JPWO2006087786A1 - 太陽電池の製造方法 - Google Patents
太陽電池の製造方法 Download PDFInfo
- Publication number
- JPWO2006087786A1 JPWO2006087786A1 JP2007503526A JP2007503526A JPWO2006087786A1 JP WO2006087786 A1 JPWO2006087786 A1 JP WO2006087786A1 JP 2007503526 A JP2007503526 A JP 2007503526A JP 2007503526 A JP2007503526 A JP 2007503526A JP WO2006087786 A1 JPWO2006087786 A1 JP WO2006087786A1
- Authority
- JP
- Japan
- Prior art keywords
- laser
- solar cell
- manufacturing
- type electrode
- pulse width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 5
- 238000000926 separation method Methods 0.000 abstract description 10
- 229910009372 YVO4 Inorganic materials 0.000 abstract 1
- 238000009434 installation Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 22
- 238000012545 processing Methods 0.000 description 19
- 210000004027 cell Anatomy 0.000 description 17
- 238000010292 electrical insulation Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/002456 WO2006087786A1 (fr) | 2005-02-17 | 2005-02-17 | Procede de fabrication de cellule solaire |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2006087786A1 true JPWO2006087786A1 (ja) | 2008-07-03 |
Family
ID=36916202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007503526A Pending JPWO2006087786A1 (ja) | 2005-02-17 | 2005-02-17 | 太陽電池の製造方法 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPWO2006087786A1 (fr) |
WO (1) | WO2006087786A1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20090091562A (ko) * | 2008-02-25 | 2009-08-28 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
JP2010010493A (ja) * | 2008-06-27 | 2010-01-14 | Sharp Corp | 太陽電池セルおよびその製造方法 |
JP2011009663A (ja) * | 2009-06-29 | 2011-01-13 | Kyocera Corp | 太陽電池素子の製造方法および太陽電池素子の製造装置 |
JP5388761B2 (ja) * | 2009-08-28 | 2014-01-15 | 京セラ株式会社 | 太陽電池素子の製造方法および太陽電池素子の製造装置 |
JP5289578B2 (ja) * | 2009-09-29 | 2013-09-11 | 京セラ株式会社 | 太陽電池素子および太陽電池モジュール |
JP2011151192A (ja) * | 2010-01-21 | 2011-08-04 | Sharp Corp | 太陽電池セル、インターコネクタ付き太陽電池セルおよびその製造方法 |
JP5436276B2 (ja) * | 2010-03-11 | 2014-03-05 | 三菱電機株式会社 | 太陽電池の製造方法 |
KR101668402B1 (ko) | 2011-03-30 | 2016-10-28 | 한화케미칼 주식회사 | 태양 전지 제조 방법 |
KR101708240B1 (ko) * | 2011-06-08 | 2017-02-20 | 엘지전자 주식회사 | 태양 전지 및 그의 반도체 기판 에칭 장비 |
KR20130057285A (ko) * | 2011-11-23 | 2013-05-31 | 삼성에스디아이 주식회사 | 광전변환소자 및 그 제조 방법 |
EP2905812B1 (fr) | 2012-10-04 | 2021-07-21 | Shin-Etsu Chemical Co., Ltd. | Procédé de fabrication de cellule photovoltaïque |
WO2014188773A1 (fr) * | 2013-05-21 | 2014-11-27 | 信越化学工業株式会社 | Procédé de fabrication de cellule solaire, et cellule solaire |
JPWO2015064354A1 (ja) * | 2013-11-01 | 2017-03-09 | パナソニックIpマネジメント株式会社 | 太陽電池 |
JP5909662B2 (ja) * | 2014-04-22 | 2016-04-27 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11312815A (ja) * | 1998-04-28 | 1999-11-09 | Matsushita Electric Ind Co Ltd | 薄膜太陽電池の製造方法 |
JP2002198546A (ja) * | 2000-12-27 | 2002-07-12 | Kyocera Corp | 太陽電池素子の形成方法 |
JP2002231986A (ja) * | 2001-02-07 | 2002-08-16 | Mitsubishi Heavy Ind Ltd | 集積型薄膜太陽電池の製造方法 |
JP4286488B2 (ja) * | 2001-02-21 | 2009-07-01 | キヤノンマシナリー株式会社 | 基板切断方法 |
US6524880B2 (en) * | 2001-04-23 | 2003-02-25 | Samsung Sdi Co., Ltd. | Solar cell and method for fabricating the same |
JP4078137B2 (ja) * | 2002-07-04 | 2008-04-23 | 三菱重工業株式会社 | レーザービームのパルス幅の設定方法 |
-
2005
- 2005-02-17 JP JP2007503526A patent/JPWO2006087786A1/ja active Pending
- 2005-02-17 WO PCT/JP2005/002456 patent/WO2006087786A1/fr not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2006087786A1 (fr) | 2006-08-24 |
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Legal Events
Date | Code | Title | Description |
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A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090714 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090908 |
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A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20091117 |