JPS6472988A - Liquid phase growing method - Google Patents
Liquid phase growing methodInfo
- Publication number
- JPS6472988A JPS6472988A JP62228272A JP22827287A JPS6472988A JP S6472988 A JPS6472988 A JP S6472988A JP 62228272 A JP62228272 A JP 62228272A JP 22827287 A JP22827287 A JP 22827287A JP S6472988 A JPS6472988 A JP S6472988A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- soln
- held
- substrates
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To obtain single crystal which is capable of mass production and excellent in uniformity of film thickness and deposition efficiency by growing single crystal of a semiconductor on one sheet of substrate which is rotated in the face of the substrate in a soln. or on a plurality of sheets of substrates which are similarly rotated and parallel held. CONSTITUTION:After a required soln. 3 is introduced into a graphite vessel 31, one sheet of substrate 5 held with a substrate holder 34a or a plurality of sheets of substrates 5 which are held with a substrate holder 34b and parallel held are immersed in the soln. 3. While rotating the substrate holders 34a, 34b by keeping a central supporting rod as an axis so that the substrate 5 is rotated in the face of the substrate 5, the soln. 3 is slowly cooled and single crystal of a semiconductor is grown on the substrates 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62228272A JPS6472988A (en) | 1987-09-14 | 1987-09-14 | Liquid phase growing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62228272A JPS6472988A (en) | 1987-09-14 | 1987-09-14 | Liquid phase growing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6472988A true JPS6472988A (en) | 1989-03-17 |
Family
ID=16873875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62228272A Pending JPS6472988A (en) | 1987-09-14 | 1987-09-14 | Liquid phase growing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6472988A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6551908B2 (en) | 2000-10-02 | 2003-04-22 | Canon Kabushiki Kaisha | Method for producing semiconductor thin films on moving substrates |
-
1987
- 1987-09-14 JP JP62228272A patent/JPS6472988A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6551908B2 (en) | 2000-10-02 | 2003-04-22 | Canon Kabushiki Kaisha | Method for producing semiconductor thin films on moving substrates |
| US6951584B2 (en) | 2000-10-02 | 2005-10-04 | Canon Kabushiki Kaisha | Apparatus for producing semiconductor thin films on moving substrates |
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