JPS6483135A - Measuring apparatus of polarized infrared ray for thin film - Google Patents

Measuring apparatus of polarized infrared ray for thin film

Info

Publication number
JPS6483135A
JPS6483135A JP23874387A JP23874387A JPS6483135A JP S6483135 A JPS6483135 A JP S6483135A JP 23874387 A JP23874387 A JP 23874387A JP 23874387 A JP23874387 A JP 23874387A JP S6483135 A JPS6483135 A JP S6483135A
Authority
JP
Japan
Prior art keywords
sample
polarized light
infrared
respect
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23874387A
Other languages
Japanese (ja)
Inventor
Kenji Tochigi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP23874387A priority Critical patent/JPS6483135A/en
Publication of JPS6483135A publication Critical patent/JPS6483135A/en
Pending legal-status Critical Current

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  • Spectrometry And Color Measurement (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

PURPOSE:To improve precision by a method wherein a sample tilted by a Brewster angle corresponding to the refractive index of the sample with respect to a polarization plane from the vertical direction is set in a focusing part whereon an infrared polarized light is focused, so as to prevent the multiple reflection generated between the surfaces of a thin film. CONSTITUTION:An infrared light 1 composed of random polarized light components is turned to be a linearly polarized light 3 by a polarizer 2, and it is focused on a focal position by a concave mirror 4. Besides, a rotary sample holder 5 holding a thin-film sample 6 is tilted by tan phi = 1/n corresponding to the refractive index (n) of a sample 6 with respect to the polarized light 3 from the vertical direction, and disposed in a focusing part. Next, the holder 5 is rotated within the same plane and the direction of the film of the sample 6 with respect to the direction of polarization of the polarized light 3 is set at a prescribed position. Then, only the polarized light 3 being transmitted is made to fall on a concave mirror 7 and restored to a parallel infrared light flux 8, and the flux is subjected to wavelength dispersion by an infrared dispersion element 9 and detected by a detector 10. Accordingly, the effect of light interference is prevented and precise measurement can be attained.
JP23874387A 1987-09-25 1987-09-25 Measuring apparatus of polarized infrared ray for thin film Pending JPS6483135A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23874387A JPS6483135A (en) 1987-09-25 1987-09-25 Measuring apparatus of polarized infrared ray for thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23874387A JPS6483135A (en) 1987-09-25 1987-09-25 Measuring apparatus of polarized infrared ray for thin film

Publications (1)

Publication Number Publication Date
JPS6483135A true JPS6483135A (en) 1989-03-28

Family

ID=17034597

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23874387A Pending JPS6483135A (en) 1987-09-25 1987-09-25 Measuring apparatus of polarized infrared ray for thin film

Country Status (1)

Country Link
JP (1) JPS6483135A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0488652A (en) * 1990-07-31 1992-03-23 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04105046A (en) * 1990-08-27 1992-04-07 Toshiba Ceramics Co Ltd Measuring method for inter-lattice oxygen concentration of drawup silicon wafer
JPH04106947A (en) * 1990-08-27 1992-04-08 Toshiba Ceramics Co Ltd Interlattice oxygen concentration measurement of pulled-up silicon wafer
JPH04106948A (en) * 1990-08-27 1992-04-08 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04108693A (en) * 1990-08-29 1992-04-09 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH04108692A (en) * 1990-08-29 1992-04-09 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH04109146A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Substitution type carbon concentration measuring method for pickup silicone wafer
JPH04109648A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04109145A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Substitution type carbon concentration measuring method for pickup silicone wafer
JPH04180644A (en) * 1990-07-31 1992-06-26 Toshiba Ceramics Co Ltd Method of measuring interstitial oxygen concentration of pulled silicon wafer
US5243119A (en) * 1988-12-12 1993-09-07 Ethyl Corporation Alkene dimerization
JPH05243353A (en) * 1992-02-27 1993-09-21 Toshiba Ceramics Co Ltd Measuring method for concentration of interstitial oxygen or substitutional carbon of silicon wafer
CN107589076A (en) * 2017-10-30 2018-01-16 中国科学院合肥物质科学研究院 Infrared polarization binary channels spectral measurement system

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5243119A (en) * 1988-12-12 1993-09-07 Ethyl Corporation Alkene dimerization
JPH0488652A (en) * 1990-07-31 1992-03-23 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04180644A (en) * 1990-07-31 1992-06-26 Toshiba Ceramics Co Ltd Method of measuring interstitial oxygen concentration of pulled silicon wafer
JPH04106948A (en) * 1990-08-27 1992-04-08 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04106947A (en) * 1990-08-27 1992-04-08 Toshiba Ceramics Co Ltd Interlattice oxygen concentration measurement of pulled-up silicon wafer
JPH04105046A (en) * 1990-08-27 1992-04-07 Toshiba Ceramics Co Ltd Measuring method for inter-lattice oxygen concentration of drawup silicon wafer
JPH04108693A (en) * 1990-08-29 1992-04-09 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH04108692A (en) * 1990-08-29 1992-04-09 Toshiba Ceramics Co Ltd Production of silicon wafer
JPH04109146A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Substitution type carbon concentration measuring method for pickup silicone wafer
JPH04109648A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Manufacture of silicon wafer
JPH04109145A (en) * 1990-08-29 1992-04-10 Toshiba Ceramics Co Ltd Substitution type carbon concentration measuring method for pickup silicone wafer
JPH05243353A (en) * 1992-02-27 1993-09-21 Toshiba Ceramics Co Ltd Measuring method for concentration of interstitial oxygen or substitutional carbon of silicon wafer
CN107589076A (en) * 2017-10-30 2018-01-16 中国科学院合肥物质科学研究院 Infrared polarization binary channels spectral measurement system

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