JPS6489472A - Crystal silicon solar cell - Google Patents

Crystal silicon solar cell

Info

Publication number
JPS6489472A
JPS6489472A JP62243727A JP24372787A JPS6489472A JP S6489472 A JPS6489472 A JP S6489472A JP 62243727 A JP62243727 A JP 62243727A JP 24372787 A JP24372787 A JP 24372787A JP S6489472 A JPS6489472 A JP S6489472A
Authority
JP
Japan
Prior art keywords
semiconductor layer
forbidden band
width
crystal silicon
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62243727A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0563103B2 (enrdf_load_stackoverflow
Inventor
Tadashi Saito
Tsuyoshi Uematsu
Sunao Matsubara
Yasuhiro Kida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62243727A priority Critical patent/JPS6489472A/ja
Publication of JPS6489472A publication Critical patent/JPS6489472A/ja
Publication of JPH0563103B2 publication Critical patent/JPH0563103B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/545Microcrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/546Polycrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP62243727A 1987-09-30 1987-09-30 Crystal silicon solar cell Granted JPS6489472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243727A JPS6489472A (en) 1987-09-30 1987-09-30 Crystal silicon solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243727A JPS6489472A (en) 1987-09-30 1987-09-30 Crystal silicon solar cell

Publications (2)

Publication Number Publication Date
JPS6489472A true JPS6489472A (en) 1989-04-03
JPH0563103B2 JPH0563103B2 (enrdf_load_stackoverflow) 1993-09-09

Family

ID=17108090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243727A Granted JPS6489472A (en) 1987-09-30 1987-09-30 Crystal silicon solar cell

Country Status (1)

Country Link
JP (1) JPS6489472A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204178A (en) * 1981-06-10 1982-12-14 Matsushita Electric Ind Co Ltd Optoelectric transducer
JPS6136716A (ja) * 1984-07-30 1986-02-21 Minolta Camera Co Ltd マイクロフイルム投影光学系

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57204178A (en) * 1981-06-10 1982-12-14 Matsushita Electric Ind Co Ltd Optoelectric transducer
JPS6136716A (ja) * 1984-07-30 1986-02-21 Minolta Camera Co Ltd マイクロフイルム投影光学系

Also Published As

Publication number Publication date
JPH0563103B2 (enrdf_load_stackoverflow) 1993-09-09

Similar Documents

Publication Publication Date Title
JPS56122123A (en) Semiamorphous semiconductor
JPS5513938A (en) Photoelectronic conversion semiconductor device and its manufacturing method
GB1514548A (en) Multi-layer semiconductor photovoltaic device
CA2161932A1 (en) Photovoltaic Element and Method for Producing the Same
EP0341017A3 (en) Deposited-silicon film solar cell
CA1171977A (en) Electrode and semiconductor device provided with the electrode
JPS5696877A (en) Photoelectric converter
JPS6490524A (en) Manufacture of semiconductor device
EP0241226A3 (en) Semiconductor device and method of making it
GB1452637A (en) Diffusion of impurities into a semiconductor
JPS57187972A (en) Manufacture of solar cell
JPS6489472A (en) Crystal silicon solar cell
JPS57136377A (en) Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
EP0206445A3 (en) Process for forming a semiconductor cell in a silicon semiconductor body and a mixed cmos/bipolar integrated circuit formed in a plurality of such cells
JPS6451671A (en) Solar cell
JP3103737B2 (ja) 太陽電池素子
JPS5670675A (en) Manufacture of photoelectric converter
JPS5760869A (en) Semiconductor device
JPS62113482A (ja) 光起電力装置
JPH0531314B2 (enrdf_load_stackoverflow)
JPS57115822A (en) Manufacture of semiconductor device
Konagai et al. Thin film GaAlAs-GaAs solar cells by peeled film technology
JPS57128083A (en) Photoelectric converting device
JPS57157567A (en) Vertical type p-n-p transistor
JPS5575272A (en) Solar battery

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

LAPS Cancellation because of no payment of annual fees