JPS6462472A - Formation of boron nitride film - Google Patents
Formation of boron nitride filmInfo
- Publication number
- JPS6462472A JPS6462472A JP21540587A JP21540587A JPS6462472A JP S6462472 A JPS6462472 A JP S6462472A JP 21540587 A JP21540587 A JP 21540587A JP 21540587 A JP21540587 A JP 21540587A JP S6462472 A JPS6462472 A JP S6462472A
- Authority
- JP
- Japan
- Prior art keywords
- cathodes
- nitride film
- boron nitride
- treated
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To easily and stably obtain a boron nitride film, by initiating hollow cathode discharge between a reticular cathode and another cathode provided in a manner to be opposed to a material to be treated, as an anode, and then subjecting an introduced treatment gas to excitation, dissociation, and reaction. CONSTITUTION:In a decompression vessel 1, plural cathodes 4, 5 are provided in a manner to be opposed to a material 6 to be treated, as an anode. One of these cathodes is formed into a reticular cathode 5, and the cathodes 4, 5 are kept at a prescribed space. A treatment gas 10 is fed to the above space, and hollow cathode discharge of high ionization density is initiated between the cathodes, and then, thermions are emitted by heating the cathodes 4, 5 up to a temp. as high as >=1,000 deg.C. Then, the boron nitride film is formed on the surface of the material 6 to be treated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21540587A JPS6462472A (en) | 1987-08-31 | 1987-08-31 | Formation of boron nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21540587A JPS6462472A (en) | 1987-08-31 | 1987-08-31 | Formation of boron nitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6462472A true JPS6462472A (en) | 1989-03-08 |
Family
ID=16671780
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21540587A Pending JPS6462472A (en) | 1987-08-31 | 1987-08-31 | Formation of boron nitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6462472A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005344175A (en) * | 2004-06-03 | 2005-12-15 | National Institute For Materials Science | Method for producing boron nitride film in atmospheric pressure |
| WO2016038744A1 (en) * | 2014-09-12 | 2016-03-17 | 株式会社日立国際電気 | Method for manufacturing semiconductor device, substrate processing apparatus and recording medium |
-
1987
- 1987-08-31 JP JP21540587A patent/JPS6462472A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005344175A (en) * | 2004-06-03 | 2005-12-15 | National Institute For Materials Science | Method for producing boron nitride film in atmospheric pressure |
| WO2016038744A1 (en) * | 2014-09-12 | 2016-03-17 | 株式会社日立国際電気 | Method for manufacturing semiconductor device, substrate processing apparatus and recording medium |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW326617B (en) | Plasma generator and surface treatment apparatus using this plasma generator | |
| EP0180020A3 (en) | Plasma etching system | |
| EP0382065A3 (en) | Apparatus for plasma processing | |
| GR3007016T3 (en) | ||
| JPS6462472A (en) | Formation of boron nitride film | |
| JPS5669382A (en) | Surface treatment by plasma | |
| GB821475A (en) | Improvements in x-ray generator tubes | |
| JPS57131373A (en) | Plasma etching device | |
| JPS5621330A (en) | Method of dry etching | |
| JPS553169A (en) | Character display unit | |
| JPS5467377A (en) | Plasma processing apparatus | |
| JPS5641382A (en) | Microwave plasma surface processor | |
| JPS647623A (en) | Cleaning method for si surface by dry type | |
| JPS6451326A (en) | Production of superconducting material | |
| JPS5667538A (en) | Plasma oxidation method | |
| JPS6446936A (en) | Growth method of thin film | |
| JPS5515962A (en) | Ozonizer | |
| JPS5756923A (en) | Manufacture of thin film | |
| JPS56158814A (en) | Method and device for heat treatment | |
| JPS5662959A (en) | Blackening method for surface of metal | |
| JPS54100910A (en) | Method and apparatus for glow discharge processing | |
| JPS5597466A (en) | Ion nitride-production unit | |
| JPS6453551A (en) | Formation of thin film | |
| JPS6417867A (en) | Manufacture of carbon and boron nitride | |
| GB2244721A (en) | Plasma processing apparatus |