GB1367122A - Method for producing bubble domains in magnetic film-substrate structures - Google Patents
Method for producing bubble domains in magnetic film-substrate structuresInfo
- Publication number
- GB1367122A GB1367122A GB5945571A GB5945571A GB1367122A GB 1367122 A GB1367122 A GB 1367122A GB 5945571 A GB5945571 A GB 5945571A GB 5945571 A GB5945571 A GB 5945571A GB 1367122 A GB1367122 A GB 1367122A
- Authority
- GB
- United Kingdom
- Prior art keywords
- film
- gallium garnet
- substrate
- garnet
- magnetic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000002223 garnet Substances 0.000 abstract 6
- 229910052733 gallium Inorganic materials 0.000 abstract 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 3
- 229910052772 Samarium Inorganic materials 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 abstract 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052771 Terbium Inorganic materials 0.000 abstract 1
- MDPBAVVOGPXYKN-UHFFFAOYSA-N [Y].[Gd] Chemical compound [Y].[Gd] MDPBAVVOGPXYKN-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- YPQJNRBYXDIMRN-UHFFFAOYSA-N dysprosium gallium Chemical compound [Ga].[Dy] YPQJNRBYXDIMRN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 1
- JSUSQWYDLONJAX-UHFFFAOYSA-N iron terbium Chemical compound [Fe].[Tb] JSUSQWYDLONJAX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 150000002910 rare earth metals Chemical class 0.000 abstract 1
- 229910052706 scandium Inorganic materials 0.000 abstract 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- 229910052720 vanadium Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/24—Garnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/20—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/24—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
- H01F41/28—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Magnetic Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1367122 Garnets ROCKWELL INTERNATIONAL CORP 21 Dec 1971 [28 Dec 1970] 59455/71 Headings C1A and C1J A bubble domain-containing, film substrate structure is made by depositing on a substrate a magnetic film of a single crystal material having a positive magneto-striction constant along a crystallographic axis oriented approximately normal to the plane of the film, in which the magnetic film has a lattice constant which exceeds the lattice constant of the substrate by an amount less than 0À035 at room temperature, and in which the coefficient of thermal expansion of the substrate does not differ from that of the film by an amount exceeding 1 x 10<-6>/ C. Preferably a terbium iron garnet Tb3F35O12 film is coated on to a samarium gallium garnet substrate by vapour deposition. Other substrates referred to are mixed yttrium gadolinium gallium garnet, gadolinium gallium garnet, aluminium substituted gadolinium gallium garnet, terbium gallium garnet, samarium gallium garnet and dysprosium gallium garnet. The film to be deposited on such substrates is a single crystal of formula J3Q5O12 in which J is a rare earth metal, Q is Fe, Al, Ga, In, Sc, Ti, V Cr or Mn.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10178570A | 1970-12-28 | 1970-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1367122A true GB1367122A (en) | 1974-09-18 |
Family
ID=22286400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5945571A Expired GB1367122A (en) | 1970-12-28 | 1971-12-21 | Method for producing bubble domains in magnetic film-substrate structures |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3745046A (en) |
| JP (1) | JPS5115594B1 (en) |
| CA (1) | CA953619A (en) |
| DE (2) | DE2165298A1 (en) |
| FR (1) | FR2121044A5 (en) |
| GB (1) | GB1367122A (en) |
| NL (1) | NL7115118A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3946372A (en) * | 1974-04-15 | 1976-03-23 | Rockwell International Corporation | Characteristic temperature-derived hard bubble suppression |
| JPS57922U (en) * | 1980-05-30 | 1982-01-06 | ||
| NL8004201A (en) | 1980-07-22 | 1982-02-16 | Philips Nv | Apparatus for the advancement of magnetic domains. |
| JPS5932289A (en) * | 1982-08-17 | 1984-02-21 | Kyowa Seisakusho:Kk | Remote controller using piezoelectric elenent as transmitter |
| JPS61222109A (en) * | 1985-03-27 | 1986-10-02 | Nippon Sheet Glass Co Ltd | Manufacture of rare earth iron garner film |
-
1970
- 1970-12-28 US US00101785A patent/US3745046A/en not_active Expired - Lifetime
-
1971
- 1971-10-04 CA CA124,646A patent/CA953619A/en not_active Expired
- 1971-11-03 NL NL7115118A patent/NL7115118A/xx active Search and Examination
- 1971-12-04 JP JP46098205A patent/JPS5115594B1/ja active Pending
- 1971-12-21 GB GB5945571A patent/GB1367122A/en not_active Expired
- 1971-12-23 DE DE19712165298 patent/DE2165298A1/en active Granted
- 1971-12-23 DE DE2165298A patent/DE2165298C3/en not_active Expired
- 1971-12-28 FR FR7147178A patent/FR2121044A5/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA953619A (en) | 1974-08-27 |
| DE2165298B2 (en) | 1974-08-15 |
| US3745046A (en) | 1973-07-10 |
| DE2165298A1 (en) | 1972-07-06 |
| JPS5115594B1 (en) | 1976-05-18 |
| DE2165298C3 (en) | 1975-04-17 |
| FR2121044A5 (en) | 1972-08-18 |
| NL7115118A (en) | 1972-06-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Gilleo et al. | Magnetic and crystallographic properties of substituted yttrium-iron garnet, 3 Y 2 O 3· x M 2 O 3·(5− x) Fe 2 O 3 | |
| Mimura et al. | Magnetic properties of amorphous Tb‐Fe thin films prepared by rf sputtering | |
| US4429052A (en) | Magnetic hexagonal ferrite layer on a nonmagnetic hexagonal mixed crystal substrate | |
| GB2023569A (en) | Temperaturestabilized low-loss ferrite films | |
| GB1137950A (en) | Epitaxial garnet and process for producing | |
| GB1366146A (en) | Magnetic storage devices | |
| GB1367122A (en) | Method for producing bubble domains in magnetic film-substrate structures | |
| EP0330500B1 (en) | Magneto-optic garnet | |
| GB1367123A (en) | Method for producing bubble domains in magnetic film-substrate structures | |
| Giess et al. | Europium‐yttrium iron‐gallium garnet films grown by liquid phase epitaxy on gadolinium gallium garnet | |
| US4435484A (en) | Device for propagating magnetic domains | |
| GB1367121A (en) | Method for producing bubble domains in magnetic film-substrate struc tures | |
| Goml et al. | Sputtered Iron Garner Fills for Magneto-Optical Storage | |
| US5466388A (en) | Material for magnetostatic-wave devices | |
| Kamprath et al. | Magnetic properties of Sm‐Fe‐Ti‐Al sputtered films with iHc greater than 30 kOe | |
| US4001793A (en) | Magnetic bubble domain composite with hard bubble suppression | |
| GB1367125A (en) | Confinement of bubble domains in film-substrate structures | |
| Wanklyn et al. | Growth and perfection of rare earth aluminate and DyFeO3 crystals with MoO3 as additive | |
| JPS56155515A (en) | Magnetic garnet film and manufacture | |
| US4547276A (en) | Method of directly crystallizing a (Sm+Ti):Fe=1:5 compound | |
| Bonner et al. | Characteristics of epitaxial Y3− 2xEuxTmxGayFe5-yO12 films for magnetic bubble applications | |
| GB1353485A (en) | Multiple layer crystal structures | |
| JPH0588126A (en) | Magneto-optical material, its production, and optical element using same | |
| JP2794673B2 (en) | Oxide garnet single crystal magnetic film and method of manufacturing the same | |
| US4273610A (en) | Method for controlling the resonance frequency of yttrium iron garnet films |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |