JPS6466980A - Superconducting transistor - Google Patents
Superconducting transistorInfo
- Publication number
- JPS6466980A JPS6466980A JP62224409A JP22440987A JPS6466980A JP S6466980 A JPS6466980 A JP S6466980A JP 62224409 A JP62224409 A JP 62224409A JP 22440987 A JP22440987 A JP 22440987A JP S6466980 A JPS6466980 A JP S6466980A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- superconductive layer
- layer
- current flowing
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000002887 superconductor Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62224409A JPS6466980A (en) | 1987-09-08 | 1987-09-08 | Superconducting transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62224409A JPS6466980A (en) | 1987-09-08 | 1987-09-08 | Superconducting transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6466980A true JPS6466980A (en) | 1989-03-13 |
Family
ID=16813312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62224409A Pending JPS6466980A (en) | 1987-09-08 | 1987-09-08 | Superconducting transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6466980A (ja) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5446015A (en) * | 1990-09-19 | 1995-08-29 | Sumitomo Electric Industries, Ltd. | Superconducting device having a reduced thickness of oxide superconducting layer |
| JP2000349301A (ja) * | 1999-04-01 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2000349299A (ja) * | 1999-03-26 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
-
1987
- 1987-09-08 JP JP62224409A patent/JPS6466980A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5446015A (en) * | 1990-09-19 | 1995-08-29 | Sumitomo Electric Industries, Ltd. | Superconducting device having a reduced thickness of oxide superconducting layer |
| JP2000349299A (ja) * | 1999-03-26 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2000349301A (ja) * | 1999-04-01 | 2000-12-15 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
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