JPS6467910A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6467910A JPS6467910A JP22504887A JP22504887A JPS6467910A JP S6467910 A JPS6467910 A JP S6467910A JP 22504887 A JP22504887 A JP 22504887A JP 22504887 A JP22504887 A JP 22504887A JP S6467910 A JPS6467910 A JP S6467910A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- oxide film
- diffusion
- polysilicon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To suppress diffusion of impurities completely at the rear and the side of a substrate and obtain a semiconductor device having a high productivity as well, by depositing polysilicon at a part other than the main surface of the substrate after forming an oxide film for diffusion mask on a semiconductor substrate. CONSTITUTION:A silicon oxide film 2 which forms a mask in the case of diffusion of impurites grows on a silicon substrate 1. Then polysilicon is deposited. And then only a polysilicon film 3 formed on the surface of the silicon substrate 1 is removed by anisotropic etching. Further, impurity diffusion windows 4 are formed by wet etching through photolithography. As oxide films at the rear and the side of a wafer are protected by the polysilicon film 3, they are left without being etched. Then, after removing a resist, impurity diffusion regions 5 where no deposition of the impurities and drive are performed are formed. Since its drive is performed at an oxidizing atmosphere in such a case, the silicon film 3 becomes the oxide film on the whole. Then, even though the oxide film is removed wholly so as to treat the next process, regions where impurities are diffused are merely original diffused regions and no autodoping takes place even in the heat-treatment of next process.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22504887A JPS6467910A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22504887A JPS6467910A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6467910A true JPS6467910A (en) | 1989-03-14 |
Family
ID=16823222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22504887A Pending JPS6467910A (en) | 1987-09-08 | 1987-09-08 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6467910A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5357059A (en) * | 1989-06-29 | 1994-10-18 | Sumitomo Electric Industries, Ltd. | Construction of electrical connection to oxide superconductor |
US5837378A (en) * | 1995-09-12 | 1998-11-17 | Micron Technology, Inc. | Method of reducing stress-induced defects in silicon |
JP2008103562A (en) * | 2006-10-19 | 2008-05-01 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device |
JP2013077833A (en) * | 2012-12-18 | 2013-04-25 | Fuji Electric Co Ltd | Semiconductor device manufacturing method |
GB2561890A (en) * | 2017-04-27 | 2018-10-31 | Flihi Tech Co Ltd | Bento box structure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244165A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Process for production of semiconductor device |
JPS57211727A (en) * | 1981-06-24 | 1982-12-25 | Toshiba Corp | Manufacture of semiconductor device |
-
1987
- 1987-09-08 JP JP22504887A patent/JPS6467910A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5244165A (en) * | 1975-10-06 | 1977-04-06 | Hitachi Ltd | Process for production of semiconductor device |
JPS57211727A (en) * | 1981-06-24 | 1982-12-25 | Toshiba Corp | Manufacture of semiconductor device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5357059A (en) * | 1989-06-29 | 1994-10-18 | Sumitomo Electric Industries, Ltd. | Construction of electrical connection to oxide superconductor |
US5837378A (en) * | 1995-09-12 | 1998-11-17 | Micron Technology, Inc. | Method of reducing stress-induced defects in silicon |
JP2008103562A (en) * | 2006-10-19 | 2008-05-01 | Fuji Electric Device Technology Co Ltd | Manufacturing method of semiconductor device |
JP2013077833A (en) * | 2012-12-18 | 2013-04-25 | Fuji Electric Co Ltd | Semiconductor device manufacturing method |
GB2561890A (en) * | 2017-04-27 | 2018-10-31 | Flihi Tech Co Ltd | Bento box structure |
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