JPS6461969A - Light-emitting element - Google Patents

Light-emitting element

Info

Publication number
JPS6461969A
JPS6461969A JP21972287A JP21972287A JPS6461969A JP S6461969 A JPS6461969 A JP S6461969A JP 21972287 A JP21972287 A JP 21972287A JP 21972287 A JP21972287 A JP 21972287A JP S6461969 A JPS6461969 A JP S6461969A
Authority
JP
Japan
Prior art keywords
substrate
layer
light
sos
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21972287A
Other languages
Japanese (ja)
Inventor
Yoshifumi Bito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP21972287A priority Critical patent/JPS6461969A/en
Publication of JPS6461969A publication Critical patent/JPS6461969A/en
Pending legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE:To improve corrosion-proof performance, heat resistance, scar resistance, mechanical strength, environment resistance, and reliability, by forming light-emitting diodes both on an SOS substrate and on the substrate to compose a light-emitting element and by specifying thickness of an Si layer of the SOS substrate and radiating light from this light-emitting diode and projecting this light through the substrate. CONSTITUTION:An n-type Ga1-xAlx As layer 2, a P type Ga1-yAly As layer 3, and a P<+> type GaAs layer 4 are laminated serially on an SOS substrate 1. The SOS substrate 1 is composed by forming a thin film of an Si layer 1b on an alumina single-crystalline substrate 1a. The alumina singlecrystalline substrate 1a is a transmissive substrate with very high transparency. On the other hand the Si layer 1b is set 2mum or less in its thickness so that it has also high transparency. Luminous energy generated in the respective layers 2-4 is made to pass through the SOS substrate 1. Further, the alumina single- crystalline substrate 1a is excellent in corrosion-proof performance, oxidation- proof performance, heat impact resistance, and the like. Because of its large hardness, the substrate is excellent in scar resistance, too.
JP21972287A 1987-09-02 1987-09-02 Light-emitting element Pending JPS6461969A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21972287A JPS6461969A (en) 1987-09-02 1987-09-02 Light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21972287A JPS6461969A (en) 1987-09-02 1987-09-02 Light-emitting element

Publications (1)

Publication Number Publication Date
JPS6461969A true JPS6461969A (en) 1989-03-08

Family

ID=16739944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21972287A Pending JPS6461969A (en) 1987-09-02 1987-09-02 Light-emitting element

Country Status (1)

Country Link
JP (1) JPS6461969A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147986A (en) * 1975-06-13 1976-12-18 Semiconductor Res Found Semiconductor light emission device
JPS55151377A (en) * 1979-05-16 1980-11-25 Fujitsu Ltd Photo semiconductor device
JPS6074483A (en) * 1983-09-30 1985-04-26 Toshiba Corp Light-emitting diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147986A (en) * 1975-06-13 1976-12-18 Semiconductor Res Found Semiconductor light emission device
JPS55151377A (en) * 1979-05-16 1980-11-25 Fujitsu Ltd Photo semiconductor device
JPS6074483A (en) * 1983-09-30 1985-04-26 Toshiba Corp Light-emitting diode

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