JPS6473316A - Liquid crystal device - Google Patents

Liquid crystal device

Info

Publication number
JPS6473316A
JPS6473316A JP22837287A JP22837287A JPS6473316A JP S6473316 A JPS6473316 A JP S6473316A JP 22837287 A JP22837287 A JP 22837287A JP 22837287 A JP22837287 A JP 22837287A JP S6473316 A JPS6473316 A JP S6473316A
Authority
JP
Japan
Prior art keywords
panel
substrate
temperature
liquid crystal
transparent electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22837287A
Other languages
Japanese (ja)
Inventor
Tadashi Mihara
Takashi Yamamoto
Hirobumi Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP22837287A priority Critical patent/JPS6473316A/en
Publication of JPS6473316A publication Critical patent/JPS6473316A/en
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)

Abstract

PURPOSE:To uniform the temperature of the panel and to reduce the influence of a temperature difference even if the temperature difference is generated nearby the panel by providing a heat conductor with high heat conductivity on the back surface of the panel. CONSTITUTION:An electrode group of transparent electrodes ITO (Indiu Thin Oxide) 102 is formed on a substrate 101 in a specific pattern and an electrode group of transparent electrodes 102' crossing the transparent electrodes 102 is formed on a substrate 101'. An orientation control film 105 formed by using an inorganic insulating material such as silicon monoxide and silicon dioxide and an organic insulating material such as polyvinyl alcohol and polyimide is provided on the substrate 101', and the orientation control film 105 is obtained by rubbing its surface against velvet, cloth, and paper in one direction after the film formation. The heat conductor 110 is formed on the back surface of the substrate 101 and ITO of 1mum in thickness formed by a sputtering method. Consequently, the temperature of the liquid crystal panel is uniformed over the entire surface of the panel and even when a light source which causes a temperature difference in the temperature distribution of the liquid crystal panel is used, high picture quality can be maintained.
JP22837287A 1987-09-14 1987-09-14 Liquid crystal device Pending JPS6473316A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22837287A JPS6473316A (en) 1987-09-14 1987-09-14 Liquid crystal device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22837287A JPS6473316A (en) 1987-09-14 1987-09-14 Liquid crystal device

Publications (1)

Publication Number Publication Date
JPS6473316A true JPS6473316A (en) 1989-03-17

Family

ID=16875431

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22837287A Pending JPS6473316A (en) 1987-09-14 1987-09-14 Liquid crystal device

Country Status (1)

Country Link
JP (1) JPS6473316A (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000033128A1 (en) * 1998-11-27 2000-06-08 Hitachi Maxell, Ltd. Liquid crystal display device and liquid crystal production method
KR100266216B1 (en) * 1997-10-15 2000-09-15 구본준; 론 위라하디락사 Structure and fabrication method for tft lcd
KR100268303B1 (en) * 1997-07-14 2000-10-16 구본준 Lcd substrate and its fabrication method
KR100271035B1 (en) * 1997-07-12 2000-11-01 구본준, 론 위라하디락사 Lcd and its fabrication method
KR100289650B1 (en) * 1998-06-29 2001-05-02 박종섭 Method of manufacturing thin film transistor liquid crystal display device
US6284558B1 (en) 1997-11-25 2001-09-04 Nec Corporation Active matrix liquid-crystal display device and method for making the same
JP2001272661A (en) * 2000-01-31 2001-10-05 Nokia Mobile Phones Ltd Method and device for stabilizing temperature for liquid crystal display
KR100356834B1 (en) * 1999-06-25 2002-10-18 주식회사 현대 디스플레이 테크놀로지 LCD having high aperture ratio and mathod for manufacturing the same
KR100328685B1 (en) * 1994-07-27 2002-11-13 삼성에스디아이 주식회사 Liquid crystal display device and fabricating method thereof
KR100349378B1 (en) * 1998-06-12 2003-06-09 주식회사 현대 디스플레이 테크놀로지 Method of forming a reflective liquid crystal display device
JP2008097014A (en) * 2003-08-05 2008-04-24 Sumitomo Electric Ind Ltd Transparent substrate for liquid crystal panel
JP2009098310A (en) * 2007-10-15 2009-05-07 Hitachi Displays Ltd Liquid crystal display device
US7741238B2 (en) 2005-03-30 2010-06-22 Sumitomo Electric Industries, Ltd. Spinel sintered body, light transmitting window and light transmitting lens
US7755738B2 (en) 2007-06-20 2010-07-13 Au Optronics Corp. Liquid crystal display having heating layer

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100328685B1 (en) * 1994-07-27 2002-11-13 삼성에스디아이 주식회사 Liquid crystal display device and fabricating method thereof
KR100271035B1 (en) * 1997-07-12 2000-11-01 구본준, 론 위라하디락사 Lcd and its fabrication method
KR100268303B1 (en) * 1997-07-14 2000-10-16 구본준 Lcd substrate and its fabrication method
KR100266216B1 (en) * 1997-10-15 2000-09-15 구본준; 론 위라하디락사 Structure and fabrication method for tft lcd
KR100329094B1 (en) * 1997-11-25 2002-10-25 닛폰 덴키(주) Active matrix liquid crystal display device and its manufacturing method
US6284558B1 (en) 1997-11-25 2001-09-04 Nec Corporation Active matrix liquid-crystal display device and method for making the same
KR100349378B1 (en) * 1998-06-12 2003-06-09 주식회사 현대 디스플레이 테크놀로지 Method of forming a reflective liquid crystal display device
KR100289650B1 (en) * 1998-06-29 2001-05-02 박종섭 Method of manufacturing thin film transistor liquid crystal display device
WO2000033128A1 (en) * 1998-11-27 2000-06-08 Hitachi Maxell, Ltd. Liquid crystal display device and liquid crystal production method
KR100356834B1 (en) * 1999-06-25 2002-10-18 주식회사 현대 디스플레이 테크놀로지 LCD having high aperture ratio and mathod for manufacturing the same
JP2001272661A (en) * 2000-01-31 2001-10-05 Nokia Mobile Phones Ltd Method and device for stabilizing temperature for liquid crystal display
JP2008097014A (en) * 2003-08-05 2008-04-24 Sumitomo Electric Ind Ltd Transparent substrate for liquid crystal panel
US7741238B2 (en) 2005-03-30 2010-06-22 Sumitomo Electric Industries, Ltd. Spinel sintered body, light transmitting window and light transmitting lens
US7755738B2 (en) 2007-06-20 2010-07-13 Au Optronics Corp. Liquid crystal display having heating layer
US7932987B2 (en) 2007-06-20 2011-04-26 Au Optronics Corp. Liquid crystal display having heating layer and method of making the same
US8314898B2 (en) 2007-06-20 2012-11-20 Au Optronics Corp. Display device having heating layer and method of making the same
JP2009098310A (en) * 2007-10-15 2009-05-07 Hitachi Displays Ltd Liquid crystal display device

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