JPS6487774A - Cvd device for raw material having high specific surface area - Google Patents
Cvd device for raw material having high specific surface areaInfo
- Publication number
- JPS6487774A JPS6487774A JP24408087A JP24408087A JPS6487774A JP S6487774 A JPS6487774 A JP S6487774A JP 24408087 A JP24408087 A JP 24408087A JP 24408087 A JP24408087 A JP 24408087A JP S6487774 A JPS6487774 A JP S6487774A
- Authority
- JP
- Japan
- Prior art keywords
- vessel
- reactive gas
- raw materials
- raw material
- surface area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
PURPOSE:To uniformize coating and to prevent the wasteful consumption of a reactive gas and the contamination of a device by constructing a device in such a manner that titled raw materials are agitated in a rotating vessel and a reactive gas flows only in the inside of the rotating vessel. CONSTITUTION:For example, the raw materials are introduced into the raw material vessel 1 made of a graphite cylinder which is connected at one end and the other end to reactive gas introducing port and discharge ports 6, 7, respectively. After the inside of the vessel 1 is evacuated to a vacuum atmosphere by a vacuum pump of a reactive gas supplying device 9, the vessel 1 is rotated around its axis by a rotational driving means 14. The vessel 1 is simultaneously heated by a heating means 12. The vacuum atmosphere is maintained in a hermetic vessel 8 enclosing the vessel 1 by an atmosphere regulator 11. The reactive gas is introduced in this state from the device 9 into the vessel 1 via the inlet 6 and the exhaust gas of reaction is discharged from the outlet 7, by which the reactive gas is deposited on the surface of the raw materials 8 and the uniform coating is executed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24408087A JPS6487774A (en) | 1987-09-30 | 1987-09-30 | Cvd device for raw material having high specific surface area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24408087A JPS6487774A (en) | 1987-09-30 | 1987-09-30 | Cvd device for raw material having high specific surface area |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6487774A true JPS6487774A (en) | 1989-03-31 |
Family
ID=17113435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24408087A Pending JPS6487774A (en) | 1987-09-30 | 1987-09-30 | Cvd device for raw material having high specific surface area |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6487774A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002060943A (en) * | 2000-08-22 | 2002-02-28 | Tohoku Electric Power Co Inc | Method and device for coating high purity silicon |
| JPWO2006115242A1 (en) * | 2005-04-25 | 2008-12-18 | 株式会社ユーテック | Surface-treated fine particles, surface treatment apparatus, and fine particle surface treatment method |
-
1987
- 1987-09-30 JP JP24408087A patent/JPS6487774A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002060943A (en) * | 2000-08-22 | 2002-02-28 | Tohoku Electric Power Co Inc | Method and device for coating high purity silicon |
| JPWO2006115242A1 (en) * | 2005-04-25 | 2008-12-18 | 株式会社ユーテック | Surface-treated fine particles, surface treatment apparatus, and fine particle surface treatment method |
| JP2013176770A (en) * | 2005-04-25 | 2013-09-09 | Utec:Kk | Surface-fluorinated fine particle, surface fluorination apparatus, and method for producing surface-fluorinated fine particle |
| JP2014097502A (en) * | 2005-04-25 | 2014-05-29 | Yuutekku:Kk | Method for producing fine particle |
| JP5721923B2 (en) * | 2005-04-25 | 2015-05-20 | 株式会社ユーテック | Surface-treated fine particles, surface treatment apparatus, and fine particle surface treatment method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3637434A (en) | Vapor deposition apparatus | |
| FR2490246B1 (en) | ||
| KR910002515A (en) | Chemical Vapor Deposition Reactor and Its Operation Method | |
| KR101637980B1 (en) | Apparatus and method for thermal chemical vapor deposition | |
| JPS6487774A (en) | Cvd device for raw material having high specific surface area | |
| CN209522919U (en) | Chemical vapor deposition stove and chemical vapor depsotition equipment | |
| GB1297706A (en) | ||
| EP0321925A3 (en) | Apparatus for analysis employing electron | |
| CN218951490U (en) | Atomic layer deposition reaction device | |
| CN109763116B (en) | Dual-axis orthogonal rotation system and method for CVD equipment | |
| CN206481488U (en) | A kind of novel microwave plasma processing apparatus | |
| JPS57102022A (en) | Reactive sputter etching equipment | |
| JPS5855561A (en) | Carburization apparatus | |
| KR970000511Y1 (en) | Coating apparatus for chemical vapor deposition | |
| JPH0555150A (en) | Microwave plasma processing apparatus | |
| JPH0634057A (en) | Material valve for bulk cargo or liquid | |
| CN220071664U (en) | Reaction kettle with air stirring function | |
| JPS57192266A (en) | Plasma surface treating apparatus | |
| JPS5523085A (en) | Production of silicon film | |
| JPS6441211A (en) | Semiconductor growth device | |
| JPS61251118A (en) | Chemical vapor deposition processing method | |
| RU1768675C (en) | Device for epitaxyal growing of semi-conductive materials | |
| JPH0317491A (en) | Baking furnace | |
| JPS57114659A (en) | Vacuum cvd device | |
| JPS55162221A (en) | Apparatus for vapor growth |