JPS6481918A - Manufacture of three-dimensional optical circuit element - Google Patents
Manufacture of three-dimensional optical circuit elementInfo
- Publication number
- JPS6481918A JPS6481918A JP62240261A JP24026187A JPS6481918A JP S6481918 A JPS6481918 A JP S6481918A JP 62240261 A JP62240261 A JP 62240261A JP 24026187 A JP24026187 A JP 24026187A JP S6481918 A JPS6481918 A JP S6481918A
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- substrate
- ion beam
- converged
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/134—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms
- G02B6/1347—Integrated optical circuits characterised by the manufacturing method by substitution by dopant atoms using ion implantation
Abstract
PURPOSE:To reduce the man-hours and manufacturing time required for the manufacture by drawing a three-dimensional waveguide on a substrate with a convergent ion beam which is generated by using a rare earth element as an ion seed. CONSTITUTION:The rare earth element is vaporized by being heated, then ionized, and further converged by a lens using an electric field or magnetic field to generate the converged ion beam 1 of rare earth ions. This converged ion beam 1 is deflected by the electric or magnetic field to implant rare earth ions in the surface layer of the substrate 3 in a desired pattern and the ion- implanted part of the substrate is reformed to vary in refractive index in three dimensions, thereby forming an optical waveguide 2. Thus, the three-dimensional waveguide 2 is drawn with the converged ion beam generated by using the rare earth element as the ion seed to enable the drawing on an optional substrate 3 without using any mask, so the process is facilitated and the manufacturing time is shortened.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62240261A JPS6481918A (en) | 1987-09-25 | 1987-09-25 | Manufacture of three-dimensional optical circuit element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62240261A JPS6481918A (en) | 1987-09-25 | 1987-09-25 | Manufacture of three-dimensional optical circuit element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6481918A true JPS6481918A (en) | 1989-03-28 |
Family
ID=17056865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62240261A Pending JPS6481918A (en) | 1987-09-25 | 1987-09-25 | Manufacture of three-dimensional optical circuit element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6481918A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994023477A1 (en) * | 1993-03-26 | 1994-10-13 | Honeywell Inc. | Method of fabricating diode lasers using ion beam deposition |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5093795A (en) * | 1973-12-20 | 1975-07-26 | ||
JPS61183609A (en) * | 1985-02-09 | 1986-08-16 | Agency Of Ind Science & Technol | Manufacture of optical semiconductor device by ion implantation |
JPS62276528A (en) * | 1986-05-26 | 1987-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Optical logic circuit |
-
1987
- 1987-09-25 JP JP62240261A patent/JPS6481918A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5093795A (en) * | 1973-12-20 | 1975-07-26 | ||
JPS61183609A (en) * | 1985-02-09 | 1986-08-16 | Agency Of Ind Science & Technol | Manufacture of optical semiconductor device by ion implantation |
JPS62276528A (en) * | 1986-05-26 | 1987-12-01 | Nippon Telegr & Teleph Corp <Ntt> | Optical logic circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1994023477A1 (en) * | 1993-03-26 | 1994-10-13 | Honeywell Inc. | Method of fabricating diode lasers using ion beam deposition |
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