JPS6481289A - Semiconductor laser - Google Patents
Semiconductor laserInfo
- Publication number
- JPS6481289A JPS6481289A JP23782187A JP23782187A JPS6481289A JP S6481289 A JPS6481289 A JP S6481289A JP 23782187 A JP23782187 A JP 23782187A JP 23782187 A JP23782187 A JP 23782187A JP S6481289 A JPS6481289 A JP S6481289A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- faces
- visible
- strain superlattice
- end faces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23782187A JPH071817B2 (ja) | 1987-09-22 | 1987-09-22 | 半導体レーザ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23782187A JPH071817B2 (ja) | 1987-09-22 | 1987-09-22 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6481289A true JPS6481289A (en) | 1989-03-27 |
JPH071817B2 JPH071817B2 (ja) | 1995-01-11 |
Family
ID=17020899
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23782187A Expired - Lifetime JPH071817B2 (ja) | 1987-09-22 | 1987-09-22 | 半導体レーザ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH071817B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006013436A (ja) * | 2004-05-26 | 2006-01-12 | Sharp Corp | 窒化物半導体レーザ装置、その製造方法およびその組み立て装置 |
US8432948B2 (en) | 2008-07-10 | 2013-04-30 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
JP2019515490A (ja) * | 2016-04-20 | 2019-06-06 | トルンプフ フォトニクス インコーポレイテッドTrumpf Photonics Inc. | レーザ切子面のパッシベーションおよび当該パッシベーションを実施するためのシステム |
-
1987
- 1987-09-22 JP JP23782187A patent/JPH071817B2/ja not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006013436A (ja) * | 2004-05-26 | 2006-01-12 | Sharp Corp | 窒化物半導体レーザ装置、その製造方法およびその組み立て装置 |
US8432948B2 (en) | 2008-07-10 | 2013-04-30 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
JP5443356B2 (ja) * | 2008-07-10 | 2014-03-19 | 株式会社東芝 | 半導体レーザ装置 |
JP2019515490A (ja) * | 2016-04-20 | 2019-06-06 | トルンプフ フォトニクス インコーポレイテッドTrumpf Photonics Inc. | レーザ切子面のパッシベーションおよび当該パッシベーションを実施するためのシステム |
Also Published As
Publication number | Publication date |
---|---|
JPH071817B2 (ja) | 1995-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment |
Free format text: PAYMENT UNTIL: 20080111 Year of fee payment: 13 |