JPS6457726A - Manufacture of tape carrier type semiconductor device - Google Patents

Manufacture of tape carrier type semiconductor device

Info

Publication number
JPS6457726A
JPS6457726A JP21559387A JP21559387A JPS6457726A JP S6457726 A JPS6457726 A JP S6457726A JP 21559387 A JP21559387 A JP 21559387A JP 21559387 A JP21559387 A JP 21559387A JP S6457726 A JPS6457726 A JP S6457726A
Authority
JP
Japan
Prior art keywords
tie
bar
semiconductor chip
inner leads
tape carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21559387A
Other languages
Japanese (ja)
Inventor
Kazuhiro Iino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21559387A priority Critical patent/JPS6457726A/en
Publication of JPS6457726A publication Critical patent/JPS6457726A/en
Pending legal-status Critical Current

Links

Landscapes

  • Wire Bonding (AREA)

Abstract

PURPOSE:To prevent the positional displacement of an inner lead by gang- bonding a semiconductor chip with a tape carrier with the inner lead connected by a tie-bar, sealing the semiconductor chip and lastly cutting the tie-bar through laser beam machining. CONSTITUTION:Inner leads 1 and a tie-bar 2 are formed by pattern-etching rolled copper, and it is preferable that a distance L from a finger tip to the tie-bar is brought to 1.5mm. The inner leads 1 and a semiconductor chip 4, on electrodes of which bumps are shaped, are positioned, and gang-bonded. A pellet, an epoxy resin of which is half-cured, is placed onto the inner leads 1 so that the semiconductor chip 4 is hidden, the resin is solidified, and the pellet is sealed. The tie-bar 2 is exposed to the outside of a sealing body 5, and the inner leads 1 are cut by laser beams 6.
JP21559387A 1987-08-28 1987-08-28 Manufacture of tape carrier type semiconductor device Pending JPS6457726A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21559387A JPS6457726A (en) 1987-08-28 1987-08-28 Manufacture of tape carrier type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21559387A JPS6457726A (en) 1987-08-28 1987-08-28 Manufacture of tape carrier type semiconductor device

Publications (1)

Publication Number Publication Date
JPS6457726A true JPS6457726A (en) 1989-03-06

Family

ID=16674998

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21559387A Pending JPS6457726A (en) 1987-08-28 1987-08-28 Manufacture of tape carrier type semiconductor device

Country Status (1)

Country Link
JP (1) JPS6457726A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10063041A1 (en) * 2000-12-18 2002-07-04 Infineon Technologies Ag Method of making an integrated circuit
JP2010141163A (en) * 2008-12-12 2010-06-24 Fuji Electric Systems Co Ltd Semiconductor device and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10063041A1 (en) * 2000-12-18 2002-07-04 Infineon Technologies Ag Method of making an integrated circuit
US6649450B2 (en) 2000-12-18 2003-11-18 Infineon Technologies Ag Method of producing an integrated circuit and an integrated circuit
DE10063041B4 (en) * 2000-12-18 2012-12-06 Infineon Technologies Ag A method of manufacturing an integrated leadless package circuit and integrated leadless package circuit
JP2010141163A (en) * 2008-12-12 2010-06-24 Fuji Electric Systems Co Ltd Semiconductor device and method of manufacturing the same

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