JPS6472997A - Heat treatment of compound semiconductor single crystal - Google Patents

Heat treatment of compound semiconductor single crystal

Info

Publication number
JPS6472997A
JPS6472997A JP23150387A JP23150387A JPS6472997A JP S6472997 A JPS6472997 A JP S6472997A JP 23150387 A JP23150387 A JP 23150387A JP 23150387 A JP23150387 A JP 23150387A JP S6472997 A JPS6472997 A JP S6472997A
Authority
JP
Japan
Prior art keywords
temp
single crystal
semiconductor single
heat treatment
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23150387A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0411520B2 (enrdf_load_html_response
Inventor
Takehiko Kameyama
Junzo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eneos Corp
Original Assignee
Nippon Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Mining Co Ltd filed Critical Nippon Mining Co Ltd
Priority to JP23150387A priority Critical patent/JPS6472997A/ja
Publication of JPS6472997A publication Critical patent/JPS6472997A/ja
Publication of JPH0411520B2 publication Critical patent/JPH0411520B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP23150387A 1987-09-14 1987-09-14 Heat treatment of compound semiconductor single crystal Granted JPS6472997A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23150387A JPS6472997A (en) 1987-09-14 1987-09-14 Heat treatment of compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23150387A JPS6472997A (en) 1987-09-14 1987-09-14 Heat treatment of compound semiconductor single crystal

Publications (2)

Publication Number Publication Date
JPS6472997A true JPS6472997A (en) 1989-03-17
JPH0411520B2 JPH0411520B2 (enrdf_load_html_response) 1992-02-28

Family

ID=16924514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23150387A Granted JPS6472997A (en) 1987-09-14 1987-09-14 Heat treatment of compound semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS6472997A (enrdf_load_html_response)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190300A (ja) * 1983-04-08 1984-10-29 Hitachi Ltd 半導体製造方法および装置
JPS60210591A (ja) * 1984-04-05 1985-10-23 Hitachi Cable Ltd 半絶縁性ＧａＡｓ単結晶の製造方法
JPS62162700A (ja) * 1986-01-09 1987-07-18 Furukawa Electric Co Ltd:The 化合物半導体インゴツトの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59190300A (ja) * 1983-04-08 1984-10-29 Hitachi Ltd 半導体製造方法および装置
JPS60210591A (ja) * 1984-04-05 1985-10-23 Hitachi Cable Ltd 半絶縁性ＧａＡｓ単結晶の製造方法
JPS62162700A (ja) * 1986-01-09 1987-07-18 Furukawa Electric Co Ltd:The 化合物半導体インゴツトの製造方法

Also Published As

Publication number Publication date
JPH0411520B2 (enrdf_load_html_response) 1992-02-28

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