JPS6453450A - Heterojunction bipolar transistor - Google Patents

Heterojunction bipolar transistor

Info

Publication number
JPS6453450A
JPS6453450A JP20925487A JP20925487A JPS6453450A JP S6453450 A JPS6453450 A JP S6453450A JP 20925487 A JP20925487 A JP 20925487A JP 20925487 A JP20925487 A JP 20925487A JP S6453450 A JPS6453450 A JP S6453450A
Authority
JP
Japan
Prior art keywords
base layer
silicon carbide
base
current
bipolar transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20925487A
Other languages
Japanese (ja)
Inventor
Yuji Furumura
Fumitake Mieno
Takaaki Suzuki
Takashi Eshita
Masahiko Toki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20925487A priority Critical patent/JPS6453450A/en
Publication of JPS6453450A publication Critical patent/JPS6453450A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To prevent the interaction of oxygen or nitrogen contained in silicon carbide with impurity in a base layer by a method wherein a high resistive region is interposed between silicon carbide and the base layer. CONSTITUTION:A silicon carbide 11 is not formed directly on a base layer 13 but isolated from the base layer 13 through the intermediary of a high resistive region 14. Thereby, oxygen or nitrogen contained in the silicon carbide 11 is made to be prevented from interacting with impurity doped in the base layer 13. Therefore, the impurity doped in the base layer 13 can be substatially increased in concentration, a re-coupling current at the interface between a base and an emitter is restrained from in creasing as well, a base current and an emitter current can be made to increase, and a base resistance can be made to be low, and thus a high speed operation can be realized.
JP20925487A 1987-08-25 1987-08-25 Heterojunction bipolar transistor Pending JPS6453450A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20925487A JPS6453450A (en) 1987-08-25 1987-08-25 Heterojunction bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20925487A JPS6453450A (en) 1987-08-25 1987-08-25 Heterojunction bipolar transistor

Publications (1)

Publication Number Publication Date
JPS6453450A true JPS6453450A (en) 1989-03-01

Family

ID=16569910

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20925487A Pending JPS6453450A (en) 1987-08-25 1987-08-25 Heterojunction bipolar transistor

Country Status (1)

Country Link
JP (1) JPS6453450A (en)

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