JPS6461385A - Liquid epitaxial growth process - Google Patents

Liquid epitaxial growth process

Info

Publication number
JPS6461385A
JPS6461385A JP21805387A JP21805387A JPS6461385A JP S6461385 A JPS6461385 A JP S6461385A JP 21805387 A JP21805387 A JP 21805387A JP 21805387 A JP21805387 A JP 21805387A JP S6461385 A JPS6461385 A JP S6461385A
Authority
JP
Japan
Prior art keywords
solution
growth
epitaxial growth
reservoir
plural
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21805387A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519516B2 (cs
Inventor
Tsunehiro Unno
Mineo Wajima
Hisafumi Tate
Taiichiro Konno
Hiroshi Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Cable Ltd
Original Assignee
Hitachi Cable Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Cable Ltd filed Critical Hitachi Cable Ltd
Priority to JP21805387A priority Critical patent/JPS6461385A/ja
Publication of JPS6461385A publication Critical patent/JPS6461385A/ja
Publication of JPH0519516B2 publication Critical patent/JPH0519516B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP21805387A 1987-09-02 1987-09-02 Liquid epitaxial growth process Granted JPS6461385A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21805387A JPS6461385A (en) 1987-09-02 1987-09-02 Liquid epitaxial growth process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21805387A JPS6461385A (en) 1987-09-02 1987-09-02 Liquid epitaxial growth process

Publications (2)

Publication Number Publication Date
JPS6461385A true JPS6461385A (en) 1989-03-08
JPH0519516B2 JPH0519516B2 (cs) 1993-03-16

Family

ID=16713915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21805387A Granted JPS6461385A (en) 1987-09-02 1987-09-02 Liquid epitaxial growth process

Country Status (1)

Country Link
JP (1) JPS6461385A (cs)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922126A (en) * 1996-05-31 1999-07-13 Kabushiki Kaisha Toshiba Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922126A (en) * 1996-05-31 1999-07-13 Kabushiki Kaisha Toshiba Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder
EP0810306A3 (en) * 1996-05-31 2000-03-01 Kabushiki Kaisha Toshiba Semiconductor liquid phase epitaxial growth method and apparatus, and its wafer holder

Also Published As

Publication number Publication date
JPH0519516B2 (cs) 1993-03-16

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