JPS6455827A - Device for removal of resist film - Google Patents
Device for removal of resist filmInfo
- Publication number
- JPS6455827A JPS6455827A JP21133387A JP21133387A JPS6455827A JP S6455827 A JPS6455827 A JP S6455827A JP 21133387 A JP21133387 A JP 21133387A JP 21133387 A JP21133387 A JP 21133387A JP S6455827 A JPS6455827 A JP S6455827A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- chamber
- shaft
- arm
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
PURPOSE:To shorten a conveying time and to reduce the size of a device by providing a conveying arm having a placing unit of a substrate movable in a direction perpendicular to an shaft on the rotatable and elevationally movable shaft, and providing a treating chamber with a plurality of ozones around the shaft, and at least one cassette for containing a plurality of substrates. CONSTITUTION:The shaft of a conveyor is rotated so that a conveying arm is directed toward the central direction of a cassette 9 on a base, the arm is elevationally moved to the position of a substrate to be removed, and the substrate is transferred to a substrate holder. The arm is rotated and elevationally moved to move the substrate to a substrate placing unit of a treating chamber for raising a chamber 18. When the substrate is placed on the unit, a chamber 17 drops, it starts rotating the unit, heating the substrate, sucking to remove gas in the chamber, and preheating and pretreating to remove organic solvent and low polymer substance from resist. A small amount of zone may be supplied at the time of pretreating, or it may be preheated while merely supplying nitrogen gas instead of sucking to remove the gas in the chamber.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211333A JP2588899B2 (en) | 1987-08-27 | 1987-08-27 | Resist film removal equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62211333A JP2588899B2 (en) | 1987-08-27 | 1987-08-27 | Resist film removal equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6455827A true JPS6455827A (en) | 1989-03-02 |
JP2588899B2 JP2588899B2 (en) | 1997-03-12 |
Family
ID=16604216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62211333A Expired - Lifetime JP2588899B2 (en) | 1987-08-27 | 1987-08-27 | Resist film removal equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2588899B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0244722A (en) * | 1988-08-05 | 1990-02-14 | Teru Kyushu Kk | Ashing system |
US5830279A (en) * | 1995-09-29 | 1998-11-03 | Harris Corporation | Device and method for improving corrosion resistance and etch tool integrity in dry metal etching |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60175411A (en) * | 1984-02-22 | 1985-09-09 | Hitachi Ltd | Manufacture of thin semiconductor film and apparatus thereof |
JPS61150321A (en) * | 1984-12-25 | 1986-07-09 | Toshiba Mach Co Ltd | Method of treatments such as vapor growth or the like |
JPS61196537A (en) * | 1985-02-27 | 1986-08-30 | Hitachi Ltd | Vacuum processor |
JPS6218032A (en) * | 1985-07-17 | 1987-01-27 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6332931A (en) * | 1986-04-18 | 1988-02-12 | ジエネラル・シグナル・コ−ポレ−シヨン | Plasma etching system |
-
1987
- 1987-08-27 JP JP62211333A patent/JP2588899B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60175411A (en) * | 1984-02-22 | 1985-09-09 | Hitachi Ltd | Manufacture of thin semiconductor film and apparatus thereof |
JPS61150321A (en) * | 1984-12-25 | 1986-07-09 | Toshiba Mach Co Ltd | Method of treatments such as vapor growth or the like |
JPS61196537A (en) * | 1985-02-27 | 1986-08-30 | Hitachi Ltd | Vacuum processor |
JPS6218032A (en) * | 1985-07-17 | 1987-01-27 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6332931A (en) * | 1986-04-18 | 1988-02-12 | ジエネラル・シグナル・コ−ポレ−シヨン | Plasma etching system |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0244722A (en) * | 1988-08-05 | 1990-02-14 | Teru Kyushu Kk | Ashing system |
US5830279A (en) * | 1995-09-29 | 1998-11-03 | Harris Corporation | Device and method for improving corrosion resistance and etch tool integrity in dry metal etching |
Also Published As
Publication number | Publication date |
---|---|
JP2588899B2 (en) | 1997-03-12 |
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Legal Events
Date | Code | Title | Description |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
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EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071205 Year of fee payment: 11 |