JPS6488724A - Semiconductor integrated device - Google Patents

Semiconductor integrated device

Info

Publication number
JPS6488724A
JPS6488724A JP24390087A JP24390087A JPS6488724A JP S6488724 A JPS6488724 A JP S6488724A JP 24390087 A JP24390087 A JP 24390087A JP 24390087 A JP24390087 A JP 24390087A JP S6488724 A JPS6488724 A JP S6488724A
Authority
JP
Japan
Prior art keywords
constant voltage
power supply
voltage generating
generating circuit
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24390087A
Other languages
Japanese (ja)
Other versions
JP2544157B2 (en
Inventor
Kazuto Matsuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP62243900A priority Critical patent/JP2544157B2/en
Publication of JPS6488724A publication Critical patent/JPS6488724A/en
Application granted granted Critical
Publication of JP2544157B2 publication Critical patent/JP2544157B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the power consumption of 1st and 2nd constant voltage generating circuits and also to quickly secure a prescribed constant voltage at the application of a power supply by using a MOS transistor whose gate is connected to the output point of the 1st constant voltage generating circuit together with the drain connected to the power supply and the source connected to the output point of the 2nd constant voltage generating circuit respectively. CONSTITUTION:The difference between 1st and 2nd constant voltage levels is increased between time points 0 and t1. When this difference is equal to VT, an enhancement type MOS transistor TR5 goes to a conducting status. The impedance is set under such conditions so that the load capacity 6 is quick ly charged. Thus the 2nd constant voltage level is kept lower than the 1st constant voltage level by VT at and after the time point t1 and reaches a pre scribed level at a time point t2. Thus the power consumption is reduced and also a prescribed constant voltage level is quickly secured at the application of the power supply by setting the TR5 between the power supply and the 2nd constant voltage generating circuit.
JP62243900A 1987-09-30 1987-09-30 Semiconductor integrated circuit device Expired - Lifetime JP2544157B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62243900A JP2544157B2 (en) 1987-09-30 1987-09-30 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62243900A JP2544157B2 (en) 1987-09-30 1987-09-30 Semiconductor integrated circuit device

Publications (2)

Publication Number Publication Date
JPS6488724A true JPS6488724A (en) 1989-04-03
JP2544157B2 JP2544157B2 (en) 1996-10-16

Family

ID=17110668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62243900A Expired - Lifetime JP2544157B2 (en) 1987-09-30 1987-09-30 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JP2544157B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011118602A (en) * 2009-12-02 2011-06-16 Renesas Electronics Corp Semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914287A (en) * 1972-05-22 1974-02-07
JPS5836411U (en) * 1981-09-02 1983-03-09 株式会社東芝 constant voltage power supply

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914287A (en) * 1972-05-22 1974-02-07
JPS5836411U (en) * 1981-09-02 1983-03-09 株式会社東芝 constant voltage power supply

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011118602A (en) * 2009-12-02 2011-06-16 Renesas Electronics Corp Semiconductor device

Also Published As

Publication number Publication date
JP2544157B2 (en) 1996-10-16

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