JPS6472996A - Method for growing magneto-optical crystal - Google Patents

Method for growing magneto-optical crystal

Info

Publication number
JPS6472996A
JPS6472996A JP23012987A JP23012987A JPS6472996A JP S6472996 A JPS6472996 A JP S6472996A JP 23012987 A JP23012987 A JP 23012987A JP 23012987 A JP23012987 A JP 23012987A JP S6472996 A JPS6472996 A JP S6472996A
Authority
JP
Japan
Prior art keywords
garnet
crystal
rare earth
intermediate layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23012987A
Other languages
Japanese (ja)
Other versions
JP2834123B2 (en
Inventor
Takashi Minemoto
Kaoru Matsuda
Osamu Kamata
Satoshi Ishizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62230129A priority Critical patent/JP2834123B2/en
Publication of JPS6472996A publication Critical patent/JPS6472996A/en
Application granted granted Critical
Publication of JP2834123B2 publication Critical patent/JP2834123B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To produce crystal for optical isolator having good temp. characteristic in a high yield, by epitaxially growing a specified rare earth garnet crystal on a substrate by using garnet crystal having fixed thermal expansion coefft. as intermediate layer. CONSTITUTION:When the rare earth garnet crystal contg. Bi, of formula I (where, R is rare earth element and M is Al, Ga, Sc, In, Lu, etc.) is epitaxially grown on the garnet substrate, at least one or more layers are grown as follows: at least one or more layers are grown by using garnet crystal existing between the rare earth garnet contg. Bi above-mentioned and the garnet substrate, as intermediate layer. Further, when the compd. of formula II (where, 0.7<=x<=1.3 and 0<=y<=1.7) is used as intermediate layer, the crystal for optical isolator having very good temp. characteristic can be obtd., because the temp. change in Faraday rotation angle is the reverse of one of usual Bi-substitution garnet.
JP62230129A 1987-09-14 1987-09-14 Method of growing magneto-optical crystal for optical isolator Expired - Lifetime JP2834123B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62230129A JP2834123B2 (en) 1987-09-14 1987-09-14 Method of growing magneto-optical crystal for optical isolator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62230129A JP2834123B2 (en) 1987-09-14 1987-09-14 Method of growing magneto-optical crystal for optical isolator

Publications (2)

Publication Number Publication Date
JPS6472996A true JPS6472996A (en) 1989-03-17
JP2834123B2 JP2834123B2 (en) 1998-12-09

Family

ID=16903028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62230129A Expired - Lifetime JP2834123B2 (en) 1987-09-14 1987-09-14 Method of growing magneto-optical crystal for optical isolator

Country Status (1)

Country Link
JP (1) JP2834123B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008134595A (en) * 2006-10-30 2008-06-12 Namiki Precision Jewel Co Ltd Faraday rotator for short wavelength light and optical isolator provided with faraday rotator
WO2022004077A1 (en) * 2020-07-03 2022-01-06 信越化学工業株式会社 Bismuth-substituted rare earth iron garnet single crystal film production method, faraday rotator, and optical isolator

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202914A (en) * 1984-03-28 1985-10-14 Nippon Sheet Glass Co Ltd Garnet thin-film element and manufacture thereof
JPS61151090A (en) * 1984-12-24 1986-07-09 Tohoku Metal Ind Ltd Crystal growth of garnet film
JPS61242986A (en) * 1985-04-16 1986-10-29 Matsushita Electric Ind Co Ltd Production of magneto-optical crystal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60202914A (en) * 1984-03-28 1985-10-14 Nippon Sheet Glass Co Ltd Garnet thin-film element and manufacture thereof
JPS61151090A (en) * 1984-12-24 1986-07-09 Tohoku Metal Ind Ltd Crystal growth of garnet film
JPS61242986A (en) * 1985-04-16 1986-10-29 Matsushita Electric Ind Co Ltd Production of magneto-optical crystal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008134595A (en) * 2006-10-30 2008-06-12 Namiki Precision Jewel Co Ltd Faraday rotator for short wavelength light and optical isolator provided with faraday rotator
WO2022004077A1 (en) * 2020-07-03 2022-01-06 信越化学工業株式会社 Bismuth-substituted rare earth iron garnet single crystal film production method, faraday rotator, and optical isolator

Also Published As

Publication number Publication date
JP2834123B2 (en) 1998-12-09

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Legal Events

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EXPY Cancellation because of completion of term