JPS6483135A - Measuring apparatus of polarized infrared ray for thin film - Google Patents
Measuring apparatus of polarized infrared ray for thin filmInfo
- Publication number
- JPS6483135A JPS6483135A JP23874387A JP23874387A JPS6483135A JP S6483135 A JPS6483135 A JP S6483135A JP 23874387 A JP23874387 A JP 23874387A JP 23874387 A JP23874387 A JP 23874387A JP S6483135 A JPS6483135 A JP S6483135A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- polarized light
- infrared
- respect
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Spectrometry And Color Measurement (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
PURPOSE:To improve precision by a method wherein a sample tilted by a Brewster angle corresponding to the refractive index of the sample with respect to a polarization plane from the vertical direction is set in a focusing part whereon an infrared polarized light is focused, so as to prevent the multiple reflection generated between the surfaces of a thin film. CONSTITUTION:An infrared light 1 composed of random polarized light components is turned to be a linearly polarized light 3 by a polarizer 2, and it is focused on a focal position by a concave mirror 4. Besides, a rotary sample holder 5 holding a thin-film sample 6 is tilted by tan phi = 1/n corresponding to the refractive index (n) of a sample 6 with respect to the polarized light 3 from the vertical direction, and disposed in a focusing part. Next, the holder 5 is rotated within the same plane and the direction of the film of the sample 6 with respect to the direction of polarization of the polarized light 3 is set at a prescribed position. Then, only the polarized light 3 being transmitted is made to fall on a concave mirror 7 and restored to a parallel infrared light flux 8, and the flux is subjected to wavelength dispersion by an infrared dispersion element 9 and detected by a detector 10. Accordingly, the effect of light interference is prevented and precise measurement can be attained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23874387A JPS6483135A (en) | 1987-09-25 | 1987-09-25 | Measuring apparatus of polarized infrared ray for thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23874387A JPS6483135A (en) | 1987-09-25 | 1987-09-25 | Measuring apparatus of polarized infrared ray for thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6483135A true JPS6483135A (en) | 1989-03-28 |
Family
ID=17034597
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23874387A Pending JPS6483135A (en) | 1987-09-25 | 1987-09-25 | Measuring apparatus of polarized infrared ray for thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6483135A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0488652A (en) * | 1990-07-31 | 1992-03-23 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer |
JPH04105046A (en) * | 1990-08-27 | 1992-04-07 | Toshiba Ceramics Co Ltd | Measuring method for inter-lattice oxygen concentration of drawup silicon wafer |
JPH04106947A (en) * | 1990-08-27 | 1992-04-08 | Toshiba Ceramics Co Ltd | Interlattice oxygen concentration measurement of pulled-up silicon wafer |
JPH04106948A (en) * | 1990-08-27 | 1992-04-08 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer |
JPH04108693A (en) * | 1990-08-29 | 1992-04-09 | Toshiba Ceramics Co Ltd | Production of silicon wafer |
JPH04108692A (en) * | 1990-08-29 | 1992-04-09 | Toshiba Ceramics Co Ltd | Production of silicon wafer |
JPH04109146A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Substitution type carbon concentration measuring method for pickup silicone wafer |
JPH04109648A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer |
JPH04109145A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Substitution type carbon concentration measuring method for pickup silicone wafer |
JPH04180644A (en) * | 1990-07-31 | 1992-06-26 | Toshiba Ceramics Co Ltd | Method of measuring interstitial oxygen concentration of pulled silicon wafer |
US5243119A (en) * | 1988-12-12 | 1993-09-07 | Ethyl Corporation | Alkene dimerization |
JPH05243353A (en) * | 1992-02-27 | 1993-09-21 | Toshiba Ceramics Co Ltd | Measuring method for concentration of interstitial oxygen or substitutional carbon of silicon wafer |
CN107589076A (en) * | 2017-10-30 | 2018-01-16 | 中国科学院合肥物质科学研究院 | Infrared polarization binary channels spectral measurement system |
-
1987
- 1987-09-25 JP JP23874387A patent/JPS6483135A/en active Pending
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243119A (en) * | 1988-12-12 | 1993-09-07 | Ethyl Corporation | Alkene dimerization |
JPH0488652A (en) * | 1990-07-31 | 1992-03-23 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer |
JPH04180644A (en) * | 1990-07-31 | 1992-06-26 | Toshiba Ceramics Co Ltd | Method of measuring interstitial oxygen concentration of pulled silicon wafer |
JPH04106948A (en) * | 1990-08-27 | 1992-04-08 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer |
JPH04106947A (en) * | 1990-08-27 | 1992-04-08 | Toshiba Ceramics Co Ltd | Interlattice oxygen concentration measurement of pulled-up silicon wafer |
JPH04105046A (en) * | 1990-08-27 | 1992-04-07 | Toshiba Ceramics Co Ltd | Measuring method for inter-lattice oxygen concentration of drawup silicon wafer |
JPH04108693A (en) * | 1990-08-29 | 1992-04-09 | Toshiba Ceramics Co Ltd | Production of silicon wafer |
JPH04108692A (en) * | 1990-08-29 | 1992-04-09 | Toshiba Ceramics Co Ltd | Production of silicon wafer |
JPH04109146A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Substitution type carbon concentration measuring method for pickup silicone wafer |
JPH04109648A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Manufacture of silicon wafer |
JPH04109145A (en) * | 1990-08-29 | 1992-04-10 | Toshiba Ceramics Co Ltd | Substitution type carbon concentration measuring method for pickup silicone wafer |
JPH05243353A (en) * | 1992-02-27 | 1993-09-21 | Toshiba Ceramics Co Ltd | Measuring method for concentration of interstitial oxygen or substitutional carbon of silicon wafer |
CN107589076A (en) * | 2017-10-30 | 2018-01-16 | 中国科学院合肥物质科学研究院 | Infrared polarization binary channels spectral measurement system |
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