SU948171A1 - Scintillator based on stilbene monocrystal and method of manufacturing thereof - Google Patents

Scintillator based on stilbene monocrystal and method of manufacturing thereof

Info

Publication number
SU948171A1
SU948171A1 SU3230369/26A SU3230369A SU948171A1 SU 948171 A1 SU948171 A1 SU 948171A1 SU 3230369/26 A SU3230369/26 A SU 3230369/26A SU 3230369 A SU3230369 A SU 3230369A SU 948171 A1 SU948171 A1 SU 948171A1
Authority
SU
USSR - Soviet Union
Prior art keywords
stilbene
monocrystal
manufacturing
scintillator based
chloranil
Prior art date
Application number
SU3230369/26A
Other languages
Russian (ru)
Inventor
С.В. Будаковский
И.П. Крайнов
Т.Р. Мнацаканова
В.Ф. Ткаченко
Original Assignee
С.В. Будаковский
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by С.В. Будаковский filed Critical С.В. Будаковский
Priority to SU3230369/26A priority Critical patent/SU948171A1/en
Application granted granted Critical
Publication of SU948171A1 publication Critical patent/SU948171A1/en

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Measurement Of Radiation (AREA)

Abstract

FIELD: crystal growing. SUBSTANCE: scintillator is distinguished by containing 0.002-0.012 mol % of chloranil and is manufactured by directed crystallization of stilbene melt containing 0.05 to 0.3 mol % of chloranil on oriented inoculum. EFFECT: increased thermal and mechanical strength and improved structural perfection.
SU3230369/26A 1981-01-04 1981-01-04 Scintillator based on stilbene monocrystal and method of manufacturing thereof SU948171A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU3230369/26A SU948171A1 (en) 1981-01-04 1981-01-04 Scintillator based on stilbene monocrystal and method of manufacturing thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU3230369/26A SU948171A1 (en) 1981-01-04 1981-01-04 Scintillator based on stilbene monocrystal and method of manufacturing thereof

Publications (1)

Publication Number Publication Date
SU948171A1 true SU948171A1 (en) 1998-05-20

Family

ID=60525496

Family Applications (1)

Application Number Title Priority Date Filing Date
SU3230369/26A SU948171A1 (en) 1981-01-04 1981-01-04 Scintillator based on stilbene monocrystal and method of manufacturing thereof

Country Status (1)

Country Link
SU (1) SU948171A1 (en)

Similar Documents

Publication Publication Date Title
JPS56114895A (en) Manufacture of high purity single crystal by czochralski crucible pullinggup method
JPS5261180A (en) Horizontal growth of crystal ribbons
ZA757846B (en) Novel silicon crystals and method of producing same
BE858042A (en) COMPOSITION FOR THE AMENDMENT OF GROWING SUBSTRATES
UA7080A1 (en) Method for producing crystalline thoracemide
SE8302850D0 (en) STANDARD PREPARATION OF A MULTIPLE CRYSTAL FORM
DE3377874D1 (en) Method of growing silicon crystals by the czochralski method
JPS54163672A (en) Method of growing semiconductor compound monocrystal
DE3466416D1 (en) Fabrication of single crystal fibers from congruently melting polycrystalline fibers
SU948171A1 (en) Scintillator based on stilbene monocrystal and method of manufacturing thereof
FR2284367A1 (en) PROCESS FOR OBTAINING SINGLE CRYSTALS OF CADMIUM DOPED TELLURIDE
JPS569297A (en) Single crystal ternary semiconductor compound and its manufacture
GB8530093D0 (en) Growth of semiconductor crystals
GB1303309A (en)
JPS569298A (en) Method of growing silicon crystal
JPS57140737A (en) Colorless liquid crystal substance, colorless liquid crystal composition, and display element of liquid crystal
SU882247A1 (en) METHOD OF GROWING MONOCRYSTALLINE SiC
GB909230A (en) Improvements in or relating to the etching of single crystals of garnet, spinels, orthoferrites and corundum
DE3463364D1 (en) Process for the preparation of high purity alpha-mercuric iodide for use as a source of starting material for the growth of monocrystals for nuclear detection
JPS53113780A (en) Method of manufacturing silicon monocrystal containing little impurities
JPS5532717A (en) Jewelly material
JPS5571698A (en) Production of gadolinium gallium garnet single crystal
SU1461046A1 (en) Method of germanium crystal preparing
JPS6472996A (en) Method for growing magneto-optical crystal
JPS55140792A (en) Manufacture of 3-5 group compound semiconductor single crystal