JPS647663A - Insulated gate field-effect transistor - Google Patents
Insulated gate field-effect transistorInfo
- Publication number
- JPS647663A JPS647663A JP16343387A JP16343387A JPS647663A JP S647663 A JPS647663 A JP S647663A JP 16343387 A JP16343387 A JP 16343387A JP 16343387 A JP16343387 A JP 16343387A JP S647663 A JPS647663 A JP S647663A
- Authority
- JP
- Japan
- Prior art keywords
- protruding part
- columnar protruding
- drain
- source
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16343387A JPS647663A (en) | 1987-06-30 | 1987-06-30 | Insulated gate field-effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16343387A JPS647663A (en) | 1987-06-30 | 1987-06-30 | Insulated gate field-effect transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS647663A true JPS647663A (en) | 1989-01-11 |
Family
ID=15773802
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16343387A Pending JPS647663A (en) | 1987-06-30 | 1987-06-30 | Insulated gate field-effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS647663A (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03232276A (ja) * | 1990-02-07 | 1991-10-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| WO1998042026A1 (de) * | 1997-03-19 | 1998-09-24 | Siemens Aktiengesellschaft | Vertikaler mos-transistor und verfahren zu dessen herstellung |
-
1987
- 1987-06-30 JP JP16343387A patent/JPS647663A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03232276A (ja) * | 1990-02-07 | 1991-10-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| WO1998042026A1 (de) * | 1997-03-19 | 1998-09-24 | Siemens Aktiengesellschaft | Vertikaler mos-transistor und verfahren zu dessen herstellung |
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