JPWO2010032818A1 - Memsセンサ及び検出装置 - Google Patents
Memsセンサ及び検出装置 Download PDFInfo
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- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
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- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
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Abstract
Description
前記第1の動作空間に第1の可動体が、前記第2の動作空間に第2の可動体が、前記第3の動作空間に第3の可動体が収納され、前記第1の可動体と前記第2の可動体および前記第3の可動体の主な動作方向が、互いに直交する3方向の別々の向きとなるように支持されているとともに、それぞれの前記動作空間内に、前記可動体の主な動作方向の移動量を検知する検知部が設けられており、
前記第1の動作空間を挟んで一方の側に第2の動作空間が他方の側に第3の動作空間が配置されて3つの前記動作空間が一列に並び、前記第2の動作空間の平面形状と前記第3の動作空間の平面形状が等しく、3つの前記動作空間の平面形状は、前記第1の動作空間の中心を通り且つ前記支持基板の表面と直交する中心線に対して180度の回転対称形状であることを特徴とするものである。
各出力側電極は、前記閉鎖部材の表面に形成された絶縁層内に埋設された第1リード層を介して外部接続パッドと電気的に接続されており、
少なくともいずれか1つの前記検知部では、複数の前記第1リード層のパターン長さが異なっており、パターン長さが長い前記第1リード層は、パターン長さが短い第1リード層に対して幅細で形成されていることが好ましい。これにより、各検知部において、各第1リード層と閉鎖部材間で生じる各寄生容量を一定に近づくように調整できる。
各出力側電極は、前記閉鎖部材の表面に形成された絶縁層内に埋設された第1リード層を介して外部接続パッドと電気的に接続されており、
各外部接続パッドの形成位置は、集積回路(IC)の端子部の位置に応じて設定されており、
各検知部において各第1リード層と前記閉鎖部材間の寄生容量が一定に近づくように、各第1リード層の長さ及び幅が調整されているものである。
前記MEMSセンサの各外部接続パッドと前記集積回路に設けられた各端子部とが導通接続されて差動出力を得ることを特徴とするものである。
図3と図4に示すように、第2の動作空間16内には、第2の可動体21と、第2の可動体21をY1−Y2方向に動作自在に支持する支持部である支持腕部22,24および弾性支持部26,27,28,29が設けられ、さらに検知部などの機能部が設けられている。これらの各機能部は、前記枠体層11と共に、機能層10となる1枚のシリコンウエハからエッチング工程で分離されて形成されたものである。
図1と図2および図7に示す第1の動作空間15内の各機能部は、SOI層の一方のシリコンウエハから枠体層11と共に分離されて形成されたものである。
MEMSセンサ1の製造方法は、まず、絶縁層を介して2枚のシリコンウエハが接合されたSOI層を使用して支持基板2と機能層10とを製造する。機能層10を形成するために、SOI層の一方のシリコンウエハの表面にレジスト層を形成する。レジスト層は、第1の穴12、第2の穴13および第3の穴14を有する枠体層11のパターンとなるように形成する。さらに、第1の動作空間15と第2の動作空間16および第3の動作空間17内の、第1の可動体41、第2の可動体21および第3の可動体21Aさらに可動電極や固定電極や支持導通部などの各種機能部となる部分もレジスト層で覆う。レジスト層から露出している部分でシリコンウエハの一部を、高密度プラズマを使用した深堀RIEなどのイオンエッチング手段で除去することで、枠体層11および各機能部が互いに分離されて形成される。
2 支持基板
3 第1の絶縁層
3a 枠状絶縁層
3b,3c,3d,3e 支持絶縁層
4 閉鎖部材
5 第2の絶縁層
6 接合層
6a シール接合層
6b,6c,6d,6e 支持接合層
10 機能層
11 枠体層
12 第1の穴
13 第2の穴
14 第3の穴
15 第1の動作空間
16 第2の動作空間
17 第3の動作空間
21 第2の可動体
21a,21b,21c,21d 可動電極
22,24 支持腕部
23,25 支持導通部
31,32 固定部
31b,31c,32b,32c 固定電極
21A 第3の可動体
41 第1の可動体
42 支持導通部
43A 右リンク部
43B 左リンク部
47a,47b 可動電極
51,53 固定部
51a,53a 固定電極
70,71,73,74,76,77,140〜145 第1リード層
80〜88 外部接続パッド
90〜98 端子部
100、111 集積回路(IC)
110 検査装置
113〜116、121〜124、130〜133 支持導通部
117〜120、125〜128、134〜137 固定部
Claims (9)
- 支持基板とこれに平行な閉鎖部材との間に枠体層が設けられ、前記枠体層に、厚さ方向に貫通する3つの穴が形成され、3つの前記穴の周囲で、前記支持基板と前記枠体層および前記枠体層と前記閉鎖部材が接合されて、3つの前記穴のそれぞれによって、外部から密閉され且つ互いに区分された第1の動作空間と第2の動作空間および第3の動作空間が形成されており、
前記第1の動作空間に第1の可動体が、前記第2の動作空間に第2の可動体が、前記第3の動作空間に第3の可動体が収納され、前記第1の可動体と前記第2の可動体および前記第3の可動体の主な動作方向が、互いに直交する3方向の別々の向きとなるように支持されているとともに、それぞれの前記動作空間内に、前記可動体の主な動作方向の移動量を検知する検知部が設けられており、
前記第1の動作空間を挟んで一方の側に第2の動作空間が他方の側に第3の動作空間が配置されて3つの前記動作空間が一列に並び、前記第2の動作空間の平面形状と前記第3の動作空間の平面形状が等しく、3つの前記動作空間の平面形状は、前記第1の動作空間の中心を通り且つ前記支持基板の表面と直交する中心線に対して180度の回転対称形状であることを特徴とするMEMSセンサ。 - 前記第2の可動体と前記第3の可動体は質量が同じであり、前記第1の可動体は、前記中心線を挟んで質量が左右対称である請求項1記載のMEMSセンサ。
- 前記第2の可動体と前記第3の可動体の主な動作方向は、前記支持基板の基板面と平行で且つ互いに直交する向きであり、前記第1の可動体の主な動作方向は、前記支持基板の基板面と垂直な向きである請求項1または2記載のMEMSセンサ。
- 前記枠体層と前記可動体と前記可動体を主な動作方向へ移動自在に支持する支持部および前記検知部は、共通の層から分離されて形成されている請求項1または2記載のMEMSセンサ。
- 2つのSi層が絶縁層を介して接合されたSOI層が使用され、一方のSi層が前記支持基板として使用され、他方のSi層が機能層として使用され、この機能層から、前記枠体層と前記可動体と前記可動体を主な動作方向へ移動自在に支持する支持部および前記検知部が分離されて形成されている請求項3記載のMEMSセンサ。
- 前記枠体層には、隣り合う前記動作空間を連通させる連通路が形成されている請求項1ないし5のいずれか1項に記載のMEMSセンサ。
- 各動作空間内に設けられた各検知部は、出力側電極と入力側電極とを有し、前記出力側電極が各検知部に複数設けられており、
各出力側電極は、前記閉鎖部材の表面に形成された絶縁層内に埋設された第1リード層を介して外部接続パッドと電気的に接続されており、
少なくともいずれか1つの前記検知部では、複数の前記第1リード層のパターン長さが異なっており、パターン長さが長い前記第1リード層は、パターン長さが短い第1リード層に対して幅細で形成されている請求項1ないし6のいずれか1項に記載のMEMSセンサ。 - 各動作空間内に設けられた各検知部は、出力側電極と入力側電極とを有し、前記出力側電極が各検知部に複数設けられており、
各出力側電極は、前記閉鎖部材の表面に形成された絶縁層内に埋設された第1リード層を介して外部接続パッドと電気的に接続されており、
各外部接続パッドの形成位置は、集積回路(IC)の端子部の位置に応じて設定されており、
各検知部において各第1リード層と前記閉鎖部材間の寄生容量が一定に近づくように、各第1リード層の長さ及び幅が調整されている請求項1ないし6のいずれか1項に記載のMEMSセンサ。 - 請求項7又は8に記載のMEMSセンサと、集積回路(IC)とを備え、各外部接続パッドの形成位置は、前記集積回路(IC)の端子部の位置に応じて設定されており、
前記MEMSセンサの各外部接続パッドと前記集積回路に設けられた各端子部とが導通接続されて差動出力を得ることを特徴とする検出装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010529804A JP5357166B2 (ja) | 2008-09-22 | 2009-09-18 | Memsセンサ及び検出装置 |
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JP2010529804A JP5357166B2 (ja) | 2008-09-22 | 2009-09-18 | Memsセンサ及び検出装置 |
PCT/JP2009/066351 WO2010032818A1 (ja) | 2008-09-22 | 2009-09-18 | Memsセンサ及び検出装置 |
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JP5299353B2 (ja) * | 2010-05-20 | 2013-09-25 | 株式会社デンソー | 半導体装置 |
JP5444199B2 (ja) | 2010-12-06 | 2014-03-19 | 日立オートモティブシステムズ株式会社 | 複合センサ |
GB201020722D0 (en) * | 2010-12-07 | 2011-01-19 | Atlantic Inertial Systems Ltd | Accelerometer |
US20150260752A1 (en) | 2012-10-12 | 2015-09-17 | Panasonic Corporation | Acceleration sensor |
JP6074854B2 (ja) * | 2013-06-06 | 2017-02-08 | パナソニックIpマネジメント株式会社 | 加速度センサ |
JP6032407B2 (ja) * | 2012-10-12 | 2016-11-30 | パナソニックIpマネジメント株式会社 | 加速度センサ |
CN109141473B (zh) * | 2018-08-17 | 2022-09-13 | 北方电子研究院安徽有限公司 | 一种变阻尼mems陀螺敏感结构测试装置 |
JP7134931B2 (ja) | 2019-08-28 | 2022-09-12 | 株式会社東芝 | センサ |
JP7123881B2 (ja) * | 2019-08-28 | 2022-08-23 | 株式会社東芝 | センサ |
EP3792637B1 (en) | 2019-09-11 | 2023-05-03 | Murata Manufacturing Co., Ltd. | Low-noise multi-axis mems accelerometer |
US11377346B2 (en) | 2019-09-11 | 2022-07-05 | Murata Manufacturing Co., Ltd. | Low-noise multi axis MEMS accelerometer |
JP7419866B2 (ja) * | 2020-02-19 | 2024-01-23 | セイコーエプソン株式会社 | 慣性センサー、電子機器、及び移動体 |
CN113607975A (zh) * | 2021-07-16 | 2021-11-05 | 杭州电子科技大学 | 一种用于mems传感器的位置检测与校准装置 |
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JPH04315056A (ja) * | 1991-04-12 | 1992-11-06 | Tokai Rika Co Ltd | 加速度センサ |
JP2765610B2 (ja) * | 1993-09-02 | 1998-06-18 | 株式会社デンソー | 半導体振動・加速度検出装置 |
JP3311633B2 (ja) * | 1997-04-04 | 2002-08-05 | 日本碍子株式会社 | センサユニット |
US6853067B1 (en) * | 1999-10-12 | 2005-02-08 | Microassembly Technologies, Inc. | Microelectromechanical systems using thermocompression bonding |
JP2003166999A (ja) * | 2001-12-03 | 2003-06-13 | Denso Corp | 半導体力学量センサ |
JP4174351B2 (ja) * | 2002-03-15 | 2008-10-29 | 株式会社豊田中央研究所 | 可動電極を有する装置、可動ミラー装置、振動型ジャイロスコープ及びこれらの製造方法 |
US6829937B2 (en) * | 2002-06-17 | 2004-12-14 | Vti Holding Oy | Monolithic silicon acceleration sensor |
GB0305857D0 (en) * | 2003-03-14 | 2003-04-16 | Europ Technology For Business | Accelerometers |
JP2006184013A (ja) * | 2004-12-24 | 2006-07-13 | Matsushita Electric Works Ltd | 加速度センサ |
JP4453587B2 (ja) * | 2005-03-24 | 2010-04-21 | 株式会社デンソー | 加速度センサ |
EP1760037A1 (en) * | 2005-09-06 | 2007-03-07 | Infineon Technologies SensoNor AS | Method for manufacturing micromechanical structures. |
JP2007226853A (ja) * | 2006-02-21 | 2007-09-06 | Toshiba Corp | マルチチップパッケージ |
TW200839242A (en) * | 2007-02-02 | 2008-10-01 | Alps Electric Co Ltd | Electrostatic capacitance type acceleration sensor |
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