JPS6461969A - Light-emitting element - Google Patents
Light-emitting elementInfo
- Publication number
- JPS6461969A JPS6461969A JP21972287A JP21972287A JPS6461969A JP S6461969 A JPS6461969 A JP S6461969A JP 21972287 A JP21972287 A JP 21972287A JP 21972287 A JP21972287 A JP 21972287A JP S6461969 A JPS6461969 A JP S6461969A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- layer
- light
- sos
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE:To improve corrosion-proof performance, heat resistance, scar resistance, mechanical strength, environment resistance, and reliability, by forming light-emitting diodes both on an SOS substrate and on the substrate to compose a light-emitting element and by specifying thickness of an Si layer of the SOS substrate and radiating light from this light-emitting diode and projecting this light through the substrate. CONSTITUTION:An n-type Ga1-xAlx As layer 2, a P type Ga1-yAly As layer 3, and a P<+> type GaAs layer 4 are laminated serially on an SOS substrate 1. The SOS substrate 1 is composed by forming a thin film of an Si layer 1b on an alumina single-crystalline substrate 1a. The alumina singlecrystalline substrate 1a is a transmissive substrate with very high transparency. On the other hand the Si layer 1b is set 2mum or less in its thickness so that it has also high transparency. Luminous energy generated in the respective layers 2-4 is made to pass through the SOS substrate 1. Further, the alumina single- crystalline substrate 1a is excellent in corrosion-proof performance, oxidation- proof performance, heat impact resistance, and the like. Because of its large hardness, the substrate is excellent in scar resistance, too.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21972287A JPS6461969A (en) | 1987-09-02 | 1987-09-02 | Light-emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP21972287A JPS6461969A (en) | 1987-09-02 | 1987-09-02 | Light-emitting element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6461969A true JPS6461969A (en) | 1989-03-08 |
Family
ID=16739944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP21972287A Pending JPS6461969A (en) | 1987-09-02 | 1987-09-02 | Light-emitting element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6461969A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51147986A (en) * | 1975-06-13 | 1976-12-18 | Semiconductor Res Found | Semiconductor light emission device |
JPS55151377A (en) * | 1979-05-16 | 1980-11-25 | Fujitsu Ltd | Photo semiconductor device |
JPS6074483A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Light-emitting diode |
-
1987
- 1987-09-02 JP JP21972287A patent/JPS6461969A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51147986A (en) * | 1975-06-13 | 1976-12-18 | Semiconductor Res Found | Semiconductor light emission device |
JPS55151377A (en) * | 1979-05-16 | 1980-11-25 | Fujitsu Ltd | Photo semiconductor device |
JPS6074483A (en) * | 1983-09-30 | 1985-04-26 | Toshiba Corp | Light-emitting diode |
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