JPS5645895A - Growing method of garnet liquid phase epitaxial film - Google Patents

Growing method of garnet liquid phase epitaxial film

Info

Publication number
JPS5645895A
JPS5645895A JP12286179A JP12286179A JPS5645895A JP S5645895 A JPS5645895 A JP S5645895A JP 12286179 A JP12286179 A JP 12286179A JP 12286179 A JP12286179 A JP 12286179A JP S5645895 A JPS5645895 A JP S5645895A
Authority
JP
Japan
Prior art keywords
epitaxial film
garnet
phase epitaxial
liquid phase
growing method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12286179A
Other languages
Japanese (ja)
Inventor
Taketoshi Hibiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12286179A priority Critical patent/JPS5645895A/en
Publication of JPS5645895A publication Critical patent/JPS5645895A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE: To obtain a garnet liq. phase epitaxial film whose magnetic domain is visually observed in an easy way by growing a specified garnet liq. phase epitaxial film onto a nonmagnetic garnet substrate at a specified temp.
CONSTITUTION: A garnet liq. phase epitaxial film represented by the formula (where Ln is one or more among Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is Ge and/or Si; B is Al and/or Ga; 0.15≤x≤0.6; 0.02≤y ≤1.0; and 0≤z≤0.8) is grown onto a nonmagnetic garnet substrate at ≤925°C.
COPYRIGHT: (C)1981,JPO&Japio
JP12286179A 1979-09-25 1979-09-25 Growing method of garnet liquid phase epitaxial film Pending JPS5645895A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12286179A JPS5645895A (en) 1979-09-25 1979-09-25 Growing method of garnet liquid phase epitaxial film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12286179A JPS5645895A (en) 1979-09-25 1979-09-25 Growing method of garnet liquid phase epitaxial film

Publications (1)

Publication Number Publication Date
JPS5645895A true JPS5645895A (en) 1981-04-25

Family

ID=14846442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12286179A Pending JPS5645895A (en) 1979-09-25 1979-09-25 Growing method of garnet liquid phase epitaxial film

Country Status (1)

Country Link
JP (1) JPS5645895A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62288199A (en) * 1986-06-09 1987-12-15 Sumitomo Metal Mining Co Ltd Material for magneto-optical element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62288199A (en) * 1986-06-09 1987-12-15 Sumitomo Metal Mining Co Ltd Material for magneto-optical element
JPH0375516B2 (en) * 1986-06-09 1991-12-02 Sumitomo Metal Mining Co

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