JPS649621A - Surface treatment of semiconductor substrate - Google Patents
Surface treatment of semiconductor substrateInfo
- Publication number
- JPS649621A JPS649621A JP16458087A JP16458087A JPS649621A JP S649621 A JPS649621 A JP S649621A JP 16458087 A JP16458087 A JP 16458087A JP 16458087 A JP16458087 A JP 16458087A JP S649621 A JPS649621 A JP S649621A
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- semiconductor substrate
- silicon wafer
- covered
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16458087A JPS649621A (en) | 1987-07-01 | 1987-07-01 | Surface treatment of semiconductor substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16458087A JPS649621A (en) | 1987-07-01 | 1987-07-01 | Surface treatment of semiconductor substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS649621A true JPS649621A (en) | 1989-01-12 |
Family
ID=15795872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16458087A Pending JPS649621A (en) | 1987-07-01 | 1987-07-01 | Surface treatment of semiconductor substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS649621A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998050948A1 (en) * | 1997-05-02 | 1998-11-12 | Memc Electronic Materials, Inc. | Method for etching silicon wafer |
CN103119671A (zh) * | 2010-09-22 | 2013-05-22 | 大金工业株式会社 | 膜电容器用膜和膜电容器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6242530A (ja) * | 1985-08-20 | 1987-02-24 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS62139335A (ja) * | 1985-12-13 | 1987-06-23 | Nec Corp | 表面清浄化方法 |
-
1987
- 1987-07-01 JP JP16458087A patent/JPS649621A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6242530A (ja) * | 1985-08-20 | 1987-02-24 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS62139335A (ja) * | 1985-12-13 | 1987-06-23 | Nec Corp | 表面清浄化方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998050948A1 (en) * | 1997-05-02 | 1998-11-12 | Memc Electronic Materials, Inc. | Method for etching silicon wafer |
CN103119671A (zh) * | 2010-09-22 | 2013-05-22 | 大金工业株式会社 | 膜电容器用膜和膜电容器 |
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