JPS647500B2 - - Google Patents

Info

Publication number
JPS647500B2
JPS647500B2 JP1860781A JP1860781A JPS647500B2 JP S647500 B2 JPS647500 B2 JP S647500B2 JP 1860781 A JP1860781 A JP 1860781A JP 1860781 A JP1860781 A JP 1860781A JP S647500 B2 JPS647500 B2 JP S647500B2
Authority
JP
Japan
Prior art keywords
whisker
crystal
electrode wiring
semiconductor device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1860781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57132342A (en
Inventor
Katsuhiro Hirata
Hideaki Itakura
Masahiro Yoneda
Kyusaku Nishioka
Haruhiko Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP1860781A priority Critical patent/JPS57132342A/ja
Publication of JPS57132342A publication Critical patent/JPS57132342A/ja
Publication of JPS647500B2 publication Critical patent/JPS647500B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP1860781A 1981-02-10 1981-02-10 Manufacture of semiconductor device Granted JPS57132342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1860781A JPS57132342A (en) 1981-02-10 1981-02-10 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1860781A JPS57132342A (en) 1981-02-10 1981-02-10 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS57132342A JPS57132342A (en) 1982-08-16
JPS647500B2 true JPS647500B2 (enExample) 1989-02-09

Family

ID=11976321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1860781A Granted JPS57132342A (en) 1981-02-10 1981-02-10 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57132342A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4835778A (enExample) * 1971-09-09 1973-05-26
JPS583377B2 (ja) * 1974-09-21 1983-01-21 三菱電機株式会社 ハンドウタイソウチ ノ セイゾウホウホウ

Also Published As

Publication number Publication date
JPS57132342A (en) 1982-08-16

Similar Documents

Publication Publication Date Title
JPS6281709A (ja) 半導体装置の製造方法
JPS584924A (ja) 半導体装置の電極形成方法
US4748491A (en) Redundant circuit of semiconductor device and method of producing same
JPH04229616A (ja) 半導体層構造に開口を製造する方法
KR900001652B1 (ko) 반도체 장치 및 그 제조방법
JPS58116764A (ja) 半導体装置の製造方法
JPS647500B2 (enExample)
JPH07105338B2 (ja) 半導体装置の製造方法
JPH0114709B2 (enExample)
JPS58115835A (ja) 半導体装置の埋込配線形成方法
JPS6262056B2 (enExample)
JP2525668B2 (ja) 電極取り出し部の構成方法
JPH02271632A (ja) 半導体装置
JPH03250620A (ja) 半導体装置の製造方法
JPS6248897B2 (enExample)
JPH04236450A (ja) 半導体装置の製造方法
JPS59194452A (ja) 半導体集積回路装置の製造方法
JPS60193342A (ja) 半導体装置の製造方法
JPS6132421A (ja) 半導体装置の製造方法
JPH04288834A (ja) 半導体装置の製造方法
JPS6138852B2 (enExample)
JPS6380550A (ja) 半導体装置の配線前駆体
JPS5919311A (ja) 半導体装置の製造方法
JPS6143855B2 (enExample)
JPH06188243A (ja) 半導体装置及びその製造方法