JPS6474776A - Manufacture of superconducting wiring substrate - Google Patents
Manufacture of superconducting wiring substrateInfo
- Publication number
- JPS6474776A JPS6474776A JP62230923A JP23092387A JPS6474776A JP S6474776 A JPS6474776 A JP S6474776A JP 62230923 A JP62230923 A JP 62230923A JP 23092387 A JP23092387 A JP 23092387A JP S6474776 A JPS6474776 A JP S6474776A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film
- onto
- superconductive
- al2o3
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 229910052593 corundum Inorganic materials 0.000 abstract 3
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 3
- 229910002651 NO3 Inorganic materials 0.000 abstract 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 2
- 229910052727 yttrium Inorganic materials 0.000 abstract 2
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- 229910052692 Dysprosium Inorganic materials 0.000 abstract 1
- 229910052691 Erbium Inorganic materials 0.000 abstract 1
- 229910052693 Europium Inorganic materials 0.000 abstract 1
- 229910052688 Gadolinium Inorganic materials 0.000 abstract 1
- 229910052689 Holmium Inorganic materials 0.000 abstract 1
- 229910052765 Lutetium Inorganic materials 0.000 abstract 1
- 229910052779 Neodymium Inorganic materials 0.000 abstract 1
- 229910052777 Praseodymium Inorganic materials 0.000 abstract 1
- 229910052772 Samarium Inorganic materials 0.000 abstract 1
- 229910052771 Terbium Inorganic materials 0.000 abstract 1
- 229910052775 Thulium Inorganic materials 0.000 abstract 1
- 229910052769 Ytterbium Inorganic materials 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000010884 ion-beam technique Methods 0.000 abstract 1
- 229910052746 lanthanum Inorganic materials 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49888—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing superconducting material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0884—Treatment of superconductor layers by irradiation, e.g. ion-beam, electron-beam, laser beam or X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To form a fine pattern by forming an A-B-Cu-O superconductive film (A represents Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or Sc and B Ba, Sr or Ca) onto an insulating substrate, implanting A to sections except a section to be left as a wiring in a superconductive film and insulating the sections. CONSTITUTION:An Al2O3 substrate 1 having high purity is used as an insulator substrate, and Y and Ba and Cu are mixed sufficiently to the type of a nitrate solution. A composition ratio at that time is brought to Y:Ba:Cu=1:2:3. The nitrate solution is scattered onto the Al2O3 substrate 1, and thermally treated at 950 deg.C, thus acquiring a superconductive thin-film 2. Masks 3 are shaped onto the thin-film 2, and the ion beams of Y are applied and Y is doped until Y is brought to treble or more to Ba. A defect due to Y incidence is removed through annealing at 500 deg.C. Accordingly, a superconducting wiring 5 insulated by insulators 4 having excess Y can be formed onto the Al2O3 substrate 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62230923A JPS6474776A (en) | 1987-09-17 | 1987-09-17 | Manufacture of superconducting wiring substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62230923A JPS6474776A (en) | 1987-09-17 | 1987-09-17 | Manufacture of superconducting wiring substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6474776A true JPS6474776A (en) | 1989-03-20 |
Family
ID=16915398
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62230923A Pending JPS6474776A (en) | 1987-09-17 | 1987-09-17 | Manufacture of superconducting wiring substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6474776A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4814978A (en) * | 1986-07-15 | 1989-03-21 | Dataflow Computer Corporation | Dataflow processing element, multiprocessor, and processes |
| US5127104A (en) * | 1986-12-29 | 1992-06-30 | Dataflow Computer Corporation | Method and product involving translation and execution of programs by automatic partitioning and data structure allocation |
-
1987
- 1987-09-17 JP JP62230923A patent/JPS6474776A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4814978A (en) * | 1986-07-15 | 1989-03-21 | Dataflow Computer Corporation | Dataflow processing element, multiprocessor, and processes |
| US5127104A (en) * | 1986-12-29 | 1992-06-30 | Dataflow Computer Corporation | Method and product involving translation and execution of programs by automatic partitioning and data structure allocation |
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