JPWO2008018137A1 - Optical device and method for manufacturing optical device - Google Patents

Abstract

In an optical device having a self-light-emitting element in which an organic light-emitting functional layer including a light-emitting layer is sandwiched between a pair of electrodes, light emission failure due to intrusion of a deterioration factor is reduced in a region where the upper electrode and the organic light-emitting functional layer overlap. That etc. In the optical device 1, a single light emitting element (organic EL element) 100 in which an organic light emitting functional layer 5 including a light emitting layer 52 is sandwiched between a lower electrode 3 and an upper electrode 6 is used as one pixel 11, A plurality of layers are formed on the substrate 2 directly or via other layers, and insulation between the organic material layer 7 formed on the upper electrode 6 and the lower electrode 3 and the upper electrode 6 is ensured. It has the inorganic layer 8 formed on the organic material layer 7, and the sealing part 9 which seals the self-light-emitting element formed on the substrate with a sealing material, and the organic material layer 7 and the inorganic layer 8 overlap. The end of the region (interface 78) is separated from the end of the region (interface 56) where the organic light emitting functional layer 5 and the upper electrode 6 overlap with the outer end side of the sealing portion 9 via the organic material layer 7. Is formed.

Description

  The present invention relates to an optical device and a method for manufacturing the optical device.

  Optical devices are, for example, cell phones, in-vehicle monitors, home appliance monitors, personal computer display devices and information display devices that perform dot matrix display such as television receivers, fixed displays such as watches and advertising panels It is used in various devices such as light sources for devices, scanners and printers, lighting devices such as lighting and liquid crystal backlights, and optical communication devices using photoelectric conversion functions. This optical device is generally formed by a plurality of pixels, and displays desired information by performing display driving or non-display driving for each pixel. A pixel that employs a self-luminous element is known as a pixel forming the optical device. The self-light-emitting element has the advantage of low power and no need for a backlight. A light panel in which a plurality of self-light-emitting elements are arranged in a dot matrix form, a display part in which an icon part (fixed display part) is formed, It is also used for optical devices such as flat and spherical lighting fixtures, and various types of optical devices are known, from small to large screens.

As typical self-luminous elements, inorganic EL elements, organic EL (electroluminescence) elements, FED (Field Emission Display) elements, light emitting diodes, and the like are known. The organic EL element is also called, for example, an organic EL (OEL) device, an organic light emitting diode (OLED) device, a self-light emitting element, or an electroluminescent light source. In general, an organic EL element has a structure in which an organic layer (light emitting layer) is sandwiched between an anode (corresponding to an anode and a hole injection electrode) and a cathode (corresponding to a cathode and an electron injection layer) ( For example, see Patent Document 1). In general, the organic layer has a structure in which a plurality of functional layers are stacked, for example, a structure in which a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, an electron injection layer, and the like are sequentially stacked. Have. Each layer is composed of a single layer made of a single organic material, a mixed layer in which a plurality of materials are mixed, a functional material of an organic material or an inorganic material in a polymer binder (charge transport function, light emitting function, charge blocking function, A layer in which an optical function or the like is dispersed can be employed. Also known are layers that have a buffer function so that the organic layer is not damaged when the upper electrode is formed on each layer by sputtering, and organic EL elements that have a flattening function to prevent unevenness due to the film formation process. It has been.
In the organic EL device having the above configuration, by applying a voltage to both electrodes, holes injected and transported from the anode into the organic layer and electrons injected and transported from the cathode into the organic layer are within the organic layer. The electronic state of the organic molecules in the organic layer changes from the ground state to the excited state, and light is emitted when the excited state changes to the ground state.

FIG. 1 is a cross-sectional view showing an optical device including a general organic EL (electroluminescence) element. FIG. 2 is a front view for explaining deterioration of the organic EL element of the optical device.
As shown in FIG. 1, a general optical device 1 </ b> J uses an organic EL element as one pixel 11. The optical device 1J shown in FIG. 1 is a bottom emission type, and a first electrode (also referred to as a lower electrode) 3J made of a transparent conductive material such as ITO (Indium Tin Oxide) is formed on a glass substrate 2J. An organic light emitting functional layer (which may be plural or singular) 5J is formed and patterned, and a second electrode (also called an upper electrode) 6J such as Al is formed thereon. -Patterned. A lead wire 3a is formed at the end of the first electrode 3J. The organic EL element 100 is produced on the board | substrate 2J by the said manufacturing process. As the substrate 2J, for example, an active drive substrate using TFT (Thin Film Transistor) or the like, or a passive drive substrate formed with stripe-shaped electrodes can be employed.

  In the optical device 1J shown in FIG. 1, the organic EL element 100 is sealed and bonded by a sealing substrate 91J such as glass. Various methods such as hermetic sealing, film sealing, and solid sealing are known as sealing and joining methods for the optical device 1J. For example, in the case of solid sealing, as shown in FIG. 1, sealing is performed between an element-side substrate 2J and a sealing substrate 91 via an adhesive 92J such as an epoxy resin. At this time, the adhesive 92J is applied over the entire surface on which the organic EL element is formed and sealed.

Japanese Patent Laid-Open No. 2005-63928

  However, when sealing is performed using an adhesive 92J such as a thermosetting resin or UV (Ultraviolet) curable resin at the time of sealing, uncured components, solvents, and additives present in the resin during or after curing. Alternatively, deterioration factors (h1) such as moisture, oxygen and other gases from the external atmosphere may enter the organic EL element 100. For example, as shown in FIGS. 1 and 2, the deterioration factor (h1) is considered to enter the interface 56J from the end portion (56Ja) of the interface 56J between the organic light emitting functional layer 5J and the upper electrode 6J. Such an intrusion phenomenon of the deterioration factor (h1) deteriorates the organic EL element 100 in the manufacturing process of the optical device 1J using the organic EL element 100 as one pixel. Further, when a predetermined time elapses, such as when the optical device 1J is driven across users (markets, etc.), the deterioration factor (h1) enters the interface 56J between the layers, for example as shown in FIGS. In addition, there is a problem in that a non-light-emitting portion is generated in the peripheral portion of the pixel 11, the width (w) of the non-light-emitting portion is gradually increased, and the light-emitting defective portion of the optical device 1J is enlarged.

  This invention makes it an example of a subject to cope with such a problem. That is, in an optical device having a self-luminous element in which an organic light emitting functional layer including a light emitting layer is sandwiched between a lower electrode and an upper electrode, water, oxygen, organic gas, etc. are present at the interface between the upper electrode and the organic light emitting functional layer. It is an object of the present invention to reduce light emitting defects caused by the intrusion of deterioration factors, to reduce display defects of optical devices due to light emitting defects of self-luminous elements such as organic EL elements.

An object of the present invention is to solve the above-described problems.
According to the first aspect of the present invention, a single light-emitting element in which an organic light-emitting functional layer including a light-emitting layer is sandwiched between a lower electrode and an upper electrode is used as one pixel, and one or a plurality of the pixels are directly formed on a substrate. Or an optical device formed through another layer in a state in which insulation between the organic material layer formed on the upper electrode of the self-luminous element and the lower electrode and the upper electrode is ensured. A region having an inorganic layer formed on the organic material layer and a sealing portion for sealing the self-luminous element formed on the substrate with a sealing material, and the organic material layer and the inorganic layer overlap with each other The end of the organic light emitting functional layer and the upper electrode are formed on the outer end side of the sealing portion apart from the end of the region where the organic light emitting functional layer overlaps with the upper electrode, with the organic material layer interposed therebetween. To do.

  The invention according to claim 12 is an optical device using an organic EL element having at least a light emitting layer sandwiched between a pair of electrodes as one pixel, and is formed directly or indirectly on the substrate and the substrate. An organic light emitting function including a lower electrode, a first insulating film patterned on the substrate and / or the lower electrode to form a pixel region, and a light emitting layer formed in the pixel region by the first insulating film A layer, an upper electrode formed on the organic light emitting functional layer, an organic material layer formed of at least one material constituting the organic light emitting functional layer in a range wider than a film formation region of the upper electrode, and the organic On the material layer, an inorganic layer formed of the same material as that of the upper electrode in a range narrower than the film formation region of the organic material layer, and a sealing film of the organic EL element covering at least the entire surface of the inorganic layer Specially To.

  According to a thirteenth aspect of the present invention, there is provided an optical device in which one or more of the pixels are formed with a self-luminous element in which an organic light emitting functional layer including at least a light emitting layer is sandwiched between a pair of electrodes as one pixel. A manufacturing method, wherein a lower electrode is formed on a substrate directly or via another layer, and an organic light emitting functional layer that forms the organic light emitting functional layer including the light emitting layer on the lower electrode Forming step, upper electrode forming step of forming an upper electrode on the organic light emitting functional layer, organic material layer forming step of forming an organic material layer on the upper electrode, and the lower electrode on the organic material layer And an inorganic layer forming step of forming an inorganic layer in a state where insulation from the upper electrode is ensured, and a sealing portion is formed by sealing the self-luminous element formed on the substrate with a sealing material. A sealing step, and the organic material In the layer forming step and the inorganic layer forming step, the end of the region where the organic material layer and the inorganic layer overlap is arranged outside the end of the sealing portion from the end of the region where the organic light emitting functional layer and the upper electrode overlap. It is characterized in that it is formed on the part side so as to be separated through the organic material layer.

  According to a sixteenth aspect of the present invention, there is provided an optical device in which one or more of the pixels are formed with a self-luminous element in which an organic light emitting functional layer including at least a light emitting layer is sandwiched between a pair of electrodes as one pixel. In the manufacturing method, a lower electrode is formed on the substrate directly or via another layer, and a pixel region is formed on the substrate and / or the lower electrode by patterning a first insulating film. A pixel region forming step, an organic light emitting functional layer forming step of forming an organic light emitting functional layer functioning as a pixel by light emission and / or non-light emission on the lower electrode by vacuum deposition, and the organic light emitting functional layer on the organic light emitting functional layer An upper electrode forming step of forming an upper electrode by vacuum deposition so that a part of the region where the light emitting functional layer is formed is exposed; and the organic light emitting functional layer in the region where the organic light emitting functional layer is exposed An organic material layer forming step of forming an organic material layer including at least one constituent material by vacuum deposition, and an inorganic layer forming step of forming an inorganic layer by vacuum deposition on the upper surface of the organic material layer and in the range on the exposed region And a sealing step of sealing the self-luminous element formed on the substrate with a sealing material.

It is sectional drawing which shows an optical device provided with a general organic EL (electroluminescence) element. It is a front view for demonstrating deterioration of the organic EL element of an optical device. It is sectional drawing for demonstrating the optical device 1 which concerns on 1st Embodiment of this invention. It is a figure which shows one specific example of the time change of the width | variety of the non-light-emission part produced in the edge part of a pixel for demonstrating the effect of the optical device which concerns on this invention. It is a figure for demonstrating the effect of the optical device which concerns on 1st Example of this invention. It is a figure for demonstrating the effect of the optical device which concerns on 2nd Example of this invention. It is sectional drawing for demonstrating the optical device which concerns on 2nd Embodiment of this invention. It is a figure for demonstrating the optical device 1 which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is a figure for demonstrating the lower electrode formation process of the manufacturing method of the optical device which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is a figure for demonstrating the pixel region formation process (1st insulating film formation process) of the manufacturing method of the optical device 1 which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is a figure for demonstrating the 1st charge transport layer formation process of the manufacturing method of the optical device which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is a figure for demonstrating the light emitting layer formation process of the manufacturing method of the optical device which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is a figure for demonstrating the 2nd charge transport layer formation process of the manufacturing method of the optical device which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is a figure for demonstrating the upper electrode formation process of the manufacturing method of the optical device which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is a figure for demonstrating the organic material layer formation process of the manufacturing method of the optical device which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is a figure for demonstrating the inorganic layer formation process of the manufacturing method of the optical device which concerns on 3rd Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A). It is sectional drawing for demonstrating the optical device 1B which concerns on 4th Embodiment of this invention. It is a figure for demonstrating 1C of optical devices which concern on 5th Embodiment of this invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A).

  An optical device according to an embodiment of the present invention includes a self-luminous element in which an organic light-emitting functional layer including a light-emitting layer is sandwiched between a lower electrode and an upper electrode as one pixel. An optical device formed directly on or through another layer, wherein the organic material layer formed on the upper electrode of the self-luminous element is insulated from the lower electrode and the upper electrode in an organic state. An inorganic layer formed on the material layer and a sealing portion that seals the self-luminous element formed on the substrate with a sealing material, and an end portion of the region where the organic material layer and the inorganic layer overlap with each other, The organic light emitting functional layer and the upper electrode are formed on the outer side of the pixel from the end of the region where the upper electrode overlaps, in detail, on the outer end side of the sealing portion, with the organic material layer interposed therebetween. And

  Preferably, in the interface region (overlapping region) between the organic material layer and the inorganic layer, a capturing part that captures a deterioration factor and reduces deterioration of the organic light emitting functional layer due to the deterioration factor is formed. To do. Preferably, the organic material layer includes at least one organic material constituting the organic light emitting functional layer. Preferably, the inorganic layer is made of the same material as the upper electrode.

  In the optical device having the above configuration, the organic material layer is formed on the self-luminous element in which the organic light emitting functional layer is sandwiched between the lower electrode and the upper electrode, and the inorganic layer is formed on the organic material layer. For example, it is possible to reduce deterioration factors such as an uncured component of the adhesive, a solvent, and water and oxygen from the outside atmosphere from entering the interface between the upper electrode and the organic light emitting functional layer.

  In the optical device having the above configuration, the deterioration factor enters the interface between the upper electrode and the organic light emitting functional layer by preferentially capturing the deterioration factor from the end of the interface between the organic material layer and the inorganic layer to the interface. The amount can be reduced.

  In addition, since the optical device has a structure in which, for example, the end portion of the interface between the organic light emitting functional layer and the upper electrode is in contact with the organic material layer, the degradation factor enters the interface between the organic light emitting functional layer and the upper electrode. Can be reduced. In addition, since the optical device has a structure in which, for example, the end portion of the interface between the organic light emitting functional layer and the upper electrode is in contact with the first insulating film, the deterioration factor may enter the interface between the organic light emitting functional layer and the upper electrode. Can be reduced.

  Further, since the organic material layer includes at least one organic material constituting the organic light emitting functional layer, for example, the organic material prepared at the time of forming the organic light emitting layer is used without preparing a new organic material at the time of forming the organic material layer. Thus, an organic material layer can be easily formed. In addition, when the optical device has a structure in which the end portion of the interface between the organic light emitting functional layer and the upper electrode is covered with the organic material layer, the organic material layer and the organic light emitting function can be obtained by using the organic material layer having the above structure. Since the bonding force between the layers is relatively large, the penetration of degradation factors can be further reduced.

  Moreover, in the optical device having the above-described structure, since the inorganic layer having a relatively high thermal conductivity is provided on the self-luminous element, there is an effect of radiating heat generated when the optical device performs display driving.

  For example, even when the upper electrode has a defect such as a pinhole, the organic material layer and the inorganic layer are sequentially formed on the upper electrode. Can be prevented.

In addition, the method for manufacturing an optical device according to an embodiment of the present invention includes a single light-emitting element in which an organic light-emitting functional layer including at least a light-emitting layer is sandwiched between a pair of electrodes, and one or a plurality of pixels. A method of manufacturing individually formed optical devices, wherein a lower electrode is formed on a substrate directly or via another layer, and an organic light emitting functional layer including a light emitting layer is formed on the lower electrode Organic light emitting functional layer forming step, upper electrode forming step of forming an upper electrode on the organic light emitting functional layer, organic material layer forming step of forming an organic material layer on the upper electrode, and lower electrode on the organic material layer And an inorganic layer forming step for forming an inorganic layer in a state in which insulation from the upper electrode is ensured, and a sealing step for forming a sealing portion by sealing the self-light emitting element formed on the substrate with a sealing material The organic material layer forming step and During the layer formation process, the end of the region where the organic material layer and the inorganic layer overlap is separated from the end of the region where the organic light emitting functional layer and the upper electrode overlap from the end of the sealing portion via the organic material layer. It is characterized by forming.
By the method for manufacturing an optical device, the optical device having the above configuration can be easily manufactured.

  Preferably, in the method for manufacturing an optical device according to the present invention, the organic light emitting functional layer, the upper electrode, the organic material layer, and the inorganic layer are formed on the upper electrode by sputtering, for example. Compared with a conventional manufacturing method for forming an inorganic layer, there are effects such as simplification of the manufacturing process and prevention of generation of strain due to film stress by sputtering.

  Also, in the method of manufacturing an optical device according to another embodiment of the present invention, a lower electrode forming step of forming a lower electrode directly on a substrate or via another layer, and light emission and / or non-light emission on the lower electrode An organic light emitting functional layer forming step of forming an organic light emitting functional layer functioning as a pixel by vacuum deposition, and an upper electrode so that a part of the region where the organic light emitting functional layer is formed is exposed on the organic light emitting functional layer Forming an upper electrode by vacuum vapor deposition, forming an organic material layer including at least one material constituting the organic light emitting functional layer in a region where the organic light emitting functional layer is exposed, and forming an organic material layer by vacuum vapor deposition; An inorganic layer forming step of forming an inorganic layer by vacuum deposition on the upper surface of the organic material layer and the exposed region, and a sealing step of sealing the self-luminous element formed on the substrate with a sealing material

  In the method for manufacturing an optical device, an upper electrode forming step of forming an upper electrode by vacuum deposition on the organic light emitting functional layer so that a part of a region where the organic light emitting functional layer is formed is exposed, and an organic light emitting function An organic material layer forming step in which an organic material layer including at least one material constituting the organic light emitting functional layer is formed in a region where the layer is exposed by vacuum deposition; and an inorganic layer is formed on the upper surface of the organic material layer and in a range on the exposed region. And an inorganic layer forming step formed by vacuum deposition, so that the optical device having the above-described configuration according to the present invention can be easily manufactured.

  Hereinafter, an optical device and an optical device manufacturing method according to an embodiment of the present invention will be described with reference to the drawings.

[First Embodiment]
FIG. 3 is a cross-sectional view for explaining the optical device 1 according to the first embodiment of the present invention. The description of the same configuration and operation as the conventional optical device shown in FIG. 1 is omitted.
As shown in FIG. 3, the optical device 1 according to the first embodiment of the present invention has one pixel 11 or a plurality of pixels 11. In the present embodiment, the plurality of pixels 11 are formed on the substrate 2 in a lattice shape. The formation region of the pixel 11 corresponds to an embodiment of the pixel region according to the present invention. In the optical device 1, the self-light emitting element 100 corresponding to one pixel displays various information by light emission / non-light emission of the light emitting layer formed between the electrodes. As the self-luminous element 100, an organic EL (electroluminescence) element can be adopted. As the optical device 1, for example, an active matrix drive type or a passive matrix drive type can be adopted. Hereinafter, an example of a bottom emission type passive matrix driving type organic EL panel employing an optical device according to an embodiment of the present invention will be described in detail.

  As shown in FIG. 3, the optical device 1 according to this embodiment includes a substrate 2, a lower electrode (first electrode) 3, an organic light emitting functional layer 5 including a light emitting layer, an upper electrode (second electrode) 6, and an organic material. It has the layer 7, the inorganic layer 8, and the sealing member 9.

  The substrate 2 corresponds to one embodiment of the substrate according to the present invention, the lower electrode 3 corresponds to one embodiment of the lower electrode according to the present invention, and the organic light emitting functional layer 5 corresponds to the organic light emitting functional layer according to the present invention. This corresponds to one embodiment. The upper electrode 6 corresponds to an embodiment of the upper electrode according to the present invention, and the organic material layer 7 corresponds to an embodiment of the organic material layer according to the present invention. The inorganic layer 8 corresponds to one embodiment of the inorganic layer according to the present invention, and the sealing member 9 corresponds to one embodiment of the sealing portion according to the present invention.

  The substrate 2 is preferably, for example, a flat plate or a film, and the material can be glass or plastic. For example, in the bottom emission type optical device 1, the substrate 2 is formed of a transparent material.

  The lower electrode (first electrode) 3 is made of a conductive material, and is formed on the substrate 2 directly or via another layer (for example, a moisture-impermeable layer). As a material for forming the lower electrode 3, for example, a transparent conductive material such as ITO is employed.

  The organic light emitting functional layer 5 including the light emitting layer is formed on the lower electrode 3 directly or via another layer (for example, a charge transport layer). The organic light emitting functional layer 5 has a laminated structure such as a charge transport layer and a light emitting layer (also referred to as a light emitting layer). The organic light emitting functional layer 5 is formed by, for example, a vacuum deposition method. Alternatively, it may be formed by a coating, printing method or laser transfer method.

  The upper electrode (second electrode) 6 is made of a conductive material and is formed on the organic light emitting functional layer 5. Specifically, as shown in FIG. 3, the upper electrode 6 is formed in a narrow range on the organic light emitting functional layer 5 so that the end 6 a is located inside the end 5 of the organic light emitting functional layer 5. Yes. Specifically, as shown in FIG. 3, the upper electrode 6 is formed by vacuum deposition of the second electrode so that a part of the region where the organic light emitting functional layer 5 is formed is exposed.

The self-luminous element 100 is formed by the lower electrode 3, the organic light emitting functional layer 5, and the upper electrode 6. Since the self-light-emitting element 100 is significantly deteriorated due to a deterioration factor such as moisture, the self-light-emitting element 100 is sealed by the sealing member 9 to prevent deterioration of the element. Further, in the optical device 1 according to the present embodiment, the organic material layer 7 and the inorganic layer 8 are formed on the upper electrode 6, and a sealing material 92 such as an adhesive is applied on the organic material layer 7 and the inorganic layer 8. The self-luminous element 100 is sealed.
For example, as shown in FIG. 3, in one pixel 11, the light emitting layer of the organic light emitting functional layer 5 is substantially effective in the region where the organic light emitting functional layer 5 is sandwiched between the lower electrode 3 and the upper electrode 6. It corresponds to the light emitting area.

As shown in FIG. 3, the organic material layer 7 is formed on the upper electrode 6 on the organic EL element 100. Specifically, the organic material layer 7 is formed on the upper electrode 6 in a range wider than the film formation region of the upper electrode 6, and the organic light emitting functional layer 5 and the interface 57 are formed.
The organic material layer 7 preferably includes at least one material constituting the organic light emitting functional layer 5, for example. As the material of the organic material layer 7, various organic materials can be adopted depending on the external environment of the optical device 1, driving conditions, and the like. Specific examples of the organic material layer 7, it is possible to employ an aluminum complex Alq ₃ or copper phthalocyanine (CuPc).

The inorganic layer 8 is formed on the organic material layer in a state where insulation from the lower electrode and the upper electrode is ensured. In addition, the inorganic layer 8 is formed by vacuum deposition of a conductive layer containing a conductive material, for example, in the range on the upper surface of the organic material layer 7 and the exposed region.
The inorganic layer 8 is electrically insulated from, for example, an external circuit that drives and controls the organic EL element when a conductive material is formed by vacuum deposition. Various materials can be adopted as the material for forming the inorganic layer 8 depending on the external conditions, driving conditions, and the like of the optical device 1. Specifically, the inorganic layer 8 can employ various metals such as aluminum and conductive materials such as metal oxides. The inorganic layer 8 is preferably formed of the same material as the upper electrode 6.
For example, as shown in FIG. 3, the inorganic layer 8 is formed in a range narrower than the formation region of the organic material layer 7 and in a range wider than the formation region of the upper electrode 6. The inorganic layer 8 is formed by vacuum deposition. As described above, in this embodiment, the organic light emitting functional layer 5, the upper electrode 6, the organic material layer 7, and the inorganic layer 8 are formed by a vacuum deposition method, whereby the manufacturing process can be simplified.

  The sealing member 9 seals the organic EL element 100 formed on the substrate 2 with a sealing material. Various methods such as hermetic sealing, membrane sealing, and solid sealing can be employed as the sealing and joining method of the optical device 1J. In the present embodiment, as shown in FIG. 3, a sealing material 92 such as an adhesive such as an epoxy resin is provided between the element-side substrate 2 and a sealing substrate 91 made of various materials such as glass and metal materials. Sealing. At this time, the adhesive is applied and sealed over the entire surface on which the organic EL element is formed. Moreover, the sealing substrate 91 which makes a recessed part in the position corresponding to an organic EL element is bonded and sealed with the board | substrate 2 through an adhesive agent. At this time, a drying member may be formed in the recess, or film sealing using the sealing material 92 as a sealing film may be performed. That is, the sealing material 92 corresponds to an embodiment of the sealing portion according to the present invention.

Further, in the optical device 1, the end portion 8 a of a region 78 (an interface between the organic material layer 7 and the inorganic layer 8) where the organic material layer 7 and the inorganic layer 8 overlap is a region where the organic light emitting functional layer 5 and the upper electrode 6 overlap. (The interface between the organic light emitting functional layer 5 and the upper electrode 6) 56 is formed on the outer end 901 a side of the sealing portion 9 from the end 6 a so as to be separated via the organic material layer 7.
Further, the end portion 6 a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is covered with the organic material layer 7.
In addition, in the vicinity of the end portion of the interface 78 between the organic material layer 7 and the inorganic layer 8, a capturing portion that captures a deterioration factor and reduces deterioration of the organic light emitting functional layer 5 due to the deterioration factor is formed. In detail, this trapping part utilizes the characteristic that deterioration factors easily enter the interface between the organic material layer 7 and the inorganic layer 8, for example.

  The self-light-emitting element 100 of the optical device 1 having the above-described configuration is such that electrons are injected from the cathode side formed on one of the lower electrode 3 and the upper electrode 6 by applying a voltage between the lower electrode 3 and the upper electrode 6. Holes are injected from the anode side formed on the other of the lower electrode 3 and the upper electrode 6, and they are recombined in the light emitting layer 52, and this recombination changes the electronic state of the organic molecules in the light emitting layer 52 to the ground state. From the excited state to the ground state, and emits light.

  In the optical device 1 having the above-described configuration, the organic material layer 7 is formed on the self-light emitting element 100 in which the organic light emitting functional layer 5 is sandwiched between the lower electrode 3 and the upper electrode 6, and the organic material layer 7 is formed on the organic material layer 7. Since the inorganic layer 8 is formed, for example, an uncured component of the sealing member 92, a solvent, deterioration factors such as water and oxygen from the outside atmosphere enter the interface 56 between the upper electrode 6 and the organic light emitting functional layer 5. Can be reduced.

  Moreover, in the optical device 1 having the above-described configuration, a deterioration factor can be captured at the interface 78 between the organic material layer 7 and the inorganic layer 8, and deterioration of the organic light emitting functional layer 5 due to the deterioration factor can be reduced. Further, the amount of deterioration factors entering the interface 56 between the upper electrode 6 and the organic light emitting functional layer 5 can be reduced. That is, the light emission failure of the optical device 1 can be reduced.

  Further, in the optical device 1, the end portion 6a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is formed in a structure covered with, for example, an organic material layer 7 having a predetermined thickness. It is possible to reduce deterioration factors from entering the interface 56 between the functional layer 5 and the upper electrode 6.

  Moreover, in the optical device 1 having the above configuration, the inorganic layer 8 having a relatively high thermal conductivity is provided on the self-light-emitting element 100 via the organic material layer 7, so that heat generated when the optical device 1 is driven to emit light is provided. There is an effect to dissipate heat.

  For example, even when the upper electrode 6 has a defect such as a pinhole, the organic material layer 7 and the inorganic layer 8 are sequentially formed on the upper electrode 6. Spot expansion can be prevented.

  FIG. 4 is a diagram showing a specific example of the temporal change in the width of the non-light-emitting portion generated at the end portion of the pixel for explaining the effect of the optical device according to the present invention. For example, as shown in FIG. 2, the vertical axis indicates the width (w) of the non-light-emitting portion generated at the end of the pixel 11, and the horizontal axis indicates the storage time (t) in a high temperature and high humidity environment.

  For example, in the optical device 1J having the general structure shown in FIG. 1, the progress of the non-light emitting portion is not observed before a predetermined time (t1) as shown in the graph J1 shown in FIG. In t1), an increase in the non-light emitting portion is observed at a constant speed (evaluated by the width (w) of the non-light emitting portion). For example, as shown in FIG. 1, the deterioration factor that has entered the adhesive 92J from the outer end portion 901a of the sealing portion 9 takes a predetermined time (t1) over the organic light emitting functional layer 5J and the upper electrode 6J. It is thought that it reached the interface 56J and further invaded.

On the other hand, in the optical device 1 according to the present invention shown in FIG. 3, for example, as shown in the graph P1 shown in FIG. 4, the progress of the non-light emitting portion is not observed before the predetermined time (t1), and the predetermined time (t1) ) The progress of the non-light emitting part is not observed after (within the observation time). For example, as shown in FIG. 3, this is considered to be an effect obtained by capturing a deterioration factor at the interface 78 between the organic material layer 7 and the inorganic layer 8 of the optical device 1 according to the present invention.
As shown in FIG. 3, in the optical device 1 according to the present invention, the end 6a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is covered with an organic material layer 7 having a predetermined thickness. Since the material layer 7 has a structure formed on the organic light emitting functional layer 5, there is an effect of further reducing the penetration of the deterioration factor into the organic EL element 100.

[First embodiment]
Next, an optical device according to a first embodiment of the present invention will be described.
On the glass substrate 2, an anode made of ITO is formed as the lower electrode 3, and an organic light emitting functional layer 5 made of a hole injection layer, a hole transport layer, a light emitting layer, and an electron injection layer is formed thereon, An organic EL element 100 having a cathode made of Al as the upper electrode 7 is formed thereon.
On a glass substrate 2 on which an anode made of ITO (indium tin oxide) having a thickness of 110 nm is formed, a film formation layer is formed by a vacuum evaporation method in each film formation chamber having a degree of vacuum of 5.0 × 10 ⁻⁴ Pa. A film was formed. At this time, first, CuPc (copper phthalocyanine) is formed on ITO as a hole injection layer with a film thickness of 25 nm, and then NPD (N, N′-diphenyl) is formed as a hole transport layer on the hole injection layer. -N, N'-bis (1-naphthyl) -1,1'-biphenyl-4,4'-diamine) was formed to a thickness of 45 nm. An Alq ₃ film having a thickness of 60 nm was formed as a light emitting layer and an electron transport layer on the hole transport layer. Next, LiF (lithium fluoride) was formed to a thickness of 0.5 nm as an electron injection layer on the light emitting layer. Then, an Al (aluminum) film having a thickness of 100 nm was formed on the electron injection layer as the upper electrode 6.
Next, 60 nm of Alq ₃ having the same material as the electron transport layer, which is one of the organic light emitting functions, was formed on the upper electrode 6 as the organic material layer 7. The organic material layer 7 is formed by vacuum deposition, and is formed so as to cover the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6.
After that, an Al layer having a thickness of 100 nm was formed as the inorganic layer 8 on the organic material layer 7. The inorganic layer 8 is formed by vacuum deposition, and the end portion 8a of the interface 78 between the organic material layer 7 and the inorganic layer 8 is more outside the sealing portion than the end portion 6a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6. A film is formed so as to be formed on the end portion 901a side. The produced organic EL element was sealed with an epoxy resin as a sealing material 92, and the glass sealing substrate 91 and the substrate 2 were sealed so as not to form a space, thereby completing the optical device according to the first example.

[Second Embodiment]
Next, an optical device according to the second example was manufactured. The description of the same configuration as that of the optical device according to the first embodiment is omitted. In the second example, the organic material layer 7 was manufactured in the same manner as the optical device manufactured in the above-described Example 1 except that 60 nm of CuPc, which is the same material as the hole injection layer that is one of the organic light emitting functions, was formed. .

[Comparative example]
Next, in order to confirm the effect of the optical device according to the present invention, the element was sealed without forming the organic material layer 7 and the inorganic layer 8, and an optical device according to a comparative example was produced. Since other configurations are the same as those of the first and second embodiments, the description thereof is omitted.

  5 and 6 are diagrams for explaining the effects of the optical device according to the embodiment of the present invention. Specifically, FIG. 5 shows the optical device according to the first embodiment of the present invention and the optical device according to the comparative example stored in a high temperature and high humidity environment at a temperature of 60 ° C. and a humidity of 90%, as shown in FIG. FIG. 6 is a diagram showing the width (w) (vertical unit μm) of a non-light-emitting portion generated at the end of the pixel 11 with respect to the elapsed time t (horizontal unit time (h)). FIG. 6 is a result of conducting a similar experiment by storing the optical device according to the second embodiment of the present invention and the optical device according to the comparative example in a high-temperature and high-humidity environment at a temperature of 60 ° C. and a humidity of 90%. FIG.

  In the optical device according to the comparative example, as shown in the graph J2 of FIGS. 5 and 6, the progress of the non-light emitting portion is not observed about 240 hours ago, but the light is not emitted at a constant rate after about 240 hours have elapsed. An increase in the portion was observed (evaluated by the width (w) of the non-light-emitting portion).

  On the other hand, in the optical device according to the first example, as shown in the graph P11 of FIG. 5, the progress of the non-light emitting portion is not observed about 240 hours ago, and further, no light is emitted even after about 240 hours have elapsed. Partial progress was not observed (within observation time).

  Further, in the optical device according to the second example, as shown in the graph P12 of FIG. 6, the progress of the non-light-emitting portion is not observed about 240 hours ago, and further, no light is emitted even after about 240 hours have elapsed. Partial progress was not observed (within observation time).

[Second Embodiment]
FIG. 7 is a cross-sectional view for explaining an optical device according to the second embodiment of the present invention. A description of the same configurations and functions as those in the above embodiment will be omitted.
In the optical device 1S according to the present embodiment, as shown in FIG. 7, a lower electrode 3 is patterned on an upper portion of a substrate 2, and a pixel (region) 11 is formed on the upper portion by a first insulating film 4 such as SiO ₂ or polyimide. Is formed. One or a plurality of the pixels 11 are formed, and display / non-display of the pixels 11 is selected by applying a voltage to the lower electrode 3 and the upper electrode 6 to cause a current to flow in the organic light emitting functional layer 5. The optical device displays desired information by displaying / not displaying the pixels 11.
An organic light emitting functional layer 5 and an upper electrode 6 are formed on the pixel 11 and the first insulating film 4. For example, as shown in FIG. 2, the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is formed on the first insulating film 4 formed at the end of the pixel 11 closest to the outer end 901a.
And the 2nd insulating film 41 is formed so that a self-light-emitting element may be covered. Further, a second insulating film 41 is formed on the upper electrode 6 so as to cover the interface 56. Preferably, the second insulating film 41 is formed so as to cover the entire region where the first insulating film 4 is formed. The second insulating film 41 is formed by vacuum deposition of a metal oxide such as MoO ₃ (molybdenum oxide) or SnO ₂ (tin oxide).
Next, the organic material layer 7 is formed in a range covering the interface 56 on the second insulating film 41, and the inorganic layer 8 is formed thereon. It forms so that the edge part of the interface 78 of the organic material layer 7 and the inorganic layer 8 may be formed in the outer edge part 901a side of the sealing part 9 rather than the edge part of the interface 56 under the 2nd insulating film 41.

  In the optical device having the above configuration, the pixel region 11 is formed by the patterned first insulating film 4, the self-luminous element 100 is formed in the pixel region 11, and the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6. Is formed on the first insulating film 4 and covered with the second insulating film 41, so that the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is further compared with the first embodiment. It is possible to reduce the intrusion of the degradation factor into the.

[Third Embodiment]
FIG. 8 is a diagram for explaining an optical device 1 according to the third embodiment of the present invention. 8A is a top view, and FIG. 8B is a cross-sectional view in the vicinity of the region A shown in FIG. 8A. A description of the same configurations and functions as those in the first embodiment will be omitted. In the optical device 1 according to this embodiment, a plurality of self-luminous elements (organic EL elements) 100 are formed on the substrate 2 in a substantially lattice shape. The optical device 1 has at least one pixel 11, in the present embodiment, a plurality of pixels 11 in a matrix form, and the organic EL element 100 forming this pixel is interposed between the lower electrode 3 and the upper electrode 6. The organic light emitting functional layer 5 including the light emitting layer 52 is sandwiched. As shown in FIGS. 8A and 8B, the optical device 1 according to this embodiment emits light from each self-luminous element by an input signal from an external circuit such as a power supply circuit or a controller IC (Integrated circuit). / Non-light emission is controlled. The optical device 1 displays various information by light emission / non-light emission of each self-light emitting element. Hereinafter, an organic EL panel using an organic EL element which is a self-luminous element will be described as the optical device 1.

As shown in FIGS. 8A and 8B, the optical device 1 includes a substrate 2, a lower electrode (first electrode) 3, a first insulating film 4, a light emitting functional layer 5, and an upper electrode (second electrode). 6, the organic material layer 7, the inorganic layer 8, and the sealing member 9. The organic light emitting functional layer 5 includes a first charge transport layer 51, a light emitting layer 52, and a second charge transport layer 53.
Specifically, in the optical device 1 shown in FIGS. 8A and 8B, a transparent electrode such as ITO is formed as a lower electrode 3 on a substrate 2 such as glass so that one pixel 11 is formed. In addition, an opening of the first insulating film 4 such as SiO ₂ or polyimide is formed and patterned. A first charge transport layer is formed of a hole transport layer such as NPD on the surface of the lower electrode 3 in the opening. The first charge transport layer 51 is formed in the opening and the upper part of the first insulating film 4 forming the opening and the upper part of the first insulating film 4 formed on the outermost part. A light emitting layer 52 is formed on the first charge transport layer 51. The light emitting material of the light emitting layer 52 may be appropriately selected according to the design items of the optical device, such as single color display, full color display, dot matrix, icon display, and segment display. For example, red light emitting materials such as styryl dyes such as DCM1 (4- (dicyanomethylene) -2-methyl-6- (4′-dimethylaminostyryl) -4H-pyran), and blue such as distyryl derivatives and triazole derivatives A phosphorescent material using Ir (iridium) complex or the like may be employed. A second charge transport layer 53 is formed on the light emitting layer 52. The second charge transport layer 53 has an electron transport layer made of various materials such as an aluminum complex (Alq ₃ ). Similar to the first charge transport layer 51, the light emitting layer 52 and the second charge transport layer 53 are formed up to the top of the first insulating film 4 forming the opening and the top of the first insulating film 4 formed on the outermost part.

The upper electrode 6 is formed on the organic light emitting functional layer 5 including the first charge transport layer 51, the light emitting layer 52, and the second charge transport layer 53. As a material for forming the upper electrode 6, for example, various metal materials such as Al can be employed. The upper electrode 6 is formed up to the upper part of the first insulating film 4 forming the opening and the upper part of the first insulating film 4 formed on the outermost part. As shown in FIG. Preferably, the light emitting functional layer 5 is formed in a film forming range narrower than the film forming range.
On the upper electrode 6, the organic material layer 7 is formed in a range wider than the film formation range of the upper electrode 6. For example, the organic material layer 7 is preferably selected from the same materials among the organic materials constituting the organic light emitting functional layer 5. Specifically, when the organic material layer 7 is formed, for example, Alq ₃ which is a material for forming the second charge transport layer 53 is formed and patterned on the upper electrode 6 made of aluminum (Al). At this time, as shown in FIG. 8B, the organic material layer 7 is formed in a wider range than the upper electrode 6. Specifically, as shown in FIG. 8B, the organic light emitting functional layer 5 and the organic material layer 7 are formed so as to overlap each other outside the pixel from the end 6 a of the upper electrode 6. In the optical device 1 according to this embodiment, by eliminating the interface between the organic light emitting functional layer 5 and the organic material layer 7, the deterioration factor of the organic EL element 100 causes the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6. It is possible to reduce intrusion into the interface and reduce the light emission failure of the organic EL element 100 caused by the intrusion.

  Further, as shown in FIG. 8B, an inorganic layer 8 is formed with a conductive material on the organic material layer 7. The inorganic layer 8 is electrically insulated from the lower electrode 3 and the upper electrode 6 of the organic EL element 100 and further has an external circuit 85 (851, 851 for driving the organic EL element 100 of the optical device 1. 852), the first electrode side flexible substrate 801 (80), and the second electrode side flexible substrate 802 (80), electrical insulation is ensured. That is, the organic material layer 7 and the inorganic layer 8 are not involved in light emission / non-light emission of the organic EL element 100.

As shown in FIG. 8B, a sealing substrate 91 is bonded to the upper portion of the inorganic layer 8 by a sealing material (adhesive) 92. As the sealing material 92, for example, an organic resin such as a thermosetting resin or a photo-curing resin can be employed. The sealing substrate 91 is preferably made of, for example, a flat glass material, a metal substrate, a plastic material, or the like and has a function of barriering moisture. Although not shown in FIGS. 8A and 8B, the outer peripheral portions of the sealing substrate 91 and the substrate 2 may be sealed with a sealing material or the like.
Further, as shown in FIG. 8B, the end portion of the region 78 where the organic material layer 7 and the inorganic layer 8 overlap (interface between the organic material layer 7 and the inorganic layer 8) 78 is the organic light emitting functional layer 5 and the upper electrode 6. Is formed on the outer end portion 901a side of the sealing portion 9 from the end portion 6a of the region (interface between the organic light emitting functional layer 5 and the upper electrode 6) 56, with the organic material layer 7 therebetween.

  An example of a method for manufacturing the optical device 1 will be described. The manufacturing method of the optical device 1 according to the present embodiment includes, for example, a lower electrode forming step, a first insulating film forming step, an organic light emitting functional layer forming step (first transport layer forming step, light emitting layer forming step, second transport layer). Forming step), upper electrode forming step, organic material layer forming step, inorganic layer forming step, sealing step, and post-processing step. Hereinafter, the method for manufacturing the optical device 1 according to the present embodiment will be described in detail with reference to FIGS.

[Lower electrode (first electrode) formation step]
FIG. 9 is a view for explaining a lower electrode forming step of the method for manufacturing an optical device according to an embodiment of the present invention. FIG. 9A is a top view, and FIG. 9B is a cross-sectional view around the region A shown in FIG. 9A.
First, a substantially constant film is formed on the entire surface by various film forming methods such as a sputtering film forming method using a transparent electrode such as ITO or IZO (Indium Zinc Oxide) as a lower electrode (first electrode) 3 on a substrate 2 such as glass. Thick film is formed. In this example, the lower electrode 3 is described as a hole injection electrode, but conversely, it may be formed as an electron injection electrode. Thereafter, a lower electrode 3 that is a part of the organic EL element, a lower electrode lead wire 3a for inputting a light emission / non-light emission control signal of the organic EL element 100 from an external circuit, and an upper electrode (second electrode) lead. The wiring 3b is patterned.
Specifically, as shown in FIGS. 9A and 9B, a plurality of lower electrode (first electrode) lines 3A and a plurality of upper electrode lead wires forming the lower electrode 3 and the lower electrode lead wire 3a. 3b is patterned into stripes by photolithography. At this time, in order to smooth the surface of the first electrode, a surface treatment such as polishing or etching may be performed on the conductive material formed on the substrate 2 or the conductive material patterned after the film formation. Good. Alternatively, a low resistance metal such as silver (Ag), aluminum (Al), chromium (Cr), or an alloy thereof may be laminated and patterned on the lower electrode lead wiring 3a or the upper electrode lead wiring 3b. .

[Pixel region forming step (first insulating film forming step)]
FIG. 10 is a diagram for explaining a pixel region forming step (first insulating film forming step) in the method for manufacturing the optical device 1 according to an embodiment of the present invention. 10A is a top view, and FIG. 10B is a cross-sectional view in the vicinity of the region A shown in FIG.
As described above, one organic EL element 100 is used as one pixel 11 in order for one organic EL display to display information. An organic EL display having a plurality of pixels 11 is shown, and a light emitting region of the pixels 11 is formed in the opening of the first insulating film 4. The first insulating film 4 is formed on the entire surface of the substrate 2 on the lower electrode patterning side by using, for example, an organic material polyimide, an inorganic material silicon oxide, or the like.
First, for example, a first insulating film material such as a polyimide precursor, a novolak resin, or silicon oxide is formed on the entire surface of the substrate 2 on the first electrode formation side by a manufacturing method such as spin coating or sputtering. Thereafter, as shown in FIGS. 10A and 10B, the first insulating film is patterned in a lattice shape. Specifically, the first insulating film 4 is patterned by photolithography so as to form a lattice pattern between the lower electrode lines 3A patterned in a plurality of stripes and in a direction orthogonal to the lower electrode lines 3A. To do. After the patterning, a curing process is performed as necessary. Although FIG. 10B shows that a plurality of first insulating films 4 exist at both ends of the lower electrode 3, the first insulating film 4 according to the present embodiment is shown in FIG. The first insulating film 4 formed by one film formation is patterned into a specified shape. Note that the first insulating film 4 may be formed by performing a plurality of film formation and patterning of an insulating material. It is sufficient that the optical device 1 according to the present invention can be formed. Further, in the pixel region forming step (first insulating film forming step), a mask support is provided to prevent the partition wall having an overhang for patterning the upper electrode 6 and the coating mask from contacting the organic light emitting functional layer 5. A layer may be formed.

[First transport layer forming step]
FIG. 11 is a view for explaining a first charge transport layer forming step of the method of manufacturing an optical device according to one embodiment of the present invention. 11A is a top view, and FIG. 11B is a cross-sectional view in the vicinity of the region A shown in FIG. 11A.

After the pixel region forming step, a pretreatment step is performed on the substrate 2 on which the first electrode, the first insulating film 4 and the like are formed. As the pretreatment process, for example, a cleaning process using a surfactant or pure water, or various cleaning processes such as UV (Ultraviolet) irradiation / ozone cleaning and plasma cleaning can be employed.
Next, after the pretreatment step, the substrate 2 is transferred into a film formation chamber (not shown) set to a vacuum degree of 1 × 10 ⁻⁴ Pa, and the organic material is formed by various manufacturing methods such as resistance heating vapor deposition. Do the membrane. In the resistance heating vapor deposition method, a substrate 2 is installed in a film formation chamber, and a film formation source filled with the film formation material is heated, whereby a film formation material that evaporates or sublimates is formed in an opening defined by the first insulating film 4. A film is formed. In this embodiment, a film forming method using a vacuum vapor deposition method will be described. In addition, a film forming layer is formed by a polymer material coating method, a film forming method using a printing method, a film forming method using a laser thermal transfer method, or the like. Also good.

For example, NPB (N, N-di (naphtalence) -N, N-dipheneyl-benzidene) is formed as the first charge transport layer 51. The first charge transport layer 51 has a function of transporting holes (or electrons) injected from the lower electrode 3 to the light emitting layer 52. The first charge transport layer 51 may be a single layer or a stack of two or more layers. In addition, the first charge transport layer 51 may not be formed of a single material but may be formed of a single layer of a plurality of materials, and a guest having a high charge donating (accepting) property for a host material having a high charge transport capability. Materials may be doped. In addition, the first charge transport layer 51 is formed in the opening, to the top of the first insulating film 4 forming the opening and to the top of the first insulating film 4 formed on the outermost part. A hole injection layer such as copper phthalocyanine (CuPc) may be formed between the first charge transport layer 51 and the lower electrode 3.
Since the lower electrode 3 according to the present embodiment corresponds to a hole injection electrode, the organic light emitting functional layer 5 can use a general material used as a hole transport layer. The organic light emitting functional layer 5 is not limited to the above embodiment, and the material, film thickness, film forming method, and the like are designed according to various conditions such as the situation and environment in which the optical device 1 according to the present invention is used. Also good.

[Light emitting layer forming step]
FIG. 12 is a diagram for explaining a light emitting layer forming step of the method for manufacturing an optical device according to an embodiment of the present invention. 12A is a top view, and FIG. 12B is a cross-sectional view in the vicinity of the region A shown in FIG.
Next, as shown in FIGS. 12A and 12B, a light emitting layer 52 is formed on the first charge transport layer 51. In this example, red (R), green (G), and blue (B) light-emitting layers are formed in respective film formation regions by using a resistance heating vapor deposition method using a coating mask. As the red (R), an organic material that emits red light such as a styryl dye such as DCM1 is used. An organic material that emits green light such as Alq ₃ is used as green (G). As the blue (B), an organic material emitting blue light such as a distyryl derivative or a triazole derivative is used. Of course, other materials or a host-guest layer structure may be used, and the emission form may be a fluorescent material or a phosphorescent material. The light emitting layer 52 is formed in the opening, the upper part of the first insulating film 4 forming the opening and the upper part of the first insulating film 4 formed on the outermost part.

[Second charge transport layer forming step]
FIG. 13 is a diagram for explaining a second charge transport layer forming step of the method of manufacturing an optical device according to one embodiment of the present invention. FIG. 13A is a top view, and FIG. 13B is a cross-sectional view around the region A shown in FIG.
Next, as shown in FIGS. 13A and 13B, various materials such as an aluminum complex (Alq ₃ ) are used as the second charge transport layer 53 to form the light emitting layer by various film forming methods such as resistance heating vapor deposition. A film is formed on 52. The second charge transport layer 53 has a function of transporting electrons injected from the upper electrode 6 to the light emitting layer 52. The second charge transport layer 53 may be a single layer or a multilayer structure in which two or more layers are stacked. In addition, the second charge transport layer 53 may be formed by a plurality of materials instead of being formed by a single material, and has a high charge donating (accepting) property to a host material having a high charge transport capability. The guest material may be doped or formed.
In addition, since the upper electrode 6 according to the present embodiment corresponds to an electron injection electrode, the second charge transport layer 53 can use a general material used as an electron transport layer. The second charge transport layer 53 is not limited to the above embodiment, and the material, film thickness, and film formation method may be designed according to various conditions such as the situation and environment in which the optical device 1 is used. In addition, the second charge transport layer 53 is formed in the opening, to the top of the first insulating film 4 that forms the opening, and to the top of the first insulating film 4 formed on the outermost part.

[Upper electrode (second electrode) formation process]
FIG. 14 is a view for explaining the upper electrode forming step of the method for manufacturing an optical device according to an embodiment of the present invention. FIG. 14A is a top view, and FIG. 14B is a cross-sectional view around the region A shown in FIG.
Next, as shown in FIGS. 14A and 14B, the upper electrode 6 is formed on the second charge transport layer 53. Specifically, the upper electrode 6 is formed on the second charge transport layer 53 by depositing and patterning a material for forming the upper electrode 6 along a direction orthogonal to the upper electrode (first electrode) line 3A. As shown in FIG. 14A, the upper electrode 6 formed in a line shape is called an upper electrode (second electrode) line.
This patterning method may be a patterning method using a film formation mask or a patterning method using partitions provided in a direction parallel to the upper electrode line. The upper electrode line is formed so as to be electrically connected to the upper electrode 6 in which the opening of the first insulating film 4 is formed and the upper electrode lead wiring 3b formed during the lower electrode forming step. The upper electrode 6 is made of a material having a work function lower than that of the hole injection electrode so as to function as an electron injection electrode. The upper electrode 6 according to the present embodiment preferably uses, for example, aluminum (Al) or a magnesium alloy (Mg—Ag). However, since Al has a low electron injection capability, it is preferable to provide an electron injection layer such as LiF between Al and the second charge transport layer 53.
As shown in FIGS. 14A and 14B, the upper electrode 6 is formed in a region narrower than the film formation range of the organic light emitting functional layer 5. At this time, coating is performed using a vapor deposition mask. Specifically, as shown in FIGS. 14A and 14B, the upper electrode 6 is formed such that the end region 501a of the organic light emitting functional layer 5 is exposed.

[Organic material layer formation process]
FIG. 15 is a view for explaining an organic material layer forming step of the method for manufacturing an optical device according to an embodiment of the present invention. 15A is a top view, and FIG. 15B is a cross-sectional view in the vicinity of the region A shown in FIG. 15A.
Next, as shown in FIGS. 15A and 15B, the organic light emitting functional layer 5 including the first charge transport layer 51, the light emitting layer 52, and the second charge transport layer 53 on the upper electrode 6 is formed. The organic material layer 7 is formed and patterned with the same material as any one of the organic layers.
The organic material layer 7 is formed by, for example, the same vacuum deposition from the second charge transport layer 53. For example, as shown in FIGS. 15A and 15B, the organic material layer 7 is formed so as to cover the end region 501 a of the organic light emitting functional layer 5. At this time, the interface 57 between the organic material layer 7 and the organic light emitting functional layer 5 has a relatively high affinity between the layers, so that there is substantially no interface.

[Inorganic layer forming step]
FIG. 16 is a diagram for explaining an inorganic layer forming step of the method for manufacturing an optical device according to an embodiment of the present invention. FIG. 16A is a top view, and FIG. 16B is a cross-sectional view around the region A shown in FIG.
Next, an inorganic layer is formed on the organic material layer 7 from various metal materials such as aluminum (Al). At this time, as shown in FIGS. 16A and 16B, the inorganic layer 8 is formed with a smaller area than the organic material layer 7. The inorganic layer 8 is formed by the same vacuum deposition from the first charge transport layer forming step.

Further, at the time of the organic material layer forming step and the inorganic layer forming step, as shown in FIGS. 16A and 16B, the end portion 8a of the region 78 where the organic material layer 7 and the inorganic layer 8 overlap is made to emit organic light. The functional layer 5 and the upper electrode 6 are formed on the outside of the pixel from the end portion 6 a of the region 56 where the functional layer 5 and the upper electrode 6 overlap with each other through the organic material layer 7.
Further, at the time of the organic material layer forming step, the organic material layer 7 is formed so that the end portion of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 where the organic material layer 7 and the inorganic layer 8 overlap is covered with the organic material layer 7.

[Sealing process, post-processing process]
Next, as shown in FIGS. 8A and 8B, a sealing process using the sealing member 9 is performed after the patterning patterning of the inorganic layer 8 is completed. In this embodiment, the sealing member 9 is formed by a sealing substrate 91 made of various materials such as glass and a sealing material 92 such as an adhesive. Specifically, the sealing material is hermetically filled with an epoxy resin or the like in a sealing space between the substrate 2 and the sealing substrate 91 and solidified. In addition, even if concave processed glass, flat glass, etc. are used as a sealing member and bonded via an adhesive, a solid drying member is disposed in the space even if the space formed is filled with a liquid such as silicone oil. You may do it. In order to reduce the thickness of the organic EL display, the sealing member 9 is formed of a sealing film made of a metal oxide such as silicon nitride, silicon nitride oxide, MoO ₃ (molybdenum oxide), SnO ₂ (tin oxide), or the like. May be. At this time, the sealing film is formed so as to cover the entire surface of the organic material layer and the inorganic layer. The sealing film may be formed by vacuum deposition or by CVD or coating. In addition, the optical device may be sealed only by film sealing using a sealing film, and the optical device is sealed by solid sealing with a sealing substrate and a sealing material on the sealing film. Alternatively, the optical device may be formed by hermetically sealing with a sealing substrate.

  After the sealing step, the lower electrode lead-out wiring 3a formed on the substrate 2 for connecting the organic EL element 100 and the external circuit 85 (851, 852) to the substrate 2 on which the above-described components are formed, and A wiring board such as the flexible board 80 (801, 802) is pressure-bonded to the position of the upper electrode lead-out wiring 3b. In this embodiment, the external circuit 85 is connected to the upper electrode and the lower electrode by the flexible substrate 80. However, COG (Chip on glass) for forming the drive circuit on the substrate and the drive circuit on the flexible substrate 80 are formed. Various mounting techniques such as FOG (Flip Chip on Glass) may be employed. The optical device 1 is completed after performing an inspection process, an aging process, and the like after the external circuit 85 and the pressure bonding are completed.

In the method for manufacturing the optical device 1 according to this embodiment, the first charge transport layer forming step, the light emitting layer forming step, the second charge transport layer forming step, the upper electrode forming step, the organic material layer forming step, and the inorganic layer forming step are performed. The production process can be simplified by performing the vacuum evaporation method.
Further, in the optical device 1 having the above-described configuration, the organic material layer 7 and the inorganic layer 8 are formed on the organic EL element 100, so that deterioration factors enter between the organic light emitting functional layer 5 and the upper electrode 6. Luminous defects can be reduced.
The optical device 1 according to the present invention is a passive matrix drive type, but is not limited to this form. For example, the optical device 1 according to the present invention is applied to an active drive organic EL panel provided with (Thin Film Transistor). Device 1 may be applied.

  As described above, the optical device 1 having the above-described configuration can be easily manufactured by the method for manufacturing the optical device 1.

[Fourth Embodiment]
FIG. 17 is a cross-sectional view for explaining an optical device 1B according to a fourth embodiment of the present invention. The description of the same configuration, function, and the like as in the first embodiment and the second embodiment is omitted.
In the optical device 1B according to the present embodiment, as shown in FIG. 17, insulation between the organic material layer 7 formed on the upper electrode 6 of the self-luminous element 100 and the lower electrode 3 and the upper electrode 6 is ensured. And an inorganic layer 8 formed on the organic material layer 7. Further, the optical device 1B has a structure in which the end 6a of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 is covered with the first insulating film 4, as shown in FIG. In the optical device 1B, the end 6a of the upper electrode 6, the end 7a of the organic material layer 7, and the end 8a of the inorganic layer 8 are formed on the first insulating film 4 formed on the substrate 2 and / or the lower electrode 3. It has a contact structure.
Further, as in the first embodiment and the second embodiment, the optical device 1B includes a region where the organic material layer 7 and the inorganic layer 8 overlap (the interface between the organic material layer 7 and the inorganic layer 8), as shown in FIG. )) The end of 78 is closer to the outer end 901a side of the sealing portion 9 than the end of the region 56 where the organic light emitting functional layer 5 and the upper electrode 6 overlap (interface between the organic light emitting functional layer 5 and the upper electrode 6). Further, the organic material layer 7 is formed so as to be spaced apart.
Further, in the optical device 1B, a capturing part that captures a deterioration factor and reduces deterioration of the organic light emitting functional layer due to the deterioration factor is formed in a region near the end of the interface 78 between the organic material layer 7 and the inorganic layer 8. ing.

  Description of the manufacturing method of the optical device 1B having the above-described configuration will be omitted for points that are substantially the same as those of the first to third embodiments. In the manufacturing method of the optical device 1 </ b> B according to this embodiment, the organic light emitting functional layer 5 or more layers are formed so that the end portions of the layers are in contact with the first insulating film 4.

  In the optical device 1B configured as described above, even if, for example, a deterioration factor enters through the interface between the inorganic layer 8 and the first insulating film 4, the trapping portion formed at the interface between the organic material layer 7 and the inorganic layer 8 Since the deterioration factor is captured, it is possible to further reduce the deterioration factor from entering between the organic light emitting functional layer 5 and the upper electrode 6.

[Fifth Embodiment]
FIG. 18 is a view for explaining an optical device 1C according to the fifth embodiment of the present invention. 18A is a top view, and FIG. 18B is a cross-sectional view in the vicinity of the region A shown in FIG. A description of the same configurations and functions as those in the first to fourth embodiments will be omitted.
The optical device 1C according to the present embodiment is an active matrix drive type, and in detail, as shown in FIGS. 18 (A) and 18 (B), a substrate on which a TFT for controlling the drive of the organic EL element 100 is formed. An organic EL element 100 is formed on 2 (TFT substrate).
More specifically, in the optical device 1C, as shown in FIGS. 18A and 18B, a region where the organic material layer 7 and the inorganic layer 8 overlap (interface between the organic material layer 7 and the inorganic layer 8)) 78. The organic light emitting functional layer 5 and the upper electrode 6 overlap each other from the end of the region 56 (interface between the organic light emitting functional layer 5 and the upper electrode 6) 56 toward the outer end 901a side of the sealing portion 9. The material layer 7 is spaced apart. Further, the TFT is electrically connected to the lower electrode 3. This TFT may be formed adjacent to the lower electrode 3 as shown in FIG. 18B, or a planarization layer (not shown) is formed on the substrate 2 and the planarization layer is formed. It may be formed inside.
As described above, the present invention may be applied to the active matrix drive type optical device 1C.

The present invention is not limited to the embodiment described above. For example, you may implement combining the said embodiment.
Moreover, the said organic light emission functional layer 5 is not restricted to embodiment mentioned above, You may form with various organic materials.

  As described above, the optical device 1 according to the present invention includes a self-emitting element (organic EL element) 100 in which the organic light emitting functional layer 5 including the light emitting layer 52 is sandwiched between the lower electrode 3 and the upper electrode 6. As the pixel 11, one or a plurality of pixels 11 are formed on the substrate 2 directly or via another layer, and an organic material layer 7 formed on the upper electrode 6 of the organic EL element 100, and a lower part In a state in which insulation between the electrode 3 and the upper electrode 6 is ensured, the inorganic layer 8 formed on the organic material layer 7 and the self-emitting element (organic EL element) 100 formed on the substrate are sealed with the sealing material 92. The end portion of the region where the organic material layer 7 and the inorganic layer 8 overlap (interface 78) is the end portion of the region where the organic light emitting functional layer 5 and the upper electrode 6 overlap (interface 56). The organic material layer 7 is interposed between the end portion and the outer end portion (901a) side of the sealing portion 9. Because it is spaced apart, it is possible to reduce the deterioration factors penetrate between the upper electrode 6 and the organic light-emitting functional layer 5. Further, it is possible to reduce the light emission failure caused by the penetration of the deterioration factor.

  In addition, since the end portion of the interface 56 between the organic light emitting functional layer 5 and the upper electrode 6 has a structure covered with the organic material layer 7 or the first insulating film 4, the upper electrode 6 and the organic light emitting functional layer 5 are interposed. It is possible to reduce the intrusion of the deterioration factor.

  In other words, in the vicinity of the end portion of the interface 78 between the organic material layer 7 and the inorganic layer 8, a capturing part that captures the deterioration factor and reduces the deterioration of the organic light emitting functional layer 5 due to the deterioration factor is formed. It is possible to reduce the deterioration factor from entering between the upper electrode 6 and the organic light emitting functional layer 5.

  The organic material layer 7 is formed on the upper electrode 6 in a range wider than the film formation region of the upper electrode 6, and the inorganic layer 8 is formed on the organic material layer 7 in the film formation region of the organic material layer 7. It is formed in a narrower range. Therefore, the organic material layer 7 is formed so as to form the interface 57 on a part of the organic light emitting functional layer 5. Preferably, the organic material layer 7 includes at least one organic material constituting the organic light emitting functional layer, so that the interface 57 between the organic light emitting functional layer 5 and the organic material layer 7 has substantially no interface. Therefore, it is possible to reduce the deterioration factor from entering between the upper electrode 6 and the organic light emitting functional layer 5.

  The first insulating film 4 formed on the substrate 2 and / or the lower electrode 3 has a structure in which the end of the upper electrode 6, the end of the organic material layer 7, and the end of the inorganic layer 8 are in contact with each other. The organic material layer 7 is located outside the end of the region (interface 78) where the organic material layer 7 and the inorganic layer 8 overlap with the end of the region (interface 56) where the organic light emitting functional layer 5 and the upper electrode 6 overlap. Therefore, the deterioration factor can be further prevented from entering between the upper electrode 6 and the organic light emitting functional layer 5.

  Further, by forming the organic light emitting functional layer 5, the upper electrode 6, the organic material layer 7, and the inorganic layer 8 by a vacuum deposition method, for example, compared with the case where the upper electrode 6 is formed by a sputtering method, the organic light emitting functional layer. 5 can be reduced, and an optical device having a configuration according to the present invention can be formed by a simple manufacturing process.

[0003]
And seal.
[0006]
Patent Document 1: Japanese Patent Laid-Open No. 2005-63928 Disclosure of the Invention [0007]
However, when sealing with an adhesive 92J such as a thermosetting resin or UV (ultraviolet) curable resin at the time of sealing, uncured components, solvents, and additives inherent in the resin during or after curing Alternatively, deterioration factors (h1) such as moisture, oxygen and other gases from the external atmosphere may enter the organic EL element 100. For example, as shown in FIGS. 1 and 2, the deterioration factor (h1) is considered to enter the interface 56J from the end portion (56Ja) of the interface 56J between the organic light emitting functional layer 5J and the upper electrode 6J. Such an intrusion phenomenon of the deterioration factor (h1) deteriorates the organic EL element 100 in the manufacturing process of the optical device 1J that uses the organic EL element 100 as one pixel. Further, when a predetermined time elapses, such as when the optical device 1J is driven across users (markets, etc.), the deterioration factor (h1) enters the interface 56J between the layers, for example as shown in FIGS. In addition, there is a problem in that a non-light-emitting portion is generated in the peripheral portion of the pixel 11, the width (w) of the non-light-emitting portion is gradually increased, and the light-emitting defective portion of the optical device 1J is enlarged.
[0008]
This invention makes it an example of a subject to cope with such a problem. That is, in an optical device having a self-luminous element in which an organic light emitting functional layer including a light emitting layer is sandwiched between a lower electrode and an upper electrode, water, oxygen, organic gas, etc. are present at the interface between the upper electrode and the organic light emitting functional layer. It is an object of the present invention to reduce light emitting defects caused by the intrusion of deterioration factors, to reduce display defects of optical devices due to light emitting defects of self-luminous elements such as organic EL elements.
Means for Solving the Problems [0009]
An object of the present invention is to solve the above-described problems.
The invention according to claim 1 is an optical device in which one or a plurality of the pixels are formed by using, as one pixel, an organic EL element having at least a light emitting layer sandwiched between a pair of electrodes, the substrate, A lower electrode formed directly or indirectly on the substrate, a first insulating film patterned on the substrate and / or the lower electrode to form a pixel region, and the pixel region formed by the first insulating film in the pixel region An organic light emitting functional layer including the light emitting layer, an upper electrode formed on the organic light emitting functional layer, a second insulating film formed on the upper electrode, and a film formation region of the upper electrode An organic material layer formed in a wider area, and the organic material

[0004]
An inorganic layer formed on the material layer, and a sealing portion that seals at least the organic EL element formed on the substrate with a sealing material, the organic light emitting functional layer, the upper electrode, The end of the region where the organic material layer and the inorganic layer overlap is formed on the first insulating film and covered with the second insulating film, and the end of the region where the organic material layer and the inorganic layer overlap with each other. It is characterized by being formed in an upper layer of the first insulating film on the outer end side of the sealing portion from the end portion of the region where the upper electrode overlaps.
[0010]
[0011]

[0005]
[0012]
According to a fourth aspect of the present invention, there is provided an optical device in which one or a plurality of the pixels are formed with an organic EL element in which an organic light emitting functional layer including at least a light emitting layer is sandwiched between a pair of electrodes as one pixel. In the manufacturing method, a lower electrode is formed on the substrate directly or via another layer, and a pixel region is formed on the substrate and / or the lower electrode by patterning a first insulating film. A pixel region forming step, an organic light emitting functional layer forming step of forming an organic light emitting functional layer functioning as a pixel by light emission and / or non-light emission on the lower electrode by vacuum deposition, and an upper electrode on the organic light emitting functional layer An upper electrode forming step formed by vacuum deposition, and an end portion of a region where the organic light emitting functional layer and the upper electrode overlap are formed on the first insulating film and the second insulating film. A second insulating film forming step of forming the second insulating film on the organic EL element by vacuum vapor deposition, and an organic material layer forming step of forming an organic material layer on the second insulating film by vacuum vapor deposition, And an inorganic layer forming step of forming an inorganic layer on the organic material layer by vacuum deposition, and a sealing step of forming a sealing portion for sealing the organic EL element formed on the substrate, At the time of the organic material layer forming step and the inorganic layer forming step, an end portion of the region where the organic material layer and the inorganic layer overlap with each other, and an end portion of the region where the organic light emitting functional layer and the upper electrode overlap with each other The first insulating film is formed on the outer end side of the first insulating film.
BRIEF DESCRIPTION OF THE DRAWINGS [0013]
FIG. 1 is a cross-sectional view showing an optical device including a general organic EL (electroluminescence) element.
FIG. 2 is a front view for explaining deterioration of the organic EL element of the optical device.
FIG. 3 is a cross-sectional view for explaining the optical device 1 according to the first embodiment of the present invention.
FIG. 4 is a diagram showing a specific example of a temporal change in the width of a non-light-emitting portion generated at an end portion of a pixel for explaining the effect of the optical device according to the present invention.
FIG. 5 is a diagram for explaining the effect of the optical device according to the first embodiment of the present invention.
FIG. 6 is a diagram for explaining the effect of the optical device according to the second embodiment of the present invention.
FIG. 7 is a cross-sectional view for explaining an optical device according to a second embodiment of the invention.
FIG. 8 is a diagram for explaining an optical device 1 according to a third embodiment of the present invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A).
FIG. 9 is a view for explaining a lower electrode forming step of the optical device manufacturing method according to the third embodiment of the present invention. (A) is a top view, and (B) is a cross-sectional view in the vicinity of the region A shown in (A).

[0010]
be able to. Hereinafter, an example of a bottom emission type passive matrix driving type organic EL panel employing an optical device according to an embodiment of the present invention will be described in detail.
[0028]
As shown in FIG. 3, the optical device 1 according to this embodiment includes a substrate 2, a lower electrode (first electrode) 3, an organic light emitting functional layer 5 including a light emitting layer, an upper electrode (second electrode) 6, and an organic material. It has the layer 7, the inorganic layer 8, and the sealing member 9.
[0029]
The substrate 2 corresponds to one embodiment of the substrate according to the present invention, the lower electrode 3 corresponds to one embodiment of the lower electrode according to the present invention, and the organic light emitting functional layer 5 corresponds to the organic light emitting functional layer according to the present invention. This corresponds to one embodiment. The upper electrode 6 corresponds to an embodiment of the upper electrode according to the present invention, and the organic material layer 7 corresponds to an embodiment of the organic material layer according to the present invention. The inorganic layer 8 corresponds to one embodiment of the inorganic layer according to the present invention, and the sealing member 9 corresponds to one embodiment of the sealing portion according to the present invention.
[0030]
The substrate 2 is preferably, for example, a flat plate or a film, and the material can be glass or plastic. For example, in the bottom emission type optical device 1, the substrate 2 is formed of a transparent material.
[0031]
The lower electrode (first electrode) 3 is made of a conductive material, and is formed on the substrate 2 directly or via another layer (for example, a moisture-impermeable layer). As a material for forming the lower electrode 3, for example, a transparent conductive material such as ITO is employed.
[0032]
The organic light emitting functional layer 5 including the light emitting layer is formed on the lower electrode 3 directly or via another layer (for example, a charge transport layer). The organic light emitting functional layer 5 has a laminated structure such as a charge transport layer and a light emitting layer (also referred to as a light emitting layer). The organic light emitting functional layer 5 is formed by, for example, a vacuum deposition method. Alternatively, it may be formed by a coating, printing method or laser transfer method.
[0033]
The upper electrode (second electrode) 6 is made of a conductive material and is formed on the organic light emitting functional layer 5. Specifically, as shown in FIG. 3, the upper electrode 6 is formed in a narrow range on the organic light emitting functional layer 5 so that the end 6 a is located inside the end 5 a of the organic light emitting functional layer 5. Yes. Specifically, as shown in FIG. 3, the upper electrode 6 is formed by vacuum deposition so that a part of the region where the organic light emitting functional layer 5 is formed is exposed.
[0034]
The self-luminous element 100 is formed by the lower electrode 3, the organic light emitting functional layer 5, and the upper electrode 6. Since the self-luminous element 100 is significantly deteriorated due to deterioration factors such as moisture, the sealing member 9

Claims (20)

A single light emitting element in which an organic light emitting functional layer including a light emitting layer is sandwiched between a lower electrode and an upper electrode is used as one pixel, and one or a plurality of the pixels are formed on the substrate directly or through another layer. Optical device,
An organic material layer formed on the upper electrode of the self-luminous element;
An inorganic layer formed on the organic material layer with insulation from the lower electrode and the upper electrode secured;
A sealing portion that seals the self-luminous element formed on the substrate with a sealing material,
The end portion of the region where the organic material layer and the inorganic layer overlap is located on the outer end side of the sealing portion from the end portion of the region where the organic light emitting functional layer and the upper electrode overlap via the organic material layer. An optical device characterized by being formed apart. A pixel region is formed by the patterned first insulating film, the self-luminous element is formed in the pixel region, and a second insulating film is formed on the self-luminous element,
2. The structure according to claim 1, wherein an end portion of a region where the organic light emitting functional layer and the upper electrode overlap is formed on the first insulating film and covered with the second insulating film. The optical device described.   The capturing part which captures a deterioration factor and reduces deterioration of the organic light emitting functional layer due to the deterioration factor is formed in a region where the organic material layer and the inorganic layer overlap. Item 3. The optical device according to Item 2. The upper electrode is formed on the organic light emitting functional layer in a range narrower than the organic light emitting functional layer, and the organic material layer is formed on the upper electrode in a range wider than the film formation region of the upper electrode. The organic light emitting functional layer and the organic material layer form an interface,
The optical device according to claim 1, wherein the inorganic layer is formed on the organic material layer in a range narrower than a film formation region of the organic material layer. The organic material layer is formed on the upper electrode in a range wider than the film formation region of the upper electrode,
The optical device according to claim 1, wherein the inorganic layer is formed on the organic material layer in a range narrower than a film formation region of the organic material layer.   The optical device according to claim 1, wherein the organic material layer includes at least one organic material constituting the organic light emitting functional layer.   The optical device according to claim 1, wherein the inorganic layer is made of the same material as the upper electrode. The first insulating film patterned on the substrate and / or the lower electrode has a structure in which an end of the upper electrode, an end of the organic material layer, and an end of the inorganic layer are in contact with each other,
The end of the region where the organic material layer and the inorganic layer overlap is separated from the end of the region where the organic light emitting functional layer and the upper electrode overlap with the outer end side of the sealing portion via the organic material layer. The optical device according to claim 1, wherein the optical device is formed as follows.   The optical device according to claim 1, wherein the sealing portion includes a sealing film that covers the entire surface of the organic material layer and the inorganic layer.   The optical device according to claim 1, wherein the self-luminous element is an organic EL element.   2. The optical device according to claim 1, wherein the optical device is an active matrix drive type or a passive matrix drive type. An optical device using an organic EL element having at least a light emitting layer sandwiched between a pair of electrodes as one pixel,
A substrate,
A lower electrode formed directly or indirectly on the substrate;
A first insulating film patterned on the substrate and / or the lower electrode to form a pixel region;
An organic light emitting functional layer including a light emitting layer formed in the pixel region of the first insulating film;
An upper electrode formed on the organic light emitting functional layer;
An organic material layer formed of at least one material constituting the organic light emitting functional layer in a wider range than the film formation region of the upper electrode;
On the organic material layer, an inorganic layer formed of the same material as the upper electrode in a range narrower than the film formation region of the organic material layer,
A sealing film of the organic EL element covering at least the entire surface of the inorganic layer;
An optical device comprising: A self-light emitting element in which an organic light emitting functional layer including at least a light emitting layer is sandwiched between a pair of electrodes as one pixel, and a method of manufacturing an optical device in which one or a plurality of the pixels are formed,
A lower electrode forming step of forming a lower electrode directly on the substrate or via another layer;
An organic light emitting functional layer forming step of forming the organic light emitting functional layer including the light emitting layer on the lower electrode;
An upper electrode forming step of forming an upper electrode on the organic light emitting functional layer;
An organic material layer forming step of forming an organic material layer on the upper electrode;
An inorganic layer forming step of forming an inorganic layer on the organic material layer in a state in which insulation from the lower electrode and the upper electrode is secured;
A sealing step of sealing the self-luminous element formed on the substrate with a sealing material to form a sealing portion,
At the time of the organic material layer forming step and the inorganic layer forming step, an end portion of the region where the organic material layer and the inorganic layer overlap with each other, and an end portion of the region where the organic light emitting functional layer and the upper electrode overlap with each other A method of manufacturing an optical device, comprising: forming an organic material layer on the outer end side of the optical device so as to be spaced apart from each other. A pixel region forming step of forming a pixel region on the substrate and / or the lower electrode by patterning a first insulating film;
The end of the region where the organic light emitting functional layer and the upper electrode overlap is covered with the organic material layer, and the end of the upper electrode, the end of the organic material layer, and the end of the inorganic layer are first. The method of manufacturing an optical device according to claim 13, wherein the optical device is formed in a structure in contact with an insulating film.   The method of manufacturing an optical device according to claim 13, wherein the organic light emitting functional layer, the upper electrode, the organic material layer, and the inorganic layer are formed by a vacuum deposition method. A self-light emitting element in which an organic light emitting functional layer including at least a light emitting layer is sandwiched between a pair of electrodes as one pixel, and a method of manufacturing an optical device in which one or a plurality of the pixels are formed,
A lower electrode forming step of forming a lower electrode directly on the substrate or via another layer;
A pixel region forming step of forming a pixel region on the substrate and / or the lower electrode by patterning a first insulating film;
An organic light emitting functional layer forming step of forming an organic light emitting functional layer functioning as a pixel by light emission and / or non-light emission on the lower electrode by vacuum deposition;
An upper electrode forming step of forming an upper electrode by vacuum deposition on the organic light emitting functional layer so that a part of a region where the organic light emitting functional layer is formed is exposed;
An organic material layer forming step of forming an organic material layer including at least one material constituting the organic light emitting functional layer in a region where the organic light emitting functional layer is exposed;
An inorganic layer forming step of forming an inorganic layer by vacuum deposition on the upper surface of the organic material layer and the range on the exposed region;
A sealing step of sealing the self-luminous element formed on the substrate with a sealing material;
An optical device manufacturing method comprising:   The second insulating film is formed on the self-luminous element so that an end portion of a region where the organic light emitting functional layer and the upper electrode overlap is formed on the first insulating film and covered with the second insulating film. The method of manufacturing an optical device according to claim 16, further comprising a step of forming by vacuum deposition.   The method of manufacturing an optical device according to claim 16, wherein, in the sealing step, a sealing film that covers the entire surface of the organic material layer and the inorganic layer is formed by a vacuum deposition method.   The method of manufacturing an optical device according to claim 16, wherein the self-luminous element is an organic EL element.   The method of manufacturing an optical device according to claim 16, wherein the method is an active matrix drive type or a passive matrix drive type.

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