JPS6457485A - Bicmos read-out circuit - Google Patents

Bicmos read-out circuit

Info

Publication number
JPS6457485A
JPS6457485A JP62213011A JP21301187A JPS6457485A JP S6457485 A JPS6457485 A JP S6457485A JP 62213011 A JP62213011 A JP 62213011A JP 21301187 A JP21301187 A JP 21301187A JP S6457485 A JPS6457485 A JP S6457485A
Authority
JP
Japan
Prior art keywords
common data
data line
memory cell
amplifying circuit
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62213011A
Other languages
English (en)
Other versions
JP2719783B2 (ja
Inventor
Takakuni Douseki
Yasuo Omori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP62213011A priority Critical patent/JP2719783B2/ja
Publication of JPS6457485A publication Critical patent/JPS6457485A/ja
Application granted granted Critical
Publication of JP2719783B2 publication Critical patent/JP2719783B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Static Random-Access Memory (AREA)
JP62213011A 1987-08-28 1987-08-28 BiCMOS読出し回路 Expired - Lifetime JP2719783B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62213011A JP2719783B2 (ja) 1987-08-28 1987-08-28 BiCMOS読出し回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62213011A JP2719783B2 (ja) 1987-08-28 1987-08-28 BiCMOS読出し回路

Publications (2)

Publication Number Publication Date
JPS6457485A true JPS6457485A (en) 1989-03-03
JP2719783B2 JP2719783B2 (ja) 1998-02-25

Family

ID=16632018

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62213011A Expired - Lifetime JP2719783B2 (ja) 1987-08-28 1987-08-28 BiCMOS読出し回路

Country Status (1)

Country Link
JP (1) JP2719783B2 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0366095A (ja) * 1989-08-04 1991-03-20 Fujitsu Ltd 半導体集積回路装置
JPH04285794A (ja) * 1991-03-14 1992-10-09 Toshiba Corp 半導体記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218035U (ja) * 1975-07-26 1977-02-08
JPS61278098A (ja) * 1985-06-03 1986-12-08 Nippon Telegr & Teleph Corp <Ntt> メモリ回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5218035U (ja) * 1975-07-26 1977-02-08
JPS61278098A (ja) * 1985-06-03 1986-12-08 Nippon Telegr & Teleph Corp <Ntt> メモリ回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0366095A (ja) * 1989-08-04 1991-03-20 Fujitsu Ltd 半導体集積回路装置
JPH04285794A (ja) * 1991-03-14 1992-10-09 Toshiba Corp 半導体記憶装置

Also Published As

Publication number Publication date
JP2719783B2 (ja) 1998-02-25

Similar Documents

Publication Publication Date Title
KR890017706A (ko) 다이나믹형 반도체 기억장치
JPS57127989A (en) Mos static type ram
EP1158532A3 (en) Semiconductor memory device
KR900019253A (ko) Bicmos sram내의 고성능 바이폴라 차동 감지 증폭기
EP0301588A3 (en) Semiconductor memory device
KR930001226A (ko) 고속 센싱 동작을 수행하는 센스 앰프
EP0370432A3 (en) High speed differential sense amplifier for use with single transistor memory cells
KR950006852A (ko) 고속동작을 위한 입출력라인구동방식을 가지는 반도체메모리장치
KR860003604A (ko) 반도체 메모리 장치
EP0088421B1 (en) Semiconductor memory device having tunnel diodes
US4385370A (en) Decoder circuit
KR860006790A (ko) 반도체 기억장치
KR910010530A (ko) 램 테스트시 고속 기록회로
TW326535B (en) Semiconductor memory device and read-out circuit
KR900010776A (ko) 메모리를 내장한 집적 회로
JPS6331879B2 (ja)
JPS6457485A (en) Bicmos read-out circuit
JPS5693178A (en) Semiconductor memory device
EP0316877A3 (en) Semiconductor memory device with improved output circuit
MY103940A (en) Semiconductor memory capable of improving data rewrite speed
KR100227300B1 (ko) 반도체 기억 장치
JPS6452296A (en) Memory
KR930005199A (ko) 반도체 기억장치
JPS5641593A (en) Semiconductor memory unit
KR950001773A (ko) 반도체 메모리 장치

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20071121

Year of fee payment: 10