JPS6459872A - Manufacture of semiconductor pressure sensor - Google Patents

Manufacture of semiconductor pressure sensor

Info

Publication number
JPS6459872A
JPS6459872A JP21699687A JP21699687A JPS6459872A JP S6459872 A JPS6459872 A JP S6459872A JP 21699687 A JP21699687 A JP 21699687A JP 21699687 A JP21699687 A JP 21699687A JP S6459872 A JPS6459872 A JP S6459872A
Authority
JP
Japan
Prior art keywords
semiconductor chip
grinding stone
center
peripheral
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21699687A
Other languages
Japanese (ja)
Inventor
Katsuya Saito
Nobuaki Kono
Toshio Aga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP21699687A priority Critical patent/JPS6459872A/en
Publication of JPS6459872A publication Critical patent/JPS6459872A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE:To make the thickness of the deforming part of a diaphragm uniform from a center part to a peripheral part to obtain a high sensitive semiconductor pressure sensor, by improving a configuration of a grinding stone of machining to a semiconductor chip and using this together with etching. CONSTITUTION:A cylindrical grinding stone 25 is pressed to one surface of a semiconductor chip 26 by revolving to form a recessed part 27 by ultrasonic grinding processing. The bottom configuration of the grinding stone 25 is formed in a conical surface which becomes deeper from its peripheral toward its central axis. Therefore, if a semiconductor chip 26 is processed by such grinding stone 25, a deforming part 28 which is thick in its center and thin in its peripheral section is formed. The semiconductor chip 26 having such recessed part is dipped in etchant and isotropic etching is performed by applying a current through an electrode 29 to form a diaphragm 31 having a deforming part 30 whose thickness is uniform ranging from the center to the peripheral section.
JP21699687A 1987-08-31 1987-08-31 Manufacture of semiconductor pressure sensor Pending JPS6459872A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21699687A JPS6459872A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21699687A JPS6459872A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS6459872A true JPS6459872A (en) 1989-03-07

Family

ID=16697180

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21699687A Pending JPS6459872A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS6459872A (en)

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