JPS6482551A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6482551A
JPS6482551A JP24183487A JP24183487A JPS6482551A JP S6482551 A JPS6482551 A JP S6482551A JP 24183487 A JP24183487 A JP 24183487A JP 24183487 A JP24183487 A JP 24183487A JP S6482551 A JPS6482551 A JP S6482551A
Authority
JP
Japan
Prior art keywords
biasing
envelope
recess
resistor
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24183487A
Other languages
Japanese (ja)
Inventor
Yoshinobu Kadowaki
Shigeo Iki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP24183487A priority Critical patent/JPS6482551A/en
Publication of JPS6482551A publication Critical patent/JPS6482551A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a semiconductor device having functions of a stabilized resistor in a package itself, by providing a resistor pattern between each DC biasing lead and a connecting section of a DC biasing electrode of a semiconductor chip received in a recess in an envelope. CONSTITUTION:An envelope 1 having a recess for receiving a semiconductor chip is provided and a plurality of DC biasing leads 3, 5 are provided such that they are projected from predetermined points of the envelope 1. Resistor patterns 32, 52 are provided between the DC biasing leads 3, 6 and connecting sections 31, 51 of DC biasing electrodes of the semiconductor chip received in the recess of the envelope 1, respectively. According to such arrangement, resistor patterns 32, 52 formed in a package serve equivalently to stabilized resistors which used to be provided in conventional amplifier ICs and heat generation within the amplifier IC can be prevented to eliminate abnormal oscillation of the circuit. Thus, a semiconductor device having stable characteristics can be obtained.
JP24183487A 1987-09-24 1987-09-24 Semiconductor device Pending JPS6482551A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24183487A JPS6482551A (en) 1987-09-24 1987-09-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24183487A JPS6482551A (en) 1987-09-24 1987-09-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6482551A true JPS6482551A (en) 1989-03-28

Family

ID=17080190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24183487A Pending JPS6482551A (en) 1987-09-24 1987-09-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6482551A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0514002A (en) * 1991-07-05 1993-01-22 Mitsubishi Electric Corp Semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0514002A (en) * 1991-07-05 1993-01-22 Mitsubishi Electric Corp Semiconductor device

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