JPS6480908A - Spectral element - Google Patents

Spectral element

Info

Publication number
JPS6480908A
JPS6480908A JP23952487A JP23952487A JPS6480908A JP S6480908 A JPS6480908 A JP S6480908A JP 23952487 A JP23952487 A JP 23952487A JP 23952487 A JP23952487 A JP 23952487A JP S6480908 A JPS6480908 A JP S6480908A
Authority
JP
Japan
Prior art keywords
film thickness
sic
spectral element
obtd
films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23952487A
Other languages
Japanese (ja)
Inventor
Junichi Fujita
Atsushi Kamijo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP23952487A priority Critical patent/JPS6480908A/en
Publication of JPS6480908A publication Critical patent/JPS6480908A/en
Pending legal-status Critical Current

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  • Spectrometry And Color Measurement (AREA)
  • Optical Filters (AREA)

Abstract

PURPOSE:To obtain a spectral element which has high strength and adequate resolving power and does not require intricate optical systems by alternately laminating silicon carbide and carbon of specific film thicknesses at specified film thickness ratios, thereby providing periodic structures to the element. CONSTITUTION:The films of the silicon carbide (SiC) 2 and the carbon (C) 3 are alternately laminated on a substrate 1 respectively at >=1atom. and <=400Angstrom film thickness in such a manner that the film thickness ratio of the SiC 2 and the C 3 attains 0.1-10 to provide the periodic structures to the films. At least the film thickness of one atom layer is necessary for the film thicknesses of the SiC 2 and C 3 layers. The min. film thickness is limited to 2Angstrom and the max. required film thickness to 1,000Angstrom as the limit at which the interference effect to rays of <=500Angstrom wavelength is obtainable. Furthermore, the effective reflectivity is not obtd. if the film thickness ratio exceeds 0.1-10. The spectral element which has the high strength and the adequate resolving power and does not require the intricate optical systems is thereby obtd.
JP23952487A 1987-09-22 1987-09-22 Spectral element Pending JPS6480908A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23952487A JPS6480908A (en) 1987-09-22 1987-09-22 Spectral element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23952487A JPS6480908A (en) 1987-09-22 1987-09-22 Spectral element

Publications (1)

Publication Number Publication Date
JPS6480908A true JPS6480908A (en) 1989-03-27

Family

ID=17046082

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23952487A Pending JPS6480908A (en) 1987-09-22 1987-09-22 Spectral element

Country Status (1)

Country Link
JP (1) JPS6480908A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05164613A (en) * 1991-12-16 1993-06-29 Shin Etsu Handotai Co Ltd Fourier-transformation infrared spectroscopic measuring method
US6262830B1 (en) 1997-09-16 2001-07-17 Michael Scalora Transparent metallo-dielectric photonic band gap structure
US6304366B1 (en) 1998-04-02 2001-10-16 Michael Scalora Photonic signal frequency conversion using a photonic band gap structure
US6339493B1 (en) 1999-12-23 2002-01-15 Michael Scalora Apparatus and method for controlling optics propagation based on a transparent metal stack
US6343167B1 (en) 1997-10-24 2002-01-29 Michael Scalora Photonic band gap device and method using a periodicity defect region to increase photonic signal delay
US6396617B1 (en) 1999-05-17 2002-05-28 Michael Scalora Photonic band gap device and method using a periodicity defect region doped with a gain medium to increase photonic signal delay
US6414780B1 (en) 1999-12-23 2002-07-02 D'aguanno Giuseppe Photonic signal reflectivity and transmissivity control using a photonic band gap structure
US6538794B1 (en) 1999-09-30 2003-03-25 D'aguanno Giuseppe Efficient non-linear phase shifting using a photonic band gap structure

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05164613A (en) * 1991-12-16 1993-06-29 Shin Etsu Handotai Co Ltd Fourier-transformation infrared spectroscopic measuring method
US6262830B1 (en) 1997-09-16 2001-07-17 Michael Scalora Transparent metallo-dielectric photonic band gap structure
US6343167B1 (en) 1997-10-24 2002-01-29 Michael Scalora Photonic band gap device and method using a periodicity defect region to increase photonic signal delay
US6304366B1 (en) 1998-04-02 2001-10-16 Michael Scalora Photonic signal frequency conversion using a photonic band gap structure
US6396617B1 (en) 1999-05-17 2002-05-28 Michael Scalora Photonic band gap device and method using a periodicity defect region doped with a gain medium to increase photonic signal delay
US6538794B1 (en) 1999-09-30 2003-03-25 D'aguanno Giuseppe Efficient non-linear phase shifting using a photonic band gap structure
US6339493B1 (en) 1999-12-23 2002-01-15 Michael Scalora Apparatus and method for controlling optics propagation based on a transparent metal stack
US6414780B1 (en) 1999-12-23 2002-07-02 D'aguanno Giuseppe Photonic signal reflectivity and transmissivity control using a photonic band gap structure

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