JPS6477933A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6477933A JPS6477933A JP23364887A JP23364887A JPS6477933A JP S6477933 A JPS6477933 A JP S6477933A JP 23364887 A JP23364887 A JP 23364887A JP 23364887 A JP23364887 A JP 23364887A JP S6477933 A JPS6477933 A JP S6477933A
- Authority
- JP
- Japan
- Prior art keywords
- contact
- tin
- aln
- drain
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23364887A JPS6477933A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23364887A JPS6477933A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477933A true JPS6477933A (en) | 1989-03-23 |
Family
ID=16958335
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23364887A Pending JPS6477933A (en) | 1987-09-19 | 1987-09-19 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477933A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000021129A1 (en) * | 1998-10-07 | 2000-04-13 | Tokyo Electron Arizona, Inc. | In situ titanium aluminide deposit in high aspect ratio features |
KR100414745B1 (ko) * | 1996-12-31 | 2004-03-30 | 주식회사 하이닉스반도체 | 반도체소자의금속배선형성방법 |
-
1987
- 1987-09-19 JP JP23364887A patent/JPS6477933A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100414745B1 (ko) * | 1996-12-31 | 2004-03-30 | 주식회사 하이닉스반도체 | 반도체소자의금속배선형성방법 |
WO2000021129A1 (en) * | 1998-10-07 | 2000-04-13 | Tokyo Electron Arizona, Inc. | In situ titanium aluminide deposit in high aspect ratio features |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5748246A (en) | Manufacture of semiconductor device | |
JPS6414949A (en) | Semiconductor device and manufacture of the same | |
JPS542077A (en) | Semiconductor switching element | |
GB1527894A (en) | Methods of manufacturing electronic devices | |
KR940004256B1 (en) | Making method of semiconductor device | |
GB2106419A (en) | Growth of structures based on group iv semiconductor materials | |
KR960016231B1 (en) | Semiconductor metal wire forming method | |
JPS6477933A (en) | Manufacture of semiconductor device | |
JPS5389374A (en) | Production of semiconductor device | |
JPS575328A (en) | Growing method for semiconductor crystal | |
JPS5772333A (en) | Manufacture of semiconductor device | |
JPS57196542A (en) | Semiconductor integrated circuit device and manufacture thereof | |
JPS5766672A (en) | Semiconductor device | |
JPS56162873A (en) | Insulated gate type field effect semiconductor device | |
JPS56146253A (en) | Semiconductor device | |
EP0243850A3 (en) | Selective epitaxial layer field oxide (sel-fox) isolation | |
JPS5467372A (en) | Production of semiconductor device | |
JPS5325355A (en) | Production of semiconductor device | |
JPS57193063A (en) | Manufacture of semiconductor device | |
JPS57190331A (en) | Semiconductor device and manufacture thereof | |
JPS55138856A (en) | Method of fabricating semiconductor device | |
JPS6453467A (en) | Formation of miniaturized pattern | |
JPS57206071A (en) | Semiconductor device and manufacture thereof | |
JPS6459858A (en) | Manufacture of semiconductor device | |
JPS57128027A (en) | Manufacture of semiconductor device |