JPS6472996A - Method for growing magneto-optical crystal - Google Patents
Method for growing magneto-optical crystalInfo
- Publication number
- JPS6472996A JPS6472996A JP23012987A JP23012987A JPS6472996A JP S6472996 A JPS6472996 A JP S6472996A JP 23012987 A JP23012987 A JP 23012987A JP 23012987 A JP23012987 A JP 23012987A JP S6472996 A JPS6472996 A JP S6472996A
- Authority
- JP
- Japan
- Prior art keywords
- garnet
- crystal
- rare earth
- intermediate layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To produce crystal for optical isolator having good temp. characteristic in a high yield, by epitaxially growing a specified rare earth garnet crystal on a substrate by using garnet crystal having fixed thermal expansion coefft. as intermediate layer. CONSTITUTION:When the rare earth garnet crystal contg. Bi, of formula I (where, R is rare earth element and M is Al, Ga, Sc, In, Lu, etc.) is epitaxially grown on the garnet substrate, at least one or more layers are grown as follows: at least one or more layers are grown by using garnet crystal existing between the rare earth garnet contg. Bi above-mentioned and the garnet substrate, as intermediate layer. Further, when the compd. of formula II (where, 0.7<=x<=1.3 and 0<=y<=1.7) is used as intermediate layer, the crystal for optical isolator having very good temp. characteristic can be obtd., because the temp. change in Faraday rotation angle is the reverse of one of usual Bi-substitution garnet.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62230129A JP2834123B2 (en) | 1987-09-14 | 1987-09-14 | Method of growing magneto-optical crystal for optical isolator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62230129A JP2834123B2 (en) | 1987-09-14 | 1987-09-14 | Method of growing magneto-optical crystal for optical isolator |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6472996A true JPS6472996A (en) | 1989-03-17 |
JP2834123B2 JP2834123B2 (en) | 1998-12-09 |
Family
ID=16903028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62230129A Expired - Lifetime JP2834123B2 (en) | 1987-09-14 | 1987-09-14 | Method of growing magneto-optical crystal for optical isolator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2834123B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008134595A (en) * | 2006-10-30 | 2008-06-12 | Namiki Precision Jewel Co Ltd | Faraday rotator for short wavelength light and optical isolator provided with faraday rotator |
WO2022004077A1 (en) * | 2020-07-03 | 2022-01-06 | 信越化学工業株式会社 | Bismuth-substituted rare earth iron garnet single crystal film production method, faraday rotator, and optical isolator |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202914A (en) * | 1984-03-28 | 1985-10-14 | Nippon Sheet Glass Co Ltd | Garnet thin-film element and manufacture thereof |
JPS61151090A (en) * | 1984-12-24 | 1986-07-09 | Tohoku Metal Ind Ltd | Crystal growth of garnet film |
JPS61242986A (en) * | 1985-04-16 | 1986-10-29 | Matsushita Electric Ind Co Ltd | Production of magneto-optical crystal |
-
1987
- 1987-09-14 JP JP62230129A patent/JP2834123B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60202914A (en) * | 1984-03-28 | 1985-10-14 | Nippon Sheet Glass Co Ltd | Garnet thin-film element and manufacture thereof |
JPS61151090A (en) * | 1984-12-24 | 1986-07-09 | Tohoku Metal Ind Ltd | Crystal growth of garnet film |
JPS61242986A (en) * | 1985-04-16 | 1986-10-29 | Matsushita Electric Ind Co Ltd | Production of magneto-optical crystal |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008134595A (en) * | 2006-10-30 | 2008-06-12 | Namiki Precision Jewel Co Ltd | Faraday rotator for short wavelength light and optical isolator provided with faraday rotator |
WO2022004077A1 (en) * | 2020-07-03 | 2022-01-06 | 信越化学工業株式会社 | Bismuth-substituted rare earth iron garnet single crystal film production method, faraday rotator, and optical isolator |
Also Published As
Publication number | Publication date |
---|---|
JP2834123B2 (en) | 1998-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA2163154A1 (en) | Glazing with at least one thin layer and process for obtaining same | |
JPS5659699A (en) | Gallium nitride growing method | |
US4712855A (en) | Planar optical waveguide and method of manufacturing same | |
JPS6472996A (en) | Method for growing magneto-optical crystal | |
EP0330500B1 (en) | Magneto-optic garnet | |
EP0203578A3 (en) | Semiconductor device having epitaxial insulating film and method of producing the same | |
JPS57128092A (en) | Imbedded type semiconductor laser device | |
JPH08290998A (en) | Bismuth-substituted rare earth metal iron garnet single crystal | |
JPH08290997A (en) | Bismuth-substituted rare earth metal iron garnet single crystal | |
GB1439346A (en) | Method of growing crystalline layers | |
JP2874320B2 (en) | Magneto-optical material, method of manufacturing the same, and optical element using the same | |
JPS56118329A (en) | Vapor phase epitaxial growth method for compound semiconductor monocrystalling thin film | |
KR890005825A (en) | Dendrite Web Silicon Crystal Growth Method | |
JPS6445113A (en) | Semiconductor superlattice structure | |
JPS5435898A (en) | Growing method for rare earth element gallium garnet single crystal | |
JPH0774118B2 (en) | Method for manufacturing magneto-optical element | |
Kniep et al. | Phase relations in Ga sub (2) X sub (3)-GaY sub (3) systems(X= Se, Te; Y= Cl, Br, I)- crystal growth, structural relations and optical absorption of intermediate compounds GaXY. | |
JPS5756922A (en) | Epitaxially growing method | |
JPS574022A (en) | Waveguide type magnetooptic fiber optics element | |
GELLER | Single crystals of yttrium and rare earth gallium perovskites for use as substrates for bubble domain iron perovskites[Final Report] | |
SU948171A1 (en) | Scintillator based on stilbene monocrystal and method of manufacturing thereof | |
TW270215B (en) | Liquid phase extension growing process | |
JPS57162346A (en) | Manufacutre of insulating and isolating substrate | |
JPS5645895A (en) | Growing method of garnet liquid phase epitaxial film | |
JPS5694610A (en) | Liquid-phase epitaxial film of (110) garnet |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |