JPS6480077A - Conductivity-modulation mosfet - Google Patents

Conductivity-modulation mosfet

Info

Publication number
JPS6480077A
JPS6480077A JP23487987A JP23487987A JPS6480077A JP S6480077 A JPS6480077 A JP S6480077A JP 23487987 A JP23487987 A JP 23487987A JP 23487987 A JP23487987 A JP 23487987A JP S6480077 A JPS6480077 A JP S6480077A
Authority
JP
Japan
Prior art keywords
regions
region
running
conductivity
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23487987A
Other languages
Japanese (ja)
Inventor
Koichi Murakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Motor Co Ltd
Original Assignee
Nissan Motor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Motor Co Ltd filed Critical Nissan Motor Co Ltd
Priority to JP23487987A priority Critical patent/JPS6480077A/en
Publication of JPS6480077A publication Critical patent/JPS6480077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To provide the title conductivity-modulation MOSFET with high resistance to latch up while decreasing the on-resistance by a method wherein p<+> and n<+> high concentration impurity regions are alternately formed below a low concentration anode region of the title MOSFET to form new current routes. CONSTITUTION:N<+> substrate regions 1 and p<+> substrate regions 2 are alternately formed in specified pitches below a p region 3. Thus, the route of electrons running from a source to an n base region 4 to be a drain through a MOS transistor is divided into two parts. One is running from the n base region 4 and an n<+> buffer region 13 to the regions 2 through the regions 3 while the other is running from the region 4 and the region 13 to the regions 1 through the region 3. Consequently, without increasing the hole injection for the conductivity modulation, the quantity of electrons running through the junction of the substrate regions 1, 2 and the regions 3 and 13 formed on the substrate regions 1, 2 can be increased while decreasing the on-resistance.
JP23487987A 1987-09-21 1987-09-21 Conductivity-modulation mosfet Pending JPS6480077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23487987A JPS6480077A (en) 1987-09-21 1987-09-21 Conductivity-modulation mosfet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23487987A JPS6480077A (en) 1987-09-21 1987-09-21 Conductivity-modulation mosfet

Publications (1)

Publication Number Publication Date
JPS6480077A true JPS6480077A (en) 1989-03-24

Family

ID=16977754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23487987A Pending JPS6480077A (en) 1987-09-21 1987-09-21 Conductivity-modulation mosfet

Country Status (1)

Country Link
JP (1) JPS6480077A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03204976A (en) * 1989-10-20 1991-09-06 Fuji Electric Co Ltd Semiconductor device
DE4114349A1 (en) * 1990-05-10 1991-11-14 Fuji Electric Co Ltd Bipolar transistor with insulated gate - has drain zone with inset zone of high impregnation concn.
JPH0472669A (en) * 1990-05-10 1992-03-06 Fuji Electric Co Ltd Insulated-gate bipolar transistor
EP0485059A2 (en) * 1990-09-28 1992-05-13 Kabushiki Kaisha Toshiba Semiconductor device including a pin-diode having high breakdown voltage
US5141889A (en) * 1990-11-30 1992-08-25 Motorola, Inc. Method of making enhanced insulated gate bipolar transistor
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
EP0578973A1 (en) * 1992-06-12 1994-01-19 Kabushiki Kaisha Toshiba Method of forming short-circuiting regions for insulated gate semiconductor devices
US5289019A (en) * 1991-07-24 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
JP2003031809A (en) * 2001-07-17 2003-01-31 Mitsubishi Electric Corp Insulated-gate bipolar transistor

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
US5292672A (en) * 1989-09-20 1994-03-08 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing an insulated gate bipolar transistor
JPH03204976A (en) * 1989-10-20 1991-09-06 Fuji Electric Co Ltd Semiconductor device
DE4114349A1 (en) * 1990-05-10 1991-11-14 Fuji Electric Co Ltd Bipolar transistor with insulated gate - has drain zone with inset zone of high impregnation concn.
JPH0472669A (en) * 1990-05-10 1992-03-06 Fuji Electric Co Ltd Insulated-gate bipolar transistor
DE4114349C2 (en) * 1990-05-10 2001-05-31 Fuji Electric Co Ltd Insulated Gate Bipolar Transistor (IGBT)
EP0485059A2 (en) * 1990-09-28 1992-05-13 Kabushiki Kaisha Toshiba Semiconductor device including a pin-diode having high breakdown voltage
US5141889A (en) * 1990-11-30 1992-08-25 Motorola, Inc. Method of making enhanced insulated gate bipolar transistor
US5289019A (en) * 1991-07-24 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor
EP0578973A1 (en) * 1992-06-12 1994-01-19 Kabushiki Kaisha Toshiba Method of forming short-circuiting regions for insulated gate semiconductor devices
JP2003031809A (en) * 2001-07-17 2003-01-31 Mitsubishi Electric Corp Insulated-gate bipolar transistor
US7250639B1 (en) 2001-07-17 2007-07-31 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor

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