JPS64869B2 - - Google Patents

Info

Publication number
JPS64869B2
JPS64869B2 JP59129162A JP12916284A JPS64869B2 JP S64869 B2 JPS64869 B2 JP S64869B2 JP 59129162 A JP59129162 A JP 59129162A JP 12916284 A JP12916284 A JP 12916284A JP S64869 B2 JPS64869 B2 JP S64869B2
Authority
JP
Japan
Prior art keywords
semiconductor substrate
conductivity type
photodiode
impurity region
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59129162A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6051082A (ja
Inventor
Masaaki Nakai
Shinya Ooba
Toshibumi Ozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59129162A priority Critical patent/JPS6051082A/ja
Publication of JPS6051082A publication Critical patent/JPS6051082A/ja
Publication of JPS64869B2 publication Critical patent/JPS64869B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP59129162A 1984-06-25 1984-06-25 固体撮像装置 Granted JPS6051082A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59129162A JPS6051082A (ja) 1984-06-25 1984-06-25 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59129162A JPS6051082A (ja) 1984-06-25 1984-06-25 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS6051082A JPS6051082A (ja) 1985-03-22
JPS64869B2 true JPS64869B2 (enrdf_load_stackoverflow) 1989-01-09

Family

ID=15002674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59129162A Granted JPS6051082A (ja) 1984-06-25 1984-06-25 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS6051082A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5521472B2 (enrdf_load_stackoverflow) * 1971-08-11 1980-06-10

Also Published As

Publication number Publication date
JPS6051082A (ja) 1985-03-22

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