JPS6484560A - Channel type secondary electron doubling device - Google Patents

Channel type secondary electron doubling device

Info

Publication number
JPS6484560A
JPS6484560A JP24145587A JP24145587A JPS6484560A JP S6484560 A JPS6484560 A JP S6484560A JP 24145587 A JP24145587 A JP 24145587A JP 24145587 A JP24145587 A JP 24145587A JP S6484560 A JPS6484560 A JP S6484560A
Authority
JP
Japan
Prior art keywords
output
power source
voltage
output signal
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24145587A
Other languages
Japanese (ja)
Inventor
Hiroshi Takeuchi
Kazuo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Japan Atomic Energy Agency
Original Assignee
Toshiba Corp
Japan Atomic Energy Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Japan Atomic Energy Research Institute filed Critical Toshiba Corp
Priority to JP24145587A priority Critical patent/JPS6484560A/en
Publication of JPS6484560A publication Critical patent/JPS6484560A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent breakage of a device even when applying high voltage after shifting elements into inside of a vacuum by providing an output signal detecting means which gathers secondary electrons amplified by a secondary electrons doubling element to obtain an output signal and a power source voltage control means which controls the output voltage of a high voltage power source to apply voltage at the specified level to the said element. CONSTITUTION:When creeping discharge occurs in an element 1, in the initial condition where secondary electrons doubling element 1 is shifted from the air to a vacuum, output signals of an output signal detecting circuit 12 rises up gradually, When the output signal exceeds the specified value, the detecting circuit 12 sends out an detection signal S to a power source voltage controller 3. The controller 13, when the signal S is inputted, stops the output voltage elevation of a high voltage power source 11. Hereby, the creeping discharge is calmed and the said output signal decreases gradually. When the output signal becomes the standard value, the output of signal S from the detection circuit 12 is stopped and the output voltage of the power source 11 rerises at the speed based on the time constant being set in advance by the controller 13. Thereafter, the similar action is repeated.
JP24145587A 1987-09-25 1987-09-25 Channel type secondary electron doubling device Pending JPS6484560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24145587A JPS6484560A (en) 1987-09-25 1987-09-25 Channel type secondary electron doubling device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24145587A JPS6484560A (en) 1987-09-25 1987-09-25 Channel type secondary electron doubling device

Publications (1)

Publication Number Publication Date
JPS6484560A true JPS6484560A (en) 1989-03-29

Family

ID=17074566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24145587A Pending JPS6484560A (en) 1987-09-25 1987-09-25 Channel type secondary electron doubling device

Country Status (1)

Country Link
JP (1) JPS6484560A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002520798A (en) * 1998-07-16 2002-07-09 パーキンエルマー オプトエレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング Photodetector and manufacturing method thereof
JP2011129362A (en) * 2009-12-17 2011-06-30 Institute Of Physical & Chemical Research Microchannel plate assembly and microchannel plate detector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002520798A (en) * 1998-07-16 2002-07-09 パーキンエルマー オプトエレクトロニクス ゲゼルシャフト ミット ベシュレンクテル ハフツング Photodetector and manufacturing method thereof
JP2011129362A (en) * 2009-12-17 2011-06-30 Institute Of Physical & Chemical Research Microchannel plate assembly and microchannel plate detector

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