is irradiated with laser light to form a sealing layer 4 for sealing the second glass substrate 2 and the second glass substrate 3 as shown in Fig. 2(d). Since the sealing material layer 5 is bubbled during melting When the film thickness is reduced and the film thickness is reduced, it is possible to suppress the breakage of the glass substrates 2 and 3, the breakage and peeling of the sealing layer 4, and the peeling of the film 7. In this case, the first glass substrate 2 is used. 2 The glass panel composed of the glass substrate 3 and the sealing layer 4 is formed into an electronic skirt which (4) the sub- 7L member is hermetically sealed in the component 侃 region h. The reliability of the electronic device h = the hermetic sealing property caused by the sealing layer 4, and the bonding strength between the glass substrate 'and the sealing layer 4, and the like. According to the present embodiment, since the airtightness and the adhesion strength can be improved by 23 201043586, the electronic device 1 excellent in the degree can be obtained. In addition, the glass panel to be hermetically sealed in (4) is not limited to the electronic device's rhyme that can be applied to t sub-components or glass members (such as building materials) such as double-layer vacuum glass. EXAMPLES Next, specific examples of the present invention and evaluation results thereof will be described. In addition, the following description is not intended to limit the invention, and may be changed in the form of the invention. (Example 1) Preparation of Imol/〇 indicates: SnO (; 55.7%;), SnOW.l%), P2〇5 (32.5%), ZnO (4.8〇/.), Al2〇3 (2.3 %), si〇2 (1,6%) tin-phosphate glass medium (glass transition point = 28〇t), bismuth ruthenate ((Zr0)2P207) powder as low expansion filler, and Fe2〇 3_Cr2〇3_c〇2〇3_Mn〇-based laser absorbing material (average particle diameter=2μηι). Further, 4% by mass of nitrocellulose as a binder component was dissolved in 96 mass. /. A carrier is prepared from a solvent composed of butyl carbitol acetate. Next, 51% by volume of the above-mentioned tin-filled glass medium, 45.2% by volume of the acid-recording powder, and 3 _8 of the laser absorbing material were used. A glass material (coefficient of thermal expansion: 45 x 10 7 / ° C) for sealing was prepared by mixing. A sealing material paste was prepared by mixing 84% by mass of the sealing glass material with 16% by mass of the carrier. Next, the sealing material paste was applied by screen printing method in the outer peripheral region of the second glass substrate (size: 9〇x9〇x〇.7mmt) composed of alkali-free glass (thermal expansion coefficient: 38xl (T7/°C)). After coating (line width: 500 μm), it was dried according to 12 (TC x 10 minutes. The film was formed on the surface of the second glass substrate. 24 201043586 The coating layer of the dried sealing material paste was applied. The heating rate i 5 /min is raised to 250 ° C, and is maintained at this temperature for 5 minutes, and the binder (nitrocellulose) is decomposed and burned (hereinafter referred to as "debonding agent treatment"), and then heated. The temperature was raised to 350 ° C / min at a rate of 15 ° C / min. (:, from 350 ° C (softening point) at a temperature increase rate of 50 ° C / min to 43 (rc, and maintained at this temperature for 1 而 minutes to complete the firing. This proceeds to form a layer of sealing material having a film thickness of "paw".

藉由上述密封材料層的形成步驟,便使密封材料層中 以15%的體積比例存在大小(長軸)為5〜1〇μιη的氣泡。氣泡 的體積比例與大小係利用SEM觀察密封材料層的截面而進 行測疋又,後封材料層的碳量係200ppm。密封材料層的 碳量係使用碳硫分㈣置EMIA_32GV(商品名,堀場製作所 製)所測得的值。其他實施例亦同。 將具有上㈣封㈣層的第2玻璃基板、與具有元件形 成區域的第1玻璃基板(由與第2玻璃基板同組成 '同形狀的 無驗玻璃所構紅具FT⑽的玻璃基板)進行制。接著, 透過第2玻璃基板’將波長_nm、輸出肩的雷射光以 掃描速㈣贿㈣層進行肋,藉•密封材料 層予以熔融並急冷固化,將第1玻璃基板與第2玻璃基板予 以密封。密封材料層施行f射照射時的力α溫度係柳 (以輕射溫度計測定)。 密封層(密封材料層的炫融•固化層)的膜厚τ 膜厚度了2對密封材料層膜厚Τι的比(Τ2/Τι)、密抑M2 體積比例及大小(長轴)、密封層體積ν2對密崎料層體積 25 201043586 二的比(V2/Vi),係由密封層利用SEM進行戴面觀察而求 得。結果,密封層的膜厚度L係58μηι、犋厚比(τ2/τ〇係 ⑼2、體積比(V2/Vl)係ι·08、氣泡體積比例係2〇%、氣泡的 大小(長軸)係15〜20μΙη。另外,體積比係依密封材料層與密 封層的載面積比而求得的值。將此種電子裳置提供給後述 特性評估。 (實施例2〜5) 除將密封材料層施行脫黏結劑處理的時間(以下稱「脫 黏結劑時間」)、對㈣材料層所照射的雷射光輸出、及根 據其將密封材料層加工溫度變更為表1所示條件之外,其餘 均如同實施例1般地實施對第2玻璃基板的密封材料層形成 步驟、以及第1玻璃基板與第2玻璃基板的雷射密封步驟。 也封材料層的碳量、密封材料層與密封層的膜厚Τ,、τ2、 膜厚比αντ,)、氣泡的體積比例與大小(長軸)、體積比 (V2/Vl) ’係如同實施例1施行測定。測定結果如表1所示。 此種電子裝置提供給後述特性評估。 (實施例6) 將與實施例1相同組成的錫-磷酸系玻璃介質78體積 /〇、堇青石粉末2〇體積%、及雷射吸收材2體積%進行混合 而製成密封用破璃材料(熱膨脹係數:72><1〇_7/。〇。將密封 用玻螭材料84質量0/〇與載體16質量%進行混合而調製得密 子材料θ。接著,在由鈉軒玻璃(熱膨脹係數:87><1〇-7/。〇) 所構成之具FTO膜的第2玻璃基板(尺寸:looxiooxi.immt) 外周區域,將密封材料膏以網版印刷法施行塗佈(線寬: 26 201043586 500μηι)後,依照與實施例丨相同條件施行乾燥步驟、脫黏結 劑步驟、燒成步驟。 將具有上述密封材料層的第2玻璃基板、與具有元件形 成區域的第1玻璃基板(由與第2玻璃基板同組成、同形狀的 鈉鈣玻璃所構成之具FTO膜之玻璃基板)進行積層。接著, 透過第2玻璃基板,將波長舛如爪、輸出25W的雷射光依 5 m m / s掃描速度對密封材料層施行照射,藉由將密封材料層 〇 丨以溶融並急冷固化’而將第1玻璃基板與第2玻璃基板予 U密封。密封材料層的碳量、密封材料層與密封層的膜厚 T1、丁2、膜厚比(τντο、氣泡的體積比例與大小(長軸)、體 積比CVWO ’係如同實施例i般進行測定。測定結果如表2 . 所示。將此種電子裝置提供給後述特性評估。 (比較例1〜2) 使用採用料、玻璃介質(玻璃轉移點=36q。⑺的密封用 破璃材料(熱膨脹係數=72xl0力。C),如同實施例6,實施對 〇 第2玻璃基板的密封材料層形成步驟、以及第1玻璃基板與 第2破璃基板的雷射密封步驟。密封材料層的形成步驟係藉 由百先以升溫速度5t:/min升溫至2耽,並在此溫度保持5 分鐘以施行脫黏結劑處理後,再以升溫速度π—升溫至 ,依該溫度保持1〇分鐘而實施。密封材料層的碳量、 2 ί材料層與㈣層的膜厚1、[、膜厚比(了仰、氣泡的 體積比例與大小(長轴)、體積比(Μ),係如表2所示。將 =種電子装置提供給後述特性評估。比欄1係使用未具有 T0犋的玻璃基板之例。 27 201043586 (比較例3〜4) 除將密封材料層的形成步驟進行如下之變更外,其餘 均如同實施例1般地實施對第2玻璃基板的密封材料層形 成、以及第1玻璃基板與第2玻璃基板的雷射密封。密封材 料層的形成步驟係藉由首先將經乾燥後的密封材料膏塗佈 層依升溫速度5°C/min升溫至250。(:並在此溫度保持3〇分铲 (比較例3)及60分鐘(比較例4)以進行脫黏結劑處理後,再以 升溫速度5°C/min升溫至430。(:並在該溫度保持1〇分於By the step of forming the above-mentioned sealing material layer, bubbles having a size (long axis) of 5 to 1 〇 μη are present in the sealing material layer at a volume ratio of 15%. The volume ratio and size of the bubbles were measured by SEM observation of the cross section of the sealing material layer, and the carbon content of the post-sealing material layer was 200 ppm. The amount of carbon in the sealing material layer is a value measured by carbon sulphur (4) EMIA_32GV (trade name, manufactured by Horiba, Ltd.). Other embodiments are the same. The second glass substrate having the upper (four) seal (four) layer and the first glass substrate having the element formation region (a glass substrate having the same shape as the second glass substrate and having the same shape as the red glass FT (10)) . Then, the ribs are irradiated with the wavelength of _nm and the laser beam of the output shoulder at the scanning speed (four) through the second glass substrate, and the sealing material layer is melted and quenched and solidified, and the first glass substrate and the second glass substrate are given. seal. The force α temperature when the sealing material layer was subjected to f-irradiation was measured by a light-emitting thermometer. Film thickness τ of the sealing layer (smoothing and solidifying layer of the sealing material layer) Thickness of the film thickness of the pair of sealing material layers Τι (Τ2/Τι), M2 volume ratio and size (long axis), sealing layer The ratio of the volume ν2 to the volume of the Misha material layer 25 201043586 (V2/Vi) was determined by wearing a sealing layer by SEM. As a result, the film thickness L of the sealing layer was 58 μm, the thickness ratio (τ2/τ〇 system (9) 2, the volume ratio (V2/Vl) was ι·08, the bubble volume ratio was 2〇%, and the bubble size (long axis) was Further, the volume ratio is a value obtained by the ratio of the load-bearing area of the sealing material layer to the sealing layer. This electronic coating is provided for evaluation of characteristics described later (Examples 2 to 5) except for the sealing material layer. The time for debonding treatment (hereinafter referred to as "debonding agent time"), the laser light output to (4) the material layer, and the processing temperature of the sealing material layer are changed to the conditions shown in Table 1, except for the conditions shown in Table 1. The sealing material layer forming step for the second glass substrate and the laser sealing step for the first glass substrate and the second glass substrate are carried out as in the first embodiment. The carbon amount of the material layer, the sealing material layer and the sealing layer are also sealed. The film thickness Τ, τ2, film thickness ratio αντ,), volume ratio and size (long axis) of the bubble, and volume ratio (V2/Vl) were measured as in Example 1. The measurement results are shown in Table 1. Such an electronic device is provided for evaluation of characteristics described later. (Example 6) 78 parts by volume of a tin-phosphate type glass medium having the same composition as in Example 1, 2% by volume of cordierite powder, and 2% by volume of a laser absorbent material were mixed to obtain a glass material for sealing. (The coefficient of thermal expansion: 72 < 1 〇 _7 / 〇. The sealing glass material 84 mass 0 / 〇 was mixed with the carrier 16% by mass to prepare the dense material θ. Next, in the sodium gin glass ( Thermal expansion coefficient: 87><1〇-7/.〇) The outer peripheral region of the second glass substrate (size: looxiooxi.immt) having the FTO film formed, and the sealing material paste was applied by screen printing (line) After the width: 26 201043586 500 μηι), the drying step, the debonding agent step, and the firing step were carried out under the same conditions as in Example 将. The second glass substrate having the above-mentioned sealing material layer and the first glass substrate having the element forming region were used. (Glass substrate with FTO film composed of soda-lime glass having the same composition and shape as the second glass substrate) is laminated. Then, the second glass substrate is passed through, and the laser light having a wavelength of, for example, a claw is outputted at 25 W. Mm / s scanning speed to the sealing material layer In the row irradiation, the first glass substrate and the second glass substrate are U-sealed by laminating and sealing the sealing material layer. The carbon amount of the sealing material layer, the thickness of the sealing material layer and the sealing layer T1, D, 2, film thickness ratio (τντο, volume ratio and size of the bubble (long axis), volume ratio CVWO ' was measured as in Example i. The measurement results are shown in Table 2. This electronic device is provided to be described later. (Comparative Example 1 to 2) Using a glass material (glass transition point = 36q (7), a glass material for sealing (thermal expansion coefficient = 72 x 10 force, C), as in Example 6, the second aspect was carried out. a sealing material layer forming step of the glass substrate and a laser sealing step of the first glass substrate and the second glass substrate. The step of forming the sealing material layer is performed by heating the temperature to a temperature of 5 t:/min to 2 耽, and After the temperature is maintained for 5 minutes for debonding treatment, the temperature is raised to π-temperature, and the temperature is maintained for 1 minute. The amount of carbon in the sealing material layer, the thickness of the material layer and the thickness of the (four) layer. 1, [, film thickness ratio The volume ratio and size (long axis) and volume ratio (Μ) of the bubble are shown in Table 2. The electronic device was supplied to the characteristic evaluation described later, and the column 1 was an example in which a glass substrate having no T0 。 was used. 27 201043586 (Comparative Examples 3 to 4) The formation of the sealing material layer for the second glass substrate, and the first glass substrate and the first embodiment were carried out in the same manner as in Example 1 except that the steps of forming the sealing material layer were changed as follows. 2 Laser sealing of the glass substrate. The sealing material layer is formed by first heating the dried sealing material paste coating layer to 250 at a heating rate of 5 ° C / min. (: At this temperature, the shovel (Comparative Example 3) and 60 minutes (Comparative Example 4) were held at this temperature to carry out the debonding agent treatment, and then the temperature was raised to 430 at a temperature increase rate of 5 ° C/min. The temperature remains 1 于

J W 施。密封材料層的碳量'密封材料層與密封層的膜厚了、 丁2、膜厚比(τντο、氣泡的體積比例與大小(長轴)、體積& (WVO,係如表2所示。將此種電子裝置提供給後述特性坪 估。 其次,就實施例1〜6與比較例1〜4的玻璃面板外觀,呼 估玻璃基板有無龜裂、密封層有無龜裂、及FTO瞑有無制 離。外觀係利用光學顯微鏡進行觀察並評估。又,測定各 玻璃面板的氣密性。氣密性係使用氦氣測漏測試進行★乎 估。該等測定•評估結果係如表1與表2所示。表1與表2中 合併記載玻璃面板的製造條件。 28 201043586 [表i]J W Shi. The amount of carbon in the sealing material layer 'the thickness of the sealing material layer and the sealing layer, the ratio of the thickness of the sealing layer 2, the film thickness (τντο, the volume ratio and size of the bubble (long axis), the volume & (WVO, as shown in Table 2) This electronic device was supplied to the characteristic evaluation described later. Next, the appearance of the glass panels of Examples 1 to 6 and Comparative Examples 1 to 4 was used to estimate whether or not the glass substrate was cracked, whether the sealing layer was cracked, and whether FTO was present or not. The appearance is measured and evaluated by an optical microscope. Moreover, the airtightness of each glass panel is measured. The airtightness is measured by a helium leak test. The results of the measurements and evaluation are shown in Table 1. Table 2 shows the manufacturing conditions of the glass panel in combination with Table 1 and Table 2. 28 201043586 [Table i]

實施例1 實施例2 實施例3 實施例4 實施例5 密封用 玻璃 材料 玻璃 介質 材料 錫-碌酸系玻璃 玻璃轉移點(°c) 280 280 280 280 280 調配比(體積%) 51 51 51 51 51 低膨脹 填充材 材料 磷酸锆 調配比(體積%) 45.2 45.2 45.2 45.2 45.2 雷射 材料材 平均粒徑(μηι) 2 2 2 2 2 調配比(體積%) 3.8 3.8 3.8 3.8 3.8 熱膨脹係數(χ1χ(Τ7/°〇 45 45 45 45 45 玻璃基板 材料 具FTO之無驗玻璃 板厚(mm) 0.7 0.7 0.7 0.7 0.7 燒成 步驟 脫黏結劑時間(min) 5 5 5 5 30 燒成溫度rc) 430 430 430 430 430 密封 材料層 厚度 ΤΙ(μηι) 57 57 57 57 57 氣泡體積比例(%) 15 15 15 15 15 氣泡大小(μΐΏ) 5-10 5-10 5-10 5-10 5-20 碳量(ppm) 200 200 200 200 100 雷射光 波長(nm) 940 940 940 940 940 輸出(W) 36 38 40 42 36 掃描速度(mm/s) 10 10 10 10 10 加工溫度(°c) 650 690 720 750 650 密封層 厚度 Τ2(μιη) 58 58 59 59 58 厚度比(T/TD 1.02 1.02 1.04 1.04 1.02 體積比(Vz/VO 1.08 1.10 1.12 1.14 1,03 氣泡體積比例(%) 20 23 24 28 18 氣泡大小(μηι) 15-20 15-25 15-30 15-30 15-25 評估 結果 外觀 基板龜裂 無 無 無 無 無 密封層龜裂 無 無 無 無 無 FTO膜剝離 無 無 無 無 無 接著良否 〇 〇 〇 〇 〇 氣密性 有 有 有 有 有 29 201043586 [表2]Example 1 Example 2 Example 3 Example 4 Example 5 Glass material for sealing Glass dielectric material Tin-ruthenium-based glass transition point (°c) 280 280 280 280 280 Formulation ratio (% by volume) 51 51 51 51 51 Low expansion filler material Zirconium phosphate compounding ratio (% by volume) 45.2 45.2 45.2 45.2 45.2 Average particle size of laser material (μηι) 2 2 2 2 2 Formulation ratio (% by volume) 3.8 3.8 3.8 3.8 3.8 Thermal expansion coefficient (χ1χ( Τ7/°〇45 45 45 45 45 Glass substrate material with FTO glass thickness (mm) 0.7 0.7 0.7 0.7 0.7 firing step debonding agent time (min) 5 5 5 5 30 firing temperature rc) 430 430 430 430 430 Sealing material layer thickness μ(μηι) 57 57 57 57 57 Bubble volume ratio (%) 15 15 15 15 15 Bubble size (μΐΏ) 5-10 5-10 5-10 5-10 5-20 Carbon content ( Ppm) 200 200 200 200 100 Laser wavelength (nm) 940 940 940 940 940 Output (W) 36 38 40 42 36 Scanning speed (mm/s) 10 10 10 10 10 Processing temperature (°c) 650 690 720 750 650 Sealing layer thickness Τ2 (μιη) 58 58 59 59 58 Thickness ratio (T/TD 1.02 1.02 1.04 1.04 1.02 by volume ratio (Vz /VO 1.08 1.10 1.12 1.14 1,03 Bubble volume ratio (%) 20 23 24 28 18 Bubble size (μηι) 15-20 15-25 15-30 15-30 15-25 Evaluation results Appearance substrate cracks without or without No seal layer cracks, no or no, no FTO film peeling, no, no, no, no, no, no, no, no, no air, no air tightness, there are some 29 201043586 [Table 2]

實施例6 比較例ί |比較例2 比較例3 |比較例4 玻螭 材料 錫_磷酸系 玻璃 鉍系玻璃 錫-蛾画 1系玻璃 介質 玻璃轉移點(°C) 280 360 360 280 280 密封用 調配比(體積%) 78 73.5 73.5 51 51 玻璃 低膨張 材料 菫青石 __ 磷S 楚锆 材料 填充材 調配比(體積%) 20 24.5 24.5 45.2 45.2 雷射 平均粒徑(μιη) 2 2 2 2 2 材料材 調配比(體積%) 2 2 2 3.8 3.8 熱膨脹係數(χ10_7/°〇 72 Ί2 72 45 45 玻璃基梭 材料 鈉鈣玻璃* 具FTO之 無鹼破璃 板厚(mm) 1.1 1.1 1.1 0.7 「0.7 燒成 脫黏結劑時間(min) 5 5 5 30 60 ------- 步驟 燒成溫度(°c) 430 460 460 430 430 厚度ΤΚμίΏ) 55 15 15 57 57 密封 氣泡體積比例(%) 20 0.1 0.1 5 5 材料層 氣泡大小(μηι) 3-7 0.1未满 0.1未满 2-5 2-5 碳量(ppm) 200 35 35 35 40 波長(nm) 940 940 940 940 940 雷射光 輸出(W) 25 72 70 36 36 — 掃描速度(mm/s) 5 5 5 10 10 加工溫度(°c) 570 600 570 650 650 ----- 厚度 Τ2(μΐΏ) 52 10.2 11 50 50 — 厚度比(τ/Π) 0.95 0.68 0.73 0.88 0.88 ------- 密封層 體積比(Vj/Vj) 1.07 1 1 1 - 1 —·—-- 氣泡體積比例(%) 27 0.1 0.1 5 5 ------ 氣泡大小(um) 5-10 0.01 ] 0.01 2-5 2-5 ------- 基板龜裂 無 有 無 無 -----— 無 ~~~----^ 密封層龜裂 無 無 無 無 _____- 無 —-— 評估 結果 外觀 FTO膜之制離 無 — 有 有 有 ' --- 接著良否 〇 X X X X ~--- 氣密性 有 無 1無— 無 無 ----------—J * :實施例6與比較例2具有FTO膜’比較例1不具FT〇犋。 由表1與表2中得知’由實施例卜6所獲得的玻璃面板均 未發生玻璃基板與密封層的龜裂情形’亦無FlO膜制離情 30 201043586 形發生,且氣密性優異。理由係利用密封材料層的熔融步 驟而成長氣泡,俾抑制密封材料層的膜厚減少所致。相對 於此得知,在使用未設有FTO膜之玻璃基板的比較例丨中, 玻璃基板會出現龜裂,又使用設有FT〇膜之玻璃基板的比 較例2~4 ’ FTO膜會出現剝離情形,導致密封層的接著狀態 與氣密性受損。 產業之可利用性 本發明的具有密封材料層之玻璃構件,係可有用於作 為在製造平板型顯示器裝置或太陽電池面板時所使用的玻 璃基板,該平板型顯示器裝置或太陽電池面板係具有在呈 相對向配置的2片玻璃基板間,密封入顯示元件或太陽電池 元件之構造者。又,本發明的電子裝置係具有上述構造的 平板型顯示器裝置或太陽電池面板。 另外,2009年5月8日所提出申請的日本專利申請案 2009-113282號之說明書、申請專利範圍、圖式及摘要等全 部内容均爰引於本案中’並融入為本發明說明書的揭示。 【圖式簡單說明】 第1圖係表示本發明實施形態的電子裝置構造之剖視 圖。 第2(a)〜(d)圖係表示本發明實施形態的電子裝置之製 造步驟的剖視圖。 第3圖係表示第2圖所示電子裝置的製造步驟中,所使 用之第1玻璃基板的平面圖。 第4圖係第3圖的沿A-A線之剖視圖。 31 201043586 第5圖係第2圖所示電子裝置的製造步驟中,所使用之 第2玻璃基板的平面圖。 第6圖係第5圖的沿A-A線之剖視圖。 第7圖係將第2圖所示之第1與第2玻璃基板放大表示的 剖視圖。 第8圖係將第1圖所示之電子裝置放大表示的剖視圖。 【主要元件符號說明】 1...電子裝置 3a...第2密封區域 2...第1玻璃基板 4...密封層 2a...元件形成區域 5...密封材料層 2b...第1密封區域 6...電磁波 3...第2玻璃基板 7...薄膜 32Example 6 Comparative Example ί | Comparative Example 2 Comparative Example 3 | Comparative Example 4 Glass Material Tin - Phosphate Glass Oxide Glass Tin - Moth Painting 1 Series Glass Media Glass Transfer Point (°C) 280 360 360 280 280 For sealing Formulation ratio (% by volume) 78 73.5 73.5 51 51 Glass low expansion material cordierite __ Phosphorus S Chu Zircon material filling ratio (% by volume) 20 24.5 24.5 45.2 45.2 Laser average particle size (μιη) 2 2 2 2 2 Material mix ratio (% by volume) 2 2 2 3.8 3.8 Thermal expansion coefficient (χ10_7/°〇72 Ί2 72 45 45 Glass-based shuttle material soda-lime glass* FTO-free alkali-free glass plate thickness (mm) 1.1 1.1 1.1 0.7 0.7 firing debonding agent time (min) 5 5 5 30 60 ------- step firing temperature (°c) 430 460 460 430 430 thickness ΤΚμίΏ) 55 15 15 57 57 sealed bubble volume ratio (%) 20 0.1 0.1 5 5 Material layer bubble size (μηι) 3-7 0.1 under 0.1 less than 2-5 2-5 carbon (ppm) 200 35 35 35 40 wavelength (nm) 940 940 940 940 940 laser light output ( W) 25 72 70 36 36 — Scanning speed (mm/s) 5 5 5 10 10 Processing temperature (°c) 570 600 570 650 650 --- -- Thickness Τ 2 (μΐΏ) 52 10.2 11 50 50 — Thickness ratio (τ/Π) 0.95 0.68 0.73 0.88 0.88 ------- Sealing layer volume ratio (Vj/Vj) 1.07 1 1 1 - 1 —·— -- Bubble volume ratio (%) 27 0.1 0.1 5 5 ------ Bubble size (um) 5-10 0.01 ] 0.01 2-5 2-5 ------- No cracks in the substrate - ----- No~~~----^ Sealing layer cracks without or without _____- No--- Evaluation results Appearance FTO film is not separated - There is a '-- Then good or bad 〇XXXX ~--- Airtightness is present or not - None - None ------------- J *: Example 6 and Comparative Example 2 have FTO film 'Comparative Example 1 does not have FT〇犋. It is known from Tables 1 and 2 that the glass sheets obtained in Example 6 did not have cracking of the glass substrate and the sealing layer, and the F10 film was not formed, and the airtightness was excellent. The reason is that the bubbles are grown by the melting step of the sealing material layer, and the film thickness of the sealing material layer is suppressed from being reduced. On the other hand, in the comparative example using a glass substrate not provided with an FTO film, a crack occurred in the glass substrate, and a comparative example 2 to 4 'FTO film having a glass substrate provided with an FT film was used. In the case of peeling, the sealing state and airtightness of the sealing layer are impaired. INDUSTRIAL APPLICABILITY A glass member having a sealing material layer of the present invention can be used as a glass substrate used in manufacturing a flat-panel display device or a solar cell panel, and the flat-panel display device or solar cell panel has A structure in which a display element or a solar cell element is sealed between two glass substrates arranged in opposite directions. Further, the electronic device of the present invention has the flat-panel display device or the solar cell panel of the above configuration. In addition, the entire contents of the specification, the scope of the application, the drawings, and the abstract of the Japanese Patent Application No. 2009-113282, filed on May 8, 2009, are hereby incorporated by reference in its entirety herein in BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing the structure of an electronic device according to an embodiment of the present invention. 2(a) to 2(d) are cross-sectional views showing the steps of manufacturing the electronic device according to the embodiment of the present invention. Fig. 3 is a plan view showing the first glass substrate used in the manufacturing process of the electronic device shown in Fig. 2. Fig. 4 is a cross-sectional view taken along line A-A of Fig. 3. 31 201043586 Fig. 5 is a plan view showing a second glass substrate used in the manufacturing process of the electronic device shown in Fig. 2. Fig. 6 is a cross-sectional view taken along line A-A of Fig. 5. Fig. 7 is a cross-sectional view showing the first and second glass substrates shown in Fig. 2 in an enlarged manner. Fig. 8 is a cross-sectional view showing an enlarged view of the electronic device shown in Fig. 1. [Description of main component symbols] 1...electronic device 3a...second sealing region 2...first glass substrate 4...sealing layer 2a...element forming region 5...sealing material layer 2b. ..1st sealing area 6...electromagnetic wave 3...second glass substrate 7...film 32

Claims (1)

201043586 七 1.201043586 VII 1. 、申請專利範圍: 種具有密封材料層之玻璃構件,其特徵在於具備有: 破璃基板’係具有密封區域;以及 密封材料層,係設置於前述玻璃基板的前述密封區 ㈣〜且由3有雄、封玻璃、低膨脹填充材及電磁波吸收 材的松封用麵材料之燒成層構成; '、中則述密封材料層係含有依體積比例計 1〇〜3〇%範圍的氣泡,且含有依質量比例計5G〜細ppm範 圍的礙。 2·如=專·圍第i項之具有密封材料層之玻璃構件, 其中前述氣泡的大小係〇 範圍。 3. 如申請專利範圍第13戈2項之具有密封材料層之玻璃構 件,其中前述低膨脹填充材係由從二氧化妙、氧化銘、 二氧化锆、矽酸鍅、蓳青石、磷酸锆系化合物、鈉鈣玻 璃及棚石夕酸玻璃中選出之至少!種材料所構成且前述Patent application scope: A glass member having a sealing material layer, comprising: a glass substrate having a sealing region; and a sealing material layer disposed on the sealing region (4) of the glass substrate - and having 3 a sintered layer of a sealing material for a male, a glass-sealed, a low-expansion filler, and an electromagnetic wave absorbing material; wherein the sealing material layer contains bubbles in a range of 1 〇 to 3 〇% by volume, and It contains a range of 5G to fine ppm depending on the mass ratio. 2. The glass member having the sealing material layer of the item i, wherein the size of the bubble is in the range of 〇. 3. The glass member having a sealing material layer according to the patent application No. 13 Ge 2, wherein the low-expansion filler material is derived from oxidizing, oxidizing, zirconium dioxide, strontium ruthenate, cordierite, zirconium phosphate Choose at least the compound, soda lime glass and shed stone acid glass! Material composed of the foregoing 密封用玻璃材料係含有依體積比例計卜鳩範圍的前 述低膨脹填充材。 4. 如申請專利範圍第⑴項中任_項之具有密封材料層 之玻璃構件,其中前述電磁波吸收材係由從Fe、cr、 ^^、(^、職以中選出之至少请金屬或含有前述金屬 的化合物所構成,且前述密封用玻璃材料依體積比例計 係含有〇·1~1〇%範圍的前述電磁波吸收材。 5. 如申請專利範圍第1至4項中任—項之具有密封材料層 之玻璃構件,其甲則述密封玻璃係由錫_磷酸系玻璃構 33 201043586 成。 6. —種具有密封材料層之玻璃構件的製造方法,其特徵在 於:在具有密封區域的玻璃基板之前述密封區域上’形 成含有密封玻璃、低膨脹填充材及電磁波吸收材的密封 用玻璃材料層’接著,將前述密封用玻璃材料層進行燒 成,而形成含有依體積比例計10〜30%範圍之氣泡,且 含有依質量比例計50〜200ppm範圍之碳的密封材料層。 7. —種電子裝置’其特徵在於具備有: 第1玻璃基板’係具有:具有電子元件的元件形成 區域、及設於前述元件形成區域外周側的第1密封區域; 第2玻璃基板,係具有對應於前述第1玻璃基板之前 述第1密封區域的第2密封區域,且具有前述第2密封區 域的表面係被配置成與前述第1玻璃基板具有前述第i 密封區域的表面呈相對向;以及 密封層,係依將前述第丨玻璃基板與前述第2玻璃基 板之間施行密封的方式’形成於前述第1密封區域與前 述第2密封區域之間,且由含有密封玻璃、低膨脹填充 材及電磁波吸收材的密封用玻璃材料之溶融固定層所 構成, 其中’前述密封層係含有依體積比例計為1〇〜35〇/〇 範圍的氣泡,且前述氣泡的大小係〇卜⑺叫爪範圍。 8. 如申請專利範圍第7項之電子裝置,其中前述第1玻璃基 板及前述第2玻璃基板中至少一者,係具有形成於具前 述密封區域的表面之從導電膜與絕緣膜中選出之至少i 34 201043586 種的薄膜。 9. 一種電子裝置之製造方法,其特徵在於: 準備第1玻璃基板,其中該第1玻璃基板係具有:具 有電子元件的元件形成區域、及設於前述元件形成區域 外周側的第1密封區域; 準備第2玻璃基板,其中該第2玻璃基板係具有第2 密封區域與密封材料層;該第2密封區域係對應於前述 第1玻璃基板之前述第1密封區域;而該密封材料層係形 ^ 成於前述第2密封區域上,且由含有密封玻璃、低膨脹 填充材及電磁波吸收材的密封用玻璃材料之燒成層構 成,並含有依體積比例計10〜30%範圍的氣泡,且含有 依質量比例計50〜200ppm範圍的碳; _ 將前述第1玻璃基板與前述第2玻璃基板,依具有前 ' 述第1密封區域的表面與具有前述第2密封區域的表面 呈相對向的方式,隔著前述密封材料層進行積層; 接著,透過前述第1玻璃基板或前述第2玻璃基板, 〇 將電磁波照射於前述密封材料層而施行局部性加熱,使 前述密封材料層溶融,而形成將前述第1玻璃基板與前 述第2玻璃基板之間加以密封的密封層。 10. 如申請專利範圍第9項之電子裝置之製造方法,其中在 前述密封材料層中所存在的前述氣泡大小係0.1〜50μπι 範圍。 11. 如申請專利範圍第9或10項之電子裝置之製造方法,其 中前述密封層係含有依體積比例計10〜35%範圍的氣 35 201043586 泡,且前述氣泡的大小係0.1〜ΙΟΟμιη範圍。 12. 如申請專利範圍第9至11項中任一項之電子裝置之製造 方法,其中將前述密封材料層的膜厚設為乃、且將前述 密封層的膜厚設為Τ2時,前述密封層係具有0.9Τ】以上且 Ι.ΙΤρΧ下範圍的膜厚Τ2。 13. 如申請專利範圍第9至12項中任一項之電子裝置之製造 方法,其中將前述密封材料層的體積設為乂,、且將前述 密封層的體積設為V2時,前述密封層係具有超過1\^且 ι.Μνρχ下範圍的體積ν2。 14. 如申請專利範圍第9至13項中任一項之電子裝置之製造 方法,前述第1玻璃基板及前述第2玻璃基板中至少一 者,係具有形成於具前述密封區域的表面之從導電膜與 絕緣膜中選出之至少1種的薄膜。 15. 如申請專利範圍第9至14項中任一項之電子裝置之製造 方法,其中將雷射光照射於前述密封材料層而使其熔 融。 36The glass material for sealing contains the above-mentioned low-expansion filler in the range of the volume ratio. 4. The glass member having a sealing material layer according to any one of the above-mentioned items of claim 1, wherein the electromagnetic wave absorbing material is selected from the group consisting of Fe, cr, ^^, (^, at least metal or containing The above-mentioned metal compound is composed of a compound of the above-mentioned metal, and the glass material for sealing contains the electromagnetic wave absorbing material in the range of 〇·1 to 1% by volume. The glass member of the sealing material layer, the sealing glass is made of tin-phosphate glass structure 33 201043586. 6. A method for manufacturing a glass member having a sealing material layer, characterized in that the glass has a sealing area A sealing glass material layer containing a sealing glass, a low-expansion filler, and an electromagnetic wave absorbing material is formed on the sealing region of the substrate. Then, the sealing glass material layer is fired to form a volume ratio of 10 to 30. a bubble of a range of %, and a layer of a sealing material containing carbon in a range of 50 to 200 ppm by mass. 7. An electronic device characterized by having: a first glass The plate plate has an element forming region having an electronic component and a first sealing region provided on an outer peripheral side of the element forming region, and a second glass substrate having a first sealing region corresponding to the first glass substrate. a sealing region, wherein a surface of the second sealing region is disposed to face a surface of the first glass substrate having the ith sealing region; and a sealing layer is formed by the second glass substrate and the first surface (2) A method of sealing between glass substrates is formed between the first sealing region and the second sealing region, and is provided by a molten fixing layer of a sealing glass material containing a sealing glass, a low expansion filler, and an electromagnetic wave absorbing material. The above-mentioned sealing layer contains air bubbles in a range of 1 〇 to 35 〇 / 依 in terms of volume ratio, and the size of the aforementioned air bubbles is called a claw range. 8. The electronic device according to claim 7 At least one of the first glass substrate and the second glass substrate has a conductive film formed on a surface having the sealing region and A film of at least i 34 201043586 selected from the insulating film. 9. A method of producing an electronic device, comprising: preparing a first glass substrate, wherein the first glass substrate has an element formation region having an electronic component, and a first sealing region provided on an outer peripheral side of the element forming region; and a second glass substrate having a second sealing region and a sealing material layer; wherein the second sealing region corresponds to the first glass substrate The first sealing region is formed on the second sealing region, and is composed of a firing layer of a sealing glass material containing a sealing glass, a low-expansion filler, and an electromagnetic wave absorbing material, and The air bubble is contained in a range of 10 to 30% by volume, and contains carbon in a range of 50 to 200 ppm by mass; _ the first glass substrate and the second glass substrate have a first sealing region The surface is opposed to the surface having the second sealing region, and is laminated via the sealing material layer; and then passes through the first glass In the plate or the second glass substrate, electromagnetic waves are irradiated onto the sealing material layer to perform localized heating, and the sealing material layer is melted to form a seal for sealing the first glass substrate and the second glass substrate. Floor. 10. The method of manufacturing an electronic device according to claim 9, wherein the bubble size present in the sealing material layer is in the range of 0.1 to 50 μm. 11. The method of manufacturing an electronic device according to claim 9 or claim 10, wherein the sealing layer comprises a gas 35 201043586 bubble in a range of 10 to 35% by volume, and the size of the bubble is in the range of 0.1 to ΙΟΟ μηη. The method of manufacturing an electronic device according to any one of claims 9 to 11, wherein the sealing material layer has a thickness of 密封2, and the sealing layer has a thickness of Τ2 The layer has a film thickness Τ2 of 0.9 Å or more and a range of Ι.ΙΤρΧ. 13. The method of manufacturing an electronic device according to any one of claims 9 to 12, wherein the sealing layer is formed when the volume of the sealing material layer is 乂, and the volume of the sealing layer is V2. It has a volume ν2 of more than 1\^ and ι.Μνρχ. The method of manufacturing an electronic device according to any one of claims 9 to 13, wherein at least one of the first glass substrate and the second glass substrate has a surface formed on a surface having the sealing region At least one selected from the group consisting of a conductive film and an insulating film. The method of manufacturing an electronic device according to any one of claims 9 to 14, wherein the laser light is irradiated onto the sealing material layer to be melted. 36
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