JPS646449B2 - - Google Patents
Info
- Publication number
- JPS646449B2 JPS646449B2 JP15888685A JP15888685A JPS646449B2 JP S646449 B2 JPS646449 B2 JP S646449B2 JP 15888685 A JP15888685 A JP 15888685A JP 15888685 A JP15888685 A JP 15888685A JP S646449 B2 JPS646449 B2 JP S646449B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- shielding film
- photomask
- etching
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 17
- 238000005530 etching Methods 0.000 description 12
- 238000001039 wet etching Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 238000001035 drying Methods 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 210000002381 plasma Anatomy 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60158886A JPS6218560A (ja) | 1985-07-17 | 1985-07-17 | フオトマスクブランクとフオトマスク |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60158886A JPS6218560A (ja) | 1985-07-17 | 1985-07-17 | フオトマスクブランクとフオトマスク |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6218560A JPS6218560A (ja) | 1987-01-27 |
JPS646449B2 true JPS646449B2 (ko) | 1989-02-03 |
Family
ID=15681532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60158886A Granted JPS6218560A (ja) | 1985-07-17 | 1985-07-17 | フオトマスクブランクとフオトマスク |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6218560A (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020178920A1 (ja) * | 2019-03-01 | 2020-09-10 | 株式会社ブルックマンテクノロジ | 距離画像撮像装置および距離画像撮像装置による距離画像撮像方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0823687B2 (ja) * | 1990-05-14 | 1996-03-06 | 凸版印刷株式会社 | フォトマスクブランクおよびフォトマスクならびにフォトマスクの製造方法 |
TW480367B (en) * | 2000-02-16 | 2002-03-21 | Shinetsu Chemical Co | Photomask blank, photomask and method of manufacture |
JP2002244274A (ja) * | 2001-02-13 | 2002-08-30 | Shin Etsu Chem Co Ltd | フォトマスクブランク、フォトマスク及びこれらの製造方法 |
-
1985
- 1985-07-17 JP JP60158886A patent/JPS6218560A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020178920A1 (ja) * | 2019-03-01 | 2020-09-10 | 株式会社ブルックマンテクノロジ | 距離画像撮像装置および距離画像撮像装置による距離画像撮像方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6218560A (ja) | 1987-01-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4174219A (en) | Method of making a negative exposure mask | |
EP0585872B1 (en) | Process for fabricating a phase shift photomask or phase shift photomask blank | |
JP2001305713A (ja) | フォトマスク用ブランクス及びフォトマスク | |
US4556608A (en) | Photomask blank and photomask | |
US4489146A (en) | Reverse process for making chromium masks using silicon dioxide dry etch mask | |
JPH08123010A (ja) | 位相シフトマスクおよびそれに用いるマスクブランク | |
JPS646449B2 (ko) | ||
JPS62218585A (ja) | フオトマスクの製造方法 | |
JPH0466345B2 (ko) | ||
JP2991444B2 (ja) | フォトマスクブランクおよびフォトマスク | |
JPS649617B2 (ko) | ||
JPH0463349A (ja) | フォトマスクブランクおよびフォトマスク | |
JPS6365933B2 (ko) | ||
JP2624351B2 (ja) | ホトマスクの製造方法 | |
JPS6251460B2 (ko) | ||
JPS6024933B2 (ja) | 電子線感応性無機レジスト | |
JPH0551893B2 (ko) | ||
JPS6227386B2 (ko) | ||
JPH0149937B2 (ko) | ||
JPH07281414A (ja) | 位相シフトマスクブランク及び位相シフトマスクとその製造方法 | |
JPS6217744B2 (ko) | ||
JPH05134386A (ja) | 位相シフトフオトマスク | |
JPS6295532A (ja) | パタ−ン形成方法 | |
JPS62150350A (ja) | パタ−ン形成方法 | |
JPS6237386B2 (ko) |