JPH0514002A - Semiconductor device - Google Patents

Abstract

PURPOSE:To realize the semiconductor device not requiring the adjustment of a voltage externally and for ease of use. CONSTITUTION:A resistance pattern 6 is provided in a package 7. A DC bias voltage of each FET of an MMIC chip 5 is adjusted to a required value by the resistance pattern 6. An external voltage applied to a common gate bias terminal 30 of the package 7 is a prescribed voltage and the voltage divided by the resistance pattern 6 is distributed to each FET.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to improvement of a microwave band semiconductor device package structure.

[0002]

2. Description of the Related Art As a microwave semiconductor device, there is a monolithic microwave integrated circuit amplifier (hereinafter referred to as MMIC amplifier). FIG. 2 is an internal visual view showing a state in which a conventional MMIC amplifier package has a lid removed. And a field effect transistor (hereinafter referred to as FET) 3
Have pieces. In the figure, 5 is an MMIC amplifier chip, 7 is a package for housing the MMIC chip 5 which is a semiconductor element, 1 is an input signal terminal provided on the package 7, and 2 is an output signal terminal provided on the package 7. is there. 31, 32, and 33 are FEs included in MMIC
It is a gate bias terminal of T and is provided in the package 7. Similarly, reference numerals 41, 42 and 43 denote FET drain bias terminals, which are provided in the package 7.
Reference numeral 8 is a bonding wire that connects the MMIC chip 5 and each terminal of the package 7.

Next, the operation will be described. In the MMIC amplifier, the gate voltage is externally adjusted in order to set the DC bias condition of the FET to a predetermined value. For example, in the MMIC amplifier including three FETs shown in FIG.
Gate bias terminals 31, 32, and 33 are provided for T, and the gate voltage input from the outside is adjusted.

[0004]

Since the conventional semiconductor device is configured as described above, it is necessary to adjust a plurality of gate voltages during actual use, which is troublesome and time consuming for adjustment. was there.

The present invention has been made to solve the above problems, and an object thereof is to obtain a semiconductor device which does not require external adjustment of the gate voltage.

[0006]

A semiconductor device according to the present invention is a package in which a semiconductor element is housed and a resistance pattern for adjusting a voltage applied to the semiconductor element is formed.

[0007]

According to the present invention, the package for accommodating the semiconductor element is provided with the resistance pattern for adjusting the voltage applied to the semiconductor element. Therefore, the voltage is adjusted by the resistance pattern and the voltage is not externally adjusted. Then, a required voltage can be applied to the semiconductor element.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an internal visual view showing a state in which a package lid of an MMIC amplifier, which is a semiconductor device according to an embodiment of the present invention, is removed, and has three FETs.
In the figure, the same reference numerals as those in FIG. 2 indicate the same or corresponding portions, and 6 is a resistance pattern for applying a DC voltage to a semiconductor element (MMIC chip), which is provided in the package 7.
Reference numeral 30 denotes a common gate bias terminal of the FET included in the MMIC, which is provided in the package 7. 40 is MMI
The common drain bias terminal of the FET included in C is provided in the package 7. In addition, since the drain bias terminal can share the same voltage in the related art, the common drain bias terminal 40 can be used.

Next, the operation will be described. The resistance pattern 6 sets the voltage applied to the gate bias terminal 30 to MM.
In order to apply a required gate voltage to each FET of the IC chip 5, the voltage applied to the gate bias terminal 30 is resistance-divided and converted. That is, although the external gate terminal has a predetermined voltage, each FET of the internal MMIC chip 5 is
The gate voltage varies depending on the resistance pattern 6.

As described above, in this embodiment, since the resistance pattern 6 for adjusting the gate voltage is provided in the portion of the package 7 in which the MMIC chip 5 is housed, the gate bias terminal 30 is provided.
Is common to each of the MMIC chips 5, and the DC bias voltage of each FET of the MMIC chip 5 can be adjusted to a required value.
A MIC amplifier can be obtained.

[0011]

As described above, according to the semiconductor device of the present invention, since the resistance pattern for adjusting the applied voltage to the semiconductor element is formed in the package that accommodates the semiconductor element, the voltage adjustment is performed by the resistance pattern. Therefore, it is possible to obtain a semiconductor device which does not require adjustment of the external voltage and is easy to use.

[Brief description of drawings]

FIG. 1 is an internal visual view showing an MMIC amplifier according to an embodiment of the present invention.

FIG. 2 is an internal visual view showing a conventional MMIC amplifier.

[Explanation of symbols]

 1 Input signal terminal 2 Output signal terminal 5 MMIC chip 6 Resistance pattern 7 Package 8 Bonding wire 30 Common gate bias terminal 40 Common drain bias terminal

Claims (1)

Claim: What is claimed is: 1. A semiconductor device comprising a semiconductor element housed in a package, wherein the package is formed with a resistance pattern for adjusting a voltage applied to the semiconductor element. Semiconductor device.