JPS6464250A - Method of regulating resistance value in integrated circuit - Google Patents

Method of regulating resistance value in integrated circuit

Info

Publication number
JPS6464250A
JPS6464250A JP22169587A JP22169587A JPS6464250A JP S6464250 A JPS6464250 A JP S6464250A JP 22169587 A JP22169587 A JP 22169587A JP 22169587 A JP22169587 A JP 22169587A JP S6464250 A JPS6464250 A JP S6464250A
Authority
JP
Japan
Prior art keywords
resistance value
integrated circuit
state
resistor
chalcogenide glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22169587A
Other languages
Japanese (ja)
Inventor
Kenji Takada
Tomoko Miyaura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Minolta Co Ltd
Original Assignee
Minolta Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Minolta Co Ltd filed Critical Minolta Co Ltd
Priority to JP22169587A priority Critical patent/JPS6464250A/en
Publication of JPS6464250A publication Critical patent/JPS6464250A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802—Resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To enable a resistance value to be regulated finely and reversibly without damaging an integrated circuit device or the like, by depositing a resistor of chalcogenide glass on the integrated circuit substrate and applying energy capable of changing crystallographic state of the resistor for regulating the resistance value thereof. CONSTITUTION:A resistor 2 of chalcogenide glass is deposited on an integrated circuit substrate 1. Then, energy enough to change the crystallographic state is applied to the resistor, so that the crystallographic state of the chalcogenide glass is changed and a resistance value is regulated finely. When the chalcogenide glass is in the amorphous state the resistor 2 has a high resistance value, and when it is in the crystalline state a resistance value is low. For example, in case of using laser beams, low-power laser beams are applied for a long period of time for converting the amorphous state to the crystalline state. For converting the crystalline state to the amorphous state, on the contrary, high-power laser beams are applied for a short period of time. Such energy may be smaller than that used for laser trimming and, therefore, the integrated circuit substrate 1 as well as a top protection film 7 is not damaged thereby.
JP22169587A 1987-09-03 1987-09-03 Method of regulating resistance value in integrated circuit Pending JPS6464250A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22169587A JPS6464250A (en) 1987-09-03 1987-09-03 Method of regulating resistance value in integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22169587A JPS6464250A (en) 1987-09-03 1987-09-03 Method of regulating resistance value in integrated circuit

Publications (1)

Publication Number Publication Date
JPS6464250A true JPS6464250A (en) 1989-03-10

Family

ID=16770829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22169587A Pending JPS6464250A (en) 1987-09-03 1987-09-03 Method of regulating resistance value in integrated circuit

Country Status (1)

Country Link
JP (1) JPS6464250A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4899749A (en) * 1988-11-04 1990-02-13 Elizabeth Laroco Thermal vascular dilating device and method
JP2009016845A (en) * 2007-07-04 2009-01-22 Dongbu Hitek Co Ltd Semiconductor element, and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4899749A (en) * 1988-11-04 1990-02-13 Elizabeth Laroco Thermal vascular dilating device and method
JP2009016845A (en) * 2007-07-04 2009-01-22 Dongbu Hitek Co Ltd Semiconductor element, and manufacturing method thereof

Similar Documents

Publication Publication Date Title
IE821356L (en) Laser trimming of circuit elements on semiconductive¹substrates
EP0128427A3 (en) Semiconductor memory having circuit effecting refresh on variable cycles
TW230856B (en) All digital on-the-fly time delay calibrator
EP0178757A3 (en) Solar array regulator
TW350143B (en) Method for producing semiconductor device
CA2219766A1 (en) Crystallization control method for organic compound and crystallization control solid-state component employed therefor
JPS6460832A (en) Recording element including one writing amorphous thin film optical recording layer and recording method
JPS5673697A (en) Manufacture of single crystal thin film
JPS6464250A (en) Method of regulating resistance value in integrated circuit
JPS53104156A (en) Manufacture for semiconductor device
EP0203578A3 (en) Semiconductor device having epitaxial insulating film and method of producing the same
IE810631L (en) Semiconductor device with a v-groove insulating isolation¹structure
JPS575328A (en) Growing method for semiconductor crystal
AU626884B2 (en) A heat-laminatable multilayer film
JPS6459807A (en) Material for thin-film transistor
JPS6449225A (en) Manufacture of semiconductor device
EP0366276A3 (en) Method for forming crystal
EP0166924A3 (en) Faceted magneto-optical garnet layer
JPS5294098A (en) Liquid crystal displaying device
JPS57103839A (en) Polyimide substrate for amorphous thin-film solar cell and its manufacture
JPS5687317A (en) Manufacture of semiconductor device
JPS5627981A (en) Light emitting semiconductor device
JPS5440073A (en) Film forming method
JPS52111739A (en) Optical switch array of thin film
Balcers et al. Photoinduced Amorphous<-> Crystalline Phase-Change Transition Kinetics in Thin Sb sub x Se sub--x(x= 0. 40; 0. 50; 0. 75) Films